Abstract: An ionizing radiation conversion device of the present disclosure includes a first electrode, a second electrode, and an ionizing radiation conversion layer disposed between the first electrode and the second electrode. Here, the first electrode contains a first metal, the second electrode contains at least one selected from the group consisting of second metals and metal oxides, and the ionizing radiation conversion layer contains a perovskite compound. The difference of a value of electron affinity of the ionizing radiation conversion layer minus a value of work function of the first electrode is greater than or equal to 0 eV and less than or equal to 0.4 eV.

Abstract: A solar cell includes a first substrate, a first electrode layer, a first electron transport layer, a first photoelectric conversion layer, a first hole transport layer, a second electrode layer, a third electrode layer, a second electron transport layer, a second photoelectric conversion layer, a second hole transport layer, a fourth electrode layer, and a second substrate that are disposed in the order stated. The first photoelectric conversion layer includes a first perovskite compound, and the second photoelectric conversion layer includes a second perovskite compound. The first perovskite compound has a bandgap greater than a bandgap of the second perovskite compound.

Abstract: A solar cell module includes: a first substrate; a second substrate positioned so as to face the first substrate; a solar cell disposed on the first substrate so as to be interposed between the first and second substrates; a filler that fills a space between the first and second substrates; and a protective layer disposed on a principal surface of the solar cell that faces the second substrate. The solar cell has a multilayer structure including a photoelectric conversion layer containing a perovskite compound, a hole transport layer, and an electron transport layer. The protective layer contains a polyimide. The protective layer includes a first region that covers the principal surface of the solar cell and a second region in which the principal surface is exposed. A plurality of the first regions or a plurality of the second regions are arranged separately from each other in the protective layer.

Abstract: Provided is a solar cell comprising a first electrode; a second electrode; a perovskite photoabsorber layer located between the first electrode and the second electrode; a first semiconductor layer located between the first electrode and the photoabsorber layer; and a second semiconductor layer located between the second electrode and the photoabsorber layer. At least one electrode selected from the group consisting of the first electrode and the second electrode is light-transmissive. The first semiconductor layer contains Li. The second semiconductor layer contains LiN(SO2CF3)2. The second semiconductor layer contains poly[bis(4-phenyl)(2,4,6-trimethylphenyl)amine]. In the second semiconductor layer, a molar ratio of LiN(SO2CF3)2 to poly[bis(4-phenyl)(2,4,6-trimethylphenyl)amine] is not less than 0.15 and not more than 0.26.

Abstract: A solar cell includes: a first electrode; a first hole transport layer containing nickel; an inorganic material layer containing titanium; a light-absorbing layer converting light into electric charge; and a second electrode. The first electrode, the first hole transport layer, the inorganic material layer, the light-absorbing layer, and the second electrode are layered in that order. The light-absorbing layer contains a perovskite compound represented by a formula AMX3, where A is a monovalent cation, M is a divalent cation, and X is a monovalent anion.

Abstract: Provided is a solar cell comprising a first electrode; a second electrode; a perovskite photoabsorber layer located between the first electrode and the second electrode; a first semiconductor layer located between the first electrode and the photoabsorber layer; and a second semiconductor layer located between the second electrode and the photoabsorber layer. At least one electrode selected from the group consisting of the first electrode and the second electrode is light-transmissive. The first semiconductor layer contains Li. The second semiconductor layer contains LiN(SO2CF3)2. The second semiconductor layer contains poly[bis(4-phenyl)(2,4,6-trimethylphenyl)amine]. In the second semiconductor layer, a molar ratio of LiN(SO2CF3)2 to poly[bis(4-phenyl)(2,4,6-trimethylphenyl)amine] is not less than 0.15 and not more than 0.26.

Abstract: A solar cell module includes a substrate, and first and second cells connected in series. The first and second cells each include a first electrode, a first semiconductor layer, a second semiconductor layer and a second electrode stacked in this order on the substrate. The first semiconductor layer contains an oxide of a first metal and includes first and second portions. A groove separates the second semiconductor layers of the first and second cells. The groove and the first portion entirely overlap each other in a plan view. The first portion contains a second metal different from the first metal. A ratio of a number of atoms of the second metal to a number of atoms of all metals in the first portion is grater than a ratio of a number of atoms of the second metal to a number of atoms of all metals in the second portion.

Abstract: A solar cell includes: a first electrode; a first hole transport layer containing nickel; an inorganic material layer containing titanium; a light-absorbing layer converting light into electric charge; and a second electrode. The first electrode, the first hole transport layer, the inorganic material layer, the light-absorbing layer, and the second electrode are layered in that order. The light-absorbing layer contains a perovskite compound represented by a formula AMX3, where A is a monovalent cation, M is a divalent cation, and X is a monovalent anion.

Abstract: A solar cell includes: a first electrode; a hole transport layer containing nickel, lithium, and oxygen; a light-absorbing layer converting light into electric charge; and a second electrode. The first electrode, the hole transport layer, the light-absorbing layer, and the second electrode are layered in that order. The light-absorbing layer contains a perovskite compound represented by a formula AMX3, where A is a monovalent cation, M is a divalent cation, and X is a monovalent anion. A concentration of lithium in a first portion of the hole transport layer is less than a concentration of lithium in a second portion of the hole transport layer, the first portion facing the light-absorbing layer, the second portion facing the first electrode.

Abstract: A solar cell module includes a substrate, and first and second cells connected in series. The first and second cells each include a first electrode, a first semiconductor layer, a second semiconductor layer and a second electrode stacked in this order on the substrate. The first semiconductor layer contains an oxide of a first metal and includes first and second portions. A groove separates the second semiconductor layers of the first and second cells. The groove and the first portion entirely overlap each other in a plan view. The first portion contains a second metal different from the first metal. A ratio of a number of atoms of the second metal to a number of atoms of all metals in the first portion is grater than a ratio of a number of atoms of the second metal to a number of atoms of all metals in the second portion.

Abstract: The present invention provides a semiconductor film which adapts to the solar cell in both of band gap and electric resistivity or carrier concentration. In the present invention, a semiconductor film is composed of a semiconductor including group 11 elements, group 12 elements, group 13 elements and group 16 element of the ratio indicated as a composition formula (1) in below, AxByCzDw??(1) wherein A, B, C and D indicate said group 11 elements, said group 12 elements, said group 13 elements and said group 16 elements, respectively, x, y, z and w are respectively numbers indicating a composition ratio, and x and z satisfy a relationship of x/z>1.

Abstract: A solar cell 10 of the present invention comprises a first semiconductor layer 13 of n-type or i-type, a second semiconductor layer 14 of n-type or i-type, and a third semiconductor layer 15 of p-type, and said first, second and third semiconductor layers are laminated in that order. Then, electron affinity x1 [eV] of said first semiconductor layer 13 and electron affinity x2 [eV] of said second semiconductor layer 14 satisfy a relationship of 0<(x2?x1)<=0.3.

Abstract: The present invention provides an acoustooptic device usable even with light in the ultraviolet region, free from laser damage and optical damage, and excellent in acoustooptic performance and an optical imaging apparatus using the same. The acoustooptic device according to the present invention includes a high-frequency signal input part (65), a transducer part (64), and an acoustooptic medium (6). A high-frequency signal input from the high-frequency signal input part (65) is converted into a mechanical vibration by the transducer part (64), and an optical characteristic of the acoustooptic medium (6) varies depending on the mechanical vibration. The acoustooptic medium is formed of a Group III nitride crystal. The optical imaging apparatus according to the present invention includes a light source, an acoustooptic device, a driving circuit, and an image plane.

Abstract: It is an object of the present invention to provide a solar cell, and a method for manufacturing the same, that includes a layer having Zn, Mg, and O, and with which an increase in efficiency can be achieved. The solar cell includes a first electrode layer, a second electrode layer, a p-type semiconductor layer disposed between the first electrode layer and the second electrode layer, and a layer A disposed between the second electrode layer and the p-type semiconductor layer, the layer A includes Zn, Mg, O, and at least one element M selected from Ca, Sr, Ba, Al, In, and Ga, and photoelectromotive force is generated due to light that is incident from the second electrode layer side.

Abstract: It is an object of the present invention to provide a solar cell, and a method for manufacturing the same, that includes a layer having Zn, Mg, and O, and with which an increase in efficiency can be achieved. The solar cell includes a first electrode layer, a second electrode layer, a p-type semiconductor layer disposed between the first electrode layer and the second electrode layer, and a layer A disposed between the second electrode layer and the p-type semiconductor layer, the layer A includes Zn, Mg, O, and at least one element M selected from Ca, Sr, Ba, Al, In, and Ga, and photoelectromotive force is generated due to light that is incident from the second electrode layer side.

Abstract: The present invention provides an acoustooptic device usable even with light in the ultraviolet region, free from laser damage and optical damage, and excellent in acoustooptic performance and an optical imaging apparatus using the same. The acoustooptic device according to the present invention includes a high-frequency signal input part (65), a transducer part (64), and an acoustooptic medium (6). A high-frequency signal input from the high-frequency signal input part (65) is converted into a mechanical vibration by the transducer part (64), and an optical characteristic of the acoustooptic medium (6) varies depending on the mechanical vibration. The acoustooptic medium is formed of a Group III nitride crystal. The optical imaging apparatus according to the present invention includes a light source, an acoustooptic device, a driving circuit, and an image plane.

Abstract: A compound semiconductor film is formed with a compound containing: A. at least one element selected from zinc, tin, cadmium, indium, and gallium; B. at least one element selected from oxygen and sulfur; and C. an element of Group IIa. A solar cell is configured to include: a substrate (11); a conductive layer (12) formed on the substrate (11); a light-absorption layer (13) that is formed on the conductive layer (12) with a compound semiconductor containing an element of Group Ib, an element of Group IIIa, and an element of Group VIa; the above-described compound semiconductor film (14) formed on the light-absorption layer (13); and a transparent conductive layer (16) formed on the compound semiconductor film (14). Such a configuration provides a compound semiconductor film having a low electric resistivity. Further by employing the compound semiconductor film having a low electric resistivity as a buffer layer of a solar cell, the energy conversion efficiency of the solar cell is improved.

Abstract: A solar cell including a light-absorption layer of a compound semiconductor with a chalcopyrite crystal structure and having excellent characteristics such as conversion efficiency is provided. The solar cell includes a first electrode layer, a second electrode layer, a p-type semiconductor layer interposed between the first electrode layer and the second electrode layer, and an n-type semiconductor layer interposed between the p-type semiconductor layer and the second electrode layer. The p-type semiconductor layer includes a compound semiconductor containing a group Ib element, a group IIIb element and a group VI element and having a chalcopyrite structure. The bandgap of the p-type semiconductor layer increases from the n-type semiconductor layer side to the first electrode layer side monotonically. The bandgap of the p-type semiconductor layer on the main surface at the n-type semiconductor layer side is at least 1.

Abstract: An electronic device including a new oxide layer and a method for manufacturing the same are provided. The electronic device of the present invention includes an oxide layer, which is formed of an oxide containing an element from group IIa, an element from group IIb and an element from group IIIb. For example, it can be applied to a solar cell including a back electrode serving as a first electrode layer, a transparent electrically conductive film serving as a second electrode layer having a light-transmitting property, and a semiconductor layer that is provided between the back electrode and the transparent electrically conductive film and functions as a light-absorption layer, and including an oxide layer provided between the semiconductor layer and the transparent electrically conductive film.

Abstract: A solar cell includes a conductive substrate, and an insulating layer, a conducting layer and a semiconductor layer that are disposed on the substrate. A through hole is formed so as to penetrate the insulating layer and the conducting layer, and the through hole is filled with a semiconductor that composes the semiconductor layer. At least one element selected from the elements composing the conductive substrate diffuses into the semiconductor with which the through hole is filled.