Patents by Inventor Takayuki Yuasa
Takayuki Yuasa has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20210350793Abstract: A customer service support device includes: an acquisition unit for acquiring customer service information representing a content of a conversation made between a customer and a customer-service-handling-person and representing a state of the customer-service-handling-person; a calculation unit for calculating a similarity level between past case information representing a past case concerning the conversation and the customer service information representing a content of the conversation; a diagnosis unit for diagnosing a state of the customer-service-handling-person, based on diagnosis criterion information serving as a criterion when diagnosing the state of the customer-service-handling-person, and based on the customer service information; and a generation unit for, based on the similarity level calculated by the calculation unit and the state of the customer-service-handling-person diagnosed by the diagnosis unit, generating support necessity information representing a degree of necessity for supportingType: ApplicationFiled: February 18, 2019Publication date: November 11, 2021Applicant: NEC CORPORATIONInventor: Takayuki YUASA
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Publication number: 20200294650Abstract: The purpose of the present disclosure is to provide a computer, an information processing method, and a network system by which information relating to a trend of a mental or physical state of a subject can be acquired more easily than before. Provided is a computer including: a memory configured to store first data obtained from a strand of hair acquired from a subject and second data obtained from a specimen acquired from the subject, the specimen being different in acquisition time from the strand of hair; and a processor configured to generate a trend of a mental or physical state of the subject based on the first data and the second data.Type: ApplicationFiled: December 14, 2016Publication date: September 17, 2020Applicants: SHARP KABUSHIKI KAISHA, SHARP KABUSHIKI KAISHAInventors: MASAYA UEDA, YASUHIRO HARADA, SHUHICHI HIRUKAWA, AZUSA NAKANO, CHIKAAKI KOGURE, MASAYUKI NAKANO, TAKAYUKI YUASA
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Patent number: 10269305Abstract: The present invention provides a mirror display that has improved design aesthetics and makes it possible to sufficiently improve visibility in mirror mode in dark environments. The mirror display according to the present invention includes a half mirror plate having a half mirror layer, a display device, a case, and an auxiliary illumination unit that includes an auxiliary light source. The case supports at least the half mirror plate and the display device and includes an outer frame that covers an edge of a front surface of the half mirror plate when viewed in a plan view from a viewing side. The display device is arranged on a rear side of the half mirror plate. The auxiliary light source is arranged on the rear side of the half mirror plate, the display device, or the outer frame. The auxiliary illumination unit is controlled separately from the display device and emits light towards the viewing side when the mirror display is in mirror mode.Type: GrantFiled: August 29, 2014Date of Patent: April 23, 2019Assignee: SHARP KABUSHIKI KAISHAInventors: Masahiro Hasegawa, Hiroyuki Hakoi, Akira Sakai, Hidefumi Yoshida, Takaharu Kanai, Takako Shimizu, Yuuki Itou, Atsushi Ogawa, Akira Tsuruta, Takayuki Yuasa, Shigeaki Mizushima
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Publication number: 20160343308Abstract: The present invention provides a mirror display that has improved design aesthetics and makes it possible to sufficiently improve visibility in mirror mode in dark environments. The mirror display according to the present invention includes a half mirror plate having a half mirror layer, a display device, a case, and an auxiliary illumination unit that includes an auxiliary light source. The case supports at least the half mirror plate and the display device and includes an outer frame that covers an edge of a front surface of the half mirror plate when viewed in a plan view from a viewing side. The display device is arranged on a rear side of the half mirror plate. The auxiliary light source is arranged on the rear side of the half mirror plate, the display device, or the outer frame. The auxiliary illumination unit is controlled separately from the display device and emits light towards the viewing side when the mirror display is in mirror mode.Type: ApplicationFiled: August 29, 2014Publication date: November 24, 2016Applicant: Sharp Kabushiki KaishaInventors: Masahiro HASEGAWA, Hiroyuki HAKOI, Akira SAKAI, Hidefumi YOSHIDA, Takaharu KANAI, Takako SHIMIZU, Yuuki ITOU, Atsushi OGAWA, Akira TSURUTA, Takayuki YUASA, Shigeaki MIZUSHIMA
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Patent number: 8502238Abstract: A nitride semiconductor laser device with a reduction in internal crystal defects and an alleviation in stress, and a semiconductor optical apparatus comprising this nitride semiconductor laser device. First, a growth suppressing film against GaN crystal growth is formed on the surface of an n-type GaN substrate equipped with alternate stripes of dislocation concentrated regions showing a high density of crystal defects and low-dislocation regions so as to coat the dislocation concentrate regions. Next, the n-type GaN substrate coated with the growth suppressing film is overlaid with a nitride semiconductor layer by the epitaxial growth of GaN crystals. Further, the growth suppressing film is removed to adjust the lateral distance between a laser waveguide region and the closest dislocation concentrated region to 40 ?m or more.Type: GrantFiled: November 28, 2012Date of Patent: August 6, 2013Assignees: Sharp Kabushiki Kaisha, Sumitomo Electric Industries, Ltd.Inventors: Shigetoshi Ito, Takayuki Yuasa, Yoshihiro Ueta, Mototaka Taneya, Zenpei Tani, Kensaku Motoki
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Publication number: 20130114633Abstract: A nitride semiconductor laser device with a reduction in internal crystal defects and an alleviation in stress, and a semiconductor optical apparatus comprising this nitride semiconductor laser device. First, a growth suppressing film against GaN crystal growth is formed on the surface of an n-type GaN substrate equipped with alternate stripes of dislocation concentrated regions showing a high density of crystal defects and low-dislocation regions so as to coat the dislocation concentrate regions. Next, the n-type GaN substrate coated with the growth suppressing film is overlaid with a nitride semiconductor layer by the epitaxial growth of GaN crystals. Further, the growth suppressing film is removed to adjust the lateral distance between a laser waveguide region and the closest dislocation concentrated region to 40 ?m or more.Type: ApplicationFiled: November 28, 2012Publication date: May 9, 2013Inventors: Shigetoshi ITO, Takayuki YUASA, Yoshihiro UETA, Mototaka TANEYA, Zenpei TANI, Kensaku MOTOKI
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Patent number: 8361939Abstract: In a multilayered sintered sliding member, a porous sintered alloy layer comprising 3 to 10 wt. % of an Sn component, 10 to 30 wt. % of an Ni component, 0.5 to 4 wt. % of a P component, 30 to 50 wt. % of an Fe component, 1 to 10 wt. % of a high-speed tool steel component, 1 to 5 wt. % of a graphite component, and 20 to 55 wt. % of a copper component is integrally diffusion-bonded to a backing plate.Type: GrantFiled: July 30, 2008Date of Patent: January 29, 2013Assignees: Caterpillar Japan Ltd., Oiles CorporationInventors: Takayuki Yuasa, Masaya Yorifuji, Tomoyuki Yamane, Shinya Nishimura
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Patent number: 8334544Abstract: A nitride semiconductor laser device with a reduction in internal crystal defects and an alleviation in stress, and a semiconductor optical apparatus comprising this nitride semiconductor laser device. First, a growth suppressing film against GaN crystal growth is formed on the surface of an n-type GaN substrate equipped with alternate stripes of dislocation concentrated regions showing a high density of crystal defects and low-dislocation regions so as to coat the dislocation concentrate regions. Next, the n-type GaN substrate coated with the growth suppressing film is overlaid with a nitride semiconductor layer by the epitaxial growth of GaN crystals. Further, the growth suppressing film is removed to adjust the lateral distance between a laser waveguide region and the closest dislocation concentrated region to 40 ?m or more.Type: GrantFiled: July 14, 2010Date of Patent: December 18, 2012Assignees: Sharp Kabushiki Kaisha, Sumitomo Electric Industries, Ltd.Inventors: Shigetoshi Ito, Takayuki Yuasa, Yoshihiro Ueta, Mototaka Taneya, Zenpei Tani, Kensaku Motoki
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Publication number: 20120234371Abstract: A transparent solar concentrator is provided for converting solar energy into electrical energy. The solar concentrator includes a first light transmissive substrate, a plurality of solar cells for receiving solar energy and converting the solar energy into electrical energy, the plurality of solar cells positioned relative to the first substrate, and a plurality of light redirecting elements arranged in the first light transmissive substrate. Each of the plurality of light redirecting elements is configured to direct light incident on a first side of the first light transmissive substrate to a respective one of the plurality of solar cells on an opposite side of the first light transmissive substrate.Type: ApplicationFiled: March 18, 2011Publication date: September 20, 2012Inventors: Tong Zhang, Martin David Tillin, Takayuki Yuasa
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Patent number: 8029044Abstract: To facilitate the production of a cab in the form of a box by joining side, rear and roof panels to pillars, and to improve the productivity. Pillars forming the cab (2) include composite pillars (16, 18) obtained by juxtaposing and joining together the pairs of pillar members (20, 22), and panel assemblies (4, 6, 8) adjacent to the pillar members (20, 22) are joined to the pillar members (20, 22) of the composite pillars (16, 18).Type: GrantFiled: January 31, 2008Date of Patent: October 4, 2011Assignees: Caterpillar Japan Ltd., Press Kogyo Co., Ltd.Inventors: Eiji Akahane, Takayuki Yuasa, Kazushige Tasaki, Masayoshi Nakajima, Robert D. Clausen, Teruyuki Yamada, Hideo Kosaka, Yusuke Harayama
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Patent number: 7858992Abstract: A nitride semiconductor laser device has a nitride semiconductor substrate that includes a dislocation-concentrated region 102 and a wide low-dislocation region and that has the top surface thereof slanted at an angle in the range of 0.3° to 0.7° relative to the C plane and a nitride semiconductor layer laid on top thereof. The nitride semiconductor layer has a depression immediately above the dislocation-concentrated region, and has, in a region thereof other than the depression, a high-quality quantum well active layer with good flatness and without cracks, a layer that, as is grown, readily exhibits p-type conductivity, and a stripe-shaped laser light waveguide region. The laser light waveguide region is formed above the low-dislocation region. This helps realize a nitride semiconductor laser device that offers a longer life.Type: GrantFiled: February 5, 2009Date of Patent: December 28, 2010Assignees: Sharp Kabushiki Kaisha, Sumitomo Electric Industries, Ltd.Inventors: Yoshihiro Ueta, Teruyoshi Takakura, Takeshi Kamikawa, Yuhzoh Tsuda, Shigetoshi Ito, Takayuki Yuasa, Mototaka Taneya, Kensaku Motoki
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Publication number: 20100278205Abstract: A nitride semiconductor laser device with a reduction in internal crystal defects and an alleviation in stress, and a semiconductor optical apparatus comprising this nitride semiconductor laser device. First, a growth suppressing film against GaN crystal growth is formed on the surface of an n-type GaN substrate equipped with alternate stripes of dislocation concentrated regions showing a high density of crystal defects and low-dislocation regions so as to coat the dislocation concentrate regions. Next, the n-type GaN substrate coated with the growth suppressing film is overlaid with a nitride semiconductor layer by the epitaxial growth of GaN crystals. Further, the growth suppressing film is removed to adjust the lateral distance between a laser waveguide region and the closest dislocation concentrated region to 40 ?m or more.Type: ApplicationFiled: July 14, 2010Publication date: November 4, 2010Applicants: SHARP KABUSHIKI KAISHA, SUMITOMO ELECTRIC INDUSTRIES, LTD.Inventors: Shigetoshi ITO, Takayuki YUASA, Yoshihiro UETA, Mototaka TANEYA, Zenpei TANI, Kensaku MOTOKI
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Patent number: 7781244Abstract: A nitride semiconductor laser device with a reduction in internal crystal defects and an alleviation in stress, and a semiconductor optical apparatus comprising this nitride semiconductor laser device. First, a growth suppressing film against GaN crystal growth is formed on the surface of an n-type GaN substrate equipped with alternate stripes of dislocation concentrated regions showing a high density of crystal defects and low-dislocation regions so as to coat the dislocation concentrate regions. Next, the n-type GaN substrate coated with the growth suppressing film is overlaid with a nitride semiconductor layer by the epitaxial growth of GaN crystals. Further, the growth suppressing film is removed to adjust the lateral distance between a laser waveguide region and the closest dislocation concentrated region to 40 ?m or more.Type: GrantFiled: September 16, 2008Date of Patent: August 24, 2010Assignees: Sharp Kabushiki Kaisha, Sumitomo Electric Industries, Ltd.Inventors: Shigetoshi Ito, Takayuki Yuasa, Yoshihiro Ueta, Mototaka Taneya, Zenpei Tani, Kensaku Motoki
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Publication number: 20100197534Abstract: In a multilayered sintered sliding member, a porous sintered alloy layer comprising 3 to 10 wt. % of an Sn component, 10 to 30 wt. % of an Ni component, 0.5 to 4 wt. % of a P component, 30 to 50 wt. % of an Fe component, 1 to 10 wt. % of a high-speed tool steel component, 1 to 5 wt. % of a graphite component, and 20 to 55 wt. % of a copper component is integrally diffusion-bonded to a backing plate.Type: ApplicationFiled: July 30, 2008Publication date: August 5, 2010Inventors: Takayuki Yuasa, Masaya Yorifuji, Tomoyuki Yamane, Shinya Nishimura
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Publication number: 20100117399Abstract: To facilitate the production of a cab in the form of a box by joining side, rear and roof panels to pillars, and to improve the productivity. Pillars forming the cab (2) include composite pillars (16, 18) obtained by juxtaposing and joining together the pairs of pillar members (20, 22), and panel assemblies (4, 6, 8) adjacent to the pillar members (20, 22) are joined to the pillar members (20, 22) of the composite pillars (16, 18).Type: ApplicationFiled: January 31, 2008Publication date: May 13, 2010Inventors: Eiji Akahane, Takayuki Yuasa, Kazushige Tasaki, Masayoshi Nakajima, Robert D. Clausen, Teruyuki Yamada, Hideo Kosaka, Yusuke Harayama
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Patent number: 7663158Abstract: A nitride compound semiconductor light emitting device includes: a GaN substrate having a crystal orientation which is tilted away from a <0001> direction by an angle which is equal to or greater than about 0.05° and which is equal to or less than about 2°, and a semiconductor multilayer structure formed on the GaN substrate, wherein the semiconductor multilayer structure includes: an acceptor doping layer containing a nitride compound semiconductor; and an active layer including a light emitting region.Type: GrantFiled: November 16, 2007Date of Patent: February 16, 2010Assignee: Sharp Kabushiki KaishaInventors: Yoshihiro Ueta, Takayuki Yuasa, Atsushi Ogawa, Yuhzoh Tsuda, Masahiro Araki
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Publication number: 20090236585Abstract: A nitride semiconductor laser device has a nitride semiconductor substrate that includes a dislocation-concentrated region 102 and a wide low-dislocation region and that has the top surface thereof slanted at an angle in the range of 0.3° to 0.7° relative to the C plane and a nitride semiconductor layer laid on top thereof. The nitride semiconductor layer has a depression immediately above the dislocation-concentrated region, and has, in a region thereof other than the depression, a high-quality quantum well active layer with good flatness and without cracks, a layer that, as is grown, readily exhibits p-type conductivity, and a stripe-shaped laser light waveguide region. The laser light waveguide region is formed above the low-dislocation region. This helps realize a nitride semiconductor laser device that offers a longer life.Type: ApplicationFiled: February 5, 2009Publication date: September 24, 2009Applicants: Sharp Kabushiki Kaisha, Sumitomo Electric Industries, Ltd.Inventors: Yoshihiro Ueta, Teruyoshi Takakura, Takeshi Kamikawa, Yuhzoh Tsuda, Shigetoshi Ito, Takayuki Yuasa, Mototaka Taneya, Kensaku Motoki
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Patent number: 7579627Abstract: A nitride semiconductor laser device has a nitride semiconductor substrate that includes a dislocation-concentrated region 102 and a wide low-dislocation region and that has the top surface thereof slanted at an angle in the range of 0.3° to 0.7° relative to the C plane and a nitride semiconductor layer laid on top thereof. The nitride semiconductor layer has a depression immediately above the dislocation-concentrated region, and has, in a region thereof other than the depression, a high-quality quantum well active layer with good flatness and without cracks, a layer that, as is grown, readily exhibits p-type conductivity, and a stripe-shaped laser light waveguide region. The laser light waveguide region is formed above the low-dislocation region. This helps realize a nitride semiconductor laser device that offers a longer life.Type: GrantFiled: May 18, 2006Date of Patent: August 25, 2009Assignees: Sharp Kabushiki Kaisha, Sumitomo Electric Industries, Ltd.Inventors: Yoshihiro Ueta, Teruyoshi Takakura, Takeshi Kamikawa, Yuhzoh Tsuda, Shigetoshi Ito, Takayuki Yuasa, Mototaka Taneya, Kensaku Motoki
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Patent number: 7498608Abstract: A nitride semiconductor laser device with a reduction in internal crystal defects and an alleviation in stress, and a semiconductor optical apparatus comprising this nitride semiconductor laser device. First, a growth suppressing film against GaN crystal growth is formed on the surface of an n-type GaN substrate equipped with alternate stripes of dislocation concentrated regions showing a high density of crystal defects and low-dislocation regions so as to coat the dislocation concentrate regions. Next, the n-type GaN substrate coated with the growth suppressing film is overlaid with a nitride semiconductor layer by the epitaxial growth of GaN crystals. Further, the growth suppressing film is removed to adjust the lateral distance between a laser waveguide region and the closest dislocation concentrated region to 40 ?m or more.Type: GrantFiled: October 28, 2002Date of Patent: March 3, 2009Assignees: Sharp Kabushiki Kaisha, Sumitomo Electric Industries, Ltd.Inventors: Shigetoshi Ito, Takayuki Yuasa, Yoshihiro Ueta, Mototaka Taneya, Zenpei Tani, Kensaku Motoki
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Publication number: 20090011530Abstract: A nitride semiconductor laser device with a reduction in internal crystal defects and an alleviation in stress, and a semiconductor optical apparatus comprising this nitride semiconductor laser device. First, a growth suppressing film against GaN crystal growth is formed on the surface of an n-type GaN substrate equipped with alternate stripes of dislocation concentrated regions showing a high density of crystal defects and low-dislocation regions so as to coat the dislocation concentrate regions. Next, the n-type GaN substrate coated with the growth suppressing film is overlaid with a nitride semiconductor layer by the epitaxial growth of GaN crystals. Further, the growth suppressing film is removed to adjust the lateral distance between a laser waveguide region and the closest dislocation concentrated region to 40 ?m or more.Type: ApplicationFiled: September 16, 2008Publication date: January 8, 2009Applicants: SHARP KABUSHIKI KAISHA, SUMITOMO ELECTRIC INDUSTRIES, LTD.Inventors: Shigetoshi ITO, Takayuki Yuasa, Yoshihiro Ueta, Mototaka Taneya, Zenpei Tani, Kensaku Motoki