Abstract: There is provided an imaging apparatus including an imaging unit that captures a moving image and a communication unit that performs wireless communication. The imaging apparatus further includes a control unit that controls an imaging function and a transmission function for transmitting an image signal indicating a captured image that has been captured, on the basis of a time setting set in advance. The control unit at least controls switching between a standby state where the imaging function is not working and an operating state where the imaging function is working, based on the time setting.

Abstract: A capacitor includes a first electrode; a second electrode facing the first electrode; and a dielectric layer which is disposed between the first electrode and the second electrode and which is in contact with the first electrode. The first electrode includes a first portion including an interface between the first electrode and the dielectric layer, the dielectric layer includes a second portion including the interface, and the first portion and the second portion each contain silicon. A concentration distribution of the silicon along a thickness direction of the first portion and the second portion includes a convex portion intersecting the interface.

Abstract: What is provided is a novel and improved dross removal device capable of more efficiently collecting a bath surface dross using a dross robot, and a dross removal method. In order to solve the problem, according to an aspect of the present invention, there is provided a dross removal device including: a dross robot that is configured to collect a bath surface dross present on a bath surface of a coating bath; a dross sensor that is configured to measure an intensity of infrared light from the bath surface of the coating bath; a dross sensor control device that is configured to specify a position of the bath surface dross according to a temporal change amount in the intensity of the infrared light; and a dross robot control device that is configured to cause the dross robot to collect the bath surface dross at the position specified by the dross sensor control device.

Abstract: There is provided an imaging apparatus including: an imaging unit configured to capture a moving image; a communication unit configured to perform wireless communication; and a control unit configured to control an imaging function and control a transmission function for transmitting an image signal indicating a captured image that has been captured, on the basis of time setting set in advance. The control unit at least controls switching between a standby state where the imaging function is not working and an operating state where the imaging function is working, in accordance with the time setting.

Abstract: Techniques for replacing nanopores within a nanopore based sequencing chip are provided. A first electrolyte solution is added to the external reservoir of the sequencing chip, introducing an osmotic imbalance between the reservoir and the well chamber located on the opposite side of a lipid bilayer membrane. The osmotic imbalance causes the membrane to change shape, and a nanopore within the membrane to be ejected. A second electrolyte solution is then added to the external reservoir to provide replacement nanopores and to restore the membrane shape. The replacement nanopores can be inserted into the membrane, effectively replacing the initial pore without causing the destruction of the membrane.

Abstract: An imaging device for use on-board a reconnaissance vehicle comprises an image capturing unit configured to capture images of a photographic area. A control unit communicates via a serial communications interface with a control body unit of the reconnaissance vehicle, and operates in an image photographing mode that receives control information from the control body unit of the reconnaissance vehicle via the serial communications interface and in an image transfer mode that transfers the images to the control body unit of the reconnaissance vehicle via the serial communications interface in accordance with a data transfer protocol. The control unit responds to detecting mode switching conditions to switch autonomously from the image photographing mode to the image transfer mode. Only a single serial communications interface is needed both to control the imaging device and to transfer the captured images from the imaging device in the image transfer mode.

Abstract: A semiconductor device includes a substrate; a first nitride semiconductor layer above the substrate; a second nitride semiconductor layer on the first nitride semiconductor layer; an ohmic electrode above the substrate; and a contact layer in contact with at least a part of the ohmic electrode, the contact layer containing silicon and chlorine. The second nitride semiconductor layer has a wider band gap than the first nitride semiconductor layer. A two-dimensional electron gas channel is formed in the first nitride semiconductor layer at a heterointerface between the first nitride semiconductor layer and the second nitride semiconductor layer. A silicon concentration has a higher peak value than a chlorine concentration in the contact layer.

Abstract: There is realized an imaging device that monitors a communication status or the like, and executes switching processing from an MSC mode to a PTP mode in a case where a pre-defined condition is satisfied. There is provided a control unit configured to execute switching processing between a PTP communication mode applied with a PTP protocol, and an MSC mode, which is a communication mode according to a mass storage class (MSC). For example, in a case where MSC mode communication processing has not been executed for a specified time or more, a case where a movement indicating start of image capturing is detected, or the like, the control unit executes switching processing from the MSC mode to the PTP mode. After switching to the PTP mode, it is possible to execute imaging by inputting an image capturing control command from a host device.

Abstract: A semiconductor device includes: a substrate; a p-type GaN layer that is formed above the substrate, and includes GaN containing p-type impurities; and a Ti film formed on a surface of the p-type GaN layer. The Ti film includes a Ti film containing no nitrogen and a nitrogen-containing Ti film that is less chemically active than such Ti film. The nitrogen-containing Ti film continuously surrounds an outer periphery of the Ti film containing no nitrogen in a planar view.

Abstract: An information processing device that operates in an imaging device mounted on a mobile unit, and notifies the mobile unit of failed imaging, when imaging performed by the imaging device has failed.

Abstract: A capacitor includes a first electrode; a second electrode facing the first electrode; and a dielectric layer which is disposed between the first electrode and the second electrode and which is in contact with the first electrode. The first electrode includes a first portion including an interface between the first electrode and the dielectric layer, the dielectric layer includes a second portion including the interface, and the first portion and the second portion each contain silicon. A concentration distribution of the silicon along a thickness direction of the first portion and the second portion includes a convex portion intersecting the interface.

Abstract: A damping apparatus includes a damping unit 30 composed of a plurality of damping plates 36 having plasticity, a holding member 31 holding at least one ends of the damping plates 36 in a manner to allow deflection of the damping plates 36 with the damping plates 36 laminated together, and a contact member 33 provided at a position spaced from a holding position of the holding member 31, and attached to an outermost one of the damping plates 36, or extending through and held by the damping plates 36 in such a manner that it can be brought into contact with the outermost one of the damping plates 36 and can be moved in an extending direction thereof. The damping unit 30 is supported by a support mechanism 2 in such a manner that the contact member 33 can be brought into contact with an object W.

Abstract: This disclosure provides a biochip comprising a plurality of wells. The biochip includes a membrane that is disposed in or adjacent to an individual well of the plurality of wells. The membrane comprises a nanopore, and the individual well comprises an electrode that detects a signal upon ionic flow through the pore in response to a species passing through or adjacent to the nanopore. The electrode can be a non-sacrificial electrode. A lipid bilayer can be formed over the plurality of wells using a bubble.

Abstract: The present invention is to provide an imaging apparatus superior in operability and visibility at the time of setting and adjusting functions thereof. The apparatus includes GUI screen image generating means for generating a GUI screen image for operating the imaging apparatus to display the GUI screen image on image display means; operating means for operating the GUI screen image displayed on the image display means; controlling means for controlling the imaging apparatus in accordance with the operation of the GUI screen image by the operating means; storing means for storing hierarchy type main menu information; menu generating means; and menu editing means capable of editing the unique menu information generated by the menu generating means.

Abstract: A biochip for molecular detection and sensing is disclosed. The biochip includes a substrate. The biochip includes a plurality of discrete sites formed on the substrate having a density of greater than five hundred wells per square millimeter. Each discrete site includes sidewalls disposed on the substrate to form a well. Each discrete site includes an electrode disposed at the bottom of the well. In some embodiments, the wells are formed such that cross-talk between the wells is reduced. In some embodiments, the electrodes disposed at the bottom of the wells are organized into groups of electrodes, wherein each group of electrodes shares a common counter electrode. In some embodiments, the electrode disposed at the bottom of the well has a dedicated counter electrode. In some embodiments, surfaces of the sidewalls are silanized such that the surfaces facilitate the forming of a membrane in or adjacent to the well.

Abstract: This disclosure provides a biochip comprising a plurality of wells. The biochip includes a membrane that is disposed in or adjacent to an individual well of the plurality of wells. The membrane comprises a nanopore, and the individual well comprises an electrode that detects a signal upon ionic flow through the pore in response to a species passing through or adjacent to the nanopore. The electrode can be a non-sacrificial electrode. A lipid bilayer can be formed over the plurality of wells using a bubble.

Abstract: A semiconductor device includes: a substrate; a p-type GaN layer that is formed above the substrate, and includes GaN containing p-type impurities; and a Ti film formed on a surface of the p-type GaN layer. The Ti film includes a Ti film containing no nitrogen and a nitrogen-containing Ti film that is less chemically active than such Ti film. The nitrogen-containing Ti film continuously surrounds an outer periphery of the Ti film containing no nitrogen in a planar view.

Abstract: A damping apparatus includes a damping unit 30 composed of a plurality of damping plates 36 having plasticity, a holding member 31 holding at least one ends of the damping plates 36 in a manner to allow deflection of the damping plates 36 with the damping plates 36 laminated together, and a contact member 33 provided at a position spaced from a holding position of the holding member 31, and attached to an outermost one of the damping plates 36, or extending through and held by the damping plates 36 in such a manner that it can be brought into contact with the outermost one of the damping plates 36 and can be moved in an extending direction thereof. The damping unit 30 is supported by a support mechanism 2 in such a manner that the contact member 33 can be brought into contact with an object W.

Abstract: This disclosure provides a biochip comprising a plurality of wells. The biochip includes a membrane that is disposed in or adjacent to an individual well of the plurality of wells. The membrane comprises a nanopore, and the individual well comprises an electrode that detects a signal upon ionic flow through the pore in response to a species passing through or adjacent to the nanopore. The electrode can be a non-sacrificial electrode. A lipid bilayer can be formed over the plurality of wells using a bubble.

Abstract: A nitride semiconductor device according to the present disclosure includes a substrate, a p-type GaN layer formed on a main surface of the substrate and made of AlxInyGa1-x-yN containing p-type impurities, where 0?X<1, 0?Y<1, and a Ti film formed on the p-type GaN layer. The Ti film is in a coherent or metamorphic state with respect to the p-type GaN layer.