Patents by Inventor Takumasa Nishida
Takumasa Nishida has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 9824863Abstract: A plasma technique in which a plasma generation technique frequently used in various fields including a semiconductor manufacturing process is used, and generation of plasma instability (high-speed impedance change of plasma) can efficiently be suppressed and controlled in order to manufacture stable products. An apparatus includes a processing chamber, a surrounding member disposed so as to surround the processing chamber, an RF induction coil disposed above the top surface, a direct-current magnetic field generator for supplying a direct-current magnetic field to the inner space, and an RF cut filter connected to a direct current (DC) power supply and connected to the direct-current magnetic field generator. The RF cut filter includes a first capacitor connected to a positive terminal of the DC power supply and to ground, and a second capacitor connected to a negative terminal of the DC power supply and to ground.Type: GrantFiled: February 27, 2014Date of Patent: November 21, 2017Assignee: Lam Research CorporationInventors: Takumasa Nishida, Shu Nakajima
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Publication number: 20140174663Abstract: A plasma technique in which a plasma generation technique frequently used in various fields including a semiconductor manufacturing process is used, and generation of plasma instability (high-speed impedance change of plasma) can efficiently be suppressed and controlled in order to manufacture stable products. An apparatus includes a processing chamber, a surrounding member disposed so as to surround the processing chamber, an RF induction coil disposed above the top surface, a direct-current magnetic field generator for supplying a direct-current magnetic field to the inner space, and an RF cut filter connected to a direct current (DC) power supply and connected to the direct-current magnetic field generator. The RF cut filter includes a first capacitor connected to a positive terminal of the DC power supply and to ground, and a second capacitor connected to a negative terminal of the DC power supply and to ground.Type: ApplicationFiled: February 27, 2014Publication date: June 26, 2014Applicant: Lam Research CorporationInventors: Takumasa Nishida, Shu Nakajima
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Patent number: 8691048Abstract: A plasma technique in which a plasma generation technique frequently used in various fields including a semiconductor manufacturing process is used, and generation of plasma instability (high-speed impedance change of a plasma) can efficiently be suppressed and controlled in order to manufacture stable products. An apparatus includes a processing chamber, a surrounding member disposed around the processing chamber, an RF induction coil disposed outside the dielectric member, and an air-core coil for generating a direct-current magnetic field supplied to the inner space. The surrounding member seals an opening on top of the processing chamber to create an inner space, and the RF induction coil is above the top surface of the surrounding member.Type: GrantFiled: June 8, 2012Date of Patent: April 8, 2014Assignee: Lam Research CorporationInventors: Takumasa Nishida, Shu Nakajima
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Publication number: 20120247680Abstract: A plasma technique in which a plasma generation technique frequently used in various fields including a semiconductor manufacturing process is used, and generation of plasma instability (high-speed impedance change of a plasma) can efficiently be suppressed and controlled in order to manufacture stable products. An apparatus includes a processing chamber, a surrounding member disposed around the processing chamber, an RF induction coil disposed outside the dielectric member, and an air-core coil for generating a direct-current magnetic field supplied to the inner space. The surrounding member seals an opening on top of the processing chamber to create an inner space, and the RF induction coil is above the top surface of the surrounding member.Type: ApplicationFiled: June 8, 2012Publication date: October 4, 2012Inventors: Takumasa Nishida, Shu Nakajima
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Patent number: 8216421Abstract: A plasma technique in which a plasma generation technique frequently used in various fields including a semiconductor manufacturing process is used, and generation of plasma instability (high-speed impedance change of a plasma) can efficiently be suppressed and controlled in order to manufacture stable products. In a method of disposing an object in a chamber and generating the plasma to treat the object, the chamber is sealed by a surrounding member so as to have an inner space, with at least a part of the member including a dielectric material, an RF induction coil is disposed outside the dielectric member, and a direct-current electric field is supplied into the inner space by a method of passing a direct current through the RF induction coil or another method, so that the plasma is stabilized.Type: GrantFiled: December 5, 2007Date of Patent: July 10, 2012Assignee: Lam Research CorporationInventors: Takumasa Nishida, Shu Nakajima
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Publication number: 20080173403Abstract: A plasma technique in which a plasma generation technique frequently used in various fields including a semiconductor manufacturing process is used, and generation of plasma instability (high-speed impedance change of a plasma) can efficiently be suppressed and controlled in order to manufacture stable products. In a method of disposing an object in a chamber and generating the plasma to treat the object, the chamber is sealed by a surrounding member so as to have an inner space, with at least a part of the member including a dielectric material, an RF induction coil is disposed outside the dielectric member, and a direct-current electric field is supplied into the inner space by a method of passing a direct current through the RF induction coil or another method, so that the plasma is stabilized.Type: ApplicationFiled: December 5, 2007Publication date: July 24, 2008Inventors: Takumasa Nishida, Shu Nakajima
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Patent number: 7320941Abstract: There is disclosed a plasma technique in which a plasma generation technique frequently used in various fields including a semiconductor manufacturing process is used, and generation of plasma instability (high-speed impedance change of a plasma) can efficiently be suppressed and controlled in order to manufacture stable products. In a method of disposing an object in a chamber and generating the plasma to treat the object, the chamber is sealed by a surrounding member so as to have an inner space, at least a part of the member includes a dielectric material, an RF induction coil is disposed outside the dielectric member, and a direct-current electric field is supplied into the inner space by a method of passing a direct current through the RF induction coil or another method, so that the plasma is stabilized.Type: GrantFiled: April 30, 2003Date of Patent: January 22, 2008Assignee: Lam Research CorporationInventors: Takumasa Nishida, Shu Nakajima
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Publication number: 20040003897Abstract: There is disclosed a plasma technique in which a plasma generation technique frequently used in various fields including a semiconductor manufacturing process is used, and generation of plasma instability (high-speed impedance change of a plasma) can efficiently be suppressed and controlled in order to manufacture stable products. In a method of disposing an object in a chamber and generating the plasma to treat the object, the chamber is sealed by a surrounding member so as to have an inner space, at least a part of the member includes a dielectric material, an RF induction coil is disposed outside the dielectric member, and a direct-current electric field is supplied into the inner space by a method of passing a direct current through the RF induction coil or another method, so that the plasma is stabilized.Type: ApplicationFiled: April 30, 2003Publication date: January 8, 2004Applicant: Lam Research CorporationInventors: Takumasa Nishida, Shu Nakajima