Abstract: An evaluation element includes a plurality of first wirings extending in a first direction, connection conductors, each connection conductor electrically contact a single one of the first wirings, and a plurality of second wirings extending in a second direction that crosses the first direction and electrically contacts the connection conductors contacting the first wirings. The connection conductors are provided in at least two separated positions on the same first wiring. The plurality of second wiring are positioned such that a series electrical connection is established, through the connection conductors and the first wirings, between one second wiring and another second wiring.

Abstract: A nonvolatile semiconductor storage device includes a substrate; an isolation film extending in a first direction and dividing the substrate into element regions; a cell string including memory cells in the element regions; a cell unit including the cell string and a select transistor on first directional ends of the cell string; diffusion layers formed in a portion of the element region first directionally beside the select gate electrode, the diffusion layers being adjacent to one another in a second direction intersecting with the first direction; and contacts extending through an interlayer insulating film and contacting the diffusion layers. An upper surface of the isolation film located between the diffusion layers is lower than an upper surface of the substrate. A laminate of silicon oxide film and a silicon nitride film are located above the upper surface of the isolation film and below the upper surface of the substrate.

Abstract: According to one embodiment, a memory device includes: a first signal line; a second signal line; a transistor; a memory region; and a conductive region. The transistor controls a conduction of each of a current in a first direction flowing between the first line and the second line and a current in a second direction opposite to the first direction. The memory region has a first magnetic tunnel junction element which is connected between the first line and one end of the transistor, a magnetization direction of which becomes parallel when a current not less than a first parallel threshold value flows in the first direction, and the magnetization direction of which becomes antiparallel when a current not less than a first antiparallel threshold value flows in the second direction. The conductive region is connected between the second line and the other end of the transistor.

Abstract: A nonvolatile semiconductor storage device includes a substrate; an isolation film extending in a first direction and dividing the substrate into element regions; a cell string including memory cells in the element regions; a cell unit including the cell string and a select transistor on first directional ends of the cell string; diffusion layers formed in a portion of the element region first directionally beside the select gate electrode, the diffusion layers being adjacent to one another in a second direction intersecting with the first direction; and contacts extending through an interlayer insulating film and contacting the diffusion layers. An upper surface of the isolation film located between the diffusion layers is lower than an upper surface of the substrate. A laminate of silicon oxide film and a silicon nitride film are located above the upper surface of the isolation film and below the upper surface of the substrate.

Abstract: According to one embodiment, a memory device includes: a first signal line; a second signal line; a transistor; a first memory region; and a second memory region. The transistor controls a conduction of each of a current flowing between the first and the second signal lines and an opposite current. The first memory region has a first magnetic tunnel junction element. A magnetization direction thereof becomes parallel when a current flows in one direction, and the magnetization direction becomes antiparallel when a current in another direction. The second memory region has a second magnetic tunnel junction element. A magnetization direction thereof becomes parallel when a current flows in one direction, and becomes antiparallel when a current flows in another first direction.

Abstract: According to one embodiment, a memory device includes: a first signal line; a second signal line; a transistor; a memory region; and a conductive region. The transistor controls a conduction of each of a current in a first direction flowing between the first line and the second line and a current in a second direction opposite to the first direction. The memory region has a first magnetic tunnel junction element which is connected between the first line and one end of the transistor, a magnetization direction of which becomes parallel when a current not less than a first parallel threshold value flows in the first direction, and the magnetization direction of which becomes antiparallel when a current not less than a first antiparallel threshold value flows in the second direction. The conductive region is connected between the second line and the other end of the transistor.

Abstract: According to one embodiment, a memory device includes: a first signal line; a second signal line; a transistor; a first memory region; and a second memory region. The transistor controls a conduction of each of a current flowing between the first and the second signal lines and an opposite current. The first memory region has a first magnetic tunnel junction element. A magnetization direction thereof becomes parallel when a current flows in one direction, and the magnetization direction becomes antiparallel when a current in another direction. The second memory region has a second magnetic tunnel junction element. A magnetization direction thereof becomes parallel when a current flows in one direction, and becomes antiparallel when a current flows in another first direction.

Abstract: A semiconductor memory device includes a semiconductor substrate, and plural switching transistors provided on the semiconductor substrate. A contact plug is embedded between the adjacent two switching transistors described above, is insulated from gates of the adjacent two switching transistors, and is electrically connected to diffusion layers of the adjacent two switching transistors. An upper connector is formed on the contact plug, and an upper surface is at a position higher than upper surfaces of the switching transistors. A memory element is provided on the upper surface of the upper connector, and stores data. A wiring is provided on the memory element.

Abstract: A pneumatic tire comprises a carcass 1 comprised of one or more carcass plies toroidally extending between a pair of bead portions, a tread rubber 2 arranged at an outer peripheral side of a crown portion of the carcass 1, a belt 5 arranged between the tread rubber 2 and the carcass 1 and comprised of two belt layers 3, 4, cords 10 of which layers being crossed with each other and extending in an inclination angle of 45-80° with respect to a circumferential direction of the tire, and one or more circumferential strengthening layers 6, 7 arranged at an inner peripheral side of the belt 5 and containing wavy or zigzag cords 9 extended substantially in the circumferential direction of the tire, in which a width L of a belt layer 7 located at the inner peripheral side is made larger than a width M of the circumferential strengthening layer and a width N of a belt layer located at the outer peripheral side is made smaller than the width M of the circumferential strengthening layer.

Abstract: A pneumatic tire comprises a carcass 1 comprised of one or more carcass plies toroidally extending between a pair of bead portions, a tread rubber 2 arranged at an outer peripheral side of a crown portion of the carcass 1, a belt 5 arranged between the tread rubber 2 and the carcass 1 and comprised of two belt layers 3, 4, cords 10 of which layers being crossed with each other and extending in an inclination angle of 45-80° with respect to a circumferential direction of the tire, and one or more circumferential strengthening layers 6, 7 arranged at an inner peripheral side of the belt 5 and containing wavy or zigzag cords 9 extended substantially in the circumferential direction of the tire, in which a width L of a belt layer 7 located at the inner peripheral side is made larger than a width M of the circumferential strengthening layer and a width N of a belt layer located at the outer peripheral side is made smaller than the width M of the circumferential strengthening layer.

Abstract: A pneumatic tire comprises a tread portion, a pair of sidewall portions and a pair of bead portions and a radial carcass of at least one rubberized carcass ply containing steel cord therein and wound around the bead core to form a part or a whole of a wound portion of the carcass ply as a wind contact part along the peripheral face of the bead core, wherein at least one steel cord reinforcing layer is arranged in the bead portion.

Abstract: A steel cord for the reinforcement of rubber articles has a two-layer construction in which a core consists of two steel filaments and a sheath arranged around the core consists of nine steel filaments.

Abstract: A two-layered twisted steel cord for reinforcing rubber articles, comprising a core including two filaments and a sheath including six or seven filaments wound around the core, in which an average twist pitch of the core is set to be at least 30 mm, and when six filaments are used for the sheath, a ratio of diameter ds of each filament of the sheath to diameter dc of each filament of the core, ?(ds/dc).times.100!, is set in a range of 58.0 %<ds/dc<161.5%. When seven filaments are used for the sheath, the ratio of diameter ds to diameter dc is set in a range of 47.3%<ds/dc<121.1%. The two-layered twisted steel cords are used for reinforcing rubber articles, such as a pneumatic radial tire.

Abstract: A steel cord for the reinforcement of rubber articles has a three-layer twisting structure comprising a core of 2 steel filaments, a middle sheath layer of 6 steel filaments and an outer sheath layer of 11 steel filaments, in which a ratio of filament diameter ds in the middle and outer sheath layers to filament diameter dc in the core (ds/dc) is within a range of 1.15-1.5 and a twisting pitch of the core is not less than 20 mm, and is used as a reinforcing member in a heavy duty pneumatic radial tire, conveyor belt and the like.