Abstract: A laser light profile measuring device of the present disclosure includes a reflection attenuation part reflecting and attenuating at least part of laser light incident from a first direction in a direction different from the first direction to generate measurement target laser light traveling in the first direction, a capture unit placed on one side of the reflection attenuation part in the first direction and which captures the measurement target laser light, a cooling body covering at least part of the reflection attenuation part and the capture unit in a circumferential direction with respect to the first direction, a refrigerant supply unit forcibly feeding a refrigerant toward the cooling body, and a rotation support part supporting the reflection attenuation part, the cooling body, and the refrigerant supply unit to be rotatable around a rotation axis extending in a horizontal direction.

Abstract: There is provided a substrate processing apparatus, comprising: a substrate placing table which is provided to at least one of the temperature elevating part and the temperature lowering part formed in a container, and which causes heat-transfer to occur with the substrate placed on a placing surface; and a temperature control part which controls a temperature of the substrate placing table, wherein the temperature control part is configured to: control the temperature of the substrate placing table so that the temperature of the substrate to be loaded into the processing part is elevated to a predetermined temperature, before the substrate is placed on the substrate placing table, when the substrate placing table is provided to the temperature elevating part; and control the temperature of the substrate placing table so that the temperature of the processed substrate unloaded from the processing part is lowered to a predetermined temperature, before the substrate is placed on the substrate placing table, whe

Abstract: There is provided a substrate processing apparatus, comprising: a substrate placing table which is provided to at least one of the temperature elevating part and the temperature lowering part formed in a container, and which causes heat-transfer to occur with the substrate placed on a placing surface; and a temperature control part which controls a temperature of the substrate placing table, wherein the temperature control part is configured to: control the temperature of the substrate placing table so that the temperature of the substrate to be loaded into the processing part is elevated to a predetermined temperature, before the substrate is placed on the substrate placing table, when the substrate placing table is provided to the temperature elevating part; and control the temperature of the substrate placing table so that the temperature of the processed substrate unloaded from the processing part is lowered to a predetermined temperature, before the substrate is placed on the substrate placing table, whe

Abstract: There is provided a technique of suppressing unintended substrate processing from being performed after predetermined substrate processing is ended, including a substrate support section that supports a substrate in a processing chamber; a processing gas supply section that supplies a processing gas into the processing chamber; and a moving mechanism that moves the substrate support section in the processing chamber, between a first position to which the processing gas supplied from the processing gas supply section is blown, and a second position to which the processing gas supplied from the processing gas supply section is not blown.

Abstract: Techniques are provided to improve the quality of the thin films deposited on substrates. A substrate transporting mechanism is configured to transport a plurality of substrates arranged in a line along a transport path extending in a first container from an entrance to an exit, and to load and unload substrates into and out of a second container in order. The driving units to drive the substrate transporting mechanism are configured to be detachable from the substrate transporting mechanism provided in the first container and are respectively provided in a substrate loading chamber and a substrate unloading chamber.

Abstract: A part of an ICM housing including a portion to be repaired, welded to a wall of a reactor pressure vessel in operation, is cut and removed and a new ICM housing half is welded to the remaining part of the ICM housing to form a new ICM housing. The new ICM housing is provided at the welding portion thereof with a molten metal layer containing 4 wt % or more .delta. ferrite. A sleeve made of stainless steel is located at the welding portion of an inner peripheral surface of the new ICM housing made so as to be molten by a TIG welding machine to form the molten metal layer, with the molten metal layer preventing stress corrosion cracking of the new ICM housing.

Abstract: An ICM housing welded to a wall of a reactor pressure vessel in operation is provided with a molten metal layer containing 4 wt. % or more .delta. ferrite at a portion of an inner peripheral surface thereof which corresponds to a weld. A sleeve made of stainless steel is located at the competent portion of the inner peripheral surface of the ICM housing stainless steel so as to be molten by means of a TIG welding machine to form the molten metal layer. The molten metal layer prevents stress corrosion cracking of the ICM housing.