Patents by Inventor Taketomi Kamikawa
Taketomi Kamikawa has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 8764287Abstract: A thermal detector includes a thermal detecting element and a support member supporting the thermal detecting element and a wiring layer. The support member has an arm member connected to a mounting member with the first arm member having an arm base end section extending outwardly from the mounting member toward a first direction, the arm base section having a first width measured along a direction perpendicular to the first direction, and an arm body section having a proximal end portion extending from the arm base end section generally along an outer contour of the mounting member with the proximal end portion being spaced apart from an edge of the mounting member in the first direction. The proximal end portion of the arm body section has a second width measured along a direction perpendicular to a lengthwise direction of the arm body section that is narrower than the first width.Type: GrantFiled: January 25, 2011Date of Patent: July 1, 2014Assignee: Seiko Epson CorporationInventor: Taketomi Kamikawa
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Patent number: 8569698Abstract: A thermal detector has a thermal detection element in which a physical characteristic changes based on temperature, a light-absorbing member configured and arranged to collect heat and transmit collected heat to the thermal detection element, a support member mounting the thermal detection element on a first side with a second surface facing a cavity, and a support part supporting a portion of the support member. The light-absorbing member is a plate shaped member at least partially contacting a top part of the thermal detection element and having a portion overhanging to an outside from the top part of the thermal detection element in plan view.Type: GrantFiled: July 20, 2011Date of Patent: October 29, 2013Assignee: Seiko Epson CorporationInventors: Jun Takizawa, Takafumi Noda, Taketomi Kamikawa, Mitsuhiro Yamamura
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Publication number: 20120018635Abstract: A thermal detector has a thermal detection element in which a physical characteristic changes based on temperature, a light-absorbing member configured and arranged to collect heat and transmit collected heat to the thermal detection element, a support member mounting the thermal detection element on a first side with a second surface facing a cavity, and a support part supporting a portion of the support member. The light-absorbing member is a plate shaped member at least partially contacting a top part of the thermal detection element and having a portion overhanging to an outside from the top part of the thermal detection element in plan view.Type: ApplicationFiled: July 20, 2011Publication date: January 26, 2012Applicant: SEIKO EPSON CORPORATIONInventors: Jun TAKIZAWA, Takafumi NODA, Taketomi KAMIKAWA, Mitsuhiro YAMAMURA
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Patent number: 8039835Abstract: A semiconductor device includes a substrate, a transparent oxide layer disposed on one surface side of the substrate, a gate disposed apart from the transparent oxide layer, and a gate insulating layer disposed between the transparent oxide layer and the gate. The transparent oxide layer includes a source, a drain, and a channel formed integrally between the source and the drain, and is made of a transparent oxide material as the main material. The gate provides an electric field to the channel. The gate insulating layer insulates the source and the drain from the gate. The average thickness of the channel is smaller than the average thickness of the source and the drain so that the source and the drain function as conductors and the channel functions as a semiconductor.Type: GrantFiled: December 14, 2007Date of Patent: October 18, 2011Assignees: Shinshu University, National University Corporation, Seiko Epson CorporationInventors: Musubu Ichikiwa, Kiyoshi Nakamura, Taketomi Kamikawa
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Publication number: 20110182322Abstract: A thermal detector includes a thermal detecting element and a support member supporting the thermal detecting element and a wiring layer. The support member has an arm member connected to a mounting member with the first arm member having an arm base end section extending outwardly from the mounting member toward a first direction, the arm base section having a first width measured along a direction perpendicular to the first direction, and an arm body section having a proximal end portion extending from the arm base end section generally along an outer contour of the mounting member with the proximal end portion being spaced apart from an edge of the mounting member in the first direction. The proximal end portion of the arm body section has a second width measured along a direction perpendicular to a lengthwise direction of the arm body section that is narrower than the first width.Type: ApplicationFiled: January 25, 2011Publication date: July 28, 2011Applicant: SEIKO EPSON CORPORATIONInventor: Taketomi KAMIKAWA
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Patent number: 7960720Abstract: A transistor including a first gate electrode, a second gate electrode, a first gate insulating layer disposed between the first gate electrode and the second gate electrode, a first interlayer disposed between the first gate insulating layer and the second gate electrode and containing a first organic material, an organic semiconductor layer disposed between the first interlayer and the second gate electrode, a second gate insulating layer disposed between the organic semiconductor layer and the second gate electrode, and a source electrode and a drain electrode disposed between the first interlayer and the second gate insulating layer and injecting carriers into the organic semiconductor layer, wherein an ambipolar property is imparted to a part of the organic semiconductor layer that contacts with the first interlayer under an action of the first interlayer.Type: GrantFiled: January 22, 2008Date of Patent: June 14, 2011Assignees: Seiko Epson Corporation, Shinshu University, National University CorporationInventors: Taketomi Kamikawa, Masamitsu Inoue
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Patent number: 7582233Abstract: A method of manufacturing directional coupler includes forming a first waveguide over a substrate, forming a separate section on respective ends of the first waveguide, and forming a second waveguide stacked over the first waveguide, wherein the first waveguide and the second waveguide are patterned by ink-jet process. The first waveguide and the second waveguide may be formed so as to overlap each other. The method may further include forming a projecting portion on the substrate, wherein the first waveguide being formed on the projection portion.Type: GrantFiled: April 10, 2006Date of Patent: September 1, 2009Assignee: Seiko Epson CorporationInventors: Tomoko Koyama, Takeo Kaneko, Taketomi Kamikawa, Norio Oguchi, Atsushi Harada
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Publication number: 20080173867Abstract: A semiconductor device includes a substrate, a transparent oxide layer disposed on one surface side of the substrate, a gate disposed apart from the transparent oxide layer, and a gate insulating layer disposed between the transparent oxide layer and the gate. The transparent oxide layer includes a source, a drain, and a channel formed integrally between the source and the drain, and is made of a transparent oxide material as the main material. The gate provides an electric field to the channel. The gate insulating layer insulates the source and the drain from the gate. The average thickness of the channel is smaller than the average thickness of the source and the drain so that the source and the drain function as conductors and the channel functions as a semiconductor.Type: ApplicationFiled: December 14, 2007Publication date: July 24, 2008Applicants: SHINSHU UNIVERSITY, SEIKO EPSON CORPORATIONInventors: Musubu ICHIKAWA, Kiyoshi NAKAMURA, Taketomi KAMIKAWA
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Publication number: 20080173866Abstract: A transistor including a first gate electrode, a second gate electrode, a first gate insulating layer disposed between the first gate electrode and the second gate electrode, a first interlayer disposed between the first gate insulating layer and the second gate electrode and containing a first organic material, an organic semiconductor layer disposed between the first interlayer and the second gate electrode, a second gate insulating layer disposed between the organic semiconductor layer and the second gate electrode, and a source electrode and a drain electrode disposed between the first interlayer and the second gate insulating layer and injecting carriers into the organic semiconductor layer, wherein an ambipolar property is imparted to a part of the organic semiconductor layer that contacts with the first interlayer under an action of the first interlayer.Type: ApplicationFiled: January 22, 2008Publication date: July 24, 2008Applicants: SEIKO EPSON CORPORATION, SHINSHU UNIVERSITY, NATIONAL UNIVERSITY CORPORATIONInventors: Taketomi KAMIKAWA, Masamitsu INOUE
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Patent number: 7138764Abstract: A light-emitting device includes a light-emitting layer capable of generating light by electroluminescence, a pair of electrodes applies an electric field to the light-emitting layer, and a substrate having a depression in a surface, and the light-emitting layer is disposed within the depression of the substrate.Type: GrantFiled: October 11, 2002Date of Patent: November 21, 2006Assignee: Seiko Epson CorporationInventors: Tomoko Koyama, Takeo Kaneko, Taketomi Kamikawa, Norio Oguchi, Atsushi Harada
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Publication number: 20060174657Abstract: A method of manufacturing directional coupler includes forming a first waveguide over a substrate, forming a separate section on respective ends of the first waveguide, and forming a second waveguide stacked over the first waveguide, wherein the first waveguide and the second waveguide are patterned by ink-jet process. The first waveguide and the second waveguide may be formed so as to overlap each other. The method may further include forming a projecting portion on the substrate, wherein the first waveguide being formed on the projection portion.Type: ApplicationFiled: April 10, 2006Publication date: August 10, 2006Applicant: SEIKO EPSON CORPORATIONInventors: Tomoko Koyama, Takeo Kaneko, Taketomi Kamikawa, Norio Oguchi, Atsushi Harada
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Patent number: 6870182Abstract: An organic semiconductor device of the present invention has an organic semiconductor layer disposed within a depression formed in a substrate; a drain electrode and a source electrode; and a gate electrode to face the organic semiconductor layer with a gate insulating layer interposed. Alternatively, an organic semiconductor device of the present invention has an insulating layer disposed on a substrate; an organic semiconductor layer disposed within a depression formed in the insulating layer; a drain electrode and a source electrode; and a gate electrode disposed to face the organic semiconductor layer with a gate insulating layer interposed.Type: GrantFiled: November 4, 2002Date of Patent: March 22, 2005Assignee: Seiko Epson CorporationInventors: Tomoko Koyama, Takeo Kaneko, Taketomi Kamikawa, Norio Oguchi, Atsushi Harada
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Publication number: 20030099438Abstract: A directional coupler of the present invention includes a substrate; a first waveguide layer; a second waveguide layer disposed over the first waveguide layer; a separation layer which separates the first waveguide layer and the second waveguide layer at least at one end; and an optical coupling section which is a predetermined region in which the first waveguide layer and the second waveguide layer approach or come in contact with each other. Each of the first waveguide layer and the second waveguide layer is integrally and continuously formed.Type: ApplicationFiled: November 4, 2002Publication date: May 29, 2003Applicant: SEIKO EPSON CORPORATIONInventors: Tomoko Koyama, Takeo Kaneko, Taketomi Kamikawa, Norio Oguchi, Atsushi Harada
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Publication number: 20030094897Abstract: A light-emitting device includes a light-emitting layer capable of generating light by electroluminescence, a pair of electrodes applies an electric field to the light-emitting layer, and a substrate having a depression in a surface, and the light-emitting layer is disposed within the depression of the substrate.Type: ApplicationFiled: October 11, 2002Publication date: May 22, 2003Applicant: Seiko Epson CorporationInventors: Tomoko Koyama, Takeo Kaneko, Taketomi Kamikawa, Norio Oguchi, Atsushi Harada
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Publication number: 20030085398Abstract: An organic semiconductor device of the present invention has an organic semiconductor layer disposed within a depression formed in a substrate; a drain electrode and a source electrode; and a gate electrode to face the organic semiconductor layer with a gate insulating layer interposed. Alternatively, an organic semiconductor device of the present invention has an insulating layer disposed on a substrate; an organic semiconductor layer disposed within a depression formed in the insulating layer; a drain electrode and a source electrode; and a gate electrode disposed to face the organic semiconductor layer with a gate insulating layer interposed.Type: ApplicationFiled: November 4, 2002Publication date: May 8, 2003Applicant: SEIKO EPSON CORPORATIONInventors: Tomoko Koyama, Takeo Kaneko, Taketomi Kamikawa, Norio Oguchi, Atsushi Harada
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Patent number: 5804835Abstract: This is an invention of a superconductive device that is equipped with a first superconductive electrode, a second superconductive electrode and a junction that is made of a superconductive material that connects these superconductive electrodes, wherein there are 2-terminal or 3-terminal superconductive devices that use a junction that is in a superconductive state that is weaker than the first and the second superconductive electrodes or in a normal conductive state that is near the superconductive state. The differences between the critical current, the critical temperature, the pair potential and the carrier densities of the first and the second superconductive electrodes and the junction are used as a means of putting the junction in the states mentioned above. Based on the methods mentioned above, a superconductive device which has few pattern rule restrictions and which is easy to fabricate can be offered.Type: GrantFiled: June 5, 1995Date of Patent: September 8, 1998Assignee: Seiko Epson CorporationInventors: Taketomi Kamikawa, Eiji Natori, Setsuya Iwashita, Tatsuya Shimoda