Abstract: Provided is a flight device that can surely perform transformation operations of legs supporting a fuselage base in landing. A flight device 10 includes: a fuselage base 14; a first leg 26 provided on the fuselage base 14 and transformable between a flight state and a landing state; a second leg 27 provided on the fuselage base 14 as a separate body from the first leg 26 and transformable between the flight state and the landing state; a first drive unit 281 and a second drive unit 282 configured to drive transformation operations of the first leg 26 and the second leg 27; and an operation interconnecting mechanism 16 configured to interconnect the first leg 26 and the second leg 27 in terms of operation.

Abstract: A manufacturing method of an electronic device includes forming a support layer that is provided to extend from a first surface of a functional layer formed on a first substrate via a first layer, as a surface on a side opposite to the first substrate, to the first substrate and supports the functional layer with respect to the first substrate, forming a thin film holding layer on at least one of the support layer and the first surface of the functional layer, removing the first layer, joining a transfer member to a surface of the thin film holding layer on a side opposite to the functional layer, separating the functional layer, the support layer and the thin film holding layer from the first substrate, transferring the functional layer, the support layer and the thin film holding layer to a different second substrate, and removing the thin film holding layer.

Abstract: A reflective mask blank includes a substrate; a multilayer reflective film that reflects EUV light; a protection film that protects the multilayer reflective film; and a phase shift film that shifts a phase of the EUV light, the substrate, the multilayer reflective film, the protection film, and the phase shift film being arranged in this order. The phase shift film contains at least one first element X1 selected from the first group consisting of ruthenium (Ru), iridium (Ir), platinum (Pt), palladium (Pd), and gold (Au), and at least one second element X2 selected from the second group consisting of oxygen (O), boron (B), carbon (C), and nitrogen (N). In the phase shift film, a chemical shift of a peak of 3d5/2 or a peak of 4f7/2 of the first element X1 observed by X-ray electron spectroscopy is less than 0.3 eV.

Abstract: A piezoelectric film integrated device include a substrate; a first electrode provided on the substrate; a second electrode provided on the substrate; a first monocrystalline piezoelectric film provided on the first electrode; a second monocrystalline piezoelectric film provided on the second electrode and having a crystal structure different from a crystal structure of the first monocrystalline piezoelectric film; a third electrode provided on the first monocrystalline piezoelectric film; and a fourth electrode provided on the second monocrystalline piezoelectric film.

Abstract: A piezoelectric film integrated device includes a substrate; an electrode provided on the substrate; a first piezoelectric element that is provided on the electrode and includes a first monocrystalline piezoelectric film and a first electrode film superimposed on the first monocrystalline piezoelectric film; and a second piezoelectric element that is provided on the first piezoelectric element and includes a second monocrystalline piezoelectric film and a second electrode film superimposed on the second monocrystalline piezoelectric film.

Abstract: A piezoelectric-body film joint substrate includes a substrate, a substrate electrode provided on the substrate, a first piezoelectric-body film stuck on the substrate electrode and including a first piezoelectric film and a first upper electrode film formed on the first piezoelectric film, and a second piezoelectric-body film stuck on the first upper electrode film and including a second piezoelectric film different from the first piezoelectric film and a second upper electrode film formed on the second piezoelectric film.

Abstract: A piezoelectric-body film joint substrate includes a substrate, a first electrode provided on the substrate, a first piezoelectric-body film stuck on the first electrode and including a first piezoelectric film and a first upper electrode film formed on the first piezoelectric film, a second electrode provided on the substrate, and a second piezoelectric-body film stuck on the second electrode and including a second piezoelectric film different from the first piezoelectric film and a second upper electrode film formed on the second piezoelectric film, wherein a height from an upper surface of the substrate, on which the first electrode and the second electrode are formed, to a top of the first upper electrode film and a height from the upper surface of the substrate to a top of the second upper electrode film differ from each other.

Abstract: A semiconductor device includes: a first layer including a first optical semiconductor element; a second layer including a second optical semiconductor element having a lower conversion efficiency than the first optical semiconductor element; and a lens member. The first optical semiconductor element and the second optical semiconductor element are disposed between the lens member and a focal point of the lens member in an optical axis direction of the lens member, at least partially overlap as viewed in the optical axis direction, and are disposed so that the second optical semiconductor element is closer to the focal point than the first optical semiconductor element.

Abstract: A light emitting device includes: a first layer in which a first light emitting element is disposed; a second layer stacked on the first layer and including a second light emitting element that at least partially overlaps the first light emitting element as viewed in a light emitting direction perpendicular to a light emitting surface of the first light emitting element; and a control substrate on which the first layer is stacked and that controls light emission of the first light emitting element and the second light emitting element. The first layer includes a first surface facing the second layer in the light emitting direction, a second surface facing the control substrate in the light emitting direction, and a first opening formed from the first surface to the second surface. The second light emitting element and the control substrate are electrically connected together through the first opening.

Abstract: A semiconductor element unit includes a semiconductor element; and a first electrode having a flat first electrode mounting surface whose surface roughness is less than or equal to 10 [nm] and forming eutectic bonding with the semiconductor element in a part different from the first electrode mounting surface. A semiconductor element unit supply substrate includes one or more semiconductor element units. A semiconductor packaging circuit includes the semiconductor element unit.

Abstract: A light-emitting thyristor includes a first semiconductor layer of a P type, a second semiconductor layer of an N type arranged adjacent to the first semiconductor layer; a third semiconductor layer of the P type arranged adjacent to the second semiconductor layer; and a fourth semiconductor layer of the N type arranged adjacent to the third semiconductor layer. A part of the first semiconductor layer is an active layer adjacent to the second semiconductor layer. A dopant concentration of the active layer is higher than or equal to a dopant concentration of the third semiconductor layer. A thickness of the third semiconductor layer is thinner than a thickness of the second semiconductor layer. A dopant concentration of the second semiconductor layer is lower than the dopant concentration of the third semiconductor layer.

Abstract: A composite integrated film includes a base member thin film having a base member first surface and a base member second surface facing each other, one or more penetration parts penetrating the base member first surface and the base member second surface of the base member thin film, one or more electrodes each including an electrical path part formed between the base member first surface and the base member second surface via the penetration part and an electrode surface in a planar shape formed on the base member second surface's side, and one or more elements provided on the base member first surface of the base member thin film and electrically connected to the electrodes, wherein the electrode surface and the base member second surface form a same flat surface.

Abstract: A light emitting device includes a pixel set unit that includes a plurality of pixels arranged in a grid; first common wiring that connects together first terminals of pixels aligned in a first direction among the plurality of pixels; and second common wiring that connects together second terminals of two pixels aligned in a second direction orthogonal to the first direction among the plurality of pixels.

Abstract: Provided is a light emitting device that includes a substrate including electrodes; a film member; light emitting elements arranged on the film member; and conductive members that electrically connect the light emitting elements and the electrodes to each other, wherein the film member has through holes formed at positions corresponding to the electrodes, and each of the conductive members includes a first conductive part extending from the light emitting element to the through hole and a second conductive part connecting the first conductive part and the electrode to each other via the through hole.

Abstract: A light-emitting thyristor includes a first semiconductor layer of a first conductivity type; a second semiconductor layer of a second conductivity type arranged adjacent to the first semiconductor layer; a third semiconductor layer of the first conductivity type arranged adjacent to the second semiconductor layer; and a fourth semiconductor layer of the second conductivity type arranged adjacent to the third semiconductor layer. The first semiconductor layer includes an active layer adjacent to the second semiconductor layer, the second semiconductor layer includes a first layer adjacent to the active layer and a second layer arranged between the first layer and the third semiconductor layer, and the first layer has a band gap wider than a band gap of the active layer and a band gap of the second layer.

Abstract: An imaging device, having a substrate for mounting an imaging portion; a lens barrel for holding a lens group; a shield plate covering the vicinity of the substrate; and a case disposed so as to cover the lens barrel, the substrate, and the shield plate, wherein: the shield plate is structured having a contacting portion that contacts another member so as to constrain movement in the optical axial direction, and a biasing portion that contacts the coupling so as to receive a biasing force in the optical axial direction.

Abstract: A light-emitting thyristor includes a first semiconductor layer of a P type, a second semiconductor layer of an N type arranged adjacent to the first semiconductor layer; a third semiconductor layer of the P type arranged adjacent to the second semiconductor layer; and a fourth semiconductor layer of the N type arranged adjacent to the third semiconductor layer. A part of the first semiconductor layer is an active layer adjacent to the second semiconductor layer. A dopant concentration of the active layer is higher than or equal to a dopant concentration of the third semiconductor layer. A thickness of the third semiconductor layer is thinner than a thickness of the second semiconductor layer. A dopant concentration of the second semiconductor layer is lower than the dopant concentration of the third semiconductor layer.

Abstract: A light-emitting thyristor includes a first semiconductor layer of a first conductivity type; a second semiconductor layer of a second conductivity type arranged adjacent to the first semiconductor layer; a third semiconductor layer of the first conductivity type arranged adjacent to the second semiconductor layer; and a fourth semiconductor layer of the second conductivity type arranged adjacent to the third semiconductor layer. The first semiconductor layer includes an active layer adjacent to the second semiconductor layer, the second semiconductor layer includes a first layer adjacent to the active layer and a second layer arranged between the first layer and the third semiconductor layer, and the first layer has a band gap wider than a band gap of the active layer and a band gap of the second layer.

Abstract: An exposure device includes a plate member, a plurality of light-emitting elements, and an optical system. The plate member extends in both a first direction and a second direction intersecting with the first direction. The light-emitting elements are disposed on the plate member side by side in the first direction. The light-emitting elements emit respective light beams in the second direction. The optical system is disposed on the plate member and faces the light-emitting elements in the second direction. The optical system performs imaging of the light beams emitted by the respective light-emitting elements.

Abstract: An exposure device includes a plate member, a plurality of light-emitting elements, and an optical system. The plate member extends in both a first direction and a second direction intersecting with the first direction. The light-emitting elements are disposed on the plate member side by side in the first direction. The light-emitting elements emit respective light beams in the second direction. The optical system is disposed on the plate member and faces the light-emitting elements in the second direction. The optical system performs imaging of the light beams emitted by the respective light-emitting elements.