Abstract: The semiconductor storage device includes a lower electrode that are vertically extended from a semiconductor substrate, a beam including a first portion extending in a horizontal direction to support the lower electrode and a second portion that is vertically extended along the exterior wall of the electrode from the first portion.

Abstract: The semiconductor storage device includes a lower electrode that are vertically extended from a semiconductor substrate, a beam including a first portion extending in a horizontal direction to support the lower electrode and a second portion that is vertically extended along the exterior wall of the electrode from the first portion.

Abstract: In a semiconductor device including active regions which are adjacent to each other with an element isolation region interposed therebetween and which are different in height from the element isolation region, when a contact is formed in a gate wiring on the element isolation region, a contact failure is caused. Provided is a semiconductor device including an element isolation region, two active regions adjacent to each other with the element isolation region interposed therebetween and having surfaces which are higher than that of the element isolation region, a gate wiring commonly led from the respective active regions and extending through the element isolation region, and a contact for connecting the gate wiring to a conductor layer above the gate wiring. The contact is provided in a region other than the element isolation region, or is provided in an expanded element isolation region.

Abstract: A semiconductor device may include, but is not limited to, a semiconductor substrate having a device isolation groove defining first to fourth device formation portions. The second device formation portion is separated from the first device formation portion. The third device formation portion extends from the first device formation portion. The third device formation portion is separated from the second device formation portion. The fourth device formation portion extends from the second device formation portion. The fourth device formation portion is separated from the first and third device formation portions. The third and fourth device formation portions are positioned between the first and second device formation portions.

Abstract: A semiconductor device according to the invention includes: a first region on a semiconductor substrate, in which a first transistor is formed, the first transistor including first gate insulating film 4 containing a high dielectric constant material and first metal gate electrode 5 formed on first gate insulating film 4; a second region adjacent to the first region on the semiconductor substrate, in which a second transistor is formed, the second transistor including second gate insulating film 4 and second metal gate electrode 12 formed on the second gate insulating film, a layered structure of electrode materials of the second transistor being different from a layered structure of electrode materials of the first transistor; and a first and a second line, the lines being of different potentials, wherein a border between the first and the second region overlaps with at most only the first or the second line.

Abstract: A data processor includes a first register file including registers, a second register file including registers, a number of which is larger than that of the registers of the first register file, an instruction decoder and an operation unit. The instruction decoder decodes an instruction described in first and second instruction formats. The first instruction format includes a first register-addressing field for designating the first register file. The second instruction format includes a second register-addressing field for designating the second register file, a size of which is larger than that of the first register-addressing field. The operation unit executes an instruction described in the first and second instruction formats using operand data stored in the first and second register files, respectively, based on the instruction decoder, and executes operations in parallel, a number of which is determined by a certain field included in the second instruction format.

Abstract: A semiconductor device may include, but is not limited to, a semiconductor substrate having a device isolation groove defining first to fourth device formation portions. The second device formation portion is separated from the first device formation portion. The third device formation portion extends from the first device formation portion. The third device formation portion is separated from the second device formation portion. The fourth device formation portion extends from the second device formation portion. The fourth device formation portion is separated from the first and third device formation portions. The third and fourth device formation portions are positioned between the first and second device formation portions.

Abstract: A semiconductor device may include, but is not limited to, a semiconductor substrate having a device isolation groove defining first to fourth device formation portions. The second device formation portion is separated from the first device formation portion. The third device formation portion extends from the first device formation portion. The third device formation portion is separated from the second device formation portion. The fourth device formation portion extends from the second device formation portion. The fourth device formation portion is separated from the first and third device formation portions. The third and fourth device formation portions are positioned between the first and second device formation portions.

Abstract: In a semiconductor device including active regions which are adjacent to each other with an element isolation region interposed therebetween and which are different in height from the element isolation region, when a contact is formed in a gate wiring on the element isolation region, a contact failure is caused. Provided is a semiconductor device including an element isolation region, two active regions adjacent to each other with the element isolation region interposed therebetween and having surfaces which are higher than that of the element isolation region, a gate wiring commonly led from the respective active regions and extending through the element isolation region, and a contact for connecting the gate wiring to a conductor layer above the gate wiring. The contact is provided in a region other than the element isolation region, or is provided in an expanded element isolation region.

Abstract: A data processor includes a first register file including registers, a second register file including resisters, a number of which is larger than that of the registers of the first register file, an instruction decoder and an operation unit. The instruction decoder decodes an instruction described in first and second instruction formats. The first instruction format includes a first register-addressing field for designating the first register file. The second instruction format includes a second register-addressing field for designating the second register file, a size of which is larger than that of the first register-addressing field. The operation unit executes an instruction described in the first and second instruction formats using operand data stored in the first and second register files, respectively, based on the instruction decoder, and executes operations in parallel, a number of which is determined by a certain field included in the second instruction format.

Abstract: A data processor which executes instructions described in first and second instruction formats. The first instruction format defines a register-addressing field of a predetermined size, while the second instruction format defines a register-addressing field of a size larger than that of the register-addressing field defined by the first instruction format. The data processor includes: instruction-type identifier, responsive to an instruction, for identifying the received instruction as being described in the first or second instruction format by the instruction itself; a first register file including a plurality of registers; and a second register file also including a plurality of registers, the number of the registers included in the second register file being larger than that of the registers included in the first register file.

Abstract: A semiconductor device according to the invention includes: a first region on a semiconductor substrate, in which a first transistor is formed, the first transistor including first gate insulating film 4 containing a high dielectric constant material and first metal gate electrode 5 formed on first gate insulating film 4; a second region adjacent to the first region on the semiconductor substrate, in which a second transistor is formed, the second transistor including second gate insulating film 4 and second metal gate electrode 12 formed on the second gate insulating film, a layered structure of electrode materials of the second transistor being different from a layered structure of electrode materials of the first transistor; and a first and a second line, the lines being of different potentials, wherein a border between the first and the second region overlaps with at most only the first or the second line.

Abstract: A data processor which executes instructions described in first and second instruction formats. The first instruction format defines a register-addressing field of a predetermined size, while the second instruction format defines a register-addressing field of a size larger than that of the register-addressing field defined by the first instruction format. The data processor includes: instruction-type identifier, responsive to an instruction, for identifying the received instruction as being described in the first or second instruction format by the instruction itself; a first register file including a plurality of registers; and a second register file also including a plurality of registers, the number of the registers included in the second register file being larger than that of the registers included in the first register file.

Abstract: A semiconductor device may include, but is not limited to, a semiconductor substrate having a device isolation groove defining first to fourth device formation portions. The second device formation portion is separated from the first device formation portion. The third device formation portion extends from the first device formation portion. The third device formation portion is separated from the second device formation portion. The fourth device formation portion extends from the second device formation portion. The fourth device formation portion is separated from the first and third device formation portions. The third and fourth device formation portions are positioned between the first and second device formation portions.

Abstract: A data processor which executes instructions described in first and second instruction formats. The first instruction format defines a register-addressing field of a predetermined size, while the second instruction format defines a register-addressing field of a size larger than that of the register-addressing field defined by the first instruction format. The data processor includes: instruction-type identifier, responsive to an instruction, for identifying the received instruction as being described in the first or second instruction format by the instruction itself; a first register file including a plurality of registers; and a second register file also including a plurality of registers, the number of the registers included in the second register file being larger than that of the registers included in the first register file.

Abstract: A moving object detection device accurately detects moving objects. The device includes a motion vector calculation section calculating motion vectors from an input image; a motion vector removal section removing a motion vector having high randomness from the calculated motion vectors; a motion vector accumulation section temporally accumulating each motion vector not removed by the motion vector removal section, and calculating an accumulated number of occurrences and an accumulated value of each motion vector; and a moving object detection section determining, based on the calculated accumulated value and calculated accumulated number of occurrences of each motion vector, whether each motion vector corresponds to a moving object.

Abstract: There is provided a semiconductor device adopting, as a layout of pads connected to an external package on an LSI, a zigzag pad layout in which the pads are arranged shifted alternately, which can avoid occurrences of short-circuiting of wires, an increase in chip size due to avoidance of short-circuiting, propagation of power supply or GND noise due to reduction in IO cell interval, and signal transmission delay difference due to displacement of pad positions. In a semiconductor device wherein plural pads on a semiconductor element which are connected to function terminals on an external package are arranged in two lines along the periphery of the semiconductor element, an arrangement order of the plural pads on the semiconductor element is different from an arrangement order of the function terminals on the external package.

Abstract: There is provided a semiconductor device adopting, as a layout of pads connected to an external package on an LSI, a zigzag pad layout in which the pads are arranged shifted alternately, which can avoid occurrences of short-circuiting of wires, an increase in chip size due to avoidance of short-circuiting, propagation of power supply or GND noise due to reduction in IO cell interval, and signal transmission delay difference due to displacement of pad positions. In a semiconductor device wherein plural pads on a semiconductor element which are connected to function terminals on an external package are arranged in two lines along the periphery of the semiconductor element, an arrangement order of the plural pads on the semiconductor element is different from an arrangement order of the function terminals on the external package.

Abstract: A data processor which executes instructions described in first and second instruction formats. The first instruction format defines a register-addressing field of a predetermined size, while the second instruction format defines a register-addressing field of a size larger than that of the register-addressing field defined by the first instruction format. The data processor includes: instruction-type identifier, responsive to an instruction, for identifying the received instruction as being described in the first or second instruction format by the instruction itself; a first register file including a plurality of registers; and a second register file also including a plurality of registers, the number of the registers included in the second register file being larger than that of the registers included in the first register file.

Abstract: A data processor according to the present invention executes instructions described in first and second instruction formats. The first instruction format defines a register-addressing field of a predetermined size, while the second instruction format defines a register-addressing field of a size larger than that of the register-addressing field defined by the first instruction format. The data processor includes: instruction-type identifier, responsive to an instruction, for identifying the received instruction as being described in the first or second instruction format by the instruction itself; a first register file including a plurality of registers; and a second register file also including a plurality of registers, the number of the registers included in the second register file being larger than that of the registers included in the first register file.