Abstract: A light-emitting device formed by easily mounting a light-emitting element onto a supporting base and a method of manufacturing the light-emitting device are provided. A light-emitting device includes: a supporting base including a depression section on a top surface thereof, the depression section having an inclined surface on a side wall thereof; a first light-emitting element arranged on a bottom surface of the depression section; and a second light-emitting element arranged on the first light-emitting element and the supporting base.

Abstract: A semiconductor light emitting device made of nitride III-V compound semiconductors including an active layer made of a first nitride III-V compound semiconductor containing In and Ga, such as InGaN; an intermediate layer made of a second nitride III-V compound semiconductor containing In and Ga and different from the first nitride III-V compound semiconductor, such as InGaN; and a cap layer made of a third nitride III-V compound semiconductor containing Al and Ga, such as p-type AlGaN, which are deposited in sequential contact.

Abstract: A semiconductor light emitting device made of nitride III-V compound semiconductors including an active layer made of a first nitride III-V compound semiconductor containing In and Ga, such as InGaN; an intermediate layer made of a second nitride III-V compound semiconductor containing In and Ga and different from the first nitride III-V compound semiconductor, such as InGaN; and a cap layer made of a third nitride III-V compound semiconductor containing Al and Ga, such as p-type AlGaN, which are deposited in sequential contact.

Abstract: A method of manufacturing a semiconductor light emitting device made of nitride III-V compound semiconductors is includes an active layer made of a first nitride III-V compound semiconductor containing In and Ga, such as InGaN; an intermediate layer made of a second nitride III-V compound semiconductor containing In and Ga and different from the first nitride III-V compound semiconductor, such as InGaN; and a cap layer made of a third nitride III-V compound semiconductor containing Al and Ga, such as p-type AlGaN, which are deposited in sequential contact.

Abstract: A method of manufacturing a semiconductor light emitting device made of nitride III-V compound semiconductors is includes an active layer made of a first nitride III-V compound semiconductor containing In and Ga, such as InGaN; an intermediate layer made of a second nitride III-V compound semiconductor containing In and Ga and different from the first nitride III-V compound semiconductor, such as InGaN; and a cap layer made of a third nitride III-V compound semiconductor containing Al and Ga, such as p-type AlGaN, which are deposited in sequential contact.

Abstract: A semiconductor light emitting device made of nitride III-V compound semiconductors is includes an active layer made of a first nitride III-V compound semiconductor containing In and Ga, such as InGaN; an intermediate layer made of a second nitride III-V compound semiconductor containing In and Ga and different from the first nitride III-V compound semiconductor, such as InGaN; and a cap layer made of a third nitride III-V compound semiconductor containing Al and Ga, such as p-type AlGaN, which are deposited in sequential contact.

Abstract: A laser diode capable of being easily mounted, and a laser diode device in which the laser diode is mounted are provided. A hole is disposed in a semiconductor layer, and a p-type electrode and an n-type semiconductor layer are electrically connected to each other by a bottom portion (a connecting portion) of the hole. Thereby, the p-type electrode has the same potential as the n-type semiconductor layer, and a saturable absorption region is formed in a region corresponding to a current path. Light generated in a gain region (not shown) is absorbed in the saturable absorption region to be converted into a current. The current is discharged to a ground via the p-side electrode and the bottom portion, and an interaction between the saturable absorption region and the gain region is initiated, thereby self-oscillation can be produced.

Abstract: A light-emitting device formed by easily mounting a light-emitting element onto a supporting base and a method of manufacturing the light-emitting device are provided. A light-emitting device includes: a supporting base including a depression section on a top surface thereof, the depression section having an inclined surface on a side wall thereof; a first light-emitting element arranged on a bottom surface of the depression section; and a second light-emitting element arranged on the first light-emitting element and the supporting base.

Abstract: A laser diode which can be easily assembled at low material cost is provided. A first light emitting device having a laser structure on a substrate, a second light emitting device having laser structures on a substrate, and a support base are provided. The first light emitting device and the second light emitting device are layered in this order on the support base in a manner that the respective laser structures of the first light emitting device and the second light emitting device are opposed to each other. A substrate side of the first light emitting device and a laser structure side of the second light emitting device are electrically connected to the support base.

Abstract: The present invention is directed to a method for diagnosing large intestinal cancer and/or polyp and a method for observing postoperative course or monitoring recurrence thereof, wherein each method includes detecting cystatin SN protein by use of an anti-cystatin SN antibody. The present invention is able to provide a kit for assaying cystatin SN, which can be used, in a simple manner, in a diagnosis performed prior to conventional barium enema examination and endoscopic examination which impose burdens on patients; as an indicator of metastasis and recurrence; and in the evaluation of therapeutic effects. The present invention provides a method for diagnosing or monitoring large intestinal cancer and/or polyp which can be performed in a simple manner, and thus can allow to design a new regimen rapidly.

Abstract: A semiconductor light emitting device made of nitride III-V compound semiconductors includes an active layer made of a first nitride III-V compound semiconductor containing In and Ga, such as InGaN; an intermediate layer made of a second nitride III-V compound semiconductor containing In and Ga and different from the first nitride III-V compound semiconductor, such as InGaN; and a cap layer made of a third nitride III-V compound semiconductor containing Al and Ga, such as p-type AlGaN, which are deposited in sequential contact.

Abstract: A semiconductor light emitting device made of nitride III-V compound semiconductors is includes an active layer made of a first nitride III-V compound semiconductor containing In and Ga, such as InGaN; an intermediate layer made of a second nitride III-V compound semiconductor containing In and Ga and different from the first nitride III-V compound semiconductor, such as InGaN; and a cap layer made of a third nitride III-V compound semiconductor containing Al and Ga, such as p-type AlGaN, which are deposited in sequential contact.

Abstract: A semiconductor light emitting device made of nitride III-V compound semiconductors includes an active layer made of a first nitride III-V compound semiconductor containing In and Ga, such as InGaN; an intermediate layer made of a second nitride III-V compound semiconductor containing In and Ga and different from the first nitride III-V compound semiconductor, such as InGaN; and a cap layer made of a third nitride III-V compound semiconductor containing Al and Ga, such as p-type AlGaN, which are deposited in sequential contact.

Abstract: Provided is a nitride semiconductor having a larger low-defective region on a surface thereof, a semiconductor device using the nitride semiconductor, a method of manufacturing a nitride semiconductor capable of easily reducing surface defects in a step of forming a layer through lateral growth, and a method of manufacturing a semiconductor device manufactured by the use of the nitride semiconductor. A seed crystal portion is formed into stripes on a substrate with a buffer layer sandwiched therebetween. Then, a crystal is grown from the seed crystal portion in two steps of growth conditions to form a nitride semiconductor layer. In a first step, a low temperature growth portion having a trapezoidal-shaped cross section in a layer thickness direction is formed at a growth temperature of 1030° C., and in a second step, lateral growth predominantly takes place at a growth temperature of 1070° C. Then, a high temperature growth potion is formed between the low temperature growth portions.

Abstract: A laser diode capable of being easily mounted, and a laser diode device in which the laser diode is mounted are provided. A hole is disposed in a semiconductor layer, and a p-type electrode and an n-type semiconductor layer are electrically connected to each other by a bottom portion (a connecting portion) of the hole. Thereby, the p-type electrode has the same potential as the n-type semiconductor layer, and a saturable absorption region is formed in a region corresponding to a current path. Light generated in a gain region (not shown) is abosorbed in the saturable absorption region to be converted into a current. The current is discharged to a ground via the p-side electrode and the bottom portion, and an interaction between the saturable absorption region and the gain region is intitiated, thereby self-oscillation can be produced.

Abstract: A laser diode which can be easily assembled at low material cost is provided. A first light emitting device having a laser structure on a substrate, a second light emitting device having laser structures on a substrate, and a support base are provided. The first light emitting device and the second light emitting device are layered in this order on the support base in a manner that the respective laser structures of the first light emitting device and the second light emitting device are opposed to each other. A substrate side of the first light emitting device and a laser structure side of the second light emitting device are electrically connected to the support base.

Abstract: A semiconductor light emitting device made of nitride III-V compound semiconductors includes an active layer made of a first nitride III-V compound semiconductor containing In and Ga, such as InGaN; an intermediate layer made of a second nitride III-V compound semiconductor containing In and Ga and different from the first nitride III-V compound semiconductor, such as InGaN; and a cap layer made of a third nitride III-V compound semiconductor containing Al and Ga, such as p-type AlGaN, which are deposited in sequential contact.

Abstract: In a semiconductor light emitting device such as a semiconductor laser using nitride III-V compound semiconductors and having a structure interposing an active layer between an n-side cladding layer and a p-side cladding layer, the p-side cladding layer is made of an undoped or n-type first layer 9 and a p-type second layer 12 that are deposited sequentially from nearer to remoter from the active layer. The first layer 9 is not thinner than 50 nm. The p-type second layer 12 includes a p-type third layer having a larger band gap inserted therein as an electron blocking layer. Thus the semiconductor light emitting device is reduced in operation voltage while keeping a thickness of the p-side cladding layer necessary for ensuring favorable optical properties.

Abstract: When GaN or other nitride III-V compound semiconductor layers are grown on a substrate such as a sapphire substrate, thickness x of the substrate relative to thickness y of the nitride III-V compound semiconductor layers is controlled to satisfy 0<y/x?0.011 and x?450 ?m. Alternatively, if the maximum dimension of the substrate is D (cm), its warpage H is in the range of 0<H?70×10?4 (cm), and Z=y/x, D is controlled to satisfy the relation 0<D<(2/CZ)cos?1(1?HCZ), where C (cm?1) is the proportionality constant when the radius of curvature of the substrate ? (cm) is expressed as 1/?=CZ.

Abstract: Provided is a method of manufacturing a semiconductor device, which is adapted to prevent the deposition of a material on a laser light emitting edge, thereby enabling an improvement in longevity characteristics of a laser. A base having a laser chip mounted thereon is irradiated with an energy beam having a shorter wavelength than an oscillation wavelength of the laser chip. Photolysis and oxidation caused by the energy beam cause the removal of an adherent from the overall base or the deterioration thereof, and incidentally, the adherent is derived from an adhesive sheet used to attach the laser chip to the base, or the like. Preferably, laser light or ultraviolet light, for example, is used as the energy beam. Alternatively, the base having the laser chip mounted thereon may be irradiated with plasma so as to remove the adherent utilizing an ion cleaning effect of the plasma. After irradiation, a top is mounted to the base so as to shut off the laser chip from the outside.