Abstract: A target processing method includes: importing a target into a processing chamber; forming a film including carbon on the target using at least one of first ion including carbon and a first plasma including carbon; and removing the film by a reaction between a second plasma and the film, wherein the forming of the film and the removing of the film are alternately performed a number of times in the processing chamber without removing the target from the processing chamber.

Abstract: A method of manufacturing a template, has: preparing a substrate containing quartz and having a surface, the surface including a protrusion and a depression; and processing the depression. The processing of the depression includes: a first step of forming a film on the surface, the film including a first region and a second region, the first region being provided on the protrusion, and the second region being provided on a bottom of the depression and being thinner than the first region; a second step of removing the second region with the first region partly remaining to expose the bottom of the depression; and a third step of processing the exposed part of the depression using a mask made of the remainder of the first region.

Abstract: A method for processing a substrate includes forming a pattern on a substrate, supplying water to cover the pattern, and after the supplying the water, irradiating the pattern with light having a wavelength longer that which causes dissociation of water. A substrate processing apparatus of an embodiment includes a transfer chamber to receive a patterned substrate, a water supplying chamber to cover the pattern with water, and an irradiating chamber to irradiate a portion of the pattern with near-field light.

Abstract: An example of an etching method according to the present disclosure, includes: performing a first process which includes forming a first layer containing halogen or holding the substrate in a gas atmosphere containing halogen; and performing a second process which includes removing a portion of the first layer and a portion of the substrate under the portion of the first layer by supplying the portion of the first layer with ions sourced from a solid material.

Abstract: A template according to the present embodiment includes a substrate, a light transmissive film, and a plurality of convex parts. The substrate has a first surface. The light transmissive film is provided on the first surface, has a second surface on a side opposite to the substrate, and has a composition different from the composition of the substrate. The plurality of convex parts are provided on the second surface and have different heights.

Abstract: According to one embodiment, a plasma treatment apparatus includes a first chamber, an electrode provided in the first chamber and having a surface, and a conveyance mechanism that places a carrier structure holding a treatment target in the first chamber such that a ferromagnetic body of the carrier structure is disposed between the surface of the electrode and the treatment target. The ferromagnetic body has a single polarity within a plane substantially parallel to the surface of the electrode.

Abstract: According to one embodiment, a pattern forming method includes forming a resist film including a first core material pattern and a second core material pattern, on a first film laminated on a substrate; forming a second film at least on sidewalls of the first and second core material patterns; removing the first core material pattern while not removing the second core material pattern and the second film; and processing the first film by using, as a mask, the second core material pattern and the second film.

Abstract: A template according to an embodiment includes a substrate and a first layer. The substrate includes a first face having a pattern, and contains a first element. The first layer is in contact with the first face, and contains a compound having the first element and a second element different from the first element, the density of the compound in the first layer being higher than the density of the compound in the substrate.

Abstract: According to one embodiment, a pattern formation method includes patterning a first film on a substate to have a plurality of lines extending in a first direction and a second pattern portion extending in a second direction intersecting the first direction. Each line having at least a first width and being spaced from an adjacent line in the second direction by a least three times the first width and spaced from ends of the lines in the first direction by twice or less the first width. A conformal film is then formed on the patterned first film. The conformal film having a thickness equal to the first width. The patterned first film is then removed while leaving portions of the conformal film that were previously on sidewalls of the plurality of lines behind.

Abstract: A method of manufacturing a template, has: preparing a substrate containing quartz and having a surface, the surface including a protrusion and a depression; and processing the depression. The processing of the depression includes: a first step of forming a film on the surface, the film including a first region and a second region, the first region being provided on the protrusion, and the second region being provided on a bottom of the depression and being thinner than the first region; a second step of removing the second region with the first region partly remaining to expose the bottom of the depression; and a third step of processing the exposed part of the depression using a mask made of the remainder of the first region.

Abstract: According to one embodiment, a processing apparatus includes a chamber, a first gas introduction port that introduces a first gas into the chamber, a first gas discharge port that discharges the first gas from the chamber, and a stage that supports a processing object in the chamber. The processing apparatus has a plasma generating section with an electrode to generate a plasma in the chamber. The processing apparatus includes a shield at a first position that is between the plasma generating section and the stage. The shield is light transmissive, but blocks radicals and ions generated with plasma. In some examples, the shield may be moveable from the first position to another position that is not between the plasma generating section and the stage.

Abstract: According to one embodiment, a pattern forming method includes forming a resist film including a first core material pattern and a second core material pattern, on a first film laminated on a substrate; forming a second film at least on sidewalls of the first and second core material patterns; removing the first core material pattern while not removing the second core material pattern and the second film; and processing the first film by using, as a mask, the second core material pattern and the second film.

Abstract: A method for processing a substrate includes forming a pattern on a substrate, supplying water to cover the pattern, and after the supplying the water, irradiating the pattern with light having a wavelength longer that which causes dissociation of water. A substrate processing apparatus of an embodiment includes a transfer chamber to receive a patterned substrate, a water supplying chamber to cover the pattern with water, and an irradiating chamber to irradiate a portion of the pattern with near-field light.

Abstract: A pattern-forming method includes forming a first film above a material to be processed, processing the first film into a pattern to be formed in the material to be processed, providing a second film on the first film and the material to be processed, supplying a precursor containing at least one of a metal material or a semiconductor material to the second film, removing the first film, and processing the material to be processed using the second film impregnated with at least one of the metal material and the semiconductor material, as a mask.

Abstract: A pattern-forming method includes forming a first film above a material to be processed, processing the first film into a pattern to be formed in the material to be processed, providing a second film on the first film and the material to be processed, supplying a precursor containing at least one of a metal material or a semiconductor material to the second film, removing the first film, and processing the material to be processed using the second film impregnated with at least one of the metal material and the semiconductor material, as a mask.

Abstract: According to one embodiment, a plasma processing apparatus includes: a processing chamber; a decompression section configured to decompress inside of the processing chamber; a member including a control section to be inserted into a depression provided on mounting side of a workpiece, the control section being configured to thereby control at least one of in-plane distribution of capacitance of a region including the workpiece and in-plane distribution of temperature of the workpiece; a mounting section provided inside the processing chamber; a plasma generating section configured to supply electromagnetic energy to a region for generating a plasma for performing plasma processing on the workpiece; and a gas supply section configured to supply a process gas to the region for generating a plasma. The control section performs control so that at least one of the in-plane distribution of capacitance and the in-plane distribution of temperature is made uniform.

Abstract: A phase separation observation method according to one embodiment includes determining a progress degree of phase separation of a self-assembly material layer. The progress degree is determined based on the birefringence amount of an observation object. The observation object includes a substrate, and a self-assembly material layer formed on the substrate.

Abstract: A patterning method according to one embodiment includes forming a ground layer on a processing target layer. The ground layer has higher affinity for one of a first segment and a second segment contained in a self-assembly material than for the other segment. The neutral layer is patterned on the ground layer. The neutral layer is neutral to the first segment and the second segment. Exposing surfaces of the ground layer and the neutral layer is irradiated with an energy ray. The self-assembly material is applied onto the ground layer and the neutral layer. The self-assembly material is phase-separated into a first domain including the first segment and a second domain including the second segment. One of the first domain and the second domain is selectively removed.

Abstract: According to one embodiment, a method is disclosed for manufacturing a reflective mask. The method can include forming a reflection layer on a major surface of a substrate. The method can include forming an absorption layer on the reflection layer. The method can include forming a pattern region in the absorption layer. In addition, the method can include forming a light blocking region surrounding the pattern region in the absorption layer and the reflection layer. The forming the light blocking region includes etching-processing the reflection layer using a gas containing chlorine and oxygen.

Abstract: A multi-processing apparatus includes an electron beam irradiation unit, a dry etching unit and a transfer unit. The transfer unit is connected to the electron beam irradiation unit and the dry etching unit, and is configured to transfer a wafer under a reduced-pressure atmosphere from the electron beam irradiation unit to the dry etching unit.