Abstract: A thin coated film having a transmittance of 96% or more for light having a particular wavelength in a range of 300 to 700 nm is prepared by coating one or both surfaces of a thin film of a transparent resin having a uniform thickness of 0.5 to 10 .mu.m with a colorless metal fluoride or oxide all over the area thereof with a thickness of about 100 nm while holding the thin film in a uniformly tensional state.

Abstract: This invention relates to ceramic high dielectric composition with BaTiO.sub.3 as host component; and by containing 1-5 weight part of CaTiO.sub.3 and 2-3 weight parts of Ta.sub.2 O.sub.5 to 100 weight parts of the BaTiO.sub.3, a composition having dielectric constant of 3000 or above, a small voltage dependency, a large bending strength and good high frequency characteristic is provided; and it has a good characteristic when used as thin film type dielectric body like laminated ceramic capacitor.

Abstract: In a ceramic dielectric composition with BaTiO.sub.3 as host material, CaTiO.sub.3 and Sb.sub.2 O.sub.3 are added to be contained, and besides thereto any one of Nd.sub.2 O.sub.3, La.sub.2 O.sub.3 and Sm.sub.2 O.sub.3 are added to be included, thereby ceramic dielectric composition having high dielectric constant, small voltage dependency of characteristics, large bending force, and small equivalent series resistance in high frequency range is provided.Also, by having BaTiO.sub.3 as host material and adding CaTiO.sub.3 and Ta.sub.2 O.sub.5 thereto, and further adding Sb.sub.2 O.sub.3 or Pr.sub.6 O.sub.11, similar superior characteristics to the above-mentioned ceramic high dielectric composition is obtainable.Besides, by adding SiO.sub.2 to the above-mentioned ceramic high dielectric compositions, strength is further increased.These ceramic dielectric composition of high dielectric constant is suitable for, for example, dielectric substance of laminated ceramic capacitor.

Abstract: This invention relates to ceramic high dielectric composition with BaTiO.sub.3 as major component; and by containing 1-5 weight part of CaTiO.sub.3, 2-3 weight parts of Nb.sub.2 O.sub.5 to 100 weight parts of the BaTiO.sub.3, a composition having dielectric constant of 3000 or above, less voltage dependency, a large bending strength and good high frequency characteristic is provided; and it has a good characteristic when used as thin film type dielectric body like multilayered ceramic capacitor.

Abstract: A ceramic composition of a high dielectric constant is provided, which consists of 100 mol parts of barium metatitanate (BaTiO.sub.3), (2/3)(7.+-.1) mol parts of cerium dioxide, and 7.+-.1 mol parts of titanium dioxide (TiO.sub.2), and to which 0.05 to 0.2 mol part of MnO.sub.2 is added. The ceramic composition has a ceramic microstructure in which a grain size is as small as 2 to 3 .mu.m and a pore size is small to be not more than 3 .mu.m. The ceramic composition has a high dielectric constant of about 10,000, a high breakdown voltage, and little dependency on voltage. The ceramic composition is very suitable as a thin dielectric film for a laminated ceramic chip capacitor.

Abstract: Oxide thermistor compositions which comprise 100 atomic % of at least four kinds of cations which are (1) Mn ion, (2) Ni ion, (3) at least one kind of ion selected from the group consisting of Cu, Fe, and Cr, and (4) one kind of ion selected from the group consisting of Cr, Zr, and Li. These compositions have lower resistivity with higher B-constant and exhibit a high stability of resistance.

Abstract: Method for manufacturing a ceramic electronic component such as a voltage-dependent non-linear resistor element and a semiconductive ceramic capacitor is disclosed, in which a precisely uniform metal coating is formed on a surface of a ceramic and the metal coating is then heat treated to convert the metal of the metal coating to a metal compound to form a metal compound coating on the surface of the ceramic and/or diffuse a portion of or all of the metal coating into the ceramic, for attaining completely different electric properties than those of untreated ceramic. The present method is particularly useful in the application to a semiconductive ceramic capacitor.

Abstract: There is provided a voltage-dependent resistor comprising a bulk consisting essentially of zinc oxide as the major part and as additives 0.01 to 10 mol % of Bi.sub.2 O.sub.3, CoO, MnO, TiO and NiO and electrodes on the bulk, said electrodes having been formed by baking a silver paste comprising silver powder and a glass frit on the bulk, said glass frit containing as its principal content 80 to 95% by weight of Bi.sub.2 O.sub.3 and correspondingly 20 to 5% by weight of SiO.sub.2, said glass frit also containing 1 to 5 parts by weight of B.sub.2 O.sub.3 for 100 parts of said principal content. The electrodes can also contain minor amounts of CoO, Sb.sub.2 O.sub.3, a mixture of Sb.sub.2 O.sub.3 with Ag.sub.2 O or MgO, or a mixture of CoO with MgO or Ag.sub.2 O.