Abstract: In a positioning apparatus (40), a fixed scroll (34) engaged with a movable scroll (31) is pressed against a housing member (36), and then, is stirred to an appropriate position by applying impact force to the fixed scroll (34) in this state. Thus, the stirring of the fixed scroll (34) terminates in the state that the fixed scroll (34) is pressed against the housing member (36).

Abstract: After a molten metal of aluminum or an aluminum alloy having a temperature, which is higher than the liquidus line temperature of aluminum or the aluminum alloy by 5 to 200° C., is injected into a mold, when the mold is cooled to solidify the molten metal, the molten metal injected into the mold is pressurized at a pressure of 1.0 to 100 kPa from a high-temperature side to a low-temperature side, and the mean cooling rate is set to be 5 to 100° C./minute while the mold is cooled from the liquidus line temperature to 450° C., the temperature gradient formed in the mold being set to be in the range of from 1° C./cm to 50° C./cm.

Abstract: A heat radiator 10 includes: a first member 12 which has a recessed portion 12c in one side thereof and which has a large number of substantially circular truncated conical protruding portions 12d formed on the bottom face of the recessed portion 12c; and a second member which is fixed to the first member 12 on the side of the recessed portion 12c for defining an internal cavity and which contacts the tip end face of each of the large number of protruding portions 12d of the first member 12, wherein the first member 12 has a pair of through holes 12e for supplying a coolant into the internal cavity and for discharging the coolant from the internal cavity.

Abstract: In a metal/ceramic bonding substrate 10 wherein a circuit forming metal plate 14 is bonded to one side of a ceramic substrate 12 and a radiating metal base plate 16 is bonded to the other side thereof, a difference in level is provided along the entire circumference of the bonding surface of the ceramic substrate 12 to the metal base plate 16. The difference in level is provided by forming at least one of a rising portion 16a and a groove portion 116b on and in the metal base plate 16.

Abstract: After a metal member of an alloy containing copper and nickel is arranged on at least one side of a ceramic substrate, the metal member and the ceramic substrate are heated in an atmosphere of an inert gas or in vacuo at a temperature between solidus and liquidus lines of the alloy to bond the metal member directly to the ceramic substrate.

Abstract: There is provided a metal/ceramic bonding substrate having improved reliability to heat cycles, and a method for producing the same. In a metal/ceramic bonding substrate 10 wherein a circuit forming metal plate 14 is bonded to one side of a ceramic substrate 12 and a radiating metal base plate 16 is bonded to the other side thereof, at least part of the ceramic substrate 12 is embedded in the metal base plate 16. The ceramic substrate 12 is arranged substantially in parallel to the metal base member 16.

Abstract: A releasing device of the present invention selectively moves one of a pair of conveying members for conveying a sheet into or out of contact with the other conveying member. A first moving device moves the one conveying member into or out of contact with the other conveying member. A second moving device 72is connected to the first moving device for moving the one conveying member in a releasing direction independently of the operation of the first moving means.

Abstract: An aluminum plate 12 having a purity of 99.5% or more, preferably 99.9% or more, is caused to contact at least one side of a ceramic substrate 10 of aluminum nitride or alumina to be heated at a temperature of 620 to 650° C. in an inert gas to bond the aluminum plate 12 directly to the ceramic substrate 10.

Abstract: There is provided a metal/ceramic bonding substrate having improved reliability to heat cycles, and amethod for producing the same. Inametal/ceramic bonding substrate 10 wherein a circuit forming metal plate 14 is bonded to one side of a ceramic substrate 12 and a radiating metal base plate 16 is bonded to the other side thereof, at least part of the ceramic substrate 12 is embedded in the metal base plate 16. The ceramic substrate 12 is arranged substantially in parallel to the metal base member 16.

Abstract: In a metal/ceramic bonding substrate 10 wherein a circuit forming metal plate 14 is bonded to one side of a ceramic substrate 12 and a radiating metal base plate 16 is bonded to the other side thereof, a difference in level is provided along the entire circumference of the bonding surface of the ceramic substrate 12 to the metal base plate 16. The difference in level is provided by forming at least one of a rising portion 16a and a groove portion 116b on and in the metal base plate 16.

Abstract: There is provided a method for producing a metal/ceramic bonding article, the method including the steps of: bonding a metal plate 12 of an alloy containing copper and nickel directly to at least one side of a ceramic substrate 10; applying a resist 14 on a predetermined portion of the metal plate 12 to remove an undesired portion of the metal plate 12 by etching; and removing the resist 14 to form a pattern having a predetermined shape of the alloy on the ceramic substrate 10. According to this method, it is possible to reduce the displacement failure of parts to improve productivity and to prevent bonding failure during the mounting of a semiconductor device or the like thereon.

Abstract: In a ceramic circuit board having a ceramic substrate and a metal circuit plate bonded to one surface of the ceramic substrate, assuming that the warpage of the ceramic circuit board is a difference in height between the center and edge of the metal circuit plate and is positive (+) when the circuit board warps so as to be concave on the side of the metal circuit plate, the warpage of the ceramic circuit board is in the range of from −0.1 mm to +0.3 mm when the ceramic circuit board is heated to 350° C., and in the range of from +0.05 mm to +0.6 mm when the temperature of the ceramic circuit board is returned to a room temperature after the ceramic circuit board is heated to 350° C. The initial warpage of the ceramic circuit board is in the range of from +0.05 mm to +0.6 mm.

Abstract: There is provided a method for producing a metal/ceramic bonding article, the method including the steps of: bonding a metal plate 12 of an alloy containing copper and nickel directly to at least one side of a ceramic substrate 10; applying a resist 14 on a predetermined portion of the metal plate 12 to remove an undesired portion of the metal plate 12 by etching; and removing the resist 14 to form a pattern having a predetermined shape of the alloy on the ceramic substrate 10. According to this method, it is possible to reduce the displacement failure of parts to improve productivity and to prevent bonding failure during the mounting of a semiconductor device or the like thereon.

Abstract: An aluminum plate 12 having a purity of 99.5% or more, preferably 99.9% or more, is caused to contact at least one side of a ceramic substrate 10 of aluminum nitride or alumina to be heated at a temperature of 620 to 650° C. in an inert gas to bond the aluminum plate 12 directly to the ceramic substrate 10.

Abstract: After a metal member of an alloy containing copper and nickel is arranged on at least one side of a ceramic substrate, the metal member and the ceramic substrate are heated in an atmosphere of an inert gas or in vacuo at a temperature between solidus and liquidus lines of the alloy to bond the metal member directly to the ceramic substrate.

Abstract: There is provided a method for producing a metal/ceramic bonding article, the method including the steps of: bonding a metal plate 12 of an alloy containing copper and nickel directly to at least one side of a ceramic substrate 10; applying a resist 14 on a predetermined portion of the metal plate 12 to remove an undesired portion of the metal plate 12 by etching; and removing the resist 14 to form a pattern having a predetermined shape of the alloy on the ceramic substrate 10. According to this method, it is possible to reduce the displacement failure of parts to improve productivity and to prevent bonding failure during the mounting of a semiconductor device or the like thereon.