Abstract: A sintered magnet body (RaT1bMcBd) coated with a powder mixture of an intermetallic compound (R1iM1j, R1xT2yM1z, R1iM1jHk), alloy (M1dM2e) or metal (M1) powder and a rare earth (R2) oxide is diffusion treated. The R2 oxide is partially reduced during the diffusion treatment, so a significant amount of R2 can be introduced near interfaces of primary phase grains within the magnet through the passages in the form of grain boundaries. The coercive force is increased while minimizing a decline of remanence.

Abstract: A SiC single crystal is produced by impregnating a molten alloy of silicon and a metallic element M that increases carbon solubility into a SiC sintered body to form a SiC crucible, placing silicon and M in the crucible and heating the crucible to melt the silicon and M and form a Si—C solution, dissolving silicon and carbon in the solution from surfaces of the crucible in contact with the solution, contacting a SiC seed crystal with the top of the solution to grow a first SiC single crystal on the SiC seed crystal by a solution process, and bulk growing a second SiC single crystal on a face of the solution-grown first SiC single crystal by a sublimation or gas process. This method enables a low-dislocation, high-quality SiC single crystal to be produced by a vapor phase process.

Abstract: In SiC single crystal production by the solution process, an alloy of silicon (Si) and a metallic element M that increases the solubility of carbon (C) is pre-impregnated into a SiC sintered body having a relative density of 50 to 90%, following which Si and M are placed in a SiC crucible made of the SiC sintered body and the Si and M within the SiC crucible are melted, forming a Si—C solution. With heating, SiC from the SiC sintered body dissolves into the Si—C solution, efficiently supplying Si and C to the Si—C solution. As a result, Si and C are supplied uniformly and in the proper amount from all areas of contact between the SiC crucible and the Si—C solution, enabling a high-quality SiC single crystal to be stably produced over a long time at a rapid growth rate.

Abstract: A sintered magnet body (RaT1bMcBd) coated with a powder mixture of an intermetallic compound (R1iM1j, R1xT2yM1z, R1iM1jHk), alloy (M1dM2e) or metal (M1) powder and a rare earth (R2) oxide is diffusion treated. The R2 oxide is partially reduced during the diffusion treatment, so a significant amount of R2 can be introduced near interfaces of primary phase grains within the magnet through the passages in the form of grain boundaries. The coercive force is increased while minimizing a decline of remanence.

Abstract: In the present invention, in producing a SiC single crystal in accordance with a solution method, a crucible containing SiC as a main component and having an oxygen content of 100 ppm or less is used as the crucible to be used as a container for a Si—C solution. In another embodiment, a sintered body containing SiC as a main component and having an oxygen content of 100 ppm or less is placed in the crucible to be used as a container for a Si—C solution. The SiC crucible and SiC sintered body are obtained by molding and baking a SiC raw-material powder having an oxygen content of 2000 ppm or less. SiC, which is the main component of these, serves as a source for Si and C and allows Si and C to elute into the Si—C solution by heating.

Abstract: In an outer blade cutting wheel comprising an annular thin disc base of cemented carbide having an outer diameter of 80-200 mm, an inner diameter of 30-80 mm, and a thickness of 0.1-1.0 mm, and a blade section disposed on an outer periphery of the base, the blade section comprises diamond grains and/or CBN grains bound with a metal bond having a Young's modulus of 0.7-4.0×1011 Pa and has a thickness which is greater than the thickness of the base by at least 0.01 mm. The outer blade cutting wheel is capable of cutting a workpiece at a high accuracy and a reduced allowance, improves machining yields, and reduces machining costs.

Abstract: A sintered magnet body (RaT1bMcBd) coated with a powder mixture of an intermetallic compound (R1iM1j, R1xT2yM1z, R1iM1jHk), alloy (M1dM2e) or metal (M1) powder and a rare earth (R2) oxide is diffusion treated. The R2 oxide is partially reduced during the diffusion treatment, so a significant amount of R2 can be introduced near interfaces of primary phase grains within the magnet through the passages in the form of grain boundaries. The coercive force is increased while minimizing a decline of remanence.

Abstract: A sintered magnet body (RaT1bMcBd) coated with a powder mixture of an intermetallic compound (R1iM1j, R1xT2yM1z, R1iM1jHk), alloy (M1dM2e) or metal (M1) powder and a rare earth (R2) oxide is diffusion treated. The R2 oxide is partially reduced during the diffusion treatment, so a significant amount of R2 can be introduced near interfaces of primary phase grains within the magnet through the passages in the form of grain boundaries. The coercive force is increased while minimizing a decline of remanence.

Abstract: A sintered magnet body (RaT1bMcBd) coated with a powder mixture of an intermetallic compound (R1iM1j, R1xT2yM1z, R1iM1jHk), alloy (M1dM2e) or metal (M1) powder and a rare earth (R2) oxide is diffusion treated. The R2 oxide is partially reduced during the diffusion treatment, so a significant amount of R2 can be introduced near interfaces of primary phase grains within the magnet through the passages in the form of grain boundaries. The coercive force is increased while minimizing a decline of remanence.

Abstract: A sintered magnet body (RaT1bMcBd) coated with a powder mixture of an intermetallic compound (R1iM1j, R1xT2yM1z, R1iM1jHk), alloy (M1dM2e) or metal (M1) powder and a rare earth (R2) oxide is diffusion treated. The R2 oxide is partially reduced during the diffusion treatment, so a significant amount of R2 can be introduced near interfaces of primary phase grains within the magnet through the passages in the form of grain boundaries. The coercive force is increased while minimizing a decline of remanence.

Abstract: A SiC single crystal is prepared by the solution process of placing a seed crystal in contact with a Si—C solution in a crucible and letting a SiC single crystal to grow from the seed crystal. The method includes the first growth step of conducting crystal growth using (0001) or (000-1) plane of a SiC single crystal of which the seed crystal is composed, as the growth surface, and the second growth step of conducting crystal growth using (1-100) or (11-20) plane of a SiC single crystal resulting from the first growth step as the growth surface. A SiC single crystal of high homogeneity and quality is obtained, which is reduced in threading screw dislocations, threading edge dislocations, basal plane dislocations, micropipes, and stacking faults.

Abstract: Provided is a wavelength conversion member in which the following are dispersed in a thermoplastic resin: a LuYAG fluorescent material that is represented by (Y1-?-?Lu?Ce?)3Al5O12 (in which ? is a positive number between 0.3-0.8 inclusive and ? is a positive number between 0.01-0.05 inclusive), that emits yellow-green light as a result of excitation by blue light, and that has a diffraction peak within a range in which the diffraction angle 2? in X-ray diffraction by the K?1 line of Cu is 52.9° to 53.2° inclusive; and a KSF fluorescent material that is represented by K2(Si1-xMnx)F6 (in which x is a positive number between 0.001 and 0.3 inclusive) and that emits red light as a result of excitation by blue light. The content of the KSF fluorescent material in the wavelength conversion member is 1 to 5 times the content of the LuYAG fluorescent material by mass ratio.

Abstract: A liquid-liquid extraction unit includes an extraction/separation tank (10) into which an aqueous phase in bubble form is admitted from an upper inlet (20) in one sidewall and an organic phase in bubble form is admitted from a lower inlet (30) in the one sidewall. The upward moving organic phase is contacted with the downward moving aqueous phase. After contact, the organic phase is discharged through an upper outlet (40) in an opposite sidewall and the aqueous phase is discharged through a lower outlet (50) in the opposite sidewall.

Abstract: A turn signal for a vehicle has a blue LED as a light source, and an outer cover irradiated by the blue light. The outer cover includes a molded body of a polymeric material including phosphors dispersed therein that absorb blue light and emit light. By means of the present invention, it is possible to provide a turn signal for vehicles which has improved visibility and which imparts excellent visibility and sufficient luminous intensity over a wide angle. Further, because the entire outer cover surface-emits light, uniformity of luminous intensity is ensured without subjecting the outer cover to light scattering treatment, enabling as a result preventing glare caused by light scattering treatment, making this turn signal safe without being unpleasant for pedestrians and drivers of nearby vehicles. Furthermore, because no complex optical design is necessary, this turn signal saves space and can be arranged in a vehicle.

Abstract: Disclosed is an adjustment component that: includes a complex fluoride fluorophore represented by A2(M1-xMnx)F6 (in the formula: M is one or two or more of type of tetravalent element selected from Si, Ti, Zr, Hf, Ge, and Sn; A is one or two or more of type of alkali metal selected from Li, Na, K, Rb, and Cs and including at least Na and/or K; and x is from 0.001 to 0.3); and adjusts the chromaticity and/or color rendering index of illumination light by absorbing light having a wavelength of from 420 nm to 490 nm inclusive, and emitting light including a red wavelength component.

Abstract: A method of producing a SiC single crystal includes: disposing a SiC seed crystal at a bottom part inside a graphite crucible; causing a solution containing Si, C and R (R is at least one selected from the rare earth elements inclusive of Sc and Y) or X (X is at least one selected from the group consisting of Al, Ge, Sn, and transition metals exclusive of Sc and Y) to be present in the crucible; supercooling the solution so as to cause the SiC single crystal to grow on the seed crystal; and adding powdery or granular Si and/or SiC raw material to the solution from above the graphite crucible while keeping the growth of the SiC single crystal.

Abstract: A rare earth magnet is prepared by disposing a R1-T-B sintered body comprising a R12T14B compound as a major phase in contact with an R2-M alloy powder and effecting heat treatment for causing R2 element to diffuse into the sintered body. The alloy powder is obtained by quenching a melt containing R2 and M. R1 and R2 are rare earth elements, T is Fe and/or Co, M is selected from B, C, P, Al, Si, Ti, V, Cr, Mn, Fe, Co, Ni, Cu, Zn, Ga, Ge, Zr, Nb, Mo, Ag, In, Sn, Sb, Hf, Ta, W, Pt, Au, Pb, and Bi.

Abstract: A SiC single crystal is prepared by the solution process of placing a seed crystal in contact with a Si-C solution in a crucible and letting a SiC single crystal to grow from the seed crystal. The method includes the first growth step of conducting crystal growth using (0001) or (000-1) plane of a SiC single crystal of which the seed crystal is composed, as the growth surface, and the second growth step of conducting crystal growth using (1-100) or (11-20) plane of a SiC single crystal resulting from the first growth step as the growth surface. A SiC single crystal of high homogeneity and quality is obtained, which is reduced in threading screw dislocations, threading edge dislocations, basal plane dislocations, micropipes, and stacking faults.

Abstract: In the present invention, in producing a SiC single crystal in accordance with a solution method, a crucible containing SiC as a main component and having an oxygen content of 100 ppm or less is used as the crucible to be used as a container for a Si—C solution. In another embodiment, a sintered body containing SiC as a main component and having an oxygen content of 100 ppm or less is placed in the crucible to be used as a container for a Si—C solution. The SiC crucible and SiC sintered body are obtained by molding and baking a SiC raw-material powder having an oxygen content of 2000 ppm or less. SiC, which is the main component of these, serves as a source for Si and C and allows Si and C to elute into the Si—C solution by heating.

Abstract: In the present invention, in producing a SiC single crystal in accordance with a solution method, a crucible containing SiC as a main component and having an oxygen content of 100 ppm or less is used as the crucible to be used as a container for a Si—C solution. In another embodiment, a sintered body containing SiC as a main component and having an oxygen content of 100 ppm or less is placed in the crucible to be used as a container for a Si—C solution. SiC, which is the main component of these, serves as a source for Si and C and allows Si and C to elute into the Si—C solution by heating. Since the oxygen content of SiC is 100 ppm or less, generation of gas in the Si—C solution is suppressed.