Abstract: According to one embodiment, an electronic apparatus includes a camera, a first polarizer, a second polarizer, a liquid crystal panel, and a controller controlling the liquid crystal panel. The liquid crystal panel includes a first region and a second region. The controller controls a first opening mode of transmitting light through the first region and the second region, and a second opening mode of making a quantity of light transmitted through the first region smaller than a quantity of light transmitted through the second region.

Abstract: A display device includes a first substrate, a gate wiring on the first substrate, a first insulating layer on the gate wiring, a source wiring on the first insulating layer and intersecting the gate wiring, a second insulating layer on the source wiring, a pixel electrode on the second insulating layer; and a first buffer layer between the first substrate and the first insulating layer. A refractive index of the first buffer layer is higher than a refractive index of the first substrate, at an interface between the first buffer layer and the first substrate, and the refractive index of the first buffer layer is lower than a refractive index of the first insulating layer, at an interface between the first buffer layer and the first insulating layer.

Abstract: According to one embodiment, an electronic apparatus includes a camera, a first polarizer, a second polarizer, a liquid crystal panel, and a controller controlling the liquid crystal panel. The liquid crystal panel includes a first region and a second region. The controller controls a first opening mode of transmitting light through the first region and the second region, and a second opening mode of making a quantity of light transmitted through the first region smaller than a quantity of light transmitted through the second region.

Abstract: According to one embodiment, an electronic device includes a liquid crystal panel and a camera. The liquid crystal panel includes a display area and an incident light control area. The display area includes a pixel electrode. The camera overlaps the incident light control area. The incident light control area includes an annular line, and a control electrode formed inside the annular line to be connected to the annular line. A time to apply a voltage to the control electrode is shorter than a time to apply a voltage to the pixel electrode.

Abstract: According to one embodiment, a semiconductor device includes a first gate electrode formed to be integrated with a scanning line, an oxide semiconductor layer, a first signal line and a second signal line in contact with the oxide semiconductor layer, and a second gate electrode disposed opposing the first gate electrode with the oxide semiconductor layer interposed therebetween, and connected to the first gate electrode, wherein the second gate electrode does not overlap the first signal line, but overlaps the second signal line.

Abstract: According to one embodiment, an electronic apparatus includes a camera, a liquid crystal panel including a display portion overlaid on the camera, a light guide having a first side surface and a main surface opposed to the liquid crystal panel and a first through hole, and a light source opposed to the first side surface. The camera is provided in the first through hole.

Abstract: According to one embodiment, an electronic apparatus includes a camera, a liquid crystal panel including a display portion overlaid on the camera, a light guide having a first side surface and a main surface opposed to the liquid crystal panel and a first through hole, and a light source opposed to the first side surface. The camera is provided in the first through hole.

Abstract: According to one embodiment, an electronic apparatus includes a camera, a first polarizer, a second polarizer, a liquid crystal panel, and a controller controlling the liquid crystal panel. The liquid crystal panel includes a first region and a second region. The controller controls a first opening mode of transmitting light through the first region and the second region, and a second opening mode of making a quantity of light transmitted through the first region smaller than a quantity of light transmitted through the second region.

Abstract: According to one embodiment, an electronic apparatus includes a camera, a first polarizer, a second polarizer, a liquid crystal panel, and a controller controlling the liquid crystal panel. The liquid crystal panel includes a first region and a second region. The controller controls a first opening mode of transmitting light through the first region and the second region, and a second opening mode of making a quantity of light transmitted through the first region smaller than a quantity of light transmitted through the second region.

Abstract: According to one embodiment, an electronic equipment includes a liquid crystal panel including a display portion, a polarizer superposed on the display portion, and a detection element superposed on the liquid crystal panel and the polarizer to detect infrared rays through the liquid crystal panel and the polarizer.

Abstract: The purpose of the present invention is to form a semiconductor device in which an active area laminated on a PZT (lead zirconate titanate (PbZrTiO3) sensor having a piezoelectric effect. The main structure of the present invention is as follows. A semiconductor device having a PZT (lead zirconate titanate (PbZrTiO3)) sensor including: the PZT sensor including a lower electrode formed on a glass substrate, a PZT, an upper electrode, a first inorganic insulating film covering the upper electrode, and an upper wiring formed on the first inorganic insulating film and connected to the upper electrode through a first through-hole formed in the first inorganic insulating film; in which a polyimide film is formed over the PZT sensor; a plurality of TFTs are formed on the polyimide film, and a thickness of the polyimide film is 5 ?m or more.

Abstract: The purpose of the present invention is to suppress a change in characteristics of a TFT using an oxide semiconductor film caused by that oxygen in the oxide semiconductor film is extracted by metal electrode. The main structure of the present invention is as follows. A semiconductor device having a TFT, in which a gate insulating film is formed on a gate electrode, and an oxide semiconductor film is formed on the gate insulating film; the oxide semiconductor film including a channel region, a drain region, and a source region; in which a metal nitride film is formed on a top surface of the gate electrode in an opposing portion to the channel region in a plan view; and the metal nitride film is not formed at a part of the top surface of the gate electrode.

Abstract: According to one embodiment, a semiconductor device includes a first insulating film formed of silicon nitride, a second insulating film disposed above the first insulating film and formed of silicon oxide, including a first region and a peripheral region surrounding the first region and thinner than the first region, an oxide semiconductor disposed on the second insulating film and intersecting the first region, a source electrode overlapping the peripheral region and a drain electrode overlapping the peripheral region. The first region is located between the source electrode and the drain electrode and separated from the source electrode and the drain electrode.

Abstract: A semiconductor device includes a thin-film transistor. The thin-film transistor comprises an oxide semiconductor layer, a gate insulating layer, a gate electrode overlapped on the oxide semiconductor layer through the gate insulating layer, a source electrode in contact with the oxide semiconductor layer, a drain electrode in contact with the oxide semiconductor layer and n (n is a natural number) metal layer(s) in contact with the oxide semiconductor layer and disposed across the oxide semiconductor layer between the source electrode and the drain electrode. The oxide semiconductor layer has (n+1) channel regions between the source electrode and the drain electrode in a plan view.

Abstract: A semiconductor device includes a thin-film transistor. The thin-film transistor comprises an oxide semiconductor layer, a gate insulating layer, a gate electrode overlapped on the oxide semiconductor layer through the gate insulating layer, a source electrode in contact with the oxide semiconductor layer, a drain electrode in contact with the oxide semiconductor layer and a first metal layer in contact with the oxide semiconductor layer and disposed between the source electrode and the drain electrode at a distance from the source electrode and the drain electrode.

Abstract: According to one embodiment, an electronic device includes a liquid crystal panel and a camera. The liquid crystal panel includes a display area and an incident light control area. The display area includes a pixel electrode. The camera overlaps the incident light control area. The incident light control area includes an annular line, and a control electrode formed inside the annular line to be connected to the annular line. A time to apply a voltage to the control electrode is shorter than a time to apply a voltage to the pixel electrode.

Abstract: The purpose of the present invention is to suppress a variation in a threshold voltage (? Vth) in a Thin Film Transistor (TFT) using an oxide semiconductor. The present invention takes a structure as follows to attain this purpose. A semiconductor device having TFT using an oxide semiconductor including: a channel region, a source region, a drain region, and a transition region between the channel region and the source region and between the channel region and the drain region, in which a resistivity of the transition region is smaller than that of the channel region, and larger than that of the source region or the drain region; a source electrode is formed overlapping the source region, and a drain electrode is formed overlapping the drain region; and a thickness of the transition region of the oxide semiconductor is larger than a thickness of the channel region of the oxide semiconductor.

Abstract: According to one embodiment, a method for manufacturing a semiconductor device, includes forming a first insulating film which covers a gate electrode, forming an island-shaped oxide semiconductor in contact with the first insulating film, forming a second insulating film which covers the oxide semiconductor, forming a source electrode in contact with the oxide semiconductor, forming a drain electrode in contact with the oxide semiconductor, forming a third insulating film which covers the source electrode and the drain electrode and forming a channel region between the source electrode and the drain electrode by supplying oxygen from the third insulating film to the oxide semiconductor via the second insulating film.

Abstract: According to one embodiment, an electronic equipment includes a liquid crystal panel including a display portion, a polarizer superposed on the display portion, and a detection element superposed on the liquid crystal panel and the polarizer to detect infrared rays through the liquid crystal panel and the polarizer.

Abstract: According to one embodiment, an electronic equipment includes a liquid crystal panel including a display portion, a polarizer superposed on the display portion, and a detection element superposed on the liquid crystal panel and the polarizer to detect infrared rays through the liquid crystal panel and the polarizer.