Abstract: According to one embodiment, a non-volatile memory device includes a stacked structure and a voltage application portion. The stacked structure includes a memory portion, and an electrode stacked with the memory portion and having a surface having a portion facing the memory portion. The voltage application portion applies a voltage to the memory portion to cause a change in a resistance in the memory portion to store information. The surface includes a first region and a second region. The first region contains at least one of a metallic element, Si, Ga, and As. The first region is conductive. The second region contains at least one of the metallic element, Si, Ga, and As, and has a content ratio of nonmetallic element higher than a content ratio of nonmetallic element in the first region. At least one of the first region and the second region has an anisotropic shape on the surface.

Abstract: Provided is a method for manufacturing an oxide superconductor, including preparing a coating solution containing alcohols including methanol as a solvent, the coating solution dissolving fluorocarboxylic acid salts including trifluoroacetates, the trifluoroacetates including a metal, barium and copper, the metal being selected from yttrium and lanthanoid metals (provided that cerium, praseodymium, promethium, and ruthenium are excluded); adding a substance of formula: CF2H—(CF2)n—COOH or HOCO—(CF2)m—COOH (wherein n and m represent positive integers) as a crack preventing chemical to the coating solution; forming a gel film on a substrate using the coating solution having the crack preventing chemical added thereto; forming a calcined film by calcining the gel film at an oxygen partial pressure of 3% or less in a process that is maintained at 200° C. or higher for a total time of 7 hours or less; and forming an oxide superconductor film by firing and oxygen anneal of the calcined film.

Abstract: A method of manufacturing an electrode for electrical-discharge surface treatment includes kneading a first electrode material composed of at least one of metal powder and insulating powder and a second electrode material composed of conductive organic bonding agent in which a conductive resin is dissolved or dispersed in a solvent, to fabricate a slurry; molding the slurry, to form a compact; and desiccating the compact at a temperature below a thermal decomposition initiating temperature at which a thermal decomposition of the conductive organic bonding agent starts.

Abstract: According to one embodiment, a non-volatile memory device includes a stacked structure including a memory portion and an electrode having a surface facing the memory portion; and a voltage application portion to apply a voltage to the memory portion to change resistance. The surface includes first and second regions. The first region contains a first nonmetallic element and at least one element of a metallic element, Si, Ga, and As. The second region contains a second nonmetallic element and the at least one element. The second region has a content ratio of the second nonmetallic element higher than that in the first region. A difference in electronegativity between the second nonmetallic element and the at least one element is greater than that between the first nonmetallic element and the at least one element. At least one of the first and second regions has an anisotropic shape.

Abstract: An oxide superconductor film formed on a substrate includes an oxide containing at least one metal M selected from the group consisting of yttrium and lanthanoid metals, provided that cerium, praseodymium, promethium and ruthenium are excluded, and barium and copper, in which the film has an average thickness of 350 nm or more, an average amount of residual carbon of 3×1019 atoms/cc or more, and an amount of residual fluorine in a range of 5×1017 to 1×1019 atoms/cc, and in which, when divided the film into a plurality of regions from a surface of the film or from an interface between the film and the substrate, each region having a thickness of 10 nm, atomic ratios of copper, fluorine, oxygen and carbon between two adjacent regions are in a range of ? times to 5 times.

Abstract: An objective is to provide an electrical-discharge surface-treatment electrode by which a high-coverage zinc coating film can be formed. The electrical-discharge surface-treatment electrode is made by uniformly distributing and compression-molding zinc-based powders including at least one of a pure-metal zinc powder and a metal zinc powder whose surface is oxidized, and zinc-oxide powders whose content rate ranges from 5 to 90 volume percent with respect to the zinc-based powders, to obtain a porosity ranging from 10 to 55 volume percent; then, the zinc coating film is formed using the electrical-discharge surface-treatment electrode.

Abstract: An oxide superconductor with superconduction properties being improved by effectively introducing a pinning center thereinto and its fabrication method are disclosed. The superconductor has a high-crystallinity oxide superconductor film which is formed on a substrate with a <001> direction of crystal grain being oriented almost perpendicularly to the substrate and with (100) planes of neighboring crystal grains being oriented to form an oblique angle ranging from 0 to 4 degrees or 86 to 90 degrees. The film has a multilayer structure including a plurality of high-density magnetic field trap layers stacked in almost parallel to the substrate and a low-density magnetic field trap layer sandwiched therebetween. An average grain boundary width of the high-density trap layers in a cross-section horizontal to the substrate is 80 nm or less. The width is less than an average grain boundary width of the low-density trap layer in its cross-section horizontal to the substrate.

Abstract: A memory array includes a memory cell, the memory cell being disposed between a first line and a second line and being configured by a variable resistor and a rectifier connected in series. The variable resistor is a mixture of silicon oxide (SiO2) and a transition metal oxide, a proportion of the transition metal oxide being set to 55˜80%.

Abstract: According to one embodiment, a nonvolatile memory device includes an electrode and a memory layer. The memory layer is connected to the electrode, and the memory layer has a resistance configured to change due to a current flowing from the electrode. The electrode includes a first layer and a second layer. The first layer includes a metallic element and a first non-metallic element, and the first non-metallic element has a first valence n. The second layer is provided between the first layer and the memory layer, and the second layer includes the metallic element and a second non-metallic element. The second non-metallic element has a second valence (n+1) greater than the first valence n by 1.

Abstract: An oxide superconductor film formed on a substrate includes an oxide containing at least one metal M selected from the group consisting of yttrium and lanthanoid metals, provided that cerium, praseodymium, promethium and ruthenium are excluded, and barium and copper, in which the film has an average thickness of 350 nm or more, an average amount of residual carbon of 3×1019 atoms/cc or more, and an amount of residual fluorine in a range of 5×1017 to 1×1019 atoms/cc, and in which, when divided the film into a plurality of regions from a surface of the film or from an interface between the film and the substrate, each region having a thickness of 10 nm, atomic ratios of copper, fluorine, oxygen and carbon between two adjacent regions are in a range of ? times to 5 times.

Abstract: The present invention relates to a method of preparing an oxide superconducting film, the method includes reacting a metal acetate containing metal M selected from the group consisting of lanthanum, neodymium and samarium with fluorocarboxylic acid having not less than three carbon atoms, reacting barium acetate with fluorocarboxylic acid having two carbon atoms, reacting copper acetate with fluorocarboxylic acid having not less than two carbon atoms, respectively, followed by refining reaction products, dissolving the reaction products in methanol such that a molar ratio of the metal M, barium and copper is 1:2:3 to prepare a coating solution, and coating a substrate with the coating solution to form a gel film, followed by calcining and firing the gel film to prepare an oxide superconducting film.

Abstract: According to one embodiment, a non-volatile memory device includes a stacked structure including a memory portion and an electrode having a surface facing the memory portion; and a voltage application portion to apply a voltage to the memory portion to change resistance. The surface includes first and second regions. The first region contains a first nonmetallic element and at least one element of a metallic element, Si, Ga, and As. The second region contains a second nonmetallic element and the at least one element. The second region has a content ratio of the second nonmetallic element higher than that in the first region. A difference in electronegativity between the second nonmetallic element and the at least one element is greater than that between the first nonmetallic element and the at least one element. At least one of the first and second regions has an anisotropic shape.

Abstract: According to one embodiment, a non-volatile memory device includes a stacked structure and a voltage application portion. The stacked structure includes a memory portion, and an electrode stacked with the memory portion and having a surface having a portion facing the memory portion. The voltage application portion applies a voltage to the memory portion to cause a change in a resistance in the memory portion to store information. The surface includes a first region and a second region. The first region contains at least one of a metallic element, Si, Ga, and As. The first region is conductive. The second region contains at least one of the metallic element, Si, Ga, and As, and has a content ratio of nonmetallic element higher than a content ratio of nonmetallic element in the first region. At least one of the first region and the second region has an anisotropic shape on the surface.

Abstract: This disclosure provides an information recording device for use in a non-volatile information recording/reproduction system having a high recording density, the device including a resistive material having less phase separation or the like during switching. This disclosure also provides an information recording/reproduction system including the device. This disclosure provides an information recording device including: a pair of electrodes; and a recording layer between the electrodes, the recording layer recording information by its resistance change, the recording layer including at least one of (a) M3Oz and (b) AxM3—x0z as a main component, in (a) and (b), z being a value representing oxygen deficiency from z=4.5, and in (b), x satisfying 0.00<x?0.03. This disclosure also provides an information recording/reproduction system including the device.

Abstract: An oxide superconductor film formed on a substrate includes an oxide containing at least one metal M selected from the group consisting of yttrium and lanthanoid metals, provided that cerium, praseodymium, and promethium are excluded, and barium and copper, in which the film has an average thickness of 350 nm or more, an average amount of residual carbon of 3×1019 atoms/cc or more, and an amount of residual fluorine in a range of 5×1017 to 1×1019 atoms/cc, and in which, when divided the film into a plurality of regions from a surface of the film or from an interface between the film and the substrate, each region having a thickness of 10 nm, atomic ratios of copper, fluorine, oxygen and carbon between two adjacent regions are in a range of ? times to 5 times.

Abstract: A memory array includes a memory cell, the memory cell being disposed between a first line and a second line and being configured by a variable resistor and a rectifier connected in series. The variable resistor is a mixture of silicon oxide (SiO2) and a transition metal oxide, a proportion of the transition metal oxide being set to 55˜80%.

Abstract: A stator coil includes a belt-shaped winding band and a same-layer bridging portion. The winding band makes one or more rounds, while turning back in the axial direction a plurality of conductor wires which are aligned in parallel at a pitch of electric angle ? (pi). The same-layer bridging portion connects a pair of the conductor wires which are of the same phase at the end portion of the winding and which are arranged in the same layer of the slot. Such arrangement enables forming a compact multi-phase stator coil.

Abstract: The present invention relates to a method of preparing an oxide superconducting film, the method includes reacting a metal acetate containing metal M selected from the group consisting of lanthanum, neodymium and samarium with fluorocarboxylic acid having not less than three carbon atoms, reacting barium acetate with fluorocarboxylic acid having two carbon atoms, reacting copper acetate with fluorocarboxylic acid having not less than two carbon atoms, respectively, followed by refining reaction products, dissolving the reaction products in methanol such that a molar ratio of the metal M, barium and copper is 1:2:3 to prepare a coating solution, and coating a substrate with the coating solution to form a gel film, followed by calcining and firing the gel film to prepare an oxide superconducting film.

Abstract: An objective is to provide an electrical-discharge surface-treatment electrode by which a high-coverage zinc coating film can be formed. The electrical-discharge surface-treatment electrode is made by uniformly distributing and compression-molding zinc-based powders including at least one of a pure-metal zinc powder and a metal zinc powder whose surface is oxidized, and zinc-oxide powders whose content rate ranges from 5 to 90 volume percent with respect to the zinc-based powders, to obtain a porosity ranging from 10 to 55 volume percent; then, the zinc coating film is formed using the electrical-discharge surface-treatment electrode.

Abstract: The present invention relates to a method of preparing an oxide superconducting film, the method includes reacting a metal acetate containing metal M selected from the group consisting of lanthanum, neodymium and samarium with fluorocarboxylic acid having not less than three carbon atoms, reacting barium acetate with fluorocarboxylic acid having two carbon atoms, reacting copper acetate with fluorocarboxylic acid having not less than two carbon atoms, respectively, followed by refining reaction products, dissolving the reaction products in methanol such that a molar ratio of the metal M, barium and copper is 1:2:3 to prepare a coating solution, and coating a substrate with the coating solution to form a gel film, followed by calcining and firing the gel film to prepare an oxide superconducting film.