Abstract: A working machine is provided which can suppress the adhesion of rain water, snow, and melting snow to an electrical connecting portion between a battery containing portion side and a battery side. An electrically driven snowplow as a working machine includes a battery pack incorporating a battery, a battery containing portion disposed so as to allow the battery pack to be inserted and removed in a direction inclined from a vertical direction, and an electrode portion configured to be connected with an output terminal of a battery disposed on an upper surface of the battery containing portion.

Abstract: An apparatus system includes: a plurality of driving sources, each including a driving source control device; and an integrated control device that controls the respective driving source control devices of the plurality of driving sources, wherein the integrated control device, based on an operational situation of each of the plurality of driving sources, causes the plurality of driving sources to perform complementary operation to each other, and performs updating of a control program of each of the driving source control devices of the plurality of driving sources.

Abstract: Provided is an electric moving machine including: a plurality of wheels provided to a vehicle body; traveling motors each provided for the corresponding wheel and configured to drive the corresponding wheel; and a driving-unit control device configured to control driving of each of the traveling motors, in which the driving-unit control device, in a case in which an error is detected in one or some of the traveling motors during traveling, stops the traveling motors with an error detected, determines a combination of traveling motors to improve a balance of driving force in a traveling direction which broke due to the stopping of the traveling motors, and controls, based on the combination, driving of each of the traveling motors with no error detected.

Abstract: An information processing apparatus that processes information related to a rental of a battery, includes: a first acquisition unit configured to acquire performance degradation information before the rental of the battery; a second acquisition unit configured to acquire performance degradation information after the rental of the battery; and a decision unit configured to decide a treatment for a rental user of the battery, based on the performance degradation information that is acquired by the first acquisition unit and the performance degradation information that is acquired by the second acquisition unit.

Abstract: There are provided a solid-state imaging device capable of improving quantum efficiency while suppressing occurrence of color mixture, and a method of manufacturing such a solid-state imaging device. According to the present disclosure, a solid-state imaging device (100, 100a, 100b, 100c) is provided. The solid-state imaging device (100, 100a, 100b, 100c) includes a first region (4, 4a, 4b) and a second region (5, 5a) in a light receiving surface of an imaging pixel (1, 1a, 1b, 1c). The first region (4, 4a, 4b) is provided with unevenness. The second region (5, 5a) is provided with unevenness having a pitch narrower than that of the unevenness in the first region (4, 4a, 4b).

Abstract: A work machine comprises, a drive source, a working unit that includes a rotary member rotated by the drive source and performs a predetermined work by rotation of the rotary member, and a control unit that controls the drive source so that output of the rotary member partially takes different values in one rotation of the rotary member.

Abstract: A solid-state imaging device includes: a first photodiode made up of a first first-electroconductive-type semiconductor region formed on a first principal face side of a semiconductor substrate, and a first second-electroconductive-type semiconductor region formed within the semiconductor substrate adjacent to the first first-electroconductive-type semiconductor region; a second photodiode made up of a second first-electroconductive-type semiconductor region formed on a second principal face side of the semiconductor substrate, and a second second-electroconductive-type semiconductor region formed within the semiconductor substrate adjacent to the second first-electroconductive-type semiconductor region; and a gate electrode formed on the first principal face side of the semiconductor substrate; with impurity concentration of a connection face between the second first-electroconductive-type semiconductor region and the second second-electroconductive-type semiconductor region being equal to or greater than im

Abstract: One aspect of an invention is a power receiving apparatus, configured to be able to receive electric power from a plurality of battery units each including a processor configured to control a power feeding function, the power receiving apparatus comprising a plurality of connection portions capable of electrically connecting the plurality of battery units, wherein the plurality of connection portions are configured such that voltages supplied to the plurality of processors of the plurality of battery units have different values when the plurality of battery units are electrically connected to the connection portions

Abstract: Fabrication of an alignment mark in a semiconductor device is simplified. A semiconductor device including a semiconductor substrate, an epitaxial layer, and an alignment mark is provided. The epitaxial layer included in the semiconductor device includes a single-crystalline semiconductor that is epitaxially grown on a surface of the semiconductor substrate included in the semiconductor device. The alignment mark included in the semiconductor device is disposed between the semiconductor substrate and the epitaxial layer.

Abstract: A solid-state imaging device includes: a first photodiode made up of a first first-electroconductive-type semiconductor region formed on a first principal face side of a semiconductor substrate, and a first second-electroconductive-type semiconductor region formed within the semiconductor substrate adjacent to the first first-electroconductive-type semiconductor region; a second photodiode made up of a second first-electroconductive-type semiconductor region formed on a second principal face side of the semiconductor substrate, and a second second-electroconductive-type semiconductor region formed within the semiconductor substrate adjacent to the second first-electroconductive-type semiconductor region; and a gate electrode formed on the first principal face side of the semiconductor substrate; with impurity concentration of a connection face between the second first-electroconductive-type semiconductor region and the second second-electroconductive-type semiconductor region being equal to or greater than im

Abstract: In order to improve the efficiency of inducing differentiation of pluripotent stem cells, provided is a method for promoting differentiation of pluripotent stem cells, the method including a step of culturing pluripotent stem cells in a medium, wherein the medium is a medium containing a) an insulin-like growth factor, b) an insulin analogue preparation containing no zinc, c) an insulin analogue preparation containing a low concentration of zinc, or d) a compound exhibiting an insulin-like action.

Abstract: Fabrication of an alignment mark in a semiconductor device is simplified. A semiconductor device including a semiconductor substrate, an epitaxial layer, and an alignment mark is provided. The epitaxial layer included in the semiconductor device includes a single-crystalline semiconductor that is epitaxially grown on a surface of the semiconductor substrate included in the semiconductor device. The alignment mark included in the semiconductor device is disposed between the semiconductor substrate and the epitaxial layer.

Abstract: The present technology reduces influence of a crystal defect which has occurred on a semiconductor substrate in the vicinity of an element isolation region. A semiconductor device includes a semiconductor element region, an element isolation region and a high-concentration impurity region. The semiconductor element region is disposed on a surface of the semiconductor substrate. An element isolation region is formed in a predetermined depth from the surface of the semiconductor substrate and isolates the semiconductor element region. The high-concentration impurity region is constituted to have impurity concentration higher than impurity concentration of the semiconductor substrate, is disposed between the semiconductor element region and the element isolation region, and is not disposed below the element isolation region.

Abstract: A solid-state imaging device, method for producing solid-state imaging device and electronic apparatus are provided. The solid-state imaging device includes a substrate, with a plurality of pixels formed in the substrate. In addition, a plurality of groups are formed in the substrate, and in particular in pixel isolation regions between adjacent pixels. The grooves extend from a first surface of the substrate towards a second surface of the substrate. An embedded film extends into the grooves. At least some of the grooves include a first stage near the first surface of the substrate and a second stage near the second surface of the substrate that are defined by walls of the grooves, wherein the first stage is wider than the second stage, and wherein a step is present between the first and second stages. In addition, the device includes a light shielding film adjacent the first surface of the substrate that overlies the grooves.

Abstract: A solid-state imaging device includes a plurality of photoelectric conversion portions each provided in a semiconductor substrate and receives incident light through a light sensing surface, and a pixel separation portion provided to electrically separate a plurality of pixels. At least a pinning layer and a light shielding layer are provided in an inner portion of a trench provided on a side portion of each of the photoelectric conversion portions in an incident surface side, the trench includes a first trench and a second trench formed to be wider than the first trench in a portion shallower than the first trench, the pinning layer is formed in an inner portion of the first trench to cover an inside surface of the second trench, and the light shielding layer is formed to bury an inner portion of the second trench at least via the pinning layer.

Abstract: A working machine is provided which can suppress the adhesion of rain water, snow, and melting snow to an electrical connecting portion between a battery containing portion side and a battery side. An electrically driven snowplow as a working machine includes a battery pack incorporating a battery, a battery containing portion disposed so as to allow the battery pack to be inserted and removed in a direction inclined from a vertical direction, and an electrode portion configured to be connected with an output terminal of a battery disposed on an upper surface of the battery containing portion.

Abstract: The present technology relates to a solid-state imaging device, manufacturing method of a solid-state imaging device, and an electronic device, which can provide a solid-state imaging device having further improved features such as reduced optical color mixing and the like. Also, an electronic device using the solid-state imaging device thereof is provided. According to a solid-state imaging device having a substrate and multiple photoelectric converters that are formed on the substrate, an insulating film forms an embedded element separating unit. The element separating unit is configured of an insulating film having a fixed charge that is formed so as to coat the inner wall face of a groove portion, within the groove portion which is formed in the depth direction from the light input side of the substrate.

Abstract: The present technology relates to a solid-state imaging device, manufacturing method of a solid-state imaging device, and an electronic device, which can provide a solid-state imaging device having further improved features such as reduced optical color mixing and the like. Also, an electronic device using the solid-state imaging device thereof is provided. According to a solid-state imaging device having a substrate and multiple photoelectric converters that are formed on the substrate, an insulating film forms an embedded element separating unit. The element separating unit is configured of an insulating film having a fixed charge that is formed so as to coat the inner wall face of a groove portion, within the groove portion which is formed in the depth direction from the light input side of the substrate.

Abstract: The present technology relates to a solid-state imaging device, manufacturing method of a solid-state imaging device, and an electronic device, which can provide a solid-state imaging device having further improved features such as reduced optical color mixing and the like. Also, an electronic device using the solid-state imaging device thereof is provided. According to a solid-state imaging device having a substrate and multiple photoelectric converters that are formed on the substrate, an insulating film forms an embedded element separating unit. The element separating unit is configured of an insulating film having a fixed charge that is formed so as to coat the inner wall face of a groove portion, within the groove portion which is formed in the depth direction from the light input side of the substrate.

Abstract: A solid-state imaging device includes a plurality of photoelectric conversion portions each provided in a semiconductor substrate and receives incident light through a light sensing surface, and a pixel separation portion provided to electrically separate a plurality of pixels. At least a pinning layer and a light shielding layer are provided in an inner portion of a trench provided on a side portion of each of the photoelectric conversion portions in an incident surface side, the trench includes a first trench and a second trench formed to be wider than the first trench in a portion shallower than the first trench, the pinning layer is formed in an inner portion of the first trench to cover an inside surface of the second trench, and the light shielding layer is formed to bury an inner portion of the second trench at least via the pinning layer.