Abstract: An electrode structure includes: a plurality of pixel electrodes arranged separately from each other; and a plurality of dielectric layers laminated in a first direction with respect to the plurality of pixel electrodes, in which the plurality of dielectric layers includes: a first dielectric layer that spreads over the plurality of pixel electrodes in a direction intersecting with the first direction; and a second dielectric layer that includes dielectric material having a refractive index higher than that of the first dielectric layer, sandwiches the first dielectric layer together with the plurality of pixel electrodes, and has a slit at a position overlapping space between pixel electrodes adjacent when viewed from the first direction.

Abstract: [Task to Be Achieved] To provide a chemically amplified type positive copolymer for semiconductor lithography, which has eliminated the problems of prior art, has a high development contrast, and has excellent resolution in fine-pattern formation; a composition for semiconductor lithography which contains the copolymer; and a process for producing the copolymer. [Means for Achievement] The copolymer for semiconductor lithography according to the present invention is a copolymer which has at least (A) a repeating unit having a structure which has an alkali-soluble group protected by an acid-labile, dissolution-suppressing group, (B) a repeating group having a lactone structure and (C) a repeating group having an alcoholic hydroxyl group and which is characterized by having an acid value of 0.01 mmol/g or less as determined by dissolving the copolymer in a solvent and subjecting the solution to neutralization titration with a solution of an alkali metal hydroxide using Bromothymol Blue as an indicator.

Abstract: The present invention provides a copolymer which can prevent problems associated with immersion lithography (including occurrence of a pattern defect such as water mark, and variation in sensitivity or abnormal patterning due to elution of an additive such as a radiation-sensitive acid-generator) and which provides surface characteristics suitable for immersion lithography, and a composition containing the copolymer.

Abstract: In order to improve a resist pattern shape in a semiconductor lithography process, which is a factor largely affecting on a processing precision, an integration degree and yield, a copolymer for semiconductor lithography where a composition of a hydroxyl group-containing repeating unit in a low molecular weight region is controlled, and a method of producing the same are provided. According to the invention, in a copolymer for semiconductor lithography, which is obtained by copolymerizing a monomer having a hydroxyl group and a monomer having no hydroxyl group, when a copolymer of which composition of a hydroxyl group-containing repeating unit is controlled is used, the object can be achieved.

Abstract: In order to improve a resist pattern shape in a semiconductor lithography process, which is a factor largely affecting on a processing precision, an integration degree and yield, a copolymer for semiconductor lithography where a composition of a hydroxyl group-containing repeating unit in a low molecular weight region is controlled, and a method of producing the same are provided. According to the invention, in a copolymer for semiconductor lithography, which is obtained by copolymerizing a monomer having a hydroxyl group and a monomer having no hydroxyl group, when a copolymer of which composition of a hydroxyl group-containing repeating unit is controlled is used, the object can be achieved.

Abstract: [Task to be Achieved] To provide a chemically amplified type positive copolymer for semiconductor lithography, which has eliminated the problems of prior art, has a high development contrast, and has excellent resolution in fine-pattern formation; a composition for semiconductor lithography which contains the copolymer; and a process for producing the copolymer. [Means for Achievement] The copolymer for semiconductor lithography according to the present invention is a copolymer which has at least (A) a repeating unit having a structure which has an alkali-soluble group protected by an acid-labile, dissolution-suppressing group, (B) a repeating group having a lactone structure and (C) a repeating group having an alcoholic hydroxyl group and which is characterized by having an acid value of 0.01 mmol/g or less as determined by dissolving the copolymer in a solvent and subjecting the solution to neutralization titration with a solution of an alkali metal hydroxide using Bromothymol Blue as an indicator.

Abstract: The present invention provides a copolymer which can prevent problems associated with immersion lithography (including occurrence of a pattern defect such as water mark, and variation in sensitivity or abnormal patterning due to elution of an additive such as a radiation-sensitive acid-generator) and which provides surface characteristics suitable for immersion lithography, and a composition containing the copolymer.

Abstract: In order to improve a resist pattern shape in a semiconductor lithography process, which is a factor largely affecting on a processing precision, an integration degree and yield, a copolymer for semiconductor lithography where a composition of a hydroxyl group-containing repeating unit in a low molecular weight region is controlled, and a method of producing the same are provided. According to the invention, in a copolymer for semiconductor lithography, which is obtained by copolymerizing a monomer having a hydroxyl group and a monomer having no hydroxyl group, when a copolymer of which composition of a hydroxyl group-containing repeating unit is controlled is used, the object can be achieved.