Abstract: There are provided a composition which has a larger attracted number than (9Z)-9,13-tetradecadien-11-ynal alone; and others. More specifically, there are provided a composition bioactive to Stenoma catenifer (STENCA), the composition including (9Z)-9,13-tetradecadien-11-ynal and (9E)-9,13-tetradecadien-11-ynal; a sustained release preparation for controlling STENCA, the preparation including the composition and a carrier or container for sustainedly releasing the (9Z)-9,13-tetradecadien-11-ynal and the (9E)-9,13-tetradecadien-11-ynal; and a method for controlling STENCA, the method including a step of installing the sustained release preparation in a field to release the (9Z)-9,13-tetradecadien-11-ynal and the (9E)-9,13-tetradecadien-11-ynal into the field.

Abstract: The present invention provides a process for preparing 2-methyl-N-(2?-methylbutyl)butanamide of the following formula (1):the process comprising: subjecting an ?-arylethyl-2-methylbutylamine compound of the following general formula (2): wherein Ar represents a substituted or unsubstituted aryl group having 6 to 20 carbon atoms, to N-2-methylbutyrylation to form an N-?-arylethyl-2-methyl-N-(2?-methylbutyl)butanamide compound of the following general formula (3): wherein Ar is as defined above, and removing the ?-arylethyl group of the resulting compound (3) to form 2-methyl-N-(2?-methylbutyl)butanamide (1).

Abstract: An object of the present invention is to provide: a compound containing an imide group which is not only cured under film formation conditions of inert gas as well as air and has excellent heat resistance and properties of filling and planarizing a pattern formed on a substrate, but can also form an organic underlayer film with favorable adhesion to a substrate, and a material for forming an organic film containing the compound.

Abstract: An epoxy compound of formula (1) is provided. A resist composition comprising the epoxy compound is capable of adequately controlling the diffusion length of acid generated from an acid generator without sacrificing sensitivity.

Abstract: The present invention relates to a process for preparing a (1S,2R)-(2-hydroxy-3,5,5-trimethyl-3-cyclopentenyl)methyl carboxylate compound of the following general formula (S,R)-(2), wherein R1 represents a monovalent hydrocarbon group having 1 to 6 carbon atoms, and a bold wedged bond represents the absolute configuration, and a (1R,2S)-(2-acetoxy-3,5,5-trimethyl-3-cyclopentenyl)methyl carboxylate compound of the following general formula (R,S)-(3), wherein R1 is as defined above, a hashed wedged bond represents the absolute configuration, and Ac represents an acetyl group, the process comprising: subjecting a (1RS,2SR)-(2-hydroxy-3,5,5-trimethyl-3-cyclopentenyl)methyl carboxylate compound of the following general formula (RS,SR)-(2), wherein R1 is as defined above, and a hashed unwedged bond represents a relative configuration, to a kinetic resolution reaction with a lipase in the presence of vinyl acetate to obtain the (1S,2R)-(2-hydroxy-3,5,5-trimethyl-3-cyclopentenyl)methyl carboxylate compound ((S,R)-(2)

Abstract: A compound including two or more partial structures shown by the following general formula (1-1) in the molecule, wherein each Ar independently represents an aromatic ring optionally having a substituent or an aromatic ring that contains at least one nitrogen atom optionally having a substituent, and two Ars are optionally bonded with each other to form a ring structure; the broken line represents a bond with an organic group; B represents an anionic leaving group that is capable of forming a reactive cation due to effect of either or both of heat and acid. This provides a compound that is capable of curing under the film forming conditions in air or an inert gas without forming byproducts, and forming an organic under layer film that has good dry etching durability during substrate processing not only excellent characteristics of gap filling and planarizing a pattern formed on a substrate.

Abstract: A resist underlayer film material used in multilayer resist method contains (A) compound shown by following general formula (1), and (B) organic solvent, where X independently represents monovalent organic group shown by following general formula (2); W contains an “m” number of partial structures each independently shown by following formula (3); “m” and “n” each represent an integer of 1 to 10; broken lines represent bonding arms; Z represents aromatic group; A represents single bond or —O—(CH2)p—; “k” represents integer of 1 to 5; “p” represents integer of 1 to 10; R01 represents hydrogen atom or monovalent organic group having 1 to 10 carbon atoms. Material is capable of forming resist underlayer film excellent in planarizing property in fine patterning process by multilayer resist method in semiconductor-device manufacturing process; and patterning processes and methods for forming resist underlayer film use material.

Abstract: A deposition mask package according to the present embodiment includes a receiving portion, a lid portion that faces the receiving portion, a deposition mask that is arranged between the receiving portion and the lid portion and has an effective region in which a plurality of through-holes is formed. The receiving portion has a first opposing surface facing the lid portion and a concave portion provided on the first opposing surface. The concave portion is covered by a first flexible film. The effective region of the deposition mask is arranged on the concave portion with the first flexible film interposed therebetween.

Abstract: The invention provides a composition for forming an organic film, which generates no by-product even under such a film formation condition in an inert gas to prevent substrate corrosion, which is capable of forming an organic film not only excellent in properties of filling and planarizing a pattern formed on a substrate but also favorable for dry etching resistance during substrate processing, and further which causes no fluctuation in film thickness of the film due to thermal decomposition even when a CVD hard mask is formed on the organic film. The composition for forming an organic film includes (A) a polymer having a repeating unit shown by the following general formula (1) and (B) an organic solvent.

Abstract: A deposition mask package according to the present embodiment includes a receiving portion, a lid portion that faces the receiving portion, a deposition mask that is arranged between the receiving portion and the lid portion and has an effective region in which a plurality of through-holes is formed. The receiving portion has a first opposing surface facing the lid portion and a concave portion provided on the first opposing surface. The concave portion is covered by a first flexible film. The effective region of the deposition mask is arranged on the concave portion with the first flexible film interposed therebetween.

Abstract: A method simply produces a narrowly distributed and high-purity polyalkylene glycol derivative having an amino group at an end without using a heavy metal catalyst.

Abstract: A compound shown by the following general formula (1-1), AR1 and AR2 each independently represent an aromatic ring or an aromatic ring containing at least one nitrogen and/or sulfur atom, two AR1s, AR1 and AR2, or two AR2s are optionally bonded; AR3 represents a benzene, naphthalene, thiophene, pyridine, or diazine ring; A represents an organic group; B represents an anionic leaving group; Y represents a divalent organic group; “p” is 1 or 2; “q” is 1 or 2; “r” is 0 or 1; “s” is 2 to 4; when s=2, Z represents a single bond, divalent atom, or divalent organic group; and when s=3 or 4, Z represents a trivalent or quadrivalent atom or organic group. This compound cures to form an organic film, and also forms an organic under layer film.

Abstract: The invention provides a composition for forming an organic film, which generates no by-product even under such a film formation condition in an inert gas to prevent substrate corrosion, which is capable of forming an organic film not only excellent in properties of filling and planarizing a pattern formed on a substrate but also favorable for dry etching resistance during substrate processing, and further which causes no fluctuation in film thickness of the film due to thermal decomposition even when a CVD hard mask is formed on the organic film. The composition for forming an organic film includes (A) a polymer having a repeating unit shown by the following general formula (1) and (B) an organic solvent.

Abstract: The present invention is a method for purifying an NCA, including the steps of: a) dissolving an NCA contaminated with impurities into a solvent which is a good solvent and is not a chlorinated solvent followed by stirring to precipitate an undissolved impurity to afford a suspension, b) adding an acidic filter aid having ability to trap a basic impurity to the obtained suspension followed by filtration and/or forming a fixed bed of the acidic filter aid having ability to trap a basic impurity followed by filtering the suspension to bring the suspension to be in contact with the acidic filter aid having ability to trap a basic impurity, and c) adding the obtained filtrate dropwise to a poor solvent for NCA to crystallize out the NCA in which the impurities are removed. This makes it possible to purify a low-purity NCA conveniently to afford a high-purity NCA.

Abstract: A composition for forming a silicon-containing resist underlayer film contains at least one or more kinds of a quaternary ammonium salt shown by the following general formula (A-1), and a thermally crosslinkable polysiloxane (Sx), where Ar1 represents an aromatic group having 6 to 20 carbon atoms, or a heteroaromatic group having 4 to 20 carbon atoms. R11 represents an alkyl group, alkenyl group, oxoalkyl group, or oxoalkenyl group having 1 to 12 carbon atoms, an aryl group having 6 to 20 carbon atoms, or an aralkyl group or aryloxoalkyl group having 7 to 12 carbon atoms. Some or all of hydrogen atoms of these groups are optionally substituted. Z? represents an organic or inorganic anion as a counterion of the quaternary ammonium cation. An object is to provide a silicon-containing resist underlayer film having high effect of suppressing ultrafine pattern collapse and appropriate etching rate in multilayer resist methods.

Abstract: A composition for forming an organic film contains a polymer having a partial structure shown by the following general formula (1) as a repeating unit, and an organic solvent. Each of AR1 and AR2 represents a benzene ring or naphthalene ring which optionally have a substituent; W1 represents a particular partial structure having a triple bond, and the polymer optionally contains two or more kinds of W1; and W2 represents a divalent organic group having 6 to 80 carbon atoms and at least one aromatic ring. This invention provides: a polymer curable even under film formation conditions in an inert gas and capable of forming an organic film which has not only excellent heat resistance and properties of filling and planarizing a pattern formed in a substrate, but also favorable film formability onto a substrate with less sublimation product; and a composition for forming an organic film, containing the polymer.

Abstract: A material for forming an organic film using a polymer including an imide group for forming an organic underlayer film that cures under film-forming conditions in the air and in an inert gas, generates no by-product in heat resistance and embedding and flattening characteristics of a pattern formed on a substrate, also adhesiveness to a substrate for manufacturing a semiconductor apparatus, a method for forming an organic film, and a patterning process. The material includes (A) a polymer having a repeating unit represented by the following general formula (1A) whose terminal group is a group represented by either of the following general formulae (1B) or (1C), and (B) an organic solvent: wherein, W1 represents a tetravalent organic group, and W2 represents a divalent organic group: wherein, R1 represents any of the groups represented by the following formula (1D), and two or more of R1s may be used in combination.

Abstract: An object of the present invention is to provide: a compound containing an imide group which is not only cured under film formation conditions of inert gas as well as air, generates no by-product and has excellent heat resistance and properties of filling and planarizing a pattern formed on a substrate, but can also form an organic underlayer film with favorable adhesion to a substrate.

Abstract: An object of the present invention is to provide: a compound containing an imide group which is not only cured under film formation conditions of inert gas as well as air and has excellent heat resistance and properties of filling and planarizing a pattern formed on a substrate, but can also form an organic underlayer film with favorable adhesion to a substrate, and a material for forming an organic film containing the compound.

Abstract: An epoxy compound of formula (1) is provided. A resist composition comprising the epoxy compound is capable of adequately controlling the diffusion length of acid generated from an acid generator without sacrificing sensitivity.