Abstract: An optical modulator includes a substrate on which an optical waveguide and a modulation electrode that modulates a light wave propagating through the optical waveguide are formed, and a case housing the substrate, the optical waveguide includes at least an optical branching part that branches one light wave into two light waves or an optical combining part that combines two light waves into one light wave, the modulation electrode has a signal electrode and a ground electrode, and a part of the signal electrode is disposed so as to cross the optical branching part or the optical combining part, and the optical modulator is provided with a suppressing unit that suppresses changes in an intensity ratio of the light waves branched at the optical branching part or an intensity ratio of the light waves combined at the optical combining part, by the signal electrode.

Abstract: A display device including a plurality of thin film transistors. One of the plurality of thin film transistors includes a gate electrode, a semiconductor layer having a region overlapping the gate electrode, a gate insulating layer between the gate electrode and the semiconductor layer, a source electrode and a drain electrode in contact with a surface of the semiconductor layer opposite to the side of the gate insulating layer, and a first shield electrode arranged in a region where the source electrode and the gate electrode overlap, and a second shield electrode arranged in a region where the drain electrode and the gate electrode overlap. The first shield electrode and the second shield electrode are arranged between the gate electrode and the semiconductor layer, and are insulated from the gate electrode, the semiconductor layer, the source electrode, and the drain electrode.

Abstract: According to one embodiment, a method of manufacturing a semiconductor device comprises forming an oxide semiconductor layer, forming a gate insulating layer in contact with the oxide semiconductor layer and covering the oxide semiconductor layer, and forming a gate electrode on the gate insulating layer so as to overlap the oxide semiconductor layer, and injecting boron through the gate electrode and the gate insulating layer after forming the gate electrode, wherein a boron concentration included in a region of the gate insulating layer overlapping the gate electrode is in a range of 1E+16 [atoms/cm3] or more.

Abstract: According to one embodiment, a semiconductor device includes a first insulating layer, an oxide semiconductor disposed on the first insulating layer, a second insulating layer which covers the oxide semiconductor and a gate electrode disposed on the second insulating layer and overlapping the oxide semiconductor. The oxide semiconductor includes a first region overlapping the gate electrode and a second region not overlapping the gate electrode. The first insulating layer, the second region and the second insulating layer contain impurities of a same type. The impurities contained in a region directly below the second region in the first insulating layer are more than the impurities contained in the second region.

Abstract: According to one embodiment, a semiconductor device includes an oxide semiconductor. The oxide semiconductor includes a first edge portion and a second edge portion intersecting a gate electrode, a first area overlapping the gate electrode, a second area along the first edge portion, a third area along the second edge portion, a fourth area the first edge portion, a fifth area along the second edge portion, a sixth area surrounded by the first area, the second area and the third area, and a seventh area surrounded by the first area, the fourth area and the fifth area. The first area, the second area and the third area, the fourth area and the fifth area have a higher resistivity than those of the sixth area and the seventh area.

Abstract: An optical functional device includes a package case accommodating an optical functional element, an input optical fiber, and an output optical fiber. The optical functional device includes a first reflecting surface that reflects input light output from the input optical fiber to an optical path of output light, a second reflecting surface that reflects the input light to the optical functional element, and a third reflecting surface that reflects the output light in a direction in which the output light becomes further away from an optical axis of the input optical fiber. An optical axis of a leaked light beam transmitted through the second reflecting surface after being reflected by the first reflecting surface or an extension line of the optical axis in an optical propagation medium does not include a portion that is aligned with an optical axis of the output light reflected by the third reflecting surface.

Abstract: Conventional ozone water is still insufficient in the removal rate and cleaning ability of resist required in today's semiconductor manufacturing field, and it does not fully meet the expectation of further improvement in the effects of sterilization, deodorization, and cleaning in the fields such as cleaning of foodstuffs, cleaning of process equipment and tools, and cleaning of fingers, as well as in the fields such as deodorization, sterilization, and preservation of freshness of foodstuffs. The above problem can be solved by defining the values of a plurality of specific production parameters in the production of ozone water into specific ranges.

Abstract: A display device comprising a transistor and a display element over the transistor, wherein the transistor includes a gate electrode on an insulating surface, a gate insulating layer on the gate electrode, and source/drain electrodes on the oxide semiconductor layer and the gate insulating layer, each including a first conductive layer containing nitrogen and a second conductive layer on the first conductive layer, and an insulating layer contains oxygen on the oxide semiconductor layer and the source/drain electrodes.

Abstract: A semiconductor device includes a first circuit element, the first circuit element including: a first semiconductor layer having a concave part; a first insulating layer arranged above the first semiconductor layer, the first insulating layer having a first through hole in a region overlapping with the concave part. A method of manufacturing a semiconductor device, the method including: forming a first semiconductor layer having a concave part on a substrate; forming a first insulating layer on the first semiconductor layer; forming a first through hole in a region of the first insulating layer overlapping with the concave part; and forming a first conductive layer arranged in the concave part and the first through hole.

Abstract: The purpose of the invention is to form the TFT of the oxide semiconductor, in which influence of variation in mask alignment is suppressed, thus, manufacturing a display device having a TFT of stable characteristics. The concrete measure is as follows. A display device including plural pixels, each of the plural pixels having a thin film transistor (TFT) of an oxide semiconductor comprising: a width of the oxide semiconductor in the channel width direction is wider than a width of the gate electrode in the channel width direction.

Abstract: An optical modulator includes a substrate on which an optical waveguide and a modulation electrode that modulates a light wave propagating through the optical waveguide are formed, and a case housing the substrate, the optical waveguide includes at least an optical branching part that branches one light wave into two light waves or an optical combining part that combines two light waves into one light wave, the modulation electrode has a signal electrode and a ground electrode, and a part of the signal electrode is disposed so as to cross the optical branching part or the optical combining part, and the optical modulator is provided with a suppressing unit that suppresses changes in an intensity ratio of the light waves branched at the optical branching part or an intensity ratio of the light waves combined at the optical combining part, by the signal electrode.

Abstract: An optical functional device includes a package case accommodating an optical functional element, an input optical fiber, and an output optical fiber. The optical functional device includes a first reflecting surface that reflects input light output from the input optical fiber to an optical path of output light, a second reflecting surface that reflects the input light to the optical functional element, and a third reflecting surface that reflects the output light in a direction in which the output light becomes further away from an optical axis of the input optical fiber. An optical axis of a leaked light beam transmitted through the second reflecting surface after being reflected by the first reflecting surface or an extension line of the optical axis in an optical propagation medium does not include a portion that is aligned with an optical axis of the output light reflected by the third reflecting surface.

Abstract: The semiconductor device comprises a gate electrode, a first gate insulating film overlapping a part of the side surface and the upper surface of the gate electrode, a second gate insulating film overlapping the upper surface of the gate electrode, a semiconductor film provided on the upper surface of the second gate insulating film and overlapping the gate electrode and a first terminal and a second terminal overlapping the upper surface of the semiconductor film. In a plan view, a first region is a region where the semiconductor film overlaps the upper surface of the first gate insulating film and the second gate insulating film between the first terminal and the second terminal, and a third region is a region that overlaps both a part of the upper surface of the gate electrode and the second gate insulating film and does not overlap the first gate insulating film.

Abstract: The semiconductor device includes a first gate electrode, a first gate insulating film, a semiconductor film, a first electrode, a second electrode, a second gate insulating film, and a second gate electrode. The first gate insulating film is located over the first gate electrode. The semiconductor film is located over the first gate insulating film and overlaps with the first gate electrode. The first electrode and the second electrode are each located over and in contact with the semiconductor film. The second gate insulating film is located over the first electrode and the second electrode. The second gate electrode is located over the second gate insulating film and overlaps with the second electrode and the first gate electrode. The first electrode is completely exposed from the second gate electrode.

Abstract: The purpose of the invention is to form the TFT of the oxide semiconductor, in which influence of variation in mask alignment is suppressed, thus, manufacturing a display device having a TFT of stable characteristics. The concrete measure is as follows. A display device including plural pixels, each of the plural pixels having a thin film transistor (TFT) of an oxide semiconductor comprising: a width of the oxide semiconductor in the channel width direction is wider than a width of the gate electrode in the channel width direction.

Abstract: A thin film transistor comprising an active layer made of an oxide semiconductor containing indium and gallium, an electrode layer including a titanium layer formed on the active layer, wherein an indium concentration is equal to or less than 1.3 times an oxygen concentration in a range of 15 nm from an interface between the active layer and the electrode layer toward the active layer.

Abstract: Provided are: a method of producing heated ozone water, the method capable of producing heated ozone water having an extremely high ozone concentration by suppressing a reduction in the ozone concentration in high-concentration heated ozone water; heated ozone water; and a semiconductor wafer-cleaning liquid using the heated ozone water. A method of producing heated ozone water obtained by dissolving ozone in pure water, the method being characterized by including: adjusting a pH of the pure water to 3 or less by adding acid to the pure water; to obtain an acid water, dissolving an ozone gas in the acid water; and heating the pure water, the acid water or the ozone water, to 60° C. or more.

Abstract: The purpose of the invention is to form the TFT of the oxide semiconductor, in which influence of variation in mask alignment is suppressed, thus, manufacturing a display device having a TFT of stable characteristics. The concrete measure is as follows. A display device including plural pixels, each of the plural pixels having a thin film transistor (TFT) of an oxide semiconductor comprising: a width of the oxide semiconductor in the channel width direction is wider than a width of the gate electrode in the channel width direction.

Abstract: A position control apparatus includes an inversion detector which detects an inversion of a position command and generates an inversion detection signal, a deflection characteristic storage unit which stores a deflection characteristic representing an amount of deflection with respect to a torque command, and an inversion correction calculator which calculates an inversion correction amount. The inversion correction calculator stores a torque command immediately before the inversion, and calculates the inversion correction amount from a difference between an amount of deflection immediately before inversion in which the stored torque command is checked with the deflection characteristic, and an amount of deflection after the inversion in which a value obtained by inverting a sign of the stored torque command is checked with the deflection characteristic. A value obtained by adding the inversion correction amount to the position command value is used for position error calculation.

Abstract: The purpose of the invention is to form the TFT of the oxide semiconductor, in which influence of variation in mask alignment is suppressed, thus, manufacturing a display device having a TFT of stable characteristics. The concrete measure is as follows. A display device including plural pixels, each of the plural pixels having a thin film transistor (TFT) of an oxide semiconductor comprising: a width of the oxide semiconductor in the channel width direction is wider than a width of the gate electrode in the channel width direction.