Patents by Inventor Takayuki Fukasawa

Takayuki Fukasawa has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20170271680
    Abstract: An electrode material for a nonaqueous electrolyte battery of the present embodiment includes a composite particle, the composite particle contains a silicon dioxide particle having an average primary particle size of D1, a silicon particle having an average primary particle size of D2, and a carbon material. D1 is 5 nm or more and 80 nm or less. The ratio D2/D1 of D2 to D1 is 0.3 or more and 8 or less.
    Type: Application
    Filed: September 8, 2016
    Publication date: September 21, 2017
    Applicant: KABUSHIKI KAISHA TOSHIBA
    Inventors: Takayuki FUKASAWA, Kenji ESSAKI, Takashi KUBOKI, Shinsuke MATSUNO, Tomokazu MORITA
  • Publication number: 20170267932
    Abstract: A fuel synthesis catalyst of an embodiment for hydrogenating a gas includes at least one selected from the group consisting of; carbon dioxide and carbon monoxide, the catalyst comprising, an oxide base material containing at least one oxide selected from the group consisting of; Al2O3, MgO, TiO2, and SiO2, first metal particles containing at least one metal selected from the group consisting of; Ni, Co, Fe, and Cu and brought into contact with the oxide base material, and a porous oxide layer containing at least one selected from the group consisting of; CeO2, ZrO2, TiO2, and SiO2 and having an interface with each of the first metal particles and the oxide base material.
    Type: Application
    Filed: September 2, 2016
    Publication date: September 21, 2017
    Applicant: Kabushiki Kaisha Toshiba
    Inventors: Takayuki FUKASAWA, Kenji ESSAKI, Shinsuke MATSUNO, Takashi KUBOKI
  • Publication number: 20170266636
    Abstract: A fuel synthesis catalyst of an embodiment for hydrogenating a gas includes at least one selected from the group consisting of; carbon dioxide and carbon monoxide, the catalyst comprising, a base material containing at least one oxide selected from the group consisting of; Al2O3, MgO, TiO2, and SiO2, first metals containing at least one metal selected from the group consisting of; Ni, Co, Fe, and Cu and brought into contact with the base material, and a first oxide containing at least one selected from the group consisting of; CeO2, ZrO2, TiO2, and SiO2 and having an interface with each of the first metals and the base material. The first metals exist on an outer surface of the base material, and on a surface of the base material in fine pores having opening ends on the outer surface of the base material and inside the base material. The first metals and the first oxide exist in the fine pores. The first metals have interfaces with the base material in the fine pores.
    Type: Application
    Filed: March 13, 2017
    Publication date: September 21, 2017
    Applicant: Kabushiki Kaisha Toshiba
    Inventors: Takayuki FUKASAWA, Kenji Essaki, Shinsuke Matsuno, Takashi Kuboki, Yasuhiro Goto, Seiichi SUENAGA
  • Patent number: 9722089
    Abstract: A thin film transistor array panel includes a substrate and a gate line disposed on the substrate. The gate line includes a gate electrode. A gate insulating layer is disposed on the gate line. An oxide semiconductor layer is disposed on the gate insulating layer. The oxide semiconductor layer at least partially overlaps the gate electrode. A data line is disposed on the oxide semiconductor layer. The data line includes a source electrode and a drain electrode facing the source electrode. The oxide semiconductor layer includes tungsten, indium, zinc, or tin.
    Type: Grant
    Filed: September 10, 2014
    Date of Patent: August 1, 2017
    Assignee: SAMSUNG DISPLAY CO., LTD.
    Inventors: Yeon Keon Moon, Sang Woo Sohn, Katsushi Kishimoto, Takayuki Fukasawa, Sang Won Shin
  • Patent number: 9644270
    Abstract: An oxide semiconductor depositing apparatus includes a heating chamber which is configured to heat and plasma-treat a first substrate including an insulation layer, and includes a chamber body, a heater disposed in the chamber body which is configured to heat the first substrate, and a cathode plate spaced apart from the heater, a high frequency voltage applied to the cathode plate, and a first process chamber which is configured to provide an oxide semiconductor layer on the insulation layer of the first substrate.
    Type: Grant
    Filed: October 14, 2014
    Date of Patent: May 9, 2017
    Assignee: SAMSUNG DISPLAY CO., LTD.
    Inventors: Katsushi Kishimoto, Yeon-Keon Moon, Sang-Woo Sohn, Takayuki Fukasawa, Sang-Won Shin
  • Publication number: 20170092942
    Abstract: The active material for a nonaqueous electrolyte secondary battery of the present embodiment includes a core particle and a carbon layer. The core particle is formed of silicon particles having a twinned crystal in part of a surface. The carbon layer coats the core particle.
    Type: Application
    Filed: March 17, 2014
    Publication date: March 30, 2017
    Applicant: KABUSHIKI KAISHA TOSHIBA
    Inventors: Takayuki FUKASAWA, Kenji ESSAKI, Tomokazu MORITA, Takashi KUBOKI, Yasuhiro GOTO
  • Publication number: 20170092773
    Abstract: An oxide sputtering target includes at least one of indium (In), zinc (Zn), tin (Sn), and gallium (Ga), and tungsten (W) in an amount from 0.005 mol % to 1 mol %.
    Type: Application
    Filed: December 9, 2016
    Publication date: March 30, 2017
    Inventors: KATSUSHI KISHIMOTO, YOSHINORI TANAKA, YEON KEON MOON, SANG WOO SOHN, SANG WON SHIN, TAKAYUKI FUKASAWA
  • Publication number: 20170077498
    Abstract: An electrode for a nonaqueous electrolyte battery of the embodiment includes a current collector; and an active material layer which includes an active material and is formed on the current collector. The active material layer includes at least one of a silicon particle and a silicon oxide particle. The active material layer has a plurality of cracks extending in a thickness direction of the active material layer.
    Type: Application
    Filed: September 8, 2016
    Publication date: March 16, 2017
    Applicant: Kabushiki Kaisha Toshiba
    Inventors: Takayuki FUKASAWA, Kenji ESSAKI, Tomokazu MORITA, Takashi KUBOKI
  • Patent number: 9543444
    Abstract: An oxide sputtering target includes at least one of indium (In), zinc (Zn), tin (Sn), and gallium (Ga), and tungsten (W) in an amount from 0.005 mol % to 1 mol %.
    Type: Grant
    Filed: September 16, 2014
    Date of Patent: January 10, 2017
    Assignee: SAMSUNG DISPLAY CO., LTD.
    Inventors: Katsushi Kishimoto, Yoshinori Tanaka, Yeon Keon Moon, Sang Woo Sohn, Sang Won Shin, Takayuki Fukasawa
  • Patent number: 9530622
    Abstract: A sputtering device and a gas supply pipe for a sputter device are disclosed. In one aspect, the sputtering device includes a chamber, a stage located in the chamber and configured to receive a substrate thereon, and a plurality of gas supply pipes arranged substantially parallel to each other. The gas supply pipes have a plurality of gas supply holes and the gas supply pipes are configured to supply gas into the chamber. The sputtering device further includes at least one exhaust pump placed at a side of the chamber, wherein the exhaust pump is substantially symmetrically arranged with respect to a center axis of the side of the chamber.
    Type: Grant
    Filed: November 7, 2014
    Date of Patent: December 27, 2016
    Assignee: Samsung Display Co., Ltd.
    Inventors: Takayuki Fukasawa, Yeon-Keon Moon, Sang-Woo Sohn, Katsushi Kishimoto, Sang-Won Shin
  • Publication number: 20160372753
    Abstract: A negative electrode active material of an embodiment for a nonaqueous electrolyte battery includes silicon or silicon oxide including silicon inside, a carbonaceous substance containing the silicon or the silicon oxide including silicon inside, and a phase including a silicate compound and a conductive assistant, the phase being interposed between the silicon or the silicon oxide including silicon inside and the carbonaceous substance. The silicate compound is a complexed oxide including an oxide including at least one element selected from the group consisting of; an alkaline earth element, a transition metal element, and a rare-earth element and a silicon oxide.
    Type: Application
    Filed: September 2, 2016
    Publication date: December 22, 2016
    Applicant: Kabushiki Kaisha Toshiba
    Inventors: Takayuki FUKASAWA, Kenji ESSAKI, Tomokazu MORITA, Takashi KUBOKI
  • Publication number: 20160372744
    Abstract: An active material of an embodiment for a nonaqueous electrolyte battery includes a complex. The complex includes a covering material including an M-O—C mixed body; and particles including at least one element of M. The particles are included in the covering material. The M includes at least one element selected from the group consisting of; Si, Sn, Al, and Ti. The particles including the at least one element of M include the at least one element of M or an alloy including the at least one element of M. The M-O—C mixed body includes at least three elements of M, O, and C. The M-O—C mixed body includes a point at which the following conditional expressions: 0.6?M/O?5 (molar ratio) and 0.002?M/C?0.1 (molar ratio) are simultaneously satisfied. The M-O—C mixed body includes the at least three elements of M, O, and C in a region excluding the particles including the at least one element of M when elementary composition analysis of the complex is performed by TEM-EDX with a beam diameter of 1 nm.
    Type: Application
    Filed: September 2, 2016
    Publication date: December 22, 2016
    Applicant: Kabushiki Kaisha Toshiba
    Inventors: Kenji ESSAKI, Tomokazu MORITA, Takayuki FUKASAWA, Takashi KUBOKI
  • Patent number: 9484200
    Abstract: A thin film transistor includes a gate electrode, a source electrode, a drain electrode disposed on the same layer as the source electrode and facing the source electrode, an oxide semiconductor layer disposed between the gate electrode and the source electrode or the drain electrode, and a gate insulating layer disposed between the gate electrode and the source electrode or the drain electrode, in which the oxide semiconductor layer includes thallium and at least one of indium, zinc, tin, and gallium. Also an oxide sputtering target including: an oxide including thallium (Tl); and at least one of indium, zinc, tin, and gallium.
    Type: Grant
    Filed: October 9, 2013
    Date of Patent: November 1, 2016
    Assignee: SAMSUNG DISPLAY CO., LTD.
    Inventors: Katsushi Kishimoto, Takayuki Fukasawa
  • Publication number: 20160281999
    Abstract: A water collecting system of an embodiment has a water supplying unit with a water-permeable membrane, a first chamber and a second chamber separated from the first chamber by the permeable membrane, a vacuum unit, a water collecting unit collecting liquid water, a first switching valve, a cooling unit cooling the water collecting unit; and an air blowing unit sending first gas to the first chamber. The second chamber, the vacuum unit, the water collecting unit, and the first switching valve comprise a first loop circuit in which second gas flow. The vacuum unit decompresses the second gas flowing in the first loop circuit and reduces a pressure in the second gas in comparison with a pressure in the first gas. The cooling unit collects the liquid water by cooling the second gas passing through the water collecting unit and condensing gaseous water included in the second gas.
    Type: Application
    Filed: March 8, 2016
    Publication date: September 29, 2016
    Applicant: Kabushiki Kaisha Toshiba
    Inventors: Ryosuke YAGI, Seiichi SUENAGA, Norihiro TOMIMATSU, Takayuki FUKASAWA, Koichi HARADA
  • Publication number: 20160285101
    Abstract: In one embodiment, an electrode for a nonaqueous electrolyte battery is provided with a collector, a first mixture layer formed on the collector, and a second mixture layer formed on a surface of the first mixture layer which is opposite to the collector, and the first mixture layer contains a first binding agent of at least one kind of polyamic acid, polyamide-imide and polyimide, and the second mixture layer contains a second binding agent obtained by polymerizing monomers of at least one kind of acrylic acid, methacrylic acid and acrylonitrile.
    Type: Application
    Filed: March 23, 2016
    Publication date: September 29, 2016
    Applicant: Kabushiki Kaisha Toshiba
    Inventors: Sara YOSHIO, Takayuki Fukasawa, Miho Muramatsu, Yasuyuki Hotta, Takashi Kuboki
  • Publication number: 20160164076
    Abstract: An active material for a nonaqueous electrolyte battery according to the embodiment is a composite including at least: a carbonaceous substance; and silicon-containing particles dispersed in the carbonaceous substance, the silicon-containing particles including at least one of silicon, a silicon alloy and a silicon oxide, wherein in an argon ion laser Raman spectrum, the half-width (?G) of a peak having a maximum intensity I1 in the range of 1575 cm?1 or more and 1625 cm?1 or less is 100 cm?1 or more and 150 cm?1 or less, and the intensity ratio of a peak having a maximum intensity I2 in the range of 500 cm?1 or more and 550 cm?1 or less to the peak having the maximum intensity I1 in the range of 1575 cm?1 or more and 1625 cm?1 or less (I2/I1) is 0.25 or more and 0.50 or less.
    Type: Application
    Filed: December 2, 2015
    Publication date: June 9, 2016
    Applicant: Kabushiki Kaisha Toshiba
    Inventors: Kenji ESSAKI, Takayuki FUKASAWA, Miho MURAMATSU, Tomokazu MORITA, Takashi KUBOKl, Yumiko KITA
  • Patent number: 9318737
    Abstract: There is provided a negative electrode material for non-aqueous electrolyte secondary batteries, the negative electrode material being a silicon oxide represented by the composition formula, SiOx, containing silicon and silicon oxide, in which x satisfies the relation of 0.1?x?0.8; the silicon oxide contains crystalline silicon; among the particles of crystalline silicon having a diameter of 1 nm or greater, the proportion by number of particles having a diameter of 100 nm or less is 90% or greater; and the BET specific surface area of the silicon oxide is larger than 100 m2/g.
    Type: Grant
    Filed: February 22, 2013
    Date of Patent: April 19, 2016
    Assignee: Kabushiki Kaisha Toshiba
    Inventors: Kenji Essaki, Takayuki Fukasawa, Tomokazu Morita, Noikazu Osada, Yasuyuki Hotta, Takashi Kuboki, Toshiro Hiraoka
  • Patent number: 9306221
    Abstract: A fuel electrode for a solid oxide electrochemical cell includes: an electrode layer constituted of a mixed phase including an oxide having mixed conductivity and another oxide selected from the group including an aluminum-based oxide and a magnesium-based composite oxide, said another oxide having, supported on a surface part thereof, particles of at least one member selected from nickel, cobalt, and nickel-cobalt alloys.
    Type: Grant
    Filed: March 14, 2013
    Date of Patent: April 5, 2016
    Assignee: Kabushiki Kaisha Toshiba
    Inventors: Takayuki Fukasawa, Keizo Shimamura, Yoshio Hanakata, Masato Yoshino, Kentaro Matsunaga, Tsuneji Kameda, Yoshiyasu Itoh
  • Publication number: 20160087267
    Abstract: An electrode active material for a nonaqueous electrolyte secondary battery includes a composite of a lithium-containing silicon oxide and a silicon-containing compound which contains at least one of silicon and silicon oxide, wherein the lithium-containing silicon oxide contains Li2Si2O5 as a main component.
    Type: Application
    Filed: September 15, 2015
    Publication date: March 24, 2016
    Applicant: Kabushiki Kaisha Toshiba
    Inventors: Sara YOSHIO, Kenji ESSAKI, Takayuki FUKASAWA, Tomokazu MORITA, Takashi KUBOKl
  • Patent number: 9266186
    Abstract: A substrate-treating apparatus includes a process chamber including a space therein, a lower electrode which is in the space of the process chamber and supports the substrate, an upper electrode which faces the lower electrode in the process chamber, a high frequency supply line which includes a feed point which applies a high frequency power to the lower electrode, and a modulator which asymmetrically supplies a dielectric substance to a lower portion of the lower electrode with reference to a center portion of the lower electrode.
    Type: Grant
    Filed: December 14, 2012
    Date of Patent: February 23, 2016
    Assignee: SAMSUNG DISPLAY CO., LTD.
    Inventors: Takayuki Fukasawa, Klhyuk Kim, Ji Hun Kim