Patents by Inventor Takeshi Omaru
Takeshi Omaru has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 11854950Abstract: The present invention is intended to provide a semiconductor module and a semiconductor device that are compatible with various rated currents. A semiconductor module includes a lead frame, and a semiconductor element joined with the lead frame. The lead frame includes a first joining structure and a second joining structure. The first joining structure includes a void part as a part at which the lead frame does not exist, and the second joining structure includes a void part as a part at which the lead frame does not exist. Each of the first joining structure and the second joining structure has a shape such that one of the first joining structure and the second joining structure complements at least part of the void part of the other assuming that the first joining structure and the second joining structure are overlapped.Type: GrantFiled: September 3, 2021Date of Patent: December 26, 2023Assignee: Mitsubishi Electric CorporationInventors: Hideo Komo, Arata Iizuka, Takeshi Omaru
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Patent number: 11764126Abstract: An object of the present invention is to provide a semiconductor device whose surfaces on both sides can be cooled and which has a function of insulating, on both the surfaces, the internal structure of a semiconductor package from the outside. The semiconductor device includes a first semiconductor package and a second semiconductor package. The second semiconductor package is joined on the first semiconductor package in such a manner that a first exposed surface of the first semiconductor package and a fourth exposed surface of the second semiconductor package are connected so as to face each other, and a second exposed surface of the first semiconductor package and a third exposed surface of the second semiconductor package are connected so as to face each other.Type: GrantFiled: November 12, 2018Date of Patent: September 19, 2023Assignee: Mitsubishi Electric CorporationInventors: Hideo Komo, Takeshi Omaru, Takuya Tsuru
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Patent number: 11621213Abstract: An object of the present invention is to provide a semiconductor device in which the effect of dimensional tolerance can be reduced, and a method for manufacturing the same. The semiconductor device according to the present invention includes: a plurality of cooling plates each having a coolant passage inside; spacers disposed to stack the cooling plates with spaces; at least one semiconductor package disposed on at least one principal surface of at least one of the cooling plates; and a spring plate disposed between adjacent ones of the cooling plates, the spring plate biasing the at least one semiconductor package toward the cooling plates.Type: GrantFiled: December 1, 2017Date of Patent: April 4, 2023Assignee: Mitsubishi Electric CorporationInventors: Hideo Komo, Takaaki Shirasawa, Shintaro Araki, Nobuyoshi Kimoto, Takeshi Omaru
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Publication number: 20210398885Abstract: The present invention is intended to provide a semiconductor module and a semiconductor device that are compatible with various rated currents. A semiconductor module includes a lead frame, and a semiconductor element joined with the lead frame. The lead frame includes a first joining structure and a second joining structure. The first joining structure includes a void part as a part at which the lead frame does not exist, and the second joining structure includes a void part as a part at which the lead frame does not exist. Each of the first joining structure and the second joining structure has a shape such that one of the first joining structure and the second joining structure complements at least part of the void part of the other assuming that the first joining structure and the second joining structure are overlapped.Type: ApplicationFiled: September 3, 2021Publication date: December 23, 2021Applicant: Mitsubishi Electric CorporationInventors: Hideo KOMO, Arata IIZUKA, Takeshi OMARU
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Publication number: 20210343623Abstract: An object of the present invention is to provide a semiconductor device whose surfaces on both sides can be cooled and which has a function of insulating, on both the surfaces, the internal structure of a semiconductor package from the outside. The semiconductor device includes a first semiconductor package and a second semiconductor package. The second semiconductor package is joined on the first semiconductor package in such a manner that a first exposed surface of the first semiconductor package and a fourth exposed surface of the second semiconductor package are connected so as to face each other, and a second exposed surface of the first semiconductor package and a third exposed surface of the second semiconductor package are connected so as to face each other.Type: ApplicationFiled: November 12, 2018Publication date: November 4, 2021Applicant: Mitsubishi Electric CorporationInventors: Hideo KOMO, Takeshi OMARU, Takuya TSURU
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Patent number: 11152287Abstract: The present invention is intended to provide a semiconductor module and a semiconductor device that are compatible with various rated currents. A semiconductor module includes a lead frame, and a semiconductor element joined with the lead frame. The lead frame includes a first joining structure and a second joining structure. The first joining structure includes a void part as a part at which the lead frame does not exist, and the second joining structure includes a void part as a part at which the lead frame does not exist. Each of the first joining structure and the second joining structure has a shape such that one of the first joining structure and the second joining structure complements at least part of the void part of the other assuming that the first joining structure and the second joining structure are overlapped.Type: GrantFiled: November 8, 2016Date of Patent: October 19, 2021Assignee: Mitsubishi Electric CorporationInventors: Hideo Komo, Arata Iizuka, Takeshi Omaru
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Publication number: 20200286811Abstract: An object of the present invention is to provide a semiconductor device in which the effect of dimensional tolerance can be reduced, and a method for manufacturing the same. The semiconductor device according to the present invention includes: a plurality of cooling plates each having a coolant passage inside; spacers disposed to stack the cooling plates with spaces; at least one semiconductor package disposed on at least one principal surface of at least one of the cooling plates; and a spring plate disposed between adjacent ones of the cooling plates, the spring plate biasing the at least one semiconductor package toward the cooling plates.Type: ApplicationFiled: December 1, 2017Publication date: September 10, 2020Applicant: Mitsubishi Electric CorporationInventors: Hideo KOMO, Takaaki SHIRASAWA, Shintaro ARAKI, Nobuyoshi KIMOTO, Takeshi OMARU
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Patent number: 10734990Abstract: A current detection circuit (4) detects a device current flowing in the semiconductor device (1). A voltage detection circuit (5) detects a device voltage applied to the semiconductor device (1). A temperature calculation device (6) has a table collecting device temperatures of the semiconductor device (1) respectively corresponding to plural collector currents and plural collector voltages, and reads out a device temperature corresponding to the device current detected by the current detection circuit (4) and the device voltage detected by the voltage detection circuit (5) from the table.Type: GrantFiled: January 8, 2016Date of Patent: August 4, 2020Assignee: Mitsubishi Electric CorporationInventors: Hideo Komo, Shoji Saito, Takeshi Omaru
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Patent number: 10505518Abstract: First and second circuits, a photocoupler and a substrate temperature monitor circuit are formed on a substrate. A photocoupler includes a primary-side light emitting diode that converts an electric signal received from the first circuit into an optical signal, and a light receiving device that converts the optical signal into an electric signal and outputs the electric signal to the second circuit. The substrate temperature monitor circuit reads a Vf voltage value of the primary-side light emitting diode of the photocoupler to monitor temperature of the substrate.Type: GrantFiled: January 20, 2015Date of Patent: December 10, 2019Assignee: Mitsubishi Electric CorporationInventors: Hideo Komo, Koichi Taguchi, Takeshi Omaru
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Publication number: 20190252300Abstract: The present invention is intended to provide a semiconductor module and a semiconductor device that are compatible with various rated currents. A semiconductor module includes a lead frame, and a semiconductor element joined with the lead frame. The lead frame includes a first joining structure and a second joining structure. The first joining structure includes a void part as a part at which the lead frame does not exist, and the second joining structure includes a void part as a part at which the lead frame does not exist. Each of the first joining structure and the second joining structure has a shape such that one of the first joining structure and the second joining structure complements at least part of the void part of the other assuming that the first joining structure and the second joining structure are overlapped.Type: ApplicationFiled: November 8, 2016Publication date: August 15, 2019Applicant: Mitsubishi Electric CorporationInventors: Hideo KOMO, Arata IIZUKA, Takeshi OMARU
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Publication number: 20180219543Abstract: A current detection circuit (4) detects a device current flowing in the semiconductor device (1). A voltage detection circuit (5) detects a device voltage applied to the semiconductor device (1). A temperature calculation device (6) has a table collecting device temperatures of the semiconductor device (1) respectively corresponding to plural collector currents and plural collector voltages, and reads out a device temperature corresponding to the device current detected by the current detection circuit (4) and the device voltage detected by the voltage detection circuit (5) from the table.Type: ApplicationFiled: January 8, 2016Publication date: August 2, 2018Applicant: Mitsubishi Electric CorporationInventors: Hideo KOMO, Shoji SAITO, Takeshi OMARU
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Publication number: 20170317664Abstract: First and second circuits, a photocoupler and a substrate temperature monitor circuit are formed on a substrate. A photocoupler includes a primary-side light emitting diode that converts an electric signal received from the first circuit into an optical signal, and a light receiving device that converts the optical signal into an electric signal and outputs the electric signal to the second circuit. The substrate temperature monitor circuit reads a Vf voltage value of the primary-side light emitting diode of the photocoupler to monitor temperature of the substrate.Type: ApplicationFiled: January 20, 2015Publication date: November 2, 2017Applicant: Mitsubishi Electric CorporationInventors: Hideo KOMO, Koichi TAGUCHI, Takeshi OMARU
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Patent number: 9508700Abstract: The present invention relates to a semiconductor device used in power equipment. The semiconductor device includes: a base plate; an insulating substrate mounted on the base plate; a power switching element bonded to the insulating substrate with a solder layer; and the base plate, the insulating substrate, and the power switching element forming a module, a control substrate located above the module. The control substrate includes a variable gate voltage circuit measuring a collector-emitter voltage of the power switching element and changing a gate voltage such that the power switching element is supplied with given target power determined by a product of the collector-emitter voltage and a collector current.Type: GrantFiled: December 4, 2013Date of Patent: November 29, 2016Assignee: Mitsubishi Electric CorporationInventors: Hideo Komo, Takeshi Omaru, Shoji Saito
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Publication number: 20160233202Abstract: The present invention relates to a semiconductor device used in power equipment. The semiconductor device includes: a base plate; an insulating substrate mounted on the base plate; a power switching element bonded to the insulating substrate with a solder layer; and the base plate, the insulating substrate, and the power switching element forming a module, a control substrate located above the module. The control substrate includes a variable gate voltage circuit measuring a collector-emitter voltage of the power switching element and changing a gate voltage such that the power switching element is supplied with given target power determined by a product of the collector-emitter voltage and a collector current.Type: ApplicationFiled: December 4, 2013Publication date: August 11, 2016Applicant: Mitsubishi Electric CorporationInventors: Hideo KOMO, Takeshi OMARU, Shoji SAITO
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Patent number: 8027132Abstract: A failure detection device detects the voltage across the main electrodes of an IGBT via a diode. The failure detection device determines occurrence of short-circuit failure in the IGBT when the anode voltage of the diode is lower than a first predetermined reference voltage. Determination can be made, excluding the case of a proper operation corresponding to a flywheel diode in an ON state, preferably together with the condition that the anode voltage of the diode is higher than a second predetermined reference voltage.Type: GrantFiled: May 27, 2008Date of Patent: September 27, 2011Assignee: Mitsubishi Electric CorporationInventor: Takeshi Omaru
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Patent number: 7830196Abstract: When an insulated gate bipolar transistor turned on starts to transition to turn off, the insulated gate bipolar transistor has between the emitter and the collector a surge voltage caused in proportion to the magnitude of a current gradient provided when a current flowing through a coil in switching is interrupted and an electrode interconnect inductance internal to an inverter circuit. A MOS transistor is temporarily turned on within a period of time for which the insulated gate bipolar transistor turned on transitions to turn off. This can bypass a portion of the current to the MOS transistor. This can provide an alleviated apparent current gradient of the current and thus alleviate or prevent a surge voltage caused at the insulated gate bipolar transistor.Type: GrantFiled: January 24, 2007Date of Patent: November 9, 2010Assignee: Mitsubishi Electric CorporationInventor: Takeshi Omaru
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Publication number: 20090160476Abstract: A failure detection device detects the voltage across the main electrodes of an IGBT via a diode. The failure detection device determines occurrence of short-circuit failure in the IGBT when the anode voltage of the diode is lower than a first predetermined reference voltage. Determination can be made, excluding the case of a proper operation corresponding to a flywheel diode in an ON state, preferably together with the condition that the anode voltage of the diode is higher than a second predetermined reference voltage.Type: ApplicationFiled: May 27, 2008Publication date: June 25, 2009Applicant: MITSUBISHI ELECTRIC CORPORATIONInventor: Takeshi Omaru
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Publication number: 20080074816Abstract: When an insulated gate bipolar transistor turned on starts to transition to turn off, the insulated gate bipolar transistor has between the emitter and the collector a surge voltage caused in proportion to the magnitude of a current gradient provided when a current flowing through a coil in switching is interrupted and an electrode interconnect inductance internal to an inverter circuit. A MOS transistor is temporarily turned on within a period of time for which the insulated gate bipolar transistor turned on transitions to turn off. This can bypass a portion of the current to the MOS transistor. This can provide an alleviated apparent current gradient of the current and thus alleviate or prevent a surge voltage caused at the insulated gate bipolar transistor.Type: ApplicationFiled: January 24, 2007Publication date: March 27, 2008Applicant: MITSUBISHI ELECTRIC CORPORATIONInventor: Takeshi Omaru