Patents by Inventor Takeshi Kurose
Takeshi Kurose has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 9646837Abstract: An ion implantation method includes transporting ions to a wafer as an ion beam, causing the wafer to undergo wafer mechanical slow scanning and also causing the ion beam to undergo beam fast scanning or causing the wafer to undergo wafer mechanical fast scanning in a direction perpendicular to a wafer slow scanning direction, irradiating the wafer with the ion beam by using the wafer slow scanning in the wafer slow scanning direction and the beam fast scanning of the ion beam or the wafer fast scanning of the wafer in the direction perpendicular to the wafer slow scanning direction, measuring a two-dimensional beam shape of the ion beam before ion implantation into the wafer, and defining an implantation and irradiation region of the ion beam by using the measured two-dimensional beam shape to thereby regulate the implantation and irradiation region.Type: GrantFiled: December 10, 2012Date of Patent: May 9, 2017Assignee: SEN CORPORATIONInventors: Shiro Ninomiya, Yasuharu Okamoto, Masaki Ishikawa, Takeshi Kurose, Akihiro Ochi
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Patent number: 9564289Abstract: An ion implanter includes a high-voltage power supply, a control unit that generates a command signal controlling an output voltage of the high-voltage power supply, an electrode unit to which the output voltage is applied, and a measurement unit that measures an actual voltage applied to the electrode unit. The control unit includes a first generation section that generates a first command signal for allowing the high-voltage power supply to output a target voltage, a second generation section that generates a second command signal for complementing the first command signal so that the actual voltage measured by the measurement unit becomes or close to the target voltage, and a command section that brings to the high-voltage power supply a synthetics command signal which is produced by synthesizing the first command signal and the second command signal.Type: GrantFiled: July 7, 2015Date of Patent: February 7, 2017Assignee: Sumitomo Heavy Industries Ion Technology Co., Ltd.Inventors: Tadanobu Kagawa, Toshio Yumiyama, Takeshi Kurose
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Patent number: 9412561Abstract: An ion implantation apparatus includes a beam scanner, a beam measurement unit that is able to measure an ion irradiation amount distribution in a beam scanning direction at a wafer position, and a control unit that outputs a control waveform to the beam scanner for scanning an ion beam. The control unit includes an output unit that outputs a reference control waveform to the beam scanner, an acquisition unit that acquires the ion irradiation amount distribution measured for the ion beam scanned based on the reference control waveform from a beam measurement unit, and a generation unit that generates a correction control waveform by using the acquired ion irradiation amount distribution. The control unit outputs the correction control waveform so that the ion irradiation amount distribution becomes a target distribution and the ion irradiation amount distribution per unit time becomes a target value.Type: GrantFiled: April 24, 2015Date of Patent: August 9, 2016Assignee: Sumitomo Heavy Industries Ion Technology Co., Ltd.Inventors: Takeshi Kurose, Noriyasu Ido, Hiroyuki Kariya
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Publication number: 20160013014Abstract: An ion implanter includes a high-voltage power supply, a control unit that generates a command signal controlling an output voltage of the high-voltage power supply, an electrode unit to which the output voltage is applied, and a measurement unit that measures an actual voltage applied to the electrode unit. The control unit includes a first generation section that generates a first command signal for allowing the high-voltage power supply to output a target voltage, a second generation section that generates a second command signal for complementing the first command signal so that the actual voltage measured by the measurement unit becomes or close to the target voltage, and a command section that brings to the high-voltage power supply a synthetics command signal which is produced by synthesizing the first command signal and the second command signal.Type: ApplicationFiled: July 7, 2015Publication date: January 14, 2016Inventors: Tadanobu Kagawa, Toshio Yumiyama, Takeshi Kurose
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Publication number: 20150311077Abstract: An ion implantation apparatus includes a beam scanner, a beam measurement unit that is able to measure an ion irradiation amount distribution in a beam scanning direction at a wafer position, and a control unit that outputs a control waveform to the beam scanner for scanning an ion beam. The control unit includes an output unit that outputs a reference control waveform to the beam scanner, an acquisition unit that acquires the ion irradiation amount distribution measured for the ion beam scanned based on the reference control waveform from a beam measurement unit, and a generation unit that generates a correction control waveform by using the acquired ion irradiation amount distribution. The control unit outputs the correction control waveform so that the ion irradiation amount distribution becomes a target distribution and the ion irradiation amount distribution per unit time becomes a target value.Type: ApplicationFiled: April 24, 2015Publication date: October 29, 2015Inventors: Takeshi Kurose, Noriyasu Ido, Hiroyuki Kariya
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Patent number: 8692216Abstract: A vertical profile, a horizontal profile, and an integrated current value of an ion beam are measured by a plurality of stationary beam measuring instruments and a movable or stationary beam measuring device. At a beam current adjustment stage before ion implantation, a control device simultaneously performs at least one of adjustment of a beam current to a preset value of the beam current, adjustment of a horizontal beam size that is necessary to secure uniformity of the horizontal ion beam density, and adjustment of a vertical beam size that is necessary to secure the uniformity of the vertical ion implantation distribution on the basis of a measurement value of the stationary beam measuring instruments and the movable or stationary beam measuring device.Type: GrantFiled: March 15, 2013Date of Patent: April 8, 2014Assignee: Sen CorporationInventors: Hiroyuki Kariya, Masaki Ishikawa, Yoshiaki Inda, Takeshi Kurose, Takanori Yagita, Toshio Yumiyama
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Publication number: 20130256566Abstract: A vertical profile, a horizontal profile, and an integrated current value of an ion beam are measured by a plurality of stationary beam measuring instruments and a movable or stationary beam measuring device. At a beam current adjustment stage before ion implantation, a control device simultaneously performs at least one of adjustment of a beam current to a preset value of the beam current, adjustment of a horizontal beam size that is necessary to secure uniformity of the horizontal ion beam density, and adjustment of a vertical beam size that is necessary to secure the uniformity of the vertical ion implantation distribution on the basis of a measurement value of the stationary beam measuring instruments and the movable or stationary beam measuring device.Type: ApplicationFiled: March 15, 2013Publication date: October 3, 2013Applicant: SEN CORPORATIONInventors: Hiroyuki KARIYA, Masaki Ishikawa, Yoshiaki Inda, Takeshi Kurose, Takanori Yagita, Toshio Yumiyama
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Patent number: 7719938Abstract: An optical disk recording/reproducing apparatus for accurately determining optimum recording power of a laser beam even if medium deviations occurs, stabilizing recording quality, and realizing recording which hardly causes read inability error. In test recording, a laser drive (5) irradiates a laser beam to an optical disk (1) to record information while varying the recording power stepwise and reproduce the information stepwise recorded on the optical disk. A recorded state index value calculating unit (9) determines the value representing the index of the recorded state from the signal level of the reproduced information at each step. A smoothing calculating unit (11) performs smoothing calculation of the recorded state index value at each step.Type: GrantFiled: May 19, 2005Date of Patent: May 18, 2010Assignee: Panasonic CorporationInventor: Takeshi Kurose
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Publication number: 20070253298Abstract: An optical disk recording/reproducing apparatus for accurately determining optimum recording power of a laser beam even if medium deviations occurs, stabilizing recording quality, and realizing recording which hardly causes read inability error. In test recording, a laser drive (5) irradiates a laser beam to an optical disk (1) to record information while varying the recording power stepwise and reproduce the information stepwise recorded on the optical disk. A recorded state index value calculating unit (9) determines the value representing the index of the recorded state from the signal level of the reproduced information at each step. A smoothing calculating unit (11) performs smoothing calculation of the recorded state index value at each step.Type: ApplicationFiled: May 19, 2005Publication date: November 1, 2007Inventor: Takeshi Kurose