Abstract: A semiconductor device includes a semiconductor element having an Ni—V electrode and a conductor, the semiconductor element and the conductor being bonded via Sn-based lead-free solder. In the semiconductor device, an Sn—V compound layer and an (Ni, Cu)3Sn4 compound layer adjacent to the Sn—V compound are formed adjacent to an interface between the semiconductor element and the Sn-based lead-free solder. A manufacturing method for a semiconductor device according to the present invention includes: causing the Sn-based lead-free solder and the Ni—V electrode to react with each other to form an Sn—V layer and an (Ni, Cu)3Sn4 compound layer; and following formation of the Sn—V layer, leaving an unreacted layer of the Ni—V electrode, the unreacted layer having not reacted with the Sn-based lead-free solder, intact.

Abstract: An inductance reduction effect is improved by reducing the distortion of an inductance loop generated when a switching element is turned on and off. An upper arm circuit portion (201U) and a lower arm circuit portion (201L) are provided so as to be shifted in the second direction orthogonal to the first direction in which the upper arm circuit portion (201U) and the lower arm circuit portion (201L) are separated from each other, and at least a part of a snubber circuit connection portion region (202) constituted by a positive electrode terminal portion (181), a negative electrode terminal portion (155), and a snubber element (30) is provided in the first region generated by shifting the upper arm circuit portion (201U) from the lower arm circuit portion (201L) in the second direction.

Abstract: A power converter includes a power module allowing supply and cutoff of main current, a driver module controlling supply and cutoff of the main current, a high potential side semiconductor device, and a low potential side semiconductor device. Plural power module side wirings are connected with respective electrodes contained in the high and low potential side semiconductor devices. Plural driver module side wirings are provided on the driver module as wirings connected with the plural corresponding power module side wirings. Conductors are disposed in the vicinity of a plane on which the plural power module side wirings are provided and a plane on which the plural driver module side wirings are provided, and electrically connected to surround magnetic flux generated by current looping at least through a power source transformer, the driver module side wirings, and the power module side wirings.

Abstract: A power converter which has a power module allowing supply and cutoff of main current, and a driver module controlling supply and cutoff of the main current allowed by the power module includes: a high potential side semiconductor device which allows supply and cutoff of the main current on the high potential side of the power module; a low potential side semiconductor device which allows supply and cutoff of the main current on the low potential side of the power module, and is connected with the high potential side semiconductor device in series; plural power module side wirings connected with respective electrodes contained in the high potential side semiconductor device and the low potential side semiconductor device, and disposed adjacent to each other substantially on the same plane as the power module in the order of applied potentials with a connection end between the plural power module side wirings and the driver module located along the end of the power module; plural driver module side wirings pro