Abstract: An information storage device includes a storage unit, a control unit, an allocation information storage unit, a QoS parameter storage unit, and a monitoring result storage unit. The control unit creates and manages a logical storage area using the storage area of the storage unit when a storage area allocation request is received. The allocation information storage unit stores allocation information related to logical storage areas. The QoS parameter storage unit stores quality requests expected to be satisfied for a communication for using the logical storage area. The control unit monitors the operating state and characteristics of the storage unit and the communication status, and stores the results in the monitoring result storage unit. The control unit derives internal QoS parameters to be set in the information storage device from the information stored in the allocation information storage unit, the QoS parameter storage unit, and the monitoring result storage unit.

Abstract: A polyether ether ketone composite material of the present invention includes PEEK and polyolefin, in which the composite material has a single endothermic peak in a DSC. The PEEK and the polyolefin are preferably to have compatibility with each other, and the composite material may have a matrix part formed from the PEEK and a first dispersed part formed from the polyolefin having a particle size of 1 ?m or smaller. The composite material may have a matrix part formed from the PEEK and a second dispersed part dispersed in the matrix part, and the second dispersed part may be formed from the PEEK and the polyolefin, a dispersion PEEK is dispersed in the polyolefin, and the second dispersed part has a particle size of 10 ?m or smaller.

Abstract: A composite material includes nitrile group-containing copolymer rubber; polyester-based thermoplastic polyurethane; and polyalkylene oxide containing metal salt, in which the metal salt is alkali metal salt or alkaline earth metal salt, and an amount of the metal salt in the polyalkylene oxide containing metal salt is 0.5 parts by mass to 3.0 parts by mass with respect to 100 parts by mass of the total amount of the nitrile group-containing copolymer rubber and the polyester-based thermoplastic polyurethane.

Abstract: The thermoplastic resin composition includes 30 to 80 parts by mass of a polyamide, 20 to 70 parts by mass of a thermoplastic fluorine resin, and a carbon fiber. Also, a total sum of the polyamide and the thermoplastic fluorine resin is 100 parts by mass, an amount of the carbon fiber is 5 to 50 parts by mass based on 100 parts by mass of the total sum of the polyamide and the thermoplastic fluorine resin. The thermoplastic fluorine resin has a tensile elongation of equal to or greater than 450%, and a tensile stress of equal to or greater than 5 MPa.

Abstract: The present application relates to a rubber composition containing a fluororubber, a radical initiator having a 1-minute half-life temperature of 280° C. or higher, and a crosslinking assistant having a melting point of 200° C. or higher and having two or more double bonds between carbon atoms; and a thermoplastic resin composition containing a fluororesin and the rubber composition.

Abstract: The present application relates to a rubber composition containing a fluororubber, a radical initiator having a 1-minute half-life temperature of 280° C. or higher, and a crosslinking assistant having a melting point of 200° C. or higher and having two or more double bonds between carbon atoms; and a thermoplastic resin composition containing a fluororesin and the rubber composition.

Abstract: There is provided a tube for an endoscope, including a tubular member forming a conduit line, a net layer which covers an outside of the tubular member and is formed of a hard linear member, and a covering layer which covers an outside of the net layer, wherein the covering layer is formed of a material includes thermoplastic resin, and has a thickness ranging from 0.02 to 0.5 mm.

Abstract: An insertion section of an endoscope has a flexible tube portion and a bending portion whose proximal end portion is coupled with a distal end of the flexible tube portion, a plurality of node rings are aligned in a bending tube serving as a base body portion of the bending portion, opening portions as through openings are provided in a node ring, protruding portions each having substantially the same shape as the opening portion are provided on an outer peripheral surface of a joint portion of the flexible tube portion that is inserted into the node ring, and a coupling structure according to the present invention couples the bending portion with the flexible tube portion by inserting the joint portion into the node ring and fitting the protruding portions into the opening portions.

Abstract: A turbocharger includes a turbine wheel having a center hole and a turbine shaft having one end secured on a small-diameter inner circumferential surface of the center hole. A large-diameter inner circumferential surface and a large diameter outer circumferential surface are formed to provide a cylindrical clearance opening toward a bearing housing between the center hole and the outer circumferential surface of the turbine shaft.

Abstract: On the p.sup.- substrate, the n.sup.- epitaxial layer is surrounded and isolated by the p well. In the surface of the n.sup.- epitaxial layer, there is provided the p floating region in the vicinity of the p well, on which the sense electrode is provided. The insulation film and the conductive film are formed on the n.sup.- epitaxial layer between the p well and the p floating region to overlap them. The conductive film and the p floating region serve as a composite field plate, which makes it hard that the surface electric field distribution is influenced by the state of electric charge in the surface and relieves the surface electric field by expanding the depletion layer, which extends from the pn junction between the n.sup.- epitaxial layer and the p well into the n.sup.- epitaxial layer in current blocking state, toward the center of the n.sup.- epitaxial layer.

Abstract: On the p.sup.- substrate, the n.sup.- epitaxial layer is surrounded and isolated by the p well. In the surface of the n.sup.- epitaxial layer, there is provided the p floating region in the vicinity of the p well, on which the sense electrode is provided. The insulation film and the conductive film are formed on the n.sup.- epitaxial layer between the p well and the p floating region to overlap them. The conductive film and the p floating region serve as a composite field plate, which makes it hard that the surface electric field distribution is influenced by the state of electric charge in the surface and relieves the surface electric field by expanding the depletion layer, which extends from the pn junction between the n.sup.- epitaxial layer and the p well into the n.sup.- epitaxial layer in current blocking state, toward the center of the n.sup.- epitaxial layer.

Abstract: On the p.sup.- substrate, the n.sup.- epitaxial layer is surrounded and isolated by the p well. In the surface of the n.sup.- epitaxial layer, there is provided the p floating region in the vicinity of the p well, on which the sense electrode is provided. The insulation film and the conductive film are formed on the n.sup.- epitaxial layer between the p well and the p floating region to overlap them. The conductive film and the p floating region serve as a composite field plate, which makes it hard that the surface electric field distribution is influenced by the state of electric charge in the surface and relieves the surface electric field by expanding the depletion layer, which extends from the pn junction between the n.sup.31 epitaxial layer and the p well into the n.sup.- epitaxial layer in current blocking state, toward the center of the n.sup.- epitaxial layer.

Abstract: A semiconductor integrated circuit device according to the present invention has a field plate disposed between the element isolation region which surrounds a semiconductor active element and an electrode wiring which is disposed to traverse the element isolation region while being electrically connected with the semiconductor active element, and a predetermined voltage is applied to the field plate. Accordingly, a concentration of the electric field is relieved not only at the boundary region between the element isolating region and the surface of the semiconductor active element which the electrode wiring traverses, but also at the surface of the semiconductor active element under the edge of the field plate, which eventually makes it possible to raise the breakdown-voltage of the semiconductor integrated circuit device.

Abstract: First and second semiconductor elements are formed in first and second semiconductor element forming regions which have the same thickness, include first and second semiconductor layers and are separated with dielectric isolation from each other. The thickness of the first semiconductor layer is made different between the first and second semiconductor element forming regions, so that the thickness of the second semiconductor layer becomes different between the first and second semiconductor element forming regions. Thus, the semiconductor device may have the semiconductor elements which have second semiconductor layers with different thicknesses in accordance with desired electrical characteristics for each of the semiconductor elements formed in the first and second semiconductor element forming regions, to complement a semiconductor device having the semiconductor elements each of which has independent optimum electrical characteristics.