Abstract: A light-emitting element and an electronic apparatus capable of reducing the element area and realizing a stable electrical connection. A light-emitting element according to the present technology includes a first semiconductor layer, a light-emitting layer, and a second semiconductor layer laminated in this order, and a light-emitting surface, a non-light-emitting surface, and a side surface connecting the light-emitting surface and the non-light-emitting surface. The side surface is inclined. A first electrode is in a concave portion in the light-emitting surface at a periphery of the first semiconductor layer. A second electrode is on a non-light-emitting surface side of the laminate. A third electrode is on the non-light-emitting surface side of the laminate and is insulated from the second electrode. The side wiring electrically connects the first electrode and the third electrode via the side surface.

Abstract: A signal modulation unit modulates an actuator control signal for controlling an actuator by using a modulation signal. A correlation calculation unit calculates, when a measurement signal indicating a physical state measured by a passive sensor is received from the passive sensor after a modulated actuator control signal being the actuator control signal having been modulated by the signal modulation unit is transmitted to the actuator, a correlation between the measurement signal received and a modulation signal used for modulation of the actuator control signal by the signal modulation unit. The signal determination unit determines whether or not the measurement signal is a legitimate signal by using a correlation value obtained by the correlation calculation unit.

Abstract: The present invention relates to a security device which performs processes such as authentication or cryptography, for example a security device for securely holding a key used in a cryptographic process, and a security method therefore.

Abstract: A computer generates a local signal using a random number sequence, and outputs the local signal (SG1). A signal generator generates and transmits a transmit signal (SG2) by frequency modulating a carrier wave with the local signal (SG1). A mixer outputs a mixer output signal (SG4) by combining the transmit signal (SG2) with a receive signal (SG3). A control filter allows the mixer output signal (SG4) to pass therethrough according to a filter control signal (SG7). The computer generates the filter control signal (SG7) using the random number sequence indicating the random number sequence used for modulation of the local signal, and outputs the filter control signal to the control filter. The computer determines whether there is an attack, based on the random number sequence and a detection signal (SG8) outputted by the control filter according to the filter control signal (SG7).

Abstract: A signal modulation unit modulates an actuator control signal for controlling an actuator by using a modulation signal. A correlation calculation unit calculates, when a measurement signal indicating a physical state measured by a passive sensor is received from the passive sensor after a modulated actuator control signal being the actuator control signal having been modulated by the signal modulation unit is transmitted to the actuator, a correlation between the measurement signal received and a modulation signal used for modulation of the actuator control signal by the signal modulation unit. The signal determination unit determines whether or not the measurement signal is a legitimate signal by using a correlation value obtained by the correlation calculation unit.

Abstract: The present invention relates to a security device which performs processes such as authentication or cryptography, for example a security device for securely holding a key used in a cryptographic process, and a security method therefore.

Abstract: The present invention relates to an attack detection apparatus that detects an attack against a communication network between devices, and improves information security of the communication network. The attack detection apparatus has a CAN (Controller Area Network) that transfers a signal to a plurality of nodes by a differential voltage between two signal lines, and a short circuit detector that monitors the signal transferred by the two signal lines of the CAN, and detects a short circuit between the two signal lines on the basis of a change in the signal indicating a characteristic of a short circuit attack by an unauthorized node.

Abstract: A random number expanding device (100) includes an expanding unit (120) that expands a random number r(M) to an N bits random number s(N) using a logical operation that is obtained by multiplication of one matrix of a check matrix with a size of M×N and a generator matrix with a size of M×N which are determined from an (N, N?M, D) linear code for error correction by a vector in a case in which the random number r(M) is the vector with M components, the multiplication being performed through addition based on an exclusive OR. Since the random number expanding device (100) includes the expanding unit (120), it is possible to reduce the bit numbers of random numbers to be used, and counter an irradiation attack with multiple laser beams.

Abstract: An object of the present invention is to allow software to be securely updated when a volatile memory that will become a working area is not sufficiently large. An embedded apparatus sequentially performs a verification process on each of a plurality of sections obtained by division of update data for updating the software. The embedded apparatus stores an intermediate value obtained during the verification process. When the verification process is completed for each of the sections, the embedded apparatus compares a value obtained in the verification processes with verification data to check that there is no tampering. When it can be confirmed that there is no tampering, the embedded apparatus sequentially performs the verification process on each section again.

Abstract: Provided is a semiconductor device, including: an enable generating circuit (10) for generating an enable signal, being a pulse train in synchronization with a clock signal, and supplying the enable signal to a protection target circuit (30); and a first abnormality detecting circuit (20) for detecting an abnormality of clock timing due to introduction of a spike into the clock signal based on comparison between the clock signal and the enable signal generated by the enable generating circuit. Thus, a semiconductor device capable of detecting a local clock abnormality is obtained.

Abstract: The present invention relates to a method for manufacturing a thin film of a rare earth complex polymer with low solubility in an organic solvent and to an organic EL device including a thin film of a rare earth complex polymer obtained using this method, the thin film used as a light-emitting layer. A method for manufacturing a rare earth complex polymer thin film includes a step (1) in which a micelle-containing solvent (A) that includes a rare-earth complex and a ferrocenyl surfactant and a micelle-containing solvent (B) that includes a polydentate ligand and a ferrocenyl surfactant are mixed to form a mixed micelle-containing solvent, and a step (2) in which electrolysis is performed using the mixed micelle-containing solvent as an electrolyte, and formed on a positive electrode surface is a thin film of a rare earth complex polymer that includes the rare earth complex and polydentate ligand.

Abstract: An iron-based alloy comprises 1.5 to 2.5 wt % of C, 0.25 to 4.75 wt % of Ni, and W and V in quantities surrounded by the line L as shown in FIG. 1 of the attached drawings with a balance of Fe and inevitable impurities. The iron-based alloy is obtained by a first heat treatment for applying a solid solution treatment by rapidly cooling the iron-based alloy from a temperature of an austenite forming temperature or more to consequently obtain a mixed matrix comprising a base matrix of martensite and remaining austenite phases and a non-molten carbide, and a second heat treatment for cooling the iron-based alloy after precipitating an MC type carbide within an eutectoid transformation temperature range to consequently precipitate a low carbon content austenite phase.

Abstract: An iron-based alloy comprises 1.5 to 2.5 wt % of C, 0.25 to 4.75 wt % of Ni, and W and V in quantities surrounded by the line L as shown in FIG. 1 of the attached drawings with a balance of Fe and inevitable impurities. The iron-based alloy is obtained by a first heat treatment for applying a solid solution treatment by rapidly cooling the iron-based alloy from a temperature of an austenite forming temperature or more to consequently obtain a mixed matrix comprising a base matrix of martensite and remaining austenite phases and a non-molten carbide, and a second heat treatment for cooling the iron-based alloy after precipitating an MC type carbide within an eutectoid transformation temperature range to consequently precipitate a low carbon content austenite phase.

Abstract: In producing an Fe-based member, an Fe-based material comprising 0.6% by weight≦carbon (C)≦1.0% by weight silicon (Si)<2.2% by weight 0.9% by weight≦manganese (Mn)≦1.7% by weight 0.5% by weight≦nickel (Ni)≦1.5% by weight and the balance of iron (Fe) including inevitable impurities, is subjected, at a first step, to a thermal treatment at a heating temperature T1 set in a range of TS<T1<TL wherein TS represents a solidus temperature of the Fe-based material and TL represents a liquidus temperature, and under a cooling condition set at a quenching level. At a second step, the resulting Fe-based material is subjected to a thermal treatment at a heating temperature T2 set in a range of Te1<T2<Te2 wherein Te1 represents a eutectic transformation starting temperature and Te2 represents a eutectic transformation finishing temperature, and for a heating time t set in a range of 60 min≦t≦180 min.

Abstract: A thixocast casting material is formed of an Fe—C—Si based alloy in which an angle endothermic section due to the melting of a eutectic crystal exists in a latent heat distribution curve and has a eutectic crystal amount Ec in a range of 10% by weight<Ec<50% by weight. This composition comprises 1.8% by weight≦C≦2.5% by weight of carbon, 1.4% by weight≦Si≦3% by weight if silicon and a balance of Fe including inevitable impurities.

Abstract: The present invention produces an Fe-based member having a high Young's modulus and a high toughness. In producing an Fe-based member, a first step and a second step are sequentially carried out. At the first step, an Fe-based material comprising 1.5% by weight≦C≦2.5% by weight 1.4% by weight≦Si≦3.5% by weight 0.9% by weight≦Mn≦1.7% by weight 0.5% by weight≦Ni≦1.5% by weight, and the balance of Fe including inevitable impurities is subjected to a thermal treatment at a heating temperature set in a range of TS<T1<TL and under a quenching condition, wherein TS represents a solidus temperature of the Fe-based material, and TL represents a liquidus temperature.

Abstract: A bottom structure of a personal watercraft enhances the running performance of a personal watercraft. A concavo-convex face (21) having very small concave or convex portions for drawing air from an outside of a watercraft is formed on a water contact face (S) in a bottom surface (20) of the personal watercraft during planing. The air is drawn by the concavo-convex face (21), thereby separating a water flow from the bottom surface (20). Consequently, frictional resistance to the water in the bottom surface (20) can be reduced.

Abstract: A thixocast casting material is formed of an Fe--C--Si based alloy in which an angle endothermic section due to the melting of a eutectic crystal exists in a latent heat distribution curve and has a eutectic crystal amount Ec in a range of 10% by weight <Ec<50% by weight. This composition comprises 1.8% by weight .ltoreq.C.ltoreq.2.5% by weight of carbon, 1.4% by weight .ltoreq.Si.ltoreq.3% by weight of silicon and a balance of Fe including inevitable impurities.

Abstract: In carrying out of a thixocasting process, a material in a semi-molten state is produced by heating an aluminum alloy material which has a thermal characteristic that a first angled endothermic section generated by the melting of a eutectic crystal and a second angled endothermic section generated by the melting of a component having a melting point higher than an eutectic point exist in a differential calorimetric curve. A start point of a primary pressing stage is established at a point when the temperature T of the material is in a range of T.sub.1 <T.ltoreq.T.sub.4 in the relationship between the temperature T.sub.1 of a rise-start point in the first angled endothermic section and the temperature T.sub.4 of a peak of the second angled endothermic section. At the primary pressing stage, the charging of the material into the cavity in a casting mold is completed. A start point of a secondary pressing stage is established at a point when the temperature T of the material is in a range of T.sub.1 <T.

Abstract: In a thixocasting process, the following steps are used: a step of subjecting, to a heating treatment, an Al-Si based alloy material having a hypo eutectic crystal composition and a characteristic that a first angled endothermic section appearing due to the melting of a eutectic crystal and a second angled endothermic section appearing due to the melting of a component having a melting point higher than a eutectic point exist in a differential calorimetric curve, thereby preparing a semi-molten Al-Si based alloy material having solid and liquid phases coexisting therein; a step of pouring the semi-molten Al-Si based alloy material into a cavity in a casting mold under pressure; and a step of solidifying the semi-molten Al-Si based alloy material under pressure. When the temperature of a rise-start point in the first angled endothermic section is represented by T.sub.1, and the temperature of a drop-end point the first angled endothermic sections is represented by T.sub.