Patents by Inventor Takayasu Kanesada
Takayasu Kanesada has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 11721711Abstract: A disclosed photoelectric conversion device includes: a semiconductor layer in which a photoelectric converter is provided; a substrate arranged on one face side of the semiconductor layer; and an interconnection structure arranged between the semiconductor layer and the substrate. The interconnection structure includes a first insulating film made of a first insulating material and a second insulating film provided on the semiconductor layer side of the first insulating film and made of a second insulating material, the first insulating material permeates more hydrogen than the second insulating material, an insulating member made of the first insulating material is located between the first insulating film and the semiconductor layer, and the first insulating film and the insulating member are connected to each other via an opening provided in the second insulating film.Type: GrantFiled: May 20, 2020Date of Patent: August 8, 2023Assignee: CANON KABUSHIKI KAISHAInventors: Takayasu Kanesada, Koji Hara
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Patent number: 11488998Abstract: A semiconductor apparatus configured to decrease occurrence of exfoliation between a conductor layer and an insulator layer is provided. A first region containing silicon and copper is disposed between a first conductor portion and a first insulator portion. A second region containing silicon and copper is disposed between a second conductor portion and a second insulator portion. The first region has a maximum nitrogen concentration higher than that of the second region.Type: GrantFiled: April 20, 2020Date of Patent: November 1, 2022Assignee: CANON KABUSHIKI KAISHAInventors: Akihiro Kawano, Yukinobu Suzuki, Takayasu Kanesada
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Publication number: 20200381469Abstract: A disclosed photoelectric conversion device includes: a semiconductor layer in which a photoelectric converter is provided; a substrate arranged on one face side of the semiconductor layer; and an interconnection structure arranged between the semiconductor layer and the substrate. The interconnection structure includes a first insulating film made of a first insulating material and a second insulating film provided on the semiconductor layer side of the first insulating film and made of a second insulating material, the first insulating material permeates more hydrogen than the second insulating material, an insulating member made of the first insulating material is located between the first insulating film and the semiconductor layer, and the first insulating film and the insulating member are connected to each other via an opening provided in the second insulating film.Type: ApplicationFiled: May 20, 2020Publication date: December 3, 2020Inventors: Takayasu Kanesada, Koji Hara
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Publication number: 20200343293Abstract: A semiconductor apparatus configured to decrease occurrence of exfoliation between a conductor layer and an insulator layer is provided. A first region containing silicon and copper is disposed between a first conductor portion and a first insulator portion. A second region containing silicon and copper is disposed between a second conductor portion and a second insulator portion. The first region has a maximum nitrogen concentration higher than that of the second region.Type: ApplicationFiled: April 20, 2020Publication date: October 29, 2020Inventors: Akihiro Kawano, Yukinobu Suzuki, Takayasu Kanesada
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Patent number: 9929303Abstract: A method of manufacturing a solid-state image sensor is provided. A first insulating member and an electrically conductive member is formed above a semiconductor substrate. A connecting portion of an upper surface of the electrically conductive member is covered with part of the first insulating member. First openings corresponding to the photoelectric conversion units are formed in the first insulating member. A second insulating member covering the first insulating member is then formed. The second insulating member is partially removed to expose the part of the first insulating member covering the connecting portion. A third insulating member that covers the first and second insulating members is then formed. The third insulating member is partially removed to expose the second insulating member. A second opening to expose the connecting portion is then formed to form a plug.Type: GrantFiled: May 22, 2017Date of Patent: March 27, 2018Assignee: CANON KABUSHIKI KAISHAInventor: Takayasu Kanesada
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Patent number: 9871072Abstract: A photoelectric conversion device has an insulator film disposed on a silicon layer having a photoelectric conversion region, the insulator film having a portion overlapped with the photoelectric conversion region, a silicon oxide film disposed on the insulator film, the silicon oxide film having a portion overlapped with the photoelectric conversion region, an electroconductive member disposed between the insulator film and the silicon oxide film, and a silicon oxide layer disposed between the electroconductive member and the silicon oxide film, in which the portion overlapped with the photoelectric conversion region of the silicon oxide film is in contact with the portion overlapped with the photoelectric conversion region of the insulator film and the hydrogen concentration of the silicon oxide film is greater than the hydrogen concentration of the silicon oxide layer.Type: GrantFiled: May 26, 2016Date of Patent: January 16, 2018Assignee: Canon Kabushiki KaishaInventors: Akihiro Kawano, Yukinobu Suzuki, Nobutaka Ukigaya, Takayasu Kanesada, Takeshi Aoki, Hiroshi Takakusagi
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Publication number: 20170358622Abstract: A method of manufacturing a solid-state image sensor is provided. A first insulating member and an electrically conductive member is formed above a semiconductor substrate. A connecting portion of an upper surface of the electrically conductive member is covered with part of the first insulating member. First openings corresponding to the photoelectric conversion units are formed in the first insulating member. A second insulating member covering the first insulating member is then formed. The second insulating member is partially removed to expose the part of the first insulating member covering the connecting portion. A third insulating member that covers the first and second insulating members is then formed. The third insulating member is partially removed to expose the second insulating member. A second opening to expose the connecting portion is then formed to form a plug.Type: ApplicationFiled: May 22, 2017Publication date: December 14, 2017Inventor: Takayasu Kanesada
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Patent number: 9608031Abstract: A method for manufacturing a solid-state image sensor, the method comprising preparing a substrate including a photoelectric conversion portion, forming, on the substrate, a structure which includes a first member made of a material containing silicon oxide and a second member arranged on the first member and made of a material containing silicon carbide, forming an opening in a position above the photoelectric conversion portion in the structure by removing a part of the first and the second members, and forming a transparent member in the opening, wherein the second member is formed at a first temperature and the transparent member is formed at a second temperature lower than the first temperature.Type: GrantFiled: February 29, 2016Date of Patent: March 28, 2017Assignee: CANON KABUSHIKI KAISHAInventor: Takayasu Kanesada
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Patent number: 9601533Abstract: A method of manufacturing a solid-state imaging apparatus, comprising preparing a semiconductor substrate including a photoelectric conversion portion and a structure which includes an insulating member formed on the photoelectric conversion portion and a wiring pattern formed in the insulating member, forming a film made of SiC and/or SiCN on the structure, forming an opening immediately above the photoelectric conversion portion by removing part of the film and part of the insulating member, and depositing a member in the opening and on the film, and forming a light-guide portion by polishing the member so as to expose the film.Type: GrantFiled: June 3, 2014Date of Patent: March 21, 2017Assignee: Canon Kabushiki KaishaInventors: Yusuke Tsukagoshi, Shunsuke Nakatsuka, Takayasu Kanesada
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Publication number: 20160353044Abstract: A photoelectric conversion device has an insulator film disposed on a silicon layer having a photoelectric conversion region, the insulator film having a portion overlapped with the photoelectric conversion region, a silicon oxide film disposed on the insulator film, the silicon oxide film having a portion overlapped with the photoelectric conversion region, an electroconductive member disposed between the insulator film and the silicon oxide film, and a silicon oxide layer disposed between the electroconductive member and the silicon oxide film, in which the portion overlapped with the photoelectric conversion region of the silicon oxide film is in contact with the portion overlapped with the photoelectric conversion region of the insulator film and the hydrogen concentration of the silicon oxide film is greater than the hydrogen concentration of the silicon oxide layer.Type: ApplicationFiled: May 26, 2016Publication date: December 1, 2016Inventors: Akihiro Kawano, Yukinobu Suzuki, Nobutaka Ukigaya, Takayasu Kanesada, Takeshi Aoki, Hiroshi Takakusagi
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Publication number: 20160268332Abstract: A method for manufacturing a solid-state image sensor, the method comprising preparing a substrate including a photoelectric conversion portion, forming, on the substrate, a structure which includes a first member made of a material containing silicon oxide and a second member arranged on the first member and made of a material containing silicon carbide, forming an opening in a position above the photoelectric conversion portion in the structure by removing a part of the first and the second members, and forming a transparent member in the opening, wherein the second member is formed at a first temperature and the transparent member is formed at a second temperature lower than the first temperature.Type: ApplicationFiled: February 29, 2016Publication date: September 15, 2016Inventor: Takayasu Kanesada
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Publication number: 20150179867Abstract: In a method for manufacturing a photoelectric conversion device which includes: a substrate including a photoelectric conversion element; and a light guide which includes an insulator having an opening corresponding to the photoelectric conversion element and containing silicon oxide and a member located in the opening and containing silicon nitride, the method includes: forming a first silicon nitride film which forms the member in the opening by a parallel plate type plasma CVD apparatus; and forming a second silicon nitride film which forms the member in the opening and on the first silicon nitride film by a high density plasma CVD apparatus. In the photoelectric conversion device, the first silicon nitride film has a thickness of 55 nm or more.Type: ApplicationFiled: December 22, 2014Publication date: June 25, 2015Inventors: Tetsuya Kimura, Takayasu Kanesada, Toru Eto, Takaharu Kondo
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Publication number: 20140375853Abstract: A method of manufacturing a solid-state imaging apparatus, comprising preparing a semiconductor substrate including a photoelectric conversion portion and a structure which includes an insulating member formed on the photoelectric conversion portion and a wiring pattern formed in the insulating member, forming a film made of SiC and/or SiCN on the structure, forming an opening immediately above the photoelectric conversion portion by removing part of the film and part of the insulating member, and depositing a member in the opening and on the film, and forming a light-guide portion by polishing the member so as to expose the film.Type: ApplicationFiled: June 3, 2014Publication date: December 25, 2014Applicant: CANON KABUSHIKI KAISHAInventors: Yusuke Tsukagoshi, Shunsuke Nakatsuka, Takayasu Kanesada