Abstract: A wastegate valve device according to at least one embodiment is a wastegate valve device disposed on a bypass passage bypassing a turbine of a turbocharger arranged on an exhaust gas passage of an engine, including: a valve seat surface formed at an outlet of the bypass passage; and a wastegate valve body which includes a support arm supported rotatably about an axis and a valve body supported by the support arm, the valve body being configured to come into and out of contact with the valve seat surface in accordance with rotation of the support arm. In the wastegate valve device according to at least one embodiment, the valve seat surface is inclined with respect to a direction orthogonal to an axial direction of the bypass passage, as viewed from a direction of the above-described axis.

Abstract: A wastegate valve device according to at least one embodiment is a wastegate valve device disposed on a bypass passage bypassing a turbine of a turbocharger arranged on an exhaust gas passage of an engine, including: a valve seat surface formed at an outlet of the bypass passage; and a wastegate valve body which includes a support arm supported rotatably about an axis and a valve body supported by the support arm, the valve body being configured to come into and out of contact with the valve seat surface in accordance with rotation of the support arm. In the wastegate valve device according to at least one embodiment, the valve seat surface is inclined with respect to a direction orthogonal to an axial direction of the bypass passage, as viewed from a direction of the above-described axis.

Abstract: Provided is a method of manufacturing a MEMS device including forming, in a metal layer, an opening that enables a first space and a second space to communicate with each other by exposing the metal layer to an etching solution in a state where the metal layer is left at a boundary between the first space and the second space, and covering an inner surface of an opening of each of an adhesive layer and the metal layer by forming a protective layer from an inner surface of the first space to an inner surface of the second space after the opening of the metal layer is formed.

Abstract: A liquid ejecting head includes a piezoelectric element which includes a piezoelectric layer, and a first electrode and a second electrode sandwiching the piezoelectric layer therebetween, a leading-out wiring provided on an upper portion of the piezoelectric element and including a wiring layer made of gold or platinum and an underlayer which are patterned, and an insulating protective film which covers at least an exposed portion on the underlayer of the leading-out wiring.

Abstract: A liquid ejecting head includes a piezoelectric element which includes a piezoelectric layer, and a first electrode and a second electrode sandwiching the piezoelectric layer therebetween, a leading-out wiring provided on an upper portion of the piezoelectric element and including a wiring layer made of gold or platinum and an underlayer which are patterned, and an insulating protective film which covers at least an exposed portion on the underlayer of the leading-out wiring.

Abstract: Provided is a method of manufacturing a MEMS device including forming, in a metal layer, an opening that enables a first space and a second space to communicate with each other by exposing the metal layer to an etching solution in a state where the metal layer is left at a boundary between the first space and the second space, and covering an inner surface of an opening of each of an adhesive layer and the metal layer by forming a protective layer from an inner surface of the first space to an inner surface of the second space after the opening of the metal layer is formed.

Abstract: To provide a waste-gate valve device with a good flow-rate controllability. A waste-gate valve device 1 includes: a turbine housing 3 provide with a waste-gate channel 2 through which exhaust gas bypasses a turbine; and a waste-gate valve 4 to open and close an outlet of the waste-gate channel 2. The waste-gate valve 4 includes a valve body 7 to open and close the outlet of the waste-gate channel 2, and a protrusion 8 to be housed in the waste-gate channel 2 when the valve body 7 closes the outlet of the waste-gate channel 2. The waste-gate channel 2 ensures a maximum flow rate of exhaust gas at a time when the waste-gate valve is fully open. An area ratio of a flow-path cross-sectional area A1 of the waste-gate channel 2 to a flow-path cross-sectional area A2 of a merging portion is not more than 0.2, the merging portion being a part at which exhaust gas having passed through the turbine merges.

Abstract: A MEMS device includes a protective substrate on which is mounted a driving circuit that drives a piezoelectric actuator and on which is formed an interconnect pattern electrically connected to the driving circuit, and a sealing substrate that includes a first opening and that is bonded to the protective substrate using an adhesive so that part of the interconnect pattern is located between the protective substrate and the sealing substrate. The interconnect pattern includes a connection portion that extends from a bonding region where the protective substrate and the sealing substrate are bonded by the adhesive to the first opening, and that has a connection region electrically connected to the driving circuit. A groove is formed in the connection portion between the connection region and a border between the bonding region and the connection portion.

Abstract: To provide a waste-gate valve device with a good flow-rate controllability. A waste-gate valve device 1 includes: a turbine housing 3 provide with a waste-gate channel 2 through which exhaust gas bypasses a turbine; and a waste-gate valve 4 to open and close an outlet of the waste-gate channel 2. The waste-gate valve 4 includes a valve body 7 to open and close the outlet of the waste-gate channel 2, and a protrusion 8 to be housed in the waste-gate channel 2 when the valve body 7 closes the outlet of the waste-gate channel 2. The waste-gate channel 2 ensures a maximum flow rate of exhaust gas at a time when the waste-gate valve is fully open. An area ratio of a flow-path cross-sectional area A1 of the waste-gate channel 2 to a flow-path cross-sectional area A2 of a merging portion is not more than 0.2, the merging portion being a part at which exhaust gas having passed through the turbine merges.

Abstract: A MEMS device includes a protective substrate on which is mounted a driving circuit that drives a piezoelectric actuator and on which is formed an interconnect pattern electrically connected to the driving circuit, and a sealing substrate that includes a first opening and that is bonded to the protective substrate using an adhesive so that part of the interconnect pattern is located between the protective substrate and the sealing substrate. The interconnect pattern includes a connection portion that extends from a bonding region where the protective substrate and the sealing substrate are bonded by the adhesive to the first opening, and that has a connection region electrically connected to the driving circuit. A groove is formed in the connection portion between the connection region and a border between the bonding region and the connection portion.

Abstract: A liquid ejecting head suppresses erosion of silicon substrates by liquid, and whereby suppresses leakage of liquid, discharging failure of liquid droplets, and peeling-off of laminated substrates. The liquid ejecting head includes at least a nozzle plate on which nozzle openings for discharging liquid are provided, and a flow path formation substrate on which a pressure generation chamber communicating with the nozzle openings is provided. The nozzle plate is formed with a silicon substrate. At least the flow path formation substrate and the nozzle plate are bonded to each other after providing a tantalum oxide film formed by atomic layer deposition on the entire surfaces including a bonded surface.

Abstract: A liquid ejecting head suppresses erosion of silicon substrates by liquid, and whereby suppresses leakage of liquid, discharging failure of liquid droplets, and peeling-off of laminated substrates. The liquid ejecting head includes at least a nozzle plate on which nozzle openings for discharging liquid are provided, and a flow path formation substrate on which a pressure generation chamber communicating with the nozzle openings is provided. The nozzle plate is formed with a silicon substrate. At least the flow path formation substrate and the nozzle plate are bonded to each other after providing a tantalum oxide film formed by atomic layer deposition on the entire surfaces including a bonded surface.

Abstract: A waste gate valve device in which a waste gate valve 100 is fully closed when a valve body of the waste gate valve 100 moves from an exhaust outlet passage 18s side toward an exhaust bypass passage 5 side and touches a seat face 12a of a valve seat part 12, wherein the valve body of the waste gate valve is provided with a protrusion 2 of a prescribed height on a touching side where the valve body of the waste gate valve touches the seat face 12a, the protrusion being configured so as to reduce an exhaust gas passage area of the exhaust gas.

Abstract: A liquid-ejecting head including a channel-forming substrate provided with pressure-generating chambers that are communicated with nozzle openings for ejecting a liquid, pressure-generating units for generating a change in the pressure in the pressure-generating chambers, and a fluid-resistant protection film is provided. The protection film is disposed at least on the inner walls of the pressure-generating chambers and includes an amorphous layer of an amorphous film disposed on the inner wall surfaces and a crystal layer of a crystallized film disposed on the surface of the amorphous layer.

Abstract: Provided is a liquid jet head, a method of manufacturing the same, and a liquid jet apparatus, in which liquid ejecting characteristics can be kept constant for a long period and in which nozzle blockage is prevented. In a liquid jet head including a passage-forming substrate (10) which is made of a single crystal silicon substrate and in which pressure generating chambers (12) communicating with nozzle orifices are formed, and pressure generating elements (300) for causing pressure changes in the pressure generating chambers (12), a protective film (100) which is made of tantalum oxide and has resistance to liquid, is provided at least on the inner wall surfaces of the pressure generating chambers (12).

Abstract: A liquid-ejecting head including a channel-forming substrate provided with pressure-generating chambers that are communicated with nozzle openings for ejecting a liquid, pressure-generating units for generating a change in the pressure in the pressure-generating chambers, and a fluid-resistant protection film is provided. The protection film is disposed at least on the inner walls of the pressure-generating chambers and includes an amorphous layer of an amorphous film disposed on the inner wall surfaces and a crystal layer of a crystallized film disposed on the surface of the amorphous layer.

Abstract: Disclosed are a head member having an ink-repellent film high in ink repellency, a method of ink-repellent treatment for the head member and an apparatus for the same. A head member (15) including a plurality of ejection ports (14) to eject ink which includes an ink-repellent film (25) on a surface having the ejection ports (14) open thereon, the ink-repellent film made of fluorocarbon resin subjected to plasma polymerization on the surface. An ink-repellent treatment method includes the steps of: disposing the head member (15) in a chamber (31) maintained in a vacuum state; introducing gaseous linear perfluorocarbon as a material of an ink-repellent film into the chamber (31); and depositing an ink-repellent film (14) made of fluorocarbon resin obtained by subjecting the perfluorocarbon to plasma polymerization on the surface of the head member (15) to perform the ink-repellent treatment.

Abstract: Disclosed are a head member having an ink-repellent film high in ink repellency, a method of ink-repellent treatment for the head member and an apparatus for the same. A head member (15) including a plurality of ejection ports (14) to eject ink comprises an ink-repellent film (25) on a surface having the ejection ports (14) open thereon, the ink-repellent film made of fluorocarbon resin subjected to plasma polymerization on the surface. An ink-repellent treatment method includes the steps of: disposing the head member (15) in a chamber (31) maintained in a vacuum state; introducing gaseous linear perfluorocarbon as a material of an ink-repellent film into the chamber (31); and depositing an ink-repellent film (14) made of fluorocarbon resin obtained by subjecting the perfluorocarbon to plasma polymerization on the surface of the head member (15) to perform the ink-repellent treatment.

Abstract: A liquid jet head includes a passage-forming substrate including pressure generating chambers communicating with nozzle orifices, and piezoelectric elements provided on one side of the passage-forming substrate, with a vibration plate between the elements and the plate. The piezoelectric elements include lower and upper electrodes, and a piezoelectric layer. In the liquid jet head, pressure generating chambers are arranged in a width direction. The lower electrode is continuously provided from a region facing the pressure generating chambers to a region facing compartment walls. The liquid jet head includes a lead electrode for lower electrode, which is drawn out from the lower electrode in the region facing the compartment walls, and which includes a first lead electrode, having a width equivalent to or narrower than that of the compartment wall, and a second lead electrode formed on the first lead electrode and wider than the first lead electrode.

Abstract: A lower electrode, which partially constitutes a piezoelectric element, is patterned such that at least one end face thereof is located in a region facing a corresponding pressure generating chamber. A piezoelectric layer includes a plurality of layers of ferroelectric films. A first ferroelectric film, which is a lowermost layer of the plurality of layers of ferroelectric films, is provided only on the lower electrode such that an end face thereof is aligned with the end face of the lower electrode. The end face of the first ferroelectric film and the end face of the lower electrode are sloped at an angle of 10° to 50° with respect to a vibration plate. Other ferroelectric films formed on the first ferroelectric film are provided in such a manner as to overlie the sloped end face of the lower electrode and the sloped end face of the first ferroelectric film.