Abstract: A method for manufacturing a semiconductor device includes: forming a first film on a substrate; forming a second film containing at least carbon on the first film; forming a hole in the second film; and forming a recess, which communicates with the hole, in the first film by etching using the second film as a mask. In this method, the second film includes a first layer formed on the first film, and a second layer formed on the first layer. The first layer having a higher oxygen concentration than the second layer.

Abstract: According to one embodiment, a method of manufacturing a semiconductor device includes forming a first film on a substrate. The method further includes forming a second film on the first film. The method further includes forming a recess in the first film using the second film as a mask. The second film includes a first layer having carbon and a second layer having carbon formed on the first layer. The second layer has a second carbon density lower than a first carbon density of the first layer.

Abstract: A method for manufacturing a semiconductor device includes: forming a first film on a substrate; forming a second film containing at least carbon on the first film; forming a hole in the second film; and forming a recess, which communicates with the hole, in the first film by etching using the second film as a mask. In this method, the second film includes a first layer formed on the first film, and a second layer formed on the first layer. The first layer having a higher oxygen concentration than the second layer.

Abstract: According to one embodiment, a method of manufacturing a semiconductor device includes forming a first film on a substrate. The method further includes forming a second film on the first film. The method further includes forming a recess in the first film using the second film as a mask. The second film includes a first layer having carbon and a second layer having carbon formed on the first layer. The second layer has a second carbon density lower than a first carbon density of the first layer.

Abstract: A pattern formation method includes forming a first pattern in a first film in a first region and forming a second pattern in the first film in a second region by using an optical lithography technology. The pattern formation method also includes forming a third pattern corresponding to the first pattern in a second film below the first film in the first region by using a self-organization lithography technology. The pattern formation method also includes transferring the third pattern to a third film below the first film and the second film in the first region and transferring the second pattern to the third film in the second region.

Abstract: A semiconductor storage device according to an embodiment of the invention includes a semiconductor substrate and a plurality of memory cells on the semiconductor substrate. A first film is provided above the memory cells to form air gaps above a memory string in which the memory cells are connected in series.

Abstract: According to one embodiment, at first, a first resist film made from a first radiation sensitive composition is formed on a processing object film. Then, light exposure and development to the first resist film are performed to form a first resist pattern. Thereafter, an insolubilization process to insolubilize the first resist pattern to a solvent of a second radiation sensitive composition is performed. Then, a second resist film made from the second radiation sensitive composition is formed on the first resist pattern. Then, light exposure and development to the second resist film are performed to form a second resist pattern. At least one of the first radiation sensitive composition and the second radiation sensitive composition is made of a polymer compound resistant to oxygen that is present at the time of plasma etching.

Abstract: A semiconductor storage device according to an embodiment of the invention includes a semiconductor substrate and a plurality of memory cells on the semiconductor substrate. A first film is provided above the memory cells to form air gaps above a memory string in which the memory cells are connected in series.

Abstract: A pattern formation method according to the present embodiment includes forming a resist film on a treatment target material. The resist film is processed into resist patterns. A cross-link film or a coating agent protecting the resist film is coated onto the resist film. A self-organizing material is applied onto the resist film having the cross-link film or the coating agent coated thereon. The self-organizing material is thermally treated to achieve phase separation. A part of the self-organizing material which has been phase-separated is removed.

Abstract: According to one embodiment, first, an embedment material is embedded between linear core material patterns in such a manner that a height thereof becomes lower than a height of each of the core material patterns. Then, a shrink agent is supplied and solidified on the embedment material. Subsequently, the solidified shrink agent and the embedment material are removed and a spacer film is formed on an object of processing. Then, the spacer film is etched-back and a spacer pattern is formed by removal of the core material patterns. The solidified shrink agent which is formed in such a manner that a width of the spacer pattern becomes narrow in a region corresponding to a position where the shrink agent, in a sectional surface vertical to an extended direction of the spacer pattern is supplied is removed.

Abstract: A pattern formation method according to the present embodiment includes forming a resist film on a treatment target material. The resist film is processed into resist patterns. A cross-link film or a coating agent protecting the resist film is coated onto the resist film. A self-organizing material is applied onto the resist film having the cross-link film or the coating agent coated thereon. The self-organizing material is thermally treated to achieve phase separation. A part of the self-organizing material which has been phase-separated is removed.

Abstract: According to one embodiment, a method of manufacturing a device, includes forming a first core including a line portion extending between first and second regions and having a first width and a fringe having a dimension larger than the first width, forming a mask on the fringe and on a first sidewall on the first core, removing the first core so that a remaining portion having a dimension larger than the first width is formed below the mask, forming a second sidewall on a pattern corresponding the first sidewall and the remaining portion, the second sidewall having a second width less than the first width and facing a first interval less than the first width in the first region and facing a second interval larger than the first interval in the second region.

Abstract: According to one embodiment, a stacked structure body includes: an underlayer; a mask layer provided on the underlayer; a copolymer-containing layer provided on the mask layer, the copolymer-containing layer containing a metal and carbon, and the copolymer-containing layer including a first copolymer region and a second copolymer region provided on the first copolymer region, and the second copolymer region having a lower proportion of a metal concentration to a carbon concentration than the first copolymer region; and a resist pattern provided on the copolymer-containing layer.

Abstract: According to one embodiment, a method of manufacturing a device, includes forming a first core including a line portion extending between first and second regions and having a first width and a fringe having a dimension larger than the first width, forming a mask on the fringe and on a first sidewall on the first core, removing the first core so that a remaining portion having a dimension larger than the first width is formed below the mask, forming a second sidewall on a pattern corresponding the first sidewall and the remaining portion, the second sidewall having a second width less than the first width and facing a first interval less than the first width in the first region and facing a second interval larger than the first interval in the second region.

Abstract: This invention discloses an immersion multiple-exposure method including a first exposure step of performing, using a first mask, immersion exposure of a photoresist film formed on a substrate, a cleaning step of clearing the surface of the substrate, and a second exposure step of performing immersion exposure of the photoresist film using a second mask. No heating process is performed between the first exposure step and the second exposure step.

Abstract: This invention discloses an immersion multiple-exposure method including a first exposure step of performing, using a first mask, immersion exposure of a photoresist film formed on a substrate, a cleaning step of clearing the surface of the substrate, and a second exposure step of performing immersion exposure of the photoresist film using a second mask. No heating process is performed between the first exposure step and the second exposure step.

Abstract: In the method for manufacturing a semiconductor device, a resist film is formed on a substrate and is processed to be provided with openings to form a first resist pattern. Additive-containing layers containing an additive that changes a state of the resist film to a soluble state for a developer are formed so as to cover the first resist pattern. A first resin film having a nature of changing to a soluble state for the developer by containing the additive is formed in the openings of the first resist pattern. The additive is diffused into the first resist pattern and the first resin film to form first and second additive-diffusing portions which can be solved in the developer. The first and second additive-diffusing portions are removed by the developer to form second resist pattern made of remaining portions in the first resist pattern and the first resin film.

Abstract: A pattern forming method according to an embodiment of the present invention includes forming a resist layer on a semiconductor substrate, selectively exposing the resist layer, developing the selectively exposed resist layer, decomposing photosensitizer in the resist layer after developing the resist layer, removing the photosensitizer or acid generated from the decomposed photosensitizer, applying a shrink material on the developed resist layer after removing the photosensitizer or the acid generated from the decomposed photosensitizer, performing a heating process for the resist layer on which the shrink material is applied, and removing a part of the heat-processed shrink material.

Abstract: A pattern forming method includes the following steps. A resist pattern is formed on a to-be-processed film. A mask pattern including the resist pattern and a resin film formed on a surface of the resist pattern is formed. Slimming of the mask pattern is executed.

Abstract: In the method for manufacturing a semiconductor device, a resist film is formed on a substrate and is processed to be provided with openings to form a first resist pattern. Additive-containing layers containing an additive that changes a state of the resist film to a soluble state for a developer are formed so as to cover the first resist pattern. A first resin film having a nature of changing to a soluble state for the developer by containing the additive is formed in the openings of the first resist pattern. The additive is diffused into the first resist pattern and the first resin film to form first and second additive-diffusing portions which can be solved in the developer. The first and second additive-diffusing portions are removed by the developer to form second resist pattern made of remaining portions in the first resist pattern and the first resin film.