Abstract: A multiple wavelength light emitting device is provided wherewith the resonance strength and directivity between colors can be easily adjusted for balance. This light emitting device comprises a light emission means 4 for emitting light containing wavelength components to be output, and a semi-reflecting layer group 2 wherein semi-reflecting layers 2R, 2G, and 2B that transmit some light having specific wavelengths emitted from the light emission means and reflect the remainder are stacked up in order in the direction of light advance in association with wavelengths of light to be output. Light emission regions AR, AG, and AB are determined in association with the wavelengths of light to be output.

Abstract: To provide an optical communication device suitable for the transmission of a high-frequency signal. An optical communication device includes a first substrate having a light-emitting element or a light-receiving element on one side of the first substrate; a second substrate having an electronic circuit to perform operation control of the light-emitting element or the light-receiving element; and a flexible substrate which connects the section between the light-emitting element or the light-receiving element and the electronic circuit while achieving impedance matching.

Abstract: A light-emitting device having a light-emitting layer capable of emitting light by electroluminescence, a pair of anode and cathode for applying an electric field to the light-emitting layer, and an optical element for causing light generated in the light-emitting layer to be transmitted in a predetermined direction. The optical element forms an incomplete photonic band capable of inhibiting spontaneous emission of light in one dimension or two dimensions and includes first and second medium layers. Light generated in the light-emitting layer is emitted by inhibiting spontaneous emission in two dimensions by a first optical element and a second optical element.

Abstract: The light-emitting device has a substrate, an anode, an organic light-emitting layer, a cathode, a first and second gratings (optical sections). The first grating has a one-dimensional periodic refractive index distribution in the X direction and is capable of forming a photonic band gap. The second grating has a one-dimensional periodic refractive index distribution in the Y direction and is capable of forming a photonic band gap. A defect section is provided either for the first or second grating. This defect section is designed so that the energy level caused by the defect in within a prescribed emission spectrum. The organic light-emitting layer can emit light by electrically pumping, and an electric field is produced by the anode and cathode. The light-emitting device utilizes a two-dimensional photonic band gap and produces light with an extremely narrow spectral width at very high efficiency.

Abstract: The present invention provides a surface-emitting laser wherein the transverse modes are controlled and phase-synchronized laser beams are emitted from a plurality of light-emitting portions to produce what appears to be a single laser beam, and a method of fabrication thereof. This laser comprises a columnar portion (20) forming part of a reflective mirror on a light-emitting side, an embedding layer (22) surrounding the periphery of the columnar portion (20), an upper electrode (23) formed on the columnar portion (20) and the embedding layer (22), and an insulating layer (18) formed below the columnar portion (20) and the embedding layer (22). A plurality of aperture portions (23a) are formed in the upper electrode (23) above the columnar portion (20), and aperture portions (18a) are formed in the insulation layer (18) at positions corresponding to the aperture portions (23a).

Abstract: An edge-emitting type light-emitting device (11000, 14000) comprises an organic light-emitting layer (40), a pair of electrode layers (30) and (50) for applying an electric field to the organic light-emitting layer (40), and an optical waveguide which transmits light emitted from the organic light-emitting layer (40) to the edge. The optical waveguide comprises a core layer (20) mainly transmitting light, and cladding layers (10) and (60) having a refractive index lower than that of the ecore layer (20). The core layer (20) may be a layer different from the organic light-emitting layer (40) or may comprise the organic light-emitting layer. A grating (12) is formed in the core layer (20) or in the boundary area between the core layer (20) and the cladding layer (10). A light-emitting device (31000) may comprise an optical fibre section (200). Another embodiment (43000) may comprise a defect and a grating having a one-dimensional periodic refractive index distribution and constituting a photonic band gap.

Abstract: The invention provides a manufacturing method of an optical transceiver whereby the manufacturing process can be further simplified. A method to manufacture an optical transceiver includes: combining an optical socket and an assembling object to be assembled with the optical socket, where the optical socket includes a fitting hole to mount an optical plug holding an end portion of an optical fiber; mounting an optical head to photograph the assembling object in the fitting hole of the optical socket, and obtaining an image of the assembling object exposed to the fitting hole and reference position information in the photographed image display screen; a detecting a difference between the image of the assembling object and the reference position information; reducing the difference by moving the optical socket and the assembling object relative to each other based on the difference; and fixing the assembling object and the optical socket.

Abstract: The invention provides an optical transceiver which makes it possible to simplify a production process. An optical transceiver of the present invention includes an optical socket to mount an optical plug disposed at one end portion of an optical fiber); a light-condensing device; and an optical element to emit light in accordance with a supplied electrical signal and an optical element to generate an electrical signal in accordance with a received light signal; and a light-transmissive substrate to support the optical socket, the light-condensing device, and the optical elements so that the optical fiber, the light-condensing device, and the optical elements are aligned on an optical axis of the optical transceiver.

Abstract: The present invention provides a surface emitting laser and a photodiode which permit secure mounting even in mounting by flip chip bonding, and high-speed modulation. The present invention also provides a manufacturing method therefor and an optoelectric integrated circuit using the surface emitting laser and the photodiode. Semiconductor stacked layers stacked on a semiconductor substrate have a light emitting portion and a reinforcing portion formed with a recessed portion provided therebetween, and a p-type ohmic electrode and an n-type ohmic electrode are formed on the top of the reinforcing portion. The p-type ohmic electrode is electrically connected to a p-type contact layer through a contact hole vertically formed in polyimide buried in the recessed portion to permit supply of a current to the light emitting portion in the thickness direction.

Abstract: An efficient multiple-wavelength light emitting device is provided. This multiple-wavelength light emitting device comprises a light emitting layer 4 for emitting light containing wavelength components to be output, a negative electrode 5 that is positioned at the back surface of the light emitting layer and that transmits at least a portion of the light, reflecting layers 7R, 7G, and 7B, positioned at the back surface of the negative electrode, for reflecting, of the light emitted through the negative electrode to the back surface, light having specific wavelengths, which reflecting layers are stacked up in order perpendicularly to the light axis, in correspondence with the wavelengths of the light to be reflected, thus configuring a reflecting layer group 7. In the direction perpendicular to the light axis, divisions are made in any of at least two or more light emission regions which reflect light of different wavelengths.

Abstract: In order to facilitate control of the polarization plane of a laser beam emerging from a surface-emitting-type semiconductor laser in a specific direction and to suppress occurrence of fluctuations and switching of the polarization plane depending on the optical output and the environmental temperature, a strain generating section (19) is arranged adjacent to a resonator (10B) of a semiconductor laser. The strain generating section (19) impresses anisotropic stress to the resonator (10B) to generate strain, resulting in birefringence and dependence of the gain on the polarization in the resonator (10A). This enables stabilized control of the polarization plane.

Abstract: The present invention provides a surface-emitting laser which is capable of emitting a laser beam with a single-peak spatial distribution, but is incapable of guiding modes other than a single transverse mode, and a method of fabrication thereof. The laser comprises a columnar portion (20) that forms part of a reflective mirror on a light-emitting side and an embedding layer (22) that surrounds the periphery of this columnar portion (20). The columnar portion (20) is made of single-crystalline AlGaAs and the embedding layer (22) is made of polycrystalline AlGaAs. The absolute refractive index of the embedding layer (22) is slightly smaller than that of the columnar portion (20), thus a laser beam with a single transverse mode is obtained.

Abstract: A surface-emitting device has a substrate and a light-emitting device section formed on the substrate, and emits light in a direction intersecting the substrate. The light-emitting device section includes a light-emitting layer, an anode and cathode for applying an electrical field to the light-emitting layer, and a grating.

Abstract: A directional coupler of the present invention includes a substrate; a first waveguide layer; a second waveguide layer disposed over the first waveguide layer; a separation layer which separates the first waveguide layer and the second waveguide layer at least at one end; and an optical coupling section which is a predetermined region in which the first waveguide layer and the second waveguide layer approach or come in contact with each other. Each of the first waveguide layer and the second waveguide layer is integrally and continuously formed.

Abstract: A light-emitting device includes a light-emitting layer capable of generating light by electroluminescence, a pair of electrodes applies an electric field to the light-emitting layer, and a substrate having a depression in a surface, and the light-emitting layer is disposed within the depression of the substrate.

Abstract: An organic semiconductor device of the present invention has an organic semiconductor layer disposed within a depression formed in a substrate; a drain electrode and a source electrode; and a gate electrode to face the organic semiconductor layer with a gate insulating layer interposed. Alternatively, an organic semiconductor device of the present invention has an insulating layer disposed on a substrate; an organic semiconductor layer disposed within a depression formed in the insulating layer; a drain electrode and a source electrode; and a gate electrode disposed to face the organic semiconductor layer with a gate insulating layer interposed.

Abstract: An elastic copolymer composition which contains a copolymer having a content of polymer units based on vinylidene fluoride as low as from 0.5 to 15 mol %, which is satisfactory in polyol vulcanizability and which gives a vulcanizate excellent in heat resistance and oil resistance. This composition comprises a tetrafluoroethylene (35 to 65 mol %)/propylene (20 to 50 mol %)/vinylidene fluoride (0.5 to 15 mol %) copolymer, an organic quaternary ammonium hydroxide or a salt of an organic quaternary phosphonium compound with a nitrogen-containing heterocyclic compound, an organic polyhydroxy compound, and a metal oxide or a metal hydroxide, and optionally contains an amine compound.

Abstract: A light emitting device includes a substrate, and a light emitting element section formed over the substrate. The light emitting element section includes a first light emitting layer in which light is generated due to electroluminescence, one pair of electrode layers used to apply an electric field to the first light emitting layer, a second light emitting layer which absorbs light generated in the first light emitting layer and generates light having a longer wavelength than a wavelength of the absorbed light, and one pair of dielectric multilayer films which are formed under and above the second light emitting layer, respectively. A wavelength range of light which is reflected by the pair of dielectric multilayer films includes a wavelength range of light generated in the second light emitting layer.

Abstract: A light-emitting device (1000) has a light-emitting device section (100) and a waveguide section (200) for transmitting light emitted from the light-emitting device section, which are integrally formed on a substrate (10). The light-emitting device section (100) has a transparent anode (200) which is formed on the substrate (10) and forms a light-transmitting section, a grating which is formed in part of the anode (20), an insulation layer (16) having an opening (16a) facing the grating (12), a light-emitting layer (14) at least part of which is formed in the opening (16a) of the insulation layer (16), and a cathode (22). A waveguide section (200) has a core layer (30) which is formed on the substrate (10) and is integrally formed with the anode (20), and a cladding layer (32) which covers an exposed area of the core layer (30) and is integrally formed with the insulation layer (16).

Abstract: The present invention aims at providing a light source for a semiconductor laser beam scanner having high resolution in scanning and a high degree of mounting freedom, and suitable for emitting a laser beam from the surface. Therefore, a surface emission type semiconductor laser includes at least a first mirror 102, an active layer 103, a current narrowing layer 113, a contact layer 106, and a second mirror 111, which are formed on a semiconductor substrate 101; wherein the current narrowing layer 113 is made of a stripe AlAs layer 105, and an Al oxide layer 108 formed to surround the AlAs layer 105; the region of the contact layer 106, which overlaps the Al oxide layer, is formed in a comb shape 109, and independent contact electrodes 110 are respectively formed on the upper surfaces of the teeth of the comb shape 109 of the contact layer.