Abstract: A plasma processing system includes a processing chamber provided with a plasma generation unit for applying radio-frequency power to supplied processing gas to generate plasma and a stage for holding workpieces, and a control computer for generating plasma in accordance with preset processing conditions to sequentially apply plasma processing to the workpieces and also for sequentially collecting system parameter values each of which represents a state of the plasma processing. The computer is provided with a record unit for storing, in every predetermined period, a frequency that each of the collected system parameter values deviates from a preset reference value, an occurrence rate calculation unit for calculating, based on the frequency, an occurrence rate that the each of the system parameter values deviates from the reference value, and a comparison unit for comparing the occurrence rate with a preset reference value to diagnose a state of the system.

Abstract: The invention provides a plasma processing apparatus capable of setting the temperature of the plasma processing chamber accurately to a specific state, and to perform highly accurate plasma processing while maintaining a constant plasma processing property.

Abstract: A plasma processing apparatus includes: a processing chamber; a state detector for detecting a state of plasma in the processing chamber; an input unit for inputting process result data of a specimen processed in the plasma processing chamber; and a controller including a prediction equation forming unit for forming a prediction equation of a process result in accordance with plasma state data detected with the state detector for the plasma process simulating a specimen existing state in the processing chamber in a specimen non-placed state and process result data of the specimen input with the input unit and processed by the plasma process in a specimen placed state, and storing the prediction equation, wherein the controller predicts the process result of a succeeding plasma process in accordance with plasma state data newly acquired via the state detector in the specimen non-placed state and the stored prediction equation.

Abstract: A plasma processing system includes a process chamber equipped with a gas supply unit, a gas exhaust and an electromagnetic energy supply unit for generating plasma from process gasses, thereby subjecting a specimen placed on a specimen stage to a plasma process. The system includes a spectrometer detecting a spectrum of plasma emission generated in the chamber, flow controllers controlling flow rates of process gasses to be supplied, and a controller controlling the flow controllers. The controller includes a calculation unit for calculating an amount of reaction byproducts generated in the chamber, in accordance with the spectrum of the plasma emission detected with the spectrometer and an input unit for inputting a target timeline of the amount of reaction byproducts, and controls amounts of the process gasses such that a calculation result of the amount of reaction byproducts becomes coincident with the input target timeline.