Abstract: A power conversion device includes a housing, a door, a power converter, and a movable portion. Housing includes an opening and an internal space. Door is connected to housing. Power converter is disposed in internal space with a gap from housing. Movable portion is disposed in internal space. Movable portion is configured to be detachable with respect to power converter. Door is configured to be switchable between an open state in which opening is open and a closed state in which opening (OP) is closed. Power converter is configured to be grounded via movable portion in the open state of door. Power converter is configured to be disposed with a gap from movable portion in the closed state of door.

Abstract: A memory system includes a memory device including memory chips and a controller. The controller includes first processors configured to perform first processing of network packets in at least one of a network layer and a transport layer of a network protocol, and second processors configured to perform second processing with respect to the memory chips. The controller is configured to extract tag information from a header of a network packet, select one of the first processors associated with a first memory chip that is identified based on the tag information, and control the selected one of the first processors to perform the first processing with respect to the network packet, which causes one of the second processors associated with the first memory chip to perform the second processing based on a payload of the network packet.

Abstract: A power converter is provided that includes a reactor that is improved in effect of cooling a core and a winding. The power converter includes: a cooling member having a first cooling surface; and a reactor including a core portion and a winding portion. The core portion is a rectangular parallelepiped and disposed on the first cooling surface that is larger in area than the core portion in a plan view. The winding is wound around the core portion and the cooling member. The power converter further includes a power conversion module connected to one end of the winding portion.

Abstract: A connection structure includes a circuit board, an insulating member, a housing, and a conductive wire. The insulating member includes a first portion and a second portion. The first portion is fixed to the circuit board. The second portion faces the first portion. The second portion is fixed to the housing. The housing includes a grounded contact. The conductive wire electrically connects the circuit board and the housing while being wound around the insulating member. A shortest distance along a surface of the housing from a position where the conductive wire and the housing are connected to the contact is shorter than a shortest distance along a surface of the housing from the second portion of the insulating member to the contact.

Abstract: A short-circuit detector detects an arm short circuit or a load short circuit, based on the magnitude of the gate current and the magnitude of the gate charge amount. The short-circuit detector includes: a gate current determinator that compares the magnitude of the gate current with at least one reference value; a gate charge amount determinator that compares the magnitude of the gate charge amount with at least one reference value; and a short-circuit detection logical operation circuitry that executes a logical operation of an output signal of the gate current determinator and an output signal of the gate charge amount determinator.

Abstract: A semiconductor device includes a power switching element and a drive device to drive the power switching element. The drive device includes a voltage source, a switching element, a capacitor connected in parallel to the voltage source with the switching element being interposed, a switching element provided between the capacitor and a gate terminal of the power switching element, a first comparison device to output a result of comparison between a voltage of the capacitor and a reference value VQR, a second comparison device to output a result of comparison between a gate voltage of the power switching element and a reference value VR, and a short-circuit determination unit that makes determination as to a short circuit of the power switching element based on an output signal from the first comparison device and an output signal from the second comparison device.

Abstract: A power semiconductor module includes at least one upper arm provided between a positive electrode line and a node and including a power semiconductor device and a freewheeling diode connected in parallel, at least one lower arm provided between a negative electrode line and the node and including a power semiconductor device and a freewheeling diode connected in parallel, and a snubber circuit provided between the positive electrode line and the negative electrode line. The snubber circuit includes a snubber capacitor and a snubber resistor connected in series. At least one control terminal outputs a voltage representing the temperature of the snubber resistor or a voltage related to the temperature of the snubber resistor to a driver that drives the power semiconductor device.

Abstract: A drive circuit drives a power semiconductor element including a control terminal, a first main electrode, and a second main electrode. The drive circuit includes a first switching-off circuit and a second switching-off circuit each for turning off the power semiconductor element. The second switching-off circuit is lower in impedance than the first switching-off circuit. In a case where the power semiconductor element is turned off, only the first switching-off circuit operates when the power semiconductor element is in an unusual state, and the first switching-off circuit and the second switching-off circuit complementarily operate when the power semiconductor element is in a normal state.

Abstract: There are provided a small-sized power semiconductor module and a small-sized power conversion device capable of reducing ringing voltage. A power semiconductor module includes: a positive electrode-side switching element and a positive electrode-side freewheeling diode corresponding to a positive electrode-side power semiconductor element; a negative electrode-side switching element and a negative electrode-side freewheeling diode corresponding to a negative electrode-side power semiconductor element; a positive electrode conductor pattern; a negative electrode conductor pattern; an AC electrode pattern; and a snubber substrate including an insulating substrate having a snubber circuit formed thereon. The snubber substrate includes the insulating substrate and the at least one snubber circuit arranged on the insulating substrate. The snubber substrate is arranged on at least one of the positive electrode conductor pattern, the negative electrode conductor pattern and the AC electrode pattern.

Abstract: An increased accuracy in detecting deterioration of a semiconductor device can be achieved. A first metal pattern and a second metal pattern are connected to a controller. A bonding wire connects the first metal pattern and an emitter electrode. A linear conductor is connected between a first electrode pad and a second electrode pad. First bonding wires connect the first electrode pad and the second metal pattern. Second bonding wires connect the second electrode pad and the second metal pattern. The controller detects the deterioration of the semiconductor device when a potential difference between the first metal pattern and the second metal pattern is above a threshold.

Abstract: A power converter is provided that includes a reactor that is improved in effect of cooling a core and a winding. The power converter includes: a cooling member having a first cooling surface; and a reactor including a core portion and a winding portion. The core portion is a rectangular parallelepiped and disposed on the first cooling surface that is larger in area than the core portion in a plan view. The winding is wound around the core portion and the cooling member. The power converter further includes a power conversion module connected to one end of the winding portion.

Abstract: A drive circuit drives a power semiconductor element including a control terminal, a first main electrode, and a second main electrode. The drive circuit includes a first switching-off circuit and a second switching-off circuit each for turning off the power semiconductor element. The second switching-off circuit is lower in impedance than the first switching-off circuit. In a case where the power semiconductor element is turned off, only the first switching-off circuit operates when the power semiconductor element is in an unusual state, and the first switching-off circuit and the second switching-off circuit complementarily operate when the power semiconductor element is in a normal state.

Abstract: A conductive sheet capable of improving conductivity by suppressing reaggregation of carbon nanotubes, and a manufacturing method thereof are provided. Also, carbon composite paste and carbon composite filler are provided. The conductive sheet is characterized in that carbon nanotubes and carbon black as conductive materials are dispersed in a resin material. Carbon composite filler, which is composed of the carbon nanotubes in an amount of 10-30 wt. % and the carbon black in an amount of 90-70 wt. %, is dispersed uniformly in the resin material. The conductive sheet is composed of the carbon composite filler in an amount of 10-50 wt. % and the resin material in an amount of 90-50 wt. %, whose surface resistance value is 1-10 ?/sq.

Abstract: A plurality of drive circuits each drive a corresponding one of a plurality of power semiconductor elements connected in parallel. Each of the drive circuits includes a control command unit, a current detector, a differentiator, and an integrator. The current detector detects a gate current that flows into a gate terminal of a corresponding one of the power semiconductor elements after the control command unit outputs a turn-on command. The differentiator performs time differentiation of the gate current detected by the current detector. The integrator performs time integration of the gate current detected by the current detector. Based on a differential value and an integral value in each of the drive circuits, the determination unit determines whether an overcurrent state occurs or not in any of the plurality of power semiconductor elements.

Abstract: A drive circuit includes: a signal generation circuit; a comparator; a comparator; and a short circuit determination unit. The signal generation circuit is configured to generate, as an output signal, a differential amplification signal of a voltage detection signal indicating a gate voltage of a semiconductor element and a delay signal of the voltage detection signal. The comparator is configured to compare a value of the differential amplification signal with a first reference voltage value. The comparator is configured to compare a voltage value indicating a gate current with a second reference voltage value. The short circuit determination unit is configured to determine whether or not the semiconductor element is in a short-circuited state, based on a result of comparison by each of the comparators, and generate a determination signal indicating a determination result.

Abstract: A display device includes a resin layer, a film substrate bonded to one surface of the resin layer by using an adhesive layer, a display region provided on another surface of the resin layer opposite to the one surface of the resin layer, and a frame region provided around the display region. In the film substrate, a first slit formed by removing thickness of a film substrate is formed. In the film substrate, the first slit is formed in at least a part of a region overlapping a region between a plurality of input terminals of a driving chip and a plurality of output terminals of the driving chip.

Abstract: A plurality of drive circuits each drive a corresponding one of a plurality of power semiconductor elements connected in parallel. Each of the drive circuits includes a control command unit, a current detector, a differentiator, and an integrator. The current detector detects a gate current that flows into a gate terminal of a corresponding one of the power semiconductor elements after the control command unit outputs a turn-on command. The differentiator performs time differentiation of the gate current detected by the current detector. The integrator performs time integration of the gate current detected by the current detector. Based on a differential value and an integral value in each of the drive circuits, the determination unit determines whether an overcurrent state occurs or not in any of the plurality of power semiconductor elements.

Abstract: A power semiconductor module includes at least one upper arm provided between a positive electrode line and a node and including a power semiconductor device and a freewheeling diode connected in parallel, at least one lower arm provided between a negative electrode line and the node and including a power semiconductor device and a freewheeling diode connected in parallel, and a snubber circuit provided between the positive electrode line and the negative electrode line. The snubber circuit includes a snubber capacitor and a snubber resistor connected in series. At least one control terminal outputs a voltage representing the temperature of the snubber resistor or a voltage related to the temperature of the snubber resistor to a driver that drives the power semiconductor device.

Abstract: An array substrate includes at least: a glass substrate on which a driver is mounted; a panel side output terminal disposed in a mounting area of the glass substrate and connected to the driver; a first terminal portion; a gate insulation film including a first contact hole at a position overlapping a first terminal portion; a second terminal portion disposed to overlap at least a first contact hole and an opening edge of the first contact hole; a first interlayer insulation film including a second contact hole at a position overlapping a second terminal portion not to overlap the first contact hole; and a third terminal portion disposed to overlap at least the second contact hole and an opening edge of the second contact hole.

Abstract: A drive circuit for a power semiconductor element according to the present disclosure includes: a control command unit that outputs a turn-on command for a power semiconductor element; a gate voltage detection unit that detects a gate voltage applied to a gate terminal after the control command unit outputs the turn-on command; a differentiator that subjects the gate voltage detected by the gate voltage detection unit to time differentiation; and a determination unit that determines, based on the gate voltage detected by the gate voltage detection unit and a differential value by the differentiator, whether the power semiconductor element is in a short-circuit state or not.