Abstract: A node receives, from a center node, a request packet including a data part in which a MAC address and position information of the center node are described, determines whether or not there is a request destination node, where determining that there is the request destination node, additionally describes a MAC address and position information of the node itself in the data part, and transmits the described request packet to the request destination node, where determining that there is no request destination node, determines that the node itself is a terminal node, where determining that the node itself is the terminal node, generates a reply packet including a data part in which all of MAC addresses and all pieces of position information described in the data part of the received request packet are described, and transmits the reply packet to a request source node.

Abstract: Provided is a dietary fiber characterized in that bitterness and unpleasant aftertaste are restrained. The dietary fiber has terminal sugars and is characterized in that the ratio of aldoses relative to the total of the terminal sugars is 10% or less. Such a dietary fiber may be, for example, indigestible dextrin, polydextrose or the like. The dietary fiber may be used as a food additive (for example, a beverage additive).

Abstract: An oxide superconductor member is composed of a tape-shaped substrate, an intermediate layer formed on this substrate and an oxide superconductor thin film layer formed on this intermediate layer. A surface of the tape-shaped substrate is polished by continuously running the tape-shaped substrate. The polishing step includes initial polishing process and finishing process which are carried out such that the average surface roughness Ra of the substrate becomes 2 nanometers or less and the in-plane directionality of the intermediate layer becomes 5° or less after the polishing step.

Abstract: An oxide superconductor member is composed of a tape-shaped substrate, an intermediate layer formed on this substrate and an oxide superconductor thin film layer formed on this intermediate layer. A surface of the tape-shaped substrate is polished by continuously running the tape-shaped substrate. The polishing step includes initial polishing process and finishing process which are carried out such that the average surface roughness Ra of the substrate becomes 2 nanometers or less and the in-plane directionality of the intermediate layer becomes 5° or less after the polishing step.

Abstract: A hard crystal substrate such as a GaN substrate or a SiC substrate is polished by using polishing oil slurry having abrading particles of artificial diamond clusters dispersed in a dispersant. The artificial diamond clusters include approximately spherical agglomerate particles with average particle size D50 of 20 nm or more and 50 nm or less, having primary particles with particle diameters of 2 nm or more and 10 nm or less. A rough polishing process is carried out first such that an average surface roughness of 0.5 nm or more and 1 nm or less is obtained, followed by a finishing process such that the average surface roughness of said surface becomes 0.2 nm or less.

Abstract: A hard crystal substrate such as a GaN substrate or a SiC substrate is polished by using polishing oil slurry having abrading particles of artificial diamond clusters dispersed in a dispersant. The artificial diamond clusters include approximately spherical agglomerate particles with average particle size D50 of 20 nm or more and 50 nm or less, having primary particles with particle diameters of 2 nm or more and 10 nm or less. A rough polishing process is carried out first such that an average surface roughness of 0.5 nm or more and 1 nm or less is obtained, followed by a finishing process such that the average surface roughness of said surface becomes 0.2 nm or less.

Abstract: A polishing system and a method are presented for uniformly polishing efficiently at a fast rate the surface of a tape-like metallic base material of several hundred meters in length. The polishing system is provided not only with devices for causing the base material to travel continuously and applying a specified tension in the base material but also with a first polishing device for randomly polishing the target surface and a second polishing device for carrying out a final polishing on the target surface in the direction of travel of the base material. Polishing marks are formed in the direction of travel on the target surface by the final polishing.

Abstract: A surface polishing method for enhancing crystal orientation on the surface of a tapelike metal substrate in order to enhance the critical current of a superconducting thin film. In an oxide superconductor comprising a tapelike substrate, an intermediate layer formed on the tapelike substrate, and an oxide superconducting thin film layer formed on the intermediate layer, the method for polishing a surface to be polished of the tapelike substrate comprises a step for polishing the surface to be polished while traveling the tapelike substrate continuously, wherein an initial polishing step and a finish polishing step are included. Ultimately, the average surface roughness Ra of the polished surface is 2 nanometer or less and the in-plane orientation ?? is 5° or less.

Abstract: An oxide superconductor member is composed of a tape-shaped substrate, an intermediate layer formed on this substrate and an oxide superconductor thin film layer formed on this intermediate layer. A surface of the tape-shaped substrate is polished by continuously running the tape-shaped substrate. The polishing step includes initial polishing process and finishing process which are carried out such that the average surface roughness Ra of the substrate becomes 2 nanometers or less and the in-plane directionality of the intermediate layer becomes 5° or less after the polishing step.

Abstract: A polishing system and a method are presented for uniformly polishing efficiently at a fast rate the surface of a tape-like metallic base material of several hundred meters in length. The polishing system is provided not only with devices for causing the base material to travel continuously and applying a specified tension in the base material but also with a first polishing device for randomly polishing the target surface and a second polishing device for carrying out a final polishing on the target surface in the direction of travel of the base material. Polishing marks are formed in the direction of travel on the target surface by the final polishing.

Abstract: It is intended to develop a technique for producing a water-soluble polyphenol at high purity and with high efficiency in a short time from hop bract or the like which is a by-product in the beer brewing.

Abstract: A hard crystal substrate such as a GaN substrate or a SiC substrate is polished by using polishing oil slurry having abrading particles of artificial diamond clusters dispersed in a dispersant. The artificial diamond clusters include approximately spherical agglomerate particles with average particle size D50 of 20 nm or more and 50 nm or less, having primary particles with particle diameters of 2 nm or more and 10 nm or less. A rough polishing process is carried out first such that an average surface roughness of 0.5 nm or more and 1 nm or less is obtained, followed by a finishing process such that the average surface roughness of said surface becomes 0.2 nm or less.

Abstract: A method and apparatus for washing a sliced silicon ingot reduces the consumption of detergent used to clean the ingot after it is sliced to define individual semiconductor wafers. The ingot is taken as a unit mounted to a holder after slicing to a pre-washing machine. The machine sprays jets of warm to hot water onto the ingot and holder to flush away dust generated during the slicing procedure which has adhered to the ingot. The water spray removes much of the dust. Thus when the ingot is subsequently washed with detergent, less dust must be removed thereby increasing the effective performance life of a given quantity of detergent.

Abstract: The objectives of the present invention are achieved by preparing a foamable composition comprising a viscous liquid and a gas homogeneously dispersed in the liquid. The compositions are prepared by blending a pressurized gas with the viscous liquid in a mixing chamber. In accordance with the present method the flow rate of the pressurized gas into the mixing chamber is controlled as a function of the flow rate of at least one high viscosity liquid into said chamber. The apparatus includes a means for controlling the flow rate of the pressurized gas as a function of either the difference in the feed pressures of said gas and said liquid or a predetermined ratio of the volumes of liquid and gas present in said mixing chamber.