Abstract: Provided is a light absorption anisotropic film capable of preparing an image display device having excellent display performance and excellent durability, and a laminate and an image display device formed of the light absorption anisotropic film. The light absorption anisotropic film is used for an image display device, which is formed of a liquid crystal composition containing a liquid crystal compound and a dichroic substance, in which in a signal derived from the dichroic substance detected by time-of-flight secondary ion mass spectrometry, a relationship between a maximum intensity Imax of the light absorption anisotropic film in a thickness direction and an intensity Isur1 in a surface of the light absorption anisotropic film on a viewing side of the image display device satisfies Expression (I-1) 2.0?Imax/Isur1.

Abstract: A pattern variably displaying device includes: sphere reels, in which patterns are described on a surface of a sphere; a sphere driving device, driving each of the sphere reels; and a reel control part, controlling the sphere driving device.

Abstract: According to one embodiment, a processing device causes a display of a first object at a position separated from a fastening location of a screw. The first object is virtual and indicates the fastening location. The processing device associates first data and second data when a prescribed physical object contacts the first object and the first data is received from a tool turning the screw. The second data is related to the fastening location.

Abstract: According to one embodiment, a production management device acquires a first short-term plan generated based on a first long-term plan. The first long-term plan is of a plan of production in a prescribed period. The first short-term plan is of a plan of production in a first period. The device acquires first progress data of a progress in a task, and acquires first prediction data by using the first progress data. The first prediction data is of a prediction of a progress in the task. The device revises the first short-term plan based on the first prediction data, and acquires second prediction data by using second progress data. The second progress data is of a progress in the task. The second prediction data is of a prediction of a progress of the production in the prescribed period. The device generates a second long-term plan in the prescribed period.

Abstract: According to one embodiment, a processing system estimates a pose of a worker, a position of an article, an orientation of the article, and a state of the article based on an image of the worker and the article. The processing system further estimates a work spot of the worker on the article based on an estimation result of the pose, an estimation result of the position, and an estimation result of the orientation. The processing system further estimates a task performed by the worker based on an estimation result of the work spot and an estimation result of the state.

Abstract: According to one embodiment, an analysis device performs an analysis related to a plurality of tasks of a manufacturing process. The analysis device receives an image when each of the plurality of tasks is performed. The analysis device receives the images from an imaging device acquiring the images. The analysis device receives a detection signal from a tool used in at least one of the plurality of tasks. The detection signal is detected by the tool. The analysis device refers to end determination data for determining an end of each of the plurality of tasks. The analysis device determines the end of each of the plurality of tasks based on the images, the detection signal, and the end determination data.

Abstract: A semiconductor device includes a semiconductor substrate having an active region in which a main switching element structure is formed, a current sense region in which a sense switching element structure is formed, and a peripheral region located around the active region and the current sense region. The semiconductor substrate is a 4H-SiC substrate having an off angle in a <11-20>direction. The current sense region is disposed in a range where the active region is not present when viewed along the <1-100>direction.

Abstract: An elevator device includes a guide rail (1), a car (3), and a guide device (4). The car (3) is movable in a horizontal direction at a specific height. The guide device (4) includes a supporting member (11) and a guide member (12). The guide member (12) is displaceable to a first position for restricting movement of the car (3) in the horizontal direction and guiding up-down movement of the car (3) and a second position where the guide member (12) does not come into contact with the guide rail (1) when the car (3) moves in the horizontal direction.

Abstract: In a semiconductor device, a source region is made of an epitaxial layer so as to reduce variation in thickness of a base region and variation in a threshold value. Outside of a cell part, a side surface of a gate trench is inclined relative to a normal direction to a main surface of a substrate, as compared with a side surface of a gate trench in the cell part that is provided by the epitaxial layer of the source region being in contact with the base region.

Abstract: A semiconductor device includes a semiconductor element having a substrate, a drift layer, a base region, a source region, trench gate structures, an interlayer insulating film, a source electrode, and a drain electrode. The substrate is made of silicon carbide. The drift layer is disposed on the substrate and has an impurity concentration lower than the substrate. The base region is made of silicon carbide and disposed on the drift layer. The source region is made of silicon carbide having an impurity concentration higher than the drift layer. Each trench gate structure has a gate trench, a gate insulating film, and a gate electrode. The interlayer insulating film covers the gate electrode and the gate insulating film. The source electrode is in ohmic-contact with the source region. The drain electrode is disposed on a rear surface of the substrate.

Abstract: A stage includes: a substrate mounting member having a mounting surface on which a target substrate is mounted; a support member configured to support the substrate mounting member; a refrigerant flow path formed inside the support member along the mounting surface, and including a ceiling surface disposed on the mounting surface side, a bottom surface opposite to the ceiling surface, and an introduction port for introducing a refrigerant formed on the bottom surface; and a heat insulating member including at least a first planar portion covering a portion of the ceiling surface, which faces the introduction port, and a second planar portion covering an inner side surface of a curved portion of the refrigerant flow path.

Abstract: In a semiconductor device, a semiconductor element is formed in a semiconductor, an interlayer insulating film having a contact hole and containing at least one of phosphorus and boron is disposed above the semiconductor, a metal electrode is disposed above the interlayer insulating film and is connected to the semiconductor element through the contact hole, and the interlayer insulating film is filled with hydrogen.

Abstract: A semiconductor manufacturing device includes a stage, a plurality of pins, and a driving unit. The stage includes a mounting surface. The mounting surface has a first region for mounting thereon a substrate, and a second region for mounting thereon a focus ring. The second region is provided to surround the first region. A plurality of holes is formed in the stage. The holes extend in a direction that intersects the mounting surface while passing through the boundary between the first region and the second region. The pins are provided in the respective holes. Each of the pins has a first and a second upper end surface. The second upper end surface is provided above the first upper end surface, and is offset towards the first region with respect to the first upper end surface. The driving unit moves the pins up and down in the aforementioned direction.

Abstract: In a semiconductor device, a semiconductor element is formed in a semiconductor, an interlayer insulating film having a contact hole and containing at least one of phosphorus and boron is disposed above the semiconductor, a metal electrode is disposed above the interlayer insulating film and is connected to the semiconductor element through the contact hole, and the interlayer insulating film is filled with hydrogen.

Abstract: A transfer apparatus transfers an object to be transferred onto a case. The transfer apparatus includes a transfer arm, an arm shaft, a plurality of electromagnets, and a control unit. The transfer arm has a pick unit on a front end thereof and extends and retracts in a horizontal direction. The object to be transferred is held on the pick unit. The arm shaft supports the transfer arm. The plurality of electromagnets apply an force in upward direction to the transfer arm by generating a magnetic field in the case. The control unit controls the plurality of electromagnets in such a manner that when the transfer arm extends and retracts in the horizontal direction, the force in upward direction applied to the transfer arm increases as a length from the arm shaft to the front end of the transfer arm increases.

Abstract: A semiconductor manufacturing device includes a stage, a plurality of pins, and a driving unit. The stage includes a mounting surface. The mounting surface has a first region for mounting thereon a substrate, and a second region for mounting thereon a focus ring. The second region is provided to surround the first region. A plurality of holes is formed in the stage. The holes extend in a direction that intersects the mounting surface while passing through the boundary between the first region and the second region. The pins are provided in the respective holes. Each of the pins has a first and a second upper end surface. The second upper end surface is provided above the first upper end surface, and is offset towards the first region with respect to the first upper end surface. The driving unit moves the pins up and down in the aforementioned direction.

Abstract: A method of manufacturing a substrate includes applying solder resist ink containing a mixing resin of epoxy-based resin and acrylic-based resin on at least one surface of a substrate body to form a solder resist layer, and irradiating a predetermined portion of the solder resist layer with ultraviolet rays and controlling an amount of irradiation of the ultraviolet rays irradiated to the predetermined of the solder resist layer to form the predetermined portion in transmissivity that transmits light.

Abstract: A semiconductor manufacturing device includes a stage, a plurality of pins, and a driving unit. The stage includes a mounting surface. The mounting surface has a first region for mounting thereon a substrate, and a second region for mounting thereon a focus ring. The second region is provided to surround the first region. A plurality of holes is formed in the stage. The holes extend in a direction that intersects the mounting surface while passing through the boundary between the first region and the second region. The pins are provided in the respective holes. Each of the pins has a first and a second upper end surface. The second upper end surface is provided above the first upper end surface, and is offset towards the first region with respect to the first upper end surface. The driving unit moves the pins up and down in the aforementioned direction.

Abstract: An IGBT manufacturing method is provided. The IGBT has an n-type emitter region, a p-type top body region, an n-type intermediate region, a p-type bottom body region, an n-type drift region, a p-type collector region, trenches penetrating the emitter region, the top body region, the intermediate region and the bottom body region from an upper surface of a semiconductor substrate and reaching the drift region, and gate electrodes formed in the trenches. The method includes forming the trenches on the upper surface of the semiconductor substrate, forming the insulating film in the trenches, forming an electrode layer on the semiconductor substrate and in the trenches after forming the insulating film, planarizing an upper surface of the electrode layer, and implanting n-type impurities to a depth of the intermediate region from the upper surface side of the semiconductor substrate after planarizing the upper surface of the electrode layer.

Abstract: Transient liquid phase compositions and bonding assemblies are disclosed. In one embodiment, a transient liquid phase composition includes a plurality of particles. Each particle includes a core, an inner shell surrounding the core, the inner shell, and an outer shell surrounding the inner shell. The core is made of a first high melting temperature material, the inner shell is made of a second high melting temperature material, and the outer shell is made of a low melting temperature material. The melting temperature of the low melting temperature material is less than the melting temperature of both the first and second high melting temperature materials.