Abstract: A radio-frequency module includes a hybrid filter for 5th Generation New Radio (5G-NR) n77, a filter for 5G-NR n79, power amplifiers, a third inductor coupled to the power amplifier, and a fourth inductor coupled to a power amplifier. When a module substrate is viewed in plan view, the power amplifiers are disposed in a first quadrant, the third inductor and the fourth inductor are disposed in a second quadrant, the hybrid filter and the filter are disposed in a third quadrant, the power amplifier is disposed closer to a reference point than the power amplifier, the third inductor is disposed closer to the reference point than the fourth inductor, and the hybrid filter is disposed closer to the reference point than the filter.

Abstract: A radio-frequency module includes a module substrate, a hybrid filter for 5th Generation New Radio (5G-NR) n77 including a first acoustic wave resonator element, a first inductor, and a first capacitor, a filter for 5G-NR n79 including a second acoustic wave resonator element and a second inductor, power amplifiers, a third inductor coupled between the power amplifier and the hybrid filter, and a fourth inductor coupled between the power amplifier and the filter. The first inductor, the second inductor, the third inductor, and the fourth inductor are disposed at a major surface or inside the module substrate. The distance between the first inductor and the third inductor is larger than the distance between the second inductor and the fourth inductor.

Abstract: A radio-frequency module includes a module substrate having main surfaces opposite to each other, a hybrid filter having a first acoustic wave resonator, a first inductor, and a first capacitor, a switch for connecting and disconnecting an antenna connection terminal and the hybrid filter, and a coupler disposed on a path linking the antenna connection terminal and the switch. The first acoustic wave resonator is disposed on the main surface, the switch is included in a semiconductor IC disposed on the main surface, the coupler is disposed inside the module substrate, and in plan view of the module substrate, the semiconductor IC at least partially overlaps the first acoustic wave resonator, and the semiconductor IC and the coupler at least partially overlaps.

Abstract: A radio-frequency module includes a module substrate having main surfaces opposite to each other, a hybrid filter having a first acoustic wave resonator, a first inductor, and a first capacitor, and a first radio-frequency component, wherein a pass band width of the hybrid filter is greater than a resonant band width of the first acoustic wave resonator, one of the first acoustic wave resonator, the first inductor, and the first capacitor is disposed on the main surface, and the first radio-frequency component is disposed on the main surface.

Abstract: A hybrid filter includes a module substrate having a major surface and a major surface that are opposite to each other, acoustic wave resonator elements disposed at the module substrate, inductors disposed at the module substrate, and a capacitor disposed at the module substrate. The pass band of the hybrid filter is wider than the resonance band width of the acoustic wave resonator elements. One of the acoustic wave resonator elements, the inductors, and the capacitor is a first circuit element, and the first circuit element is disposed at the major surface. Another of the acoustic wave resonator elements, the inductors, and the capacitor is a second circuit element, and the second circuit element is disposed at the major surface.

Abstract: In the radio frequency module, a first electronic component and a second electronic component are mounted on a principal surface of a mounting board. A resin layer covers an outer perimeter surface of the first electronic component and an outer perimeter surface of the second electronic component. A conductive layer covers the resin layer and overlaps the first electronic component and the second electronic component in a plan view. The conductive layer includes a first conductive portion and a second conductive portion. The first conductive portion is positioned in between the first RF terminal of the first electronic component and the second RF terminal of the second electronic component in the plan view. The second conductive portion is adjacent to the first conductive portion in the plan view. The resistivity of the first conductive portion is higher than the resistivity of the second conductive portion.

Abstract: The total sum of wiring lengths between reception filters and low-noise amplifiers is reduced. A high frequency module includes a mounting board, a plurality of inductors, a plurality of reception filters, and an IC component. The plurality of inductors are mounted on a first main surface of the mounting board. The plurality of reception filters are mounted on the first main surface of the mounting board. The IC component is mounted on a second main surface of the mounting board and includes a low-noise amplifier. A rectangular region in which the plurality of inductors are positioned overlaps with the IC component when viewed in plan from a thickness direction of the mounting board. An electronic component that is closest to each of three or more sides out of four sides of the rectangular region is at least one of the plurality of reception filters.

Abstract: An electronic component includes: a first substrate having a first surface; a second substrate having a second surface facing the first surface across an air gap; a first coil pattern that is located on the first surface so as to face the second surface across the air gap; a second coil pattern that is located in a second region on the second surface and faces the first surface across the air gap, at least a part of the second region overlapping with a first region in plan view, the first region being formed of a region in which the first coil pattern is located and a region surrounded by the first coil pattern; and a connection terminal connecting the first coil pattern and the second coil pattern.

Abstract: An acoustic wave device includes: a first substrate that has a first surface and a second surface, the second surface being an opposite surface of the first substrate from the first surface; an acoustic wave element that is located on the first surface; a wiring portion that electrically connects the acoustic wave element and a metal portion through a through hole, the metal portion being located on the second surface, the through hole penetrating through the first substrate; and a sealing portion that is located on the first surface so as to surround the acoustic wave element, overlaps with at least a part of the through hole in plan view, and seals the acoustic wave element in an air gap.

Abstract: A multiplexer includes: a substrate having a surface; another substrate having another surface facing the surface across an air gap; a filter that is located on the surface, and includes first series resonators in a first series pathway from a common terminal to a terminal, and first parallel resonators in first parallel pathways; another filter that is located on the another surface, and includes second series resonators in a second series pathway from the common terminal to another terminal, and second parallel resonators in second parallel pathways, a second parallel resonator closest to the another terminal and a second series resonator closest to the another terminal not overlapping with the first series pathway, at least a part of the second parallel pathways overlapping with at least a part of first pathways between the first series pathway and the first parallel resonators, the first parallel resonators, and the first series pathway.

Abstract: A communication module includes: a first substrate having a first surface; a second substrate having a second surface, the second surface facing the first surface across an air gap; a first filter located on the first surface, a passband of the first filter being either one of a transmit band and a receive band of a first band, the first band being a frequency division duplex band; and a second filter located on the second surface, at least a part of the second filter overlapping with at least a part of the first filter in a stacking direction in which the first substrate and the second substrate are stacked, a passband of the second filter being at least one of a transmit band and a receive band of a second band, the second band differing from the first band.

Abstract: An acoustic wave device includes: first and second terminals located on a first surface of a first substrate; a third terminal that is located on the first surface and is a ground terminal; series resonators located on a second surface of the first substrate and electrically connected in series with a path between the first and second terminals; a parallel resonator that is located on the second surface and has a first end electrically connected to the path and a second end electrically connected to the third terminal; and a fourth terminal located on the first surface, at least a part of the fourth terminal overlapping with, in a thickness direction of the first substrate, at least one of one or more first series resonators of the series resonators, the one or more first series resonators having both ends to which other series resonators are electrically connected.

Abstract: A multiplexer includes: a filter located on a surface of a substrate and including first series and parallel resonators and a first wiring line; and another filter located on another surface of another substrate and including second series and parallel resonators and a second wiring line, each of first resonators among the second series and parallel resonators overlapping with the first series and parallel resonators, and/or the first wiring line, each of second resonators other than the first resonators among the second series and parallel resonators overlapping with none of the first series and parallel resonators and the first wiring line, when capacitances of series and parallel resonators in first basic sections including the first resonators are represented by Cs1 and Cp1, and capacitances of series and parallel resonators in second basic sections not including the first resonators are represented by Cs2 and Cp1, Cp1/Cs1 being less than Cp2/Cs2.

Abstract: An electronic component includes: a substrate; a device chip including a functional element located on a lower surface thereof and mounted on an upper surface of the substrate so that the functional element faces the upper surface of the substrate across an air gap; a ring-shaped metal layer located on the upper surface of the substrate and surrounding the device chip in plan view, a side surface of the ring-shaped metal layer being located further in than a side surface of the substrate; a metal sealing portion surrounding the device chip in plan view and bonding with an upper surface of the ring-shaped metal layer, a side surface of the metal sealing portion being located further out than the side surface of the ring-shaped metal layer; and a metal film located on the side surface of the metal sealing portion and the side surface of the ring-shaped metal layer.

Abstract: An acoustic wave device includes: a first substrate that has a first surface and a second surface, the second surface being an opposite surface of the first substrate from the first surface; an acoustic wave element that is located on the first surface; a wiring portion that electrically connects the acoustic wave element and a metal portion through a through hole, the metal portion being located on the second surface, the through hole penetrating through the first substrate; and a sealing portion that is located on the first surface so as to surround the acoustic wave element, overlaps with at least a part of the through hole in plan view, and seals the acoustic wave element in an air gap.

Abstract: A multiplexer includes: first and second substrate respectively having first and second surfaces facing each other across an air gap; a first filter including first resonators located on the first surface and connected between a common terminal and a first terminal; a second filter including second resonators located on the second surface and connected between the common terminal and a second terminal, a first resonator connected in series between the common terminal and the first terminal and closest to the common terminal overlapping with a second resonator connected in series between the common terminal and the second terminal and closest to the common terminal, first resonators other than the first resonator closest to the common terminal not overlapping with the second resonators, second resonators other than the second resonator closest to the common terminal not overlapping with the first resonators.

Abstract: A communication module includes: a first substrate having a first surface; a second substrate having a second surface, the second surface facing the first surface across an air gap; a first filter located on the first surface, a passband of the first filter being either one of a transmit band and a receive band of a first band, the first band being a frequency division duplex band; and a second filter located on the second surface, at least a part of the second filter overlapping with at least a part of the first filter in a stacking direction in which the first substrate and the second substrate are stacked, a passband of the second filter being at least one of a transmit band and a receive band of a second band, the second band differing from the first band.

Abstract: A multiplexer includes: a substrate having a surface; another substrate having another surface facing the surface across an air gap; a filter that is located on the surface, and includes first series resonators in a first series pathway from a common terminal to a terminal, and first parallel resonators in first parallel pathways; another filter that is located on the another surface, and includes second series resonators in a second series pathway from the common terminal to another terminal, and second parallel resonators in second parallel pathways, a second parallel resonator closest to the another terminal and a second series resonator closest to the another terminal not overlapping with the first series pathway, at least a part of the second parallel pathways overlapping with at least a part of first pathways between the first series pathway and the first parallel resonators, the first parallel resonators, and the first series pathway.

Abstract: An acoustic wave device includes: first and second terminals located on a first surface of a first substrate; a third terminal that is located on the first surface and is a ground terminal; series resonators located on a second surface of the first substrate and electrically connected in series with a path between the first and second terminals; a parallel resonator that is located on the second surface and has a first end electrically connected to the path and a second end electrically connected to the third terminal; and a fourth terminal located on the first surface, at least a part of the fourth terminal overlapping with, in a thickness direction of the first substrate, at least one of one or more first series resonators of the series resonators, the one or more first series resonators having both ends to which other series resonators are electrically connected.

Abstract: An acoustic wave device includes: a first piezoelectric substrate; a first IDT that includes a plurality of first electrode fingers and is located on a first surface of the first piezoelectric substrate; a second piezoelectric substrate that is located above the first surface; and a second IDT that is located on a second surface of the second piezoelectric substrate, and includes a plurality of second electrode fingers that are non-parallel to the plurality of first electrode fingers, the second surface of the second piezoelectric substrate facing the first surface across an air gap.