Abstract: Providing a manufacture method of a gate insulating film formed on an SiC substrate having thereon an SiON film, achieving both of the maintenance of an SiON film structure and the formation of a high-quality insulating film. A manufacture method of a gate insulating film for an SiC semiconductor device comprises preparing a transfer plate comprising a transfer substrate and an insulating film formed thereon; preparing a surface-processed substrate comprising an SiC substrate and an epitaxial silicon oxynitride film as an atomic monolayer formed thereon; and transferring the insulating film from the transfer plate onto the silicon oxynitride film of the surface-processed substrate to produce the surface-processed substrate having a transferred insulating film.

Abstract: A method of manufacturing a silicon carbide semiconductor device having a contact formed between a p-type silicon carbide semiconductor body and a metal electrode, includes forming on a surface of the p-type silicon carbide semiconductor body, a graphene layer so as to reduce a potential difference generated in a conjunction interface between the p-type silicon carbide semiconductor body and the metal electrode; forming an insulator layer comprising a hexagonal boron nitride on a surface of the graphene layer; and forming the metal electrode on a surface of the insulation layer.

Abstract: A heat insulating sheet includes, a first sheet, a first heat insulator disposed on a main surface of the first sheet and including a first xerogel, a second heat insulator disposed on the main surface of the first sheet apart from the first heat insulator and including a second xerogel, and a second sheet disposed on the main surface of the first sheet to cover the first and second heat insulators. A first region of the heat insulating sheet provided between the first and second heat insulators viewing in a direction perpendicular to the main surface has an extensible rate larger than an extensible rate of each of the first and second heat insulators. The heat insulating property of this heat insulating sheet hardly degrades.

Abstract: A bag sealing tape which can be repeatedly used without damaging a banded object such as a bag or the like when the object is opened, and which does not have to be separated for disposal; and a banding device and a banding method using the bag sealing tape. The bag sealing tape includes adhesion zones and non-adhesion zones, and the adhesion zones are disposed on the surface of a base film in a stepping stone manner in a length direction of the base film.

Abstract: In a trench deeper than a thickness of a p-type base layer and configured by a first trench and a second trench, a second trench positioned at a lower portion is configured by a third trench and a fourth trench. A width of the second trench along an X direction is expanded more than the first trench positioned above the second trench. Along the X direction, the extent to which the second trench is expanded differs for the third trench and the fourth trench. Thus, a width of the lower portion of the trench differs along a Y direction, enabling reduced gate capacitance compared to uniform expansion along a transverse direction of the trench. Further, ON voltage may be reduced and switching capability may be improved.

Abstract: The present invention provides, inter alia, a method for producing a masterbatch in which the dispersibility of microfibrillated plant fibers is further increased to obtain excellent processability and improved rubber properties such as fuel economy, tensile strength, and elongation at break. The present invention relates to a method for producing a masterbatch, the method including step (I) of mixing a rubber latex with microfibrillated plant fibers oxidized with an N-oxyl compound to obtain a mixture, and coagulating the mixture by adjusting its pH to 2 to 6.

Abstract: Provided is a manufacturing method for manufacturing a SiC substrate having a flattened surface, including etching the surface of the SiC substrate by irradiating the surface of the SiC substrate with atomic hydrogen while the SiC substrate having an off angle is heated. In the etching, the SiC substrate may be heated within a range of 800° C. or higher and 1200° C. or lower.

Abstract: An object of the present invention is to provide a copolymer having the characteristic of developing high viscosity, and lowering its viscosity with an increase in rate of shear, particularly a copolymer having the characteristic of developing viscosity, and lowering its viscosity with an increase in rate of shear even in an aqueous coating composition that contains a surfactant. The present invention provides a copolymer obtainable by copolymerization of a monomer component (m) that includes: (m-1), a macromonomer having (i) a backbone that comprises a polymer chain having a number average molecular weight of 1,000 to 10,000 obtainable by polymerizing a monomer component (I) that contains 5 to 100 mass % of a C4-C24 alkyl-containing polymerizable unsaturated monomer (a), and (ii) a polymerizable unsaturated group; and (m-2) a polymerizable unsaturated monomer containing a hydrophilic group.

Abstract: A battery includes a case, at least one of a first battery cell and a second battery cell disposed in the case, and a graphite sheet disposed at at least one of a position between the case and the first battery cell and a position between the first battery cell and the second battery cell. The graphite sheet has a terminal portion for taking out an electrical signal.

Abstract: To improve the oil separation performance in an oil separation device for an internal combustion engine. The oil separation device (10) comprises a gas liquid separation passage (56) internally defined by a lower wall, an upper wall and a pair of side walls, and extending in a horizontal direction, a gas inlet (54) and a gas outlet (63) provided on either end of the gas liquid separation passage, a plurality of lower partition walls (56H) projecting upward from the lower wall, and a plurality of upper partition walls (56J) projecting downward from the upper wall. The lower partition walls and the upper partition wall are tilted with respective the length wise direction in plan view so as to define a spiral passage. The lower wall is inclined with respect to a horizontal plane such that an upstream part of the lower wall is lower than a downstream part of the lower wall with respect to a direction of the swirl flow.

Abstract: A driver apparatus includes a vibrator and a drive circuit configured to input a drive signal to the vibrator to vibrate the vibrator. The drive circuit includes an output amplifier configured to output the drive signal to the vibrator based on a monitor signal, a power supply unit configured to supply a power supply voltage, and a power supply voltage controller configured to control the power supply voltage and to supply the controlled power supply voltage to the output amplifies. This driver apparatus can increase amplitude of the vibration of the vibrator, and can increase detection sensitivity to a physical quantity detection apparatus including the driver apparatus.

Abstract: Providing a manufacture method of a gate insulating film formed on an SiC substrate having thereon an SiON film, achieving both of the maintenance of an SiON film structure and the formation of a high-quality insulating film. A manufacture method of a gate insulating film for an SiC semiconductor device comprises preparing a transfer plate comprising a transfer substrate and an insulating film formed thereon; preparing a surface-processed substrate comprising an SiC substrate and an epitaxial silicon acid nitride film as an atomic monolayer formed thereon; and transferring the insulating film from the transfer plate onto the silicon acid nitride film of the surface-processed substrate to produce the surface-processed substrate having a transferred insulating film.

Abstract: A composite sheet includes heat-insulating sheet (13) including a fiber sheet (11) made of fibers and a xerogel (12) held between the fibers, and a first electrical-insulation film (14) disposed on surface (31) of heat-insulating sheet (13). Fiber sheet (11) is fusion-bonded to surface (31) of first electrical-insulation film (14).

Abstract: A semiconductor device includes: a semiconductor substrate having an element; a front surface electrode connected to the element; a rear surface electrode connected to the element; a protective film disposed on the front surface of the semiconductor substrate in a separation region; and a temperature sensor disposed on a front surface side of the semiconductor substrate. The front surface electrode is divided into multiple pieces along at least two directions with the protective film. The separation region includes an opposing region located between opposing sides of divided pieces of the front surface electrode adjacent to each other, and an intersection region, at which the opposing region intersects. The temperature sensor is disposed in only the opposing region.

Abstract: Provided are a filament winding method and a filament winding apparatus, in which, when a new bobbin is mounted on a bobbin rotation driving device, the control device is programmed to rotate the bobbin and oscillate a dancer while maintaining a state where a distal end of filament unwound through the dancer is fixed further beyond the dancer and the filament is stretched. The control device is programmed to obtain a bobbin diameter of the bobbin mounted on the bobbin rotation driving device based on a length of the dancer, an oscillation angle of the dancer, and a rotation angle of the bobbin.

Abstract: A bag sealing tape which can be repeatedly used without damaging a banded object such as a bag or the like when the object is opened, and which does not have to be separated for disposal; and a banding device and a banding method using the bag sealing tape. The bag sealing tape includes adhesion zones and non-adhesion zones, and the adhesion zones are disposed on the surface of a base film in a stepping stone manner in a length direction of the base film.

Abstract: Between a source electrode (25) of a main device (24) and a current sensing electrode (22) of a current detection device (21), a resistor for detecting current is connected. Dielectric withstand voltage of gate insulator (36) is larger than a product of the resistor and maximal current flowing through the current detection device (21) with reverse bias. A diffusion length of a p-body region (32) of the main device (24) is shorter than that of a p-body (31) of the current detection device (21). A curvature radius at an end portion of the p-body region (32) of the main device (24) is smaller than that of the p-body (31) of the current detection device (21). As a result, at the inverse bias, electric field at the end portion of the p-body region (32) of the main device (24) becomes stronger than that of the p-body region (31) of the current detection device (21). Consequently, avalanche breakdown tends to occur earlier in the main device 24 than the current detection device (21).

Abstract: In a trench deeper than a thickness of a p-type base layer and configured by a first trench and a second trench, a second trench positioned at a lower portion is configured by a third trench and a fourth trench. A width of the second trench along an X direction is expanded more than the first trench positioned above the second trench. Along the X direction, the extent to which the second trench is expanded differs for the third trench and the fourth trench. Thus, a width of the lower portion of the trench differs along a Y direction, enabling reduced gate capacitance compared to uniform expansion along a transverse direction of the trench. Further, ON voltage may be reduced and switching capability may be improved.

Abstract: A method of manufacturing a silicon carbide semiconductor device having a contact formed between a p-type silicon carbide semiconductor body and a metal electrode, includes forming on a surface of the p-type silicon carbide semiconductor body, a graphene layer so as to reduce a potential difference generated in a conjunction interface between the p-type silicon carbide semiconductor body and the metal electrode; forming an insulator layer comprising a hexagonal boron nitride on a surface of the graphene layer; and forming the metal electrode on a surface of the insulation layer.