Abstract: A grease composition contains a base oil, a thickener, and a conductive additive (A), the base oil is a trimellitic acid ester, the conductive additive (A) is a mixture containing sepiolite and bentonite and is an organically modified additive, and an amount of the conductive additive (A) with respect to a total amount of the base oil, the thickener, and the conductive additive (A) is 3 to 10 mass %.

Abstract: In a semiconductor device having a main cell region and a sense cell region, a main contact trench and a sense contact trench extend in one direction. When viewed from a stacking direction of a drift layer and a body layer, in the one direction, the main contact trench and a first impurity region disposed in the main cell region protrude more than a main upper electrode toward a sense upper electrode, and the sense contact trench and the first impurity region disposed in the sense cell region protrude more than the sense upper electrode toward the main upper electrode.

Abstract: A semiconductor device has a cell portion and a peripheral portion. The cell portion includes a semiconductor substrate, a first impurity region, a second impurity region, and a contact region for the second impurity region. The semiconductor substrate has a drift layer. The first impurity region is on the drift layer. The second impurity region is on a surface layer portion of the first impurity region. A length of the cell portion is identical to a length of the second impurity region in one direction. The contact region extends from the cell portion to the peripheral portion. A length of a section of the contact region at the peripheral section in the one direction is defined as a protruding length, and a length of the second impurity region is defined as a second-impurity-region length. A ratio of the protruding length to the second-impurity-region length is 0.1 or smaller.

Abstract: In a semiconductor device, vertical semiconductor switching elements having a same structure are provided in a main cell region and a sense cell region. The sense cell region is defined as a quadrangular region surrounding an operating region of the semiconductor switching element formed as a sense cell, with (i) a lateral dimension of the sense cell region defined along one direction of the main cell region, and (ii) a longitudinal dimension of the sense cell region defined along a longitudinal direction that is orthogonal to the lateral direction. The longitudinal dimension of the sense cell region is equal to or greater than the lateral dimension of the sense cell region.

Abstract: An uncertainty estimation method including: acquiring first variable values, which are a plurality of variable values included in a function indicating a relationship between a measurement dimension and a maximum permissible length measurement error when a predetermined measurement condition value of a coordinate measuring machine is a first value, and second variable values, which are the plurality of variable values occurring when the measurement condition value is a second value; calculating a maximum permissible length measurement error corresponding to a third value by calculating the variable values occurring when the measurement condition value is the third value on the basis of the plurality of first variable values and the plurality of second variable values; and estimating the measurement uncertainty of the coordinate measuring machine on the basis of the calculated maximum permissible length measurement error.

Abstract: A measurement point determination method for determining the number or an arrangement of measurement points for a measurement apparatus that performs measurement processing of a measurement item at a plurality of measurement points, the method comprises the steps of acquiring a minimum value and a maximum value of the number of measurement points, acquiring a target value of uncertainty for the measurement item of the measurement apparatus, estimating uncertainties when the measurement item is measured by the measurement apparatus using two or more of the numbers of measurement points between the minimum value and the maximum value of the number of measurement points, and determining the number of measurement points of the measurement apparatus on the basis of the target value and the estimated uncertainties.

Abstract: In a semiconductor device having a main cell region and a sense cell region, a main contact trench and a sense contact trench extend in one direction. When viewed from a stacking direction of a drift layer and a body layer, in the one direction, the main contact trench and a first impurity region disposed in the main cell region protrude more than a main upper electrode toward a sense upper electrode, and the sense contact trench and the first impurity region disposed in the sense cell region protrude more than the sense upper electrode toward the main upper electrode.

Abstract: A coefficient-of-thermal-expansion measuring device includes: a temperature detector detecting an object's temperature; an optical interferometer measuring an object's length using single-wavelength light; an actual data acquiring unit changing the object's temperature to temperatures and acquiring actual data of the length measured by the optical interferometer at each temperature; a data set generating unit generating pieces of verification data for each actual data by setting an order of interference within a predetermined range, selecting one piece of verification data at each temperature, and generating data sets each containing the selected piece of verification data, the data sets having different combinations of selection of the pieces of verification data; and a judging unit calculating a linear approximation function for each data set, and judging, using an evaluation index value based on differences of the verification data in each data set from the linear approximation function, applicability of e

Abstract: A coefficient-of-thermal-expansion measuring device includes temperature control device, optical interferometer, and control device including: an actual data acquiring unit sequentially changing an object's temperature and acquiring actual data measured by the optical interferometer at each temperature; a data set generating unit generating pieces of verification data by setting an order of interference of the actual data within a predetermined range, selecting one piece of verification data at each temperature, and generating data sets each containing the selected piece of verification data at each temperature; and a judging unit deriving approximation functions with different orders from each data set, determining an evaluation index value based on differences of verification data from each approximation function, selecting a candidate data set with the smallest evaluation index value for each approximation function, and determining whether the candidate data set is the same for each approximation function

Abstract: A step gauge and a reference gauge block are placed in a temperature-controlled chamber in parallel with each other. A temperature of the step gauge is changed to a first temperature and a second temperature using a measurement-target temperature adjuster and the temperature-controlled chamber. A distance between a first surface and a second surface of the step gauge is relatively measured at each of the first and second temperatures with reference to a distance between a first reference surface and a second reference surface of the reference gauge block. A coefficient of thermal expansion of the measurement target is calculated from the length of the measurement target at the first temperature and the length of the measurement target at the second temperature.

Abstract: A measurement point determination method for determining the number or an arrangement of measurement points for a measurement apparatus that performs measurement processing of a measurement item at a plurality of measurement points, the method comprises the steps of acquiring a minimum value and a maximum value of the number of measurement points, acquiring a target value of uncertainty for the measurement item of the measurement apparatus, estimating uncertainties when the measurement item is measured by the measurement apparatus using two or more of the numbers of measurement points between the minimum value and the maximum value of the number of measurement points, and determining the number of measurement points of the measurement apparatus on the basis of the target value and the estimated uncertainties.

Abstract: In a spherical shape measurement method for measuring a surface shape, a sphere to be measured is made freely rotatable. The partial spherical shape of each measurement area, which is established so as to have an area overlapping with another measurement area adjacent to each other, is measured at each rotation position, and the surface shape is measured by joining the partial spherical shapes of the measurement areas by a stitching operation based on the shape of the overlapping area. In the state of detaching the sphere from the sphere hold mechanism to which the sphere is freely attachable and detachable, the sphere support table holds the sphere. The sphere is re-held at a different position, so that the shape of the entire sphere can be measured with high accuracy.

Abstract: A measurement target and a reference gauge are placed in parallel in an inside of a temperature-controlled chamber. After an interior temperature of the temperature-controlled chamber is set at a first temperature, a relative measurement of a length from a first surface to a second surface of the measurement target is performed with reference to a length from a first reference surface to a second reference surface of the reference gauge. Then, the interior temperature of the temperature-controlled chamber is set at a second temperature and a relative measurement of the length from the first surface to the second surface is similarly performed with reference to the length from the first reference surface to the second reference surface. A CTE of the measurement target is calculated based on the length of the measurement target at the first temperature and the length of the measurement target at the second temperature.

Abstract: A coefficient-of-thermal-expansion measuring device includes: a temperature detector detecting an object's temperature; an optical interferometer measuring an object's length using single-wavelength light; an actual data acquiring unit changing the object's temperature to temperatures and acquiring actual data of the length measured by the optical interferometer at each temperature; a data set generating unit generating pieces of verification data for each actual data by setting an order of interference within a predetermined range, selecting one piece of verification data at each temperature, and generating data sets each containing the selected piece of verification data, the data sets having different combinations of selection of the pieces of verification data; and a judging unit calculating a linear approximation function for each data set, and judging, using an evaluation index value based on differences of the verification data in each data set from the linear approximation function, applicability of e

Abstract: A coefficient-of-thermal-expansion measuring device includes temperature control device, optical interferometer, and control device including: an actual data acquiring unit sequentially changing an object's temperature and acquiring actual data measured by the optical interferometer at each temperature; a data set generating unit generating pieces of verification data by setting an order of interference of the actual data within a predetermined range, selecting one piece of verification data at each temperature, and generating data sets each containing the selected piece of verification data at each temperature; and a judging unit deriving approximation functions with different orders from each data set, determining an evaluation index value based on differences of verification data from each approximation function, selecting a candidate data set with the smallest evaluation index value for each approximation function, and determining whether the candidate data set is the same for each approximation function

Abstract: A step gauge and a reference gauge block are placed in a temperature-controlled chamber in parallel with each other. A temperature of the step gauge is changed to a first temperature and a second temperature using a measurement-target temperature adjuster and the temperature-controlled chamber. A distance between a first surface and a second surface of the step gauge is relatively measured at each of the first and second temperatures with reference to a distance between a first reference surface and a second reference surface of the reference gauge block. A coefficient of thermal expansion of the measurement target is calculated from the length of the measurement target at the first temperature and the length of the measurement target at the second temperature.

Abstract: A measurement target and a reference gauge are placed in parallel in an inside of a temperature-controlled chamber. After an interior temperature of the temperature-controlled chamber is set at a first temperature, a relative measurement of a length from a first surface to a second surface of the measurement target is performed with reference to a length from a first reference surface to a second reference surface of the reference gauge. Then, the interior temperature of the temperature-controlled chamber is set at a second temperature and a relative measurement of the length from the first surface to the second surface is similarly performed with reference to the length from the first reference surface to the second reference surface. A CTE of the measurement target is calculated based on the length of the measurement target at the first temperature and the length of the measurement target at the second temperature.

Abstract: A temperature-controlled bath capable of swiftly changing the temperature of a sample to a target temperature and maintaining the temperature of the sample at a fixed temperature after the temperature change is provided. A temperature-controlled bath includes a temperature changing means, a temperature-controlled chamber, a sample holding chamber, and connection cut-off means. The temperature changing means is disposed in the temperature-controlled chamber, and the temperature of the temperature-controlled chamber is adjusted by the temperature changing means. The sample holding chamber is separated from the temperature-controlled chamber by a thermally conducive wall, and contains a sample therein. The connection cut-off means change a connection between the temperature-controlled chamber and the sample holding chamber to a connected state or a cut-off state.

Abstract: A partial spherical shape of each measurement area of a sphere to be measured, which is established so as to have an area overlapping with another measurement area adjacent to each other, is measured at each rotation position, and the surface shape is measured by joining the partial spherical shapes of the measurement areas by a stitching operation based on the shape of the overlapping area. The position at which the sphere is measured is changed and re-held. A positional displacement between half parts of the sphere before and after re-holding, which is caused by an effect of an error owing to the re-holding, is separated into three rotational components. Magnitudes of the three rotational components are quantified by image correlation and the positional displacement corrected. Then, the stitching operation is performed to measure the entire part of the sphere surface.

Abstract: A spherical-form measuring apparatus includes a turntable 5, a holding unit 10 for holding the sphere 20, and a probe 6 for measuring a contour of a sphere part 22 of the sphere 20. The holding unit 10 includes a base part 12, a vertical holding part 14 and an inclined holding part 16 which are placed at separate positions on the base part 12. The vertical holding part 14 holds the stem part 24 of the sphere 20 with it set in a direction perpendicular to the turntable 5. The inclined holding part 16 holds the stem part 24 with it set in a direction at an angle. The vertical and inclined holding part 14, 16 are disposed such that their axial lines meet at an intersection point P and such that the distance from the point P to the vertical holding part 14 agrees with the distance from the point P to the inclined holding part 16.