Abstract: A two-layer structured electric power application electrode including a non-split electrode consisting of a single planar plate and six split electrodes arranged on the non-split electrode so as to be electrically in contact with the non-split electrode is arranged on the upper side of a discharge chamber provided within a vacuum container such that the power application electrode faces a strip substrate in parallel. The split electrodes are arranged in such a manner as to form a planar plane, and the distance between the surfaces of the split electrodes facing the strip substrate and the strip substrate is uniform. The total area of the surfaces of the split electrodes facing the strip substrate is the same as the area of the non-split electrode on which the split electrodes are mounted.

Abstract: A tocotrienol-containing powder prepared by a process wherein an oil containing a tocotrienol is treated with a lecithin, a cellulose and an emulsifying agent in water to form an emulsion, a powder substance is mixed with the formed emulsion to form a suspension and then the formed suspension is spray-dried. The powder containing tocotrienol, which has excellent storage stability and free flowability, can be used in preparing a tablet which comprises the powder compressed into a tablet form.

Abstract: A film-forming apparatus by means of plasma CVD, comprising at least a vacuum chamber, a power application electrode for introducing a discharging power into said vacuum chamber, and a raw material gas supply means for supplying a film-forming raw material gas into said vacuum chamber, said power application electrode being arranged in said vacuum chamber so as to oppose to a substrate arranged in said vacuum chamber, characterized in that said power application electrode has a reinforcing member or said power application electrode comprises a power application electrode with no reinforcing member which has a thickness which is greater than a distance between said substrate and said power application electrode. A film-forming method using said film-forming apparatus.

Abstract: A film-forming apparatus comprising a vacuum chamber, a power application electrode, a raw material gas introduction portion through which a raw material gas is introduced into the vacuum chamber, and an exhaustion portion through which the vacuum chamber is exhausted, the power application electrode being arranged so as to oppose a substrate for film formation positioned in the vacuum chamber, characterized in that at least said raw material gas introduction portion or the exhaustion portion is provided with an opening adjusting member having a desired thickness for intercepting the plasma, and the power application electrode and the opening adjusting member are arranged to satisfy an equation a or c≧b, with a being a shortest distance between the power application electrode and the opening adjusting member provided at the raw material gas introduction portion, c being a shortest distance between the power application electrode and the opening adjusting member provided at the exhaustion portion, and b bei

Abstract: A film-forming apparatus by means of plasma CVD, comprising at least a vacuum chamber, a power application electrode for introducing a discharging power into said vacuum chamber, and a raw material gas supply means for supplying a film-forming raw material gas into said vacuum chamber, said power application electrode being arranged in said vacuum chamber so as to oppose to a substrate arranged in said vacuum chamber, characterized in that said power application electrode has a reinforcing member or said power application electrode comprises a power application electrode with no reinforcing member which has a thickness which is greater than a distance between said substrate and said power application electrode. A film-forming method using said film-forming apparatus.

Abstract: A chemical-reaction inducing means is provided in an exhaust line connecting a processing space for subjecting a substrate or a film to plasma processing to an exhaust means, and at least either an unreacted gas or byproduct exhausted from the processing space are caused to chemically react without allowing plasma in the processing space to reach the chemical-reaction inducing means, thereby improving the processing ability of the chemical-reaction inducing means to process the unreacted gas or byproduct.

Abstract: A deposited film forming apparatus is provided which has a power applying electrode disposed above a flat plate type base member grounded, in a vacuum chamber, and a power source for supplying a power to the power applying electrode, the deposited film forming apparatus being constructed to supply the power from the power source to the power applying electrode so as to generate a plasma in a discharge space between the power applying electrode and a substrate disposed in opposition to the power applying electrode in the vacuum chamber and serving as an electrode in a pair with the power applying electrode, thereby decomposing a source gas introduced into the vacuum chamber to form a deposited film on the substrate, wherein the power applying electrode is fixed to the base member with the power applying electrode being isolated from the base member. A deposited film forming method using the apparatus is also provided.

Abstract: A film-forming apparatus comprising a vacuum chamber, a power application electrode, a raw material gas introduction portion through which a raw material gas is introduced into said vacuum chamber, and an exhaustion portion through which said vacuum chamber is exhausted, said power application electrode being arranged so as to oppose a substrate for film formation positioned in said vacuum chamber, characterized in that at least said raw material gas introduction portion or said exhaustion portion is provided with an opening adjusting member having a desired thickness for intercepting said plasma, and said power application electrode and said opening adjusting member are arranged to satisfy an equation a or c≧b.

Abstract: The surface shape of a power-applying electrode is altered in agreement with the curving of a substrate so that the electrode-substrate distance can be kept at a constant value. This enables formation of thin films having uniform film thickness in the substrate width direction even when the electrode-substrate distance is shortened in order to make film formation rate higher in deposited-film formation apparatus of a roll-to-roll system.

Abstract: A two-layer structured electric power application electrode including a non-split electrode consisting of a single planar plate and six split electrodes arranged on the non-split electrode so as to be electrically in contact with the non-split electrode is arranged on the upper side of a discharge chamber provided within a vacuum container such that the power application electrode faces a strip substrate in parallel. The split electrodes are arranged in such a manner as to form a planar plane, and the distance between the surfaces of the split electrodes facing the strip substrate and the strip substrate is uniform. The total area of the surfaces of the split electrodes facing the strip substrate is the same as the area of the non-split electrode on which the split electrodes are mounted. This improves the uniformity in plasma generated in the apparatus for forming a deposited film and enables cutting-down of the costs required to form deposited films.