Abstract: An ozone generator (100) includes: a flow path (1) through which gas flows from an inlet (5) to an outlet (6); an ozone generation unit (3) disposed in the flow path (1); and an ozone sensor (4) disposed in the flow path (1) and upstream of the ozone generation unit (3). The flow path (1) has an upstream-side flow path (130) that forms a gas passing space (AR) located upstream of the ozone generation unit (3) and through which the gas flows from one side to another side in a predetermined direction. The inlet (5) is disposed closer to an outer circumferential portion (131) of the upstream-side flow path (130) than the ozone sensor (4).

Abstract: The present invention is characterized in that, in a non-volatile memory, in response to a write command, it is judged whether or not original data of a write address contains write state data (0, for example), and, in a case where write state data is contained, a write operation of a write command is prohibited. Or the present invention is characterized in that, in a non-volatile memory, in response to a write command, original data of a write address and write data corresponding to the write command are compared, and in a case where bits changing write state data to erased state data are contained, a write operation for this write command is prohibited.

Abstract: An electrically erasable and writable non-volatile semiconductor memory device having a function of collectively erasing a plurality of memory blocks selected as erase object memory blocks is provided. A logic circuit and an output buffer circuit constitute an erase object memory block selection notifying circuit, which outputs an erase object memory block selection notifying signal indicating whether designated memory blocks have been selected as erase object memory blocks or not, in synchronization with an output enable signal supplied from the CPU. Thus, the erasing operation mode period in the non-volatile semiconductor memory device can be shortened.