Patents by Inventor Takuya Yanagisawa
Takuya Yanagisawa has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 11998992Abstract: A surface coated cutting tool comprises a tool body. A TiAlCN layer having an average layer thickness of 2.0 to 20.0 ?m and represented by (Ti(1-x)Alx)(CyN(1-y)) is provided on the surface of the tool body and has an average content ratio xavg of Al and an average content ratio yavg of C that satisfy 0.60?xavg?0.95 and 0.00?yavg?0.05, an area ratio occupied by crystal grains having an NaCl-type face-centered cubic structure that satisfies 90 area % or more, and crystal grains satisfying 0.01 ?m<d?0.20 ?m in 10 to 40 area %. An average maximum length in a direction parallel to the surface of the tool body in each region in which the crystal grains having d of 0.01 ?m<d?0.20 ?m are adjacent and connected to each other in the upper layer side region is 5.0 ?m or less.Type: GrantFiled: September 27, 2019Date of Patent: June 4, 2024Assignee: MITSUBISHI MATERIALS CORPORATIONInventors: Takuya Ishigaki, Kousuke Yanagisawa, Hiroki Nakamura, Hisashi Honma
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Publication number: 20240175988Abstract: A control unit varies a drive waveform of a scanning angle for moving a spot irradiation position in a second direction according to a length of a spot in the second direction. Specifically, the control unit reduces the number of segments in the second direction followed by the spot irradiation position in a case where the length of the spot in the second direction is a predetermined first length, as compared with the number of segments in the second direction followed by the spot irradiation position in a case where the length of the spot in the second direction is a second length shorter than the first length.Type: ApplicationFiled: March 26, 2021Publication date: May 30, 2024Inventors: Takuya SHIROTO, Takuma YANAGISAWA
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Publication number: 20240168135Abstract: A control unit increases the number of segments in a second direction followed by a spot irradiation position in a case where a length of an overall field of view in the second direction is a predetermined first length, as compared with the number of segments in the second direction followed by the spot irradiation position in a case where the length of the overall field of view in the second direction is a second length shorter than the first length. Further, the control unit expands a range followed by the spot irradiation position in a case where a size of the overall field of view when viewed from a third direction is a first size, as compared with a range followed by the spot irradiation position in a case where the size of the overall field of view when viewed from the third direction is a second size smaller than the first size.Type: ApplicationFiled: March 26, 2021Publication date: May 23, 2024Inventors: Takuya SHIROTO, Takuma YANAGISAWA
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Patent number: 11926923Abstract: An indium phosphide single crystal including a straight body portion having a cylindrical shape, wherein a residual strain in a tangential direction in an outer circumferential portion is a compressive strain, the outer circumferential portion extending between an inner circumferential surface located 10 mm inward from an outer circumferential surface of the straight body portion toward a central axis and a location located 5 mm inward from the outer circumferential surface. There is also provided an indium phosphide single crystal substrate, wherein a residual strain in a tangential direction in an outer circumferential portion is a compressive strain, the outer circumferential portion extending between an inner circumference located 10 mm inward from an outer circumference toward a center and a location located 5 mm inward from the outer circumference.Type: GrantFiled: August 7, 2018Date of Patent: March 12, 2024Assignee: SUMITOMO ELECTRIC INDUSTRIES, LTD.Inventors: Katsushi Hashio, Kazuaki Kounoike, Takuya Yanagisawa
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Patent number: 11456363Abstract: An indium phosphide crystal substrate has a diameter of 100-205 mm and a thickness of 300-800 ?m and includes any of a flat portion and a notch portion. In any of a first flat region and a first notch region, when an atomic concentration of sulfur is from 2.0×1018 to 8.0×1018 cm?3, the indium phosphide crystal substrate has an average dislocation density of 10-500 cm?2, and when am atomic concentration of tin is from 1.0×1018 to 4.0×1018 cm?3 or an atomic concentration of iron is from 5.0×1015 to 1.0×1017 cm?3, the indium phosphide crystal substrate has an average dislocation density of 500-5000 cm?2.Type: GrantFiled: February 23, 2018Date of Patent: September 27, 2022Assignee: Sumitomo Electric Industries, Ltd.Inventors: Muneyuki Nishioka, Kazuaki Konoike, Takuya Yanagisawa, Yasuaki Higuchi, Yoshiaki Hagi
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Publication number: 20220213618Abstract: An indium phosphide single-crystal body has an oxygen concentration of less than 1×1016 atoms·cm?3, and includes a straight body portion having a cylindrical shape, wherein a diameter of the straight body portion is more than or equal to 100 mm and less than or equal to 150 mm or is more than 100 mm and less than or equal to 150 mm. An indium phosphide single-crystal substrate has an oxygen concentration of less than 1×1016 atoms·cm?3, wherein a diameter of the indium phosphide single-crystal substrate is more than or equal to 100 mm and less than or equal to 150 mm or is more than 100 mm and less than or equal to 150 mm.Type: ApplicationFiled: March 25, 2022Publication date: July 7, 2022Applicant: Sumitomo Electric Industries, Ltd.Inventors: Takuya Yanagisawa, Kazuaki Konoike, Katsushi Hashio
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Patent number: 11313050Abstract: An indium phosphide single-crystal body has an oxygen concentration of less than 1×1016 atoms·cm?3, and includes a straight body portion having a cylindrical shape, wherein a diameter of the straight body portion is more than or equal to 100 mm and less than or equal to 150 mm or is more than 100 mm and less than or equal to 150 mm. An indium phosphide single-crystal substrate has an oxygen concentration of less than 1×1016 atoms·cm?13, wherein a diameter of the indium phosphide single-crystal substrate is more than or equal to 100 mm and less than or equal to 150 mm or is more than 100 mm and less than or equal to 150 mm.Type: GrantFiled: July 3, 2018Date of Patent: April 26, 2022Assignee: Sumitomo Electric Industries, Ltd.Inventors: Takuya Yanagisawa, Kazuaki Konoike, Katsushi Hashio
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Patent number: 11094537Abstract: Provided are a group III nitride composite substrate having a low sheet resistance and produced with a high yield, and a method for manufacturing the same, as well as a method for manufacturing a group III nitride semiconductor device using the group III nitride composite substrate. A group III nitride composite substrate includes a group III nitride film and a support substrate formed from a material different in chemical composition from the group III nitride film. The group III nitride film is joined to the support substrate in one of a direct manner and an indirect manner. The group III nitride film has a thickness of 10 ?m or more. A sheet resistance of a group III-nitride-film-side main surface is 200 ?/sq or less.Type: GrantFiled: February 11, 2020Date of Patent: August 17, 2021Assignee: Sumitomo Electric Industries, Ltd.Inventors: Keiji Ishibashi, Akihiro Hachigo, Yuki Hiromura, Naoki Matsumoto, Seiji Nakahata, Fumitake Nakanishi, Takuya Yanagisawa, Koji Uematsu, Yuki Seki, Yoshiyuki Yamamoto, Yusuke Yoshizumi, Hidenori Mikami
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Patent number: 11051537Abstract: [Problem] To provide a sesame-containing liquid seasoning which has an enhanced aroma unique to sesame and also has an original aroma which is irresistible and addictive. [Solution] The present invention is a liquid seasoning containing sesame, including a linear alkanethiol and a dimethylpyrazine which is at least one of 2,5-dimethylpyrazine and 2,6-dimethylpyrazine, wherein the ratio of the peak area of the linear alkanethiol to the peak area of the dimethylpyrazine is 0.05 or more and less than 1.0 when the aroma components of the liquid seasoning are measured by solid phase microextraction-gas chromatography mass spectrometry. Such a liquid seasoning shows an enhanced aroma unique to sesame and an original aroma which is irresistible and addictive.Type: GrantFiled: August 31, 2017Date of Patent: July 6, 2021Assignee: KEWPIE CORPORATIONInventor: Takuya Yanagisawa
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Patent number: 10971374Abstract: A semi-insulating compound semiconductor substrate includes a semi-insulating compound semiconductor, the semi-insulating compound semiconductor substrate being configured such that, on a major plane having a plane orientation of (100), a standard deviation/average value of specific resistance measured at intervals of 0.1 mm along equivalent four directions in a <110> direction from a center of the major plane, and a standard deviation/average value of specific resistance measured at intervals of 0.1 mm along equivalent four directions in a <100> direction from the center of the major plane are each not more than 0.1.Type: GrantFiled: September 21, 2017Date of Patent: April 6, 2021Assignee: SUMITOMO ELECTRIC INDUSTRIES, LTD.Inventors: Katsushi Hashio, Kazuaki Konoike, Takuya Yanagisawa
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Publication number: 20210040644Abstract: An indium phosphide single crystal including a straight body portion having a cylindrical shape, wherein a residual strain in a tangential direction in an outer circumferential portion is a compressive strain, the outer circumferential portion extending between an inner circumferential surface located 10 mm inward from an outer circumferential surface of the straight body portion toward a central axis and a location located 5 mm inward from the outer circumferential surface. There is also provided an indium phosphide single crystal substrate, wherein a residual strain in a tangential direction in an outer circumferential portion is a compressive strain, the outer circumferential portion extending between an inner circumference located 10 mm inward from an outer circumference toward a center and a location located 5 mm inward from the outer circumference.Type: ApplicationFiled: August 7, 2018Publication date: February 11, 2021Applicant: SUMITOMO ELECTRIC INDUSTRIES, LTD.Inventors: Katsushi HASHIO, Kazuaki KOUNOIKE, Takuya YANAGISAWA
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Publication number: 20200305480Abstract: [Problem] To provide a sesame-containing liquid seasoning which has an enhanced aroma unique to sesame and also has an original aroma which is irresistible and addictive. [Solution] The present invention is a liquid seasoning containing sesame, including a linear alkanethiol and a dimethylpyrazine which is at least one of 2,5-dimethylpyrazine and 2,6-dimethylpyrazine, wherein the ratio of the peak area of the linear alkanethiol to the peak area of the dimethylpyrazine is 0.05 or more and less than 1.0 when the aroma components of the liquid seasoning are measured by solid phase microextraction-gas chromatography mass spectrometry. Such a liquid seasoning shows an enhanced aroma unique to sesame and an original aroma which is irresistible and addictive.Type: ApplicationFiled: August 31, 2017Publication date: October 1, 2020Applicant: KEWPIE CORPORATIONInventor: Takuya YANAGISAWA
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Publication number: 20200176305Abstract: Provided are a group III nitride composite substrate having a low sheet resistance and produced with a high yield, and a method for manufacturing the same, as well as a method for manufacturing a group III nitride semiconductor device using the group III nitride composite substrate. A group III nitride composite substrate includes a group III nitride film and a support substrate formed from a material different in chemical composition from the group III nitride film. The group III nitride film is joined to the support substrate in one of a direct manner and an indirect manner. The group III nitride film has a thickness of 10 ?m or more. A sheet resistance of a group III-nitride-film-side main surface is 200 ?/sq or less.Type: ApplicationFiled: February 11, 2020Publication date: June 4, 2020Applicant: SUMITOMO ELECTRIC INDUSTRIES, LTD.Inventors: Keiji ISHIBASHI, Akihiro HACHIGO, Yuki HIROMURA, Naoki MATSUMOTO, Seiji NAKAHATA, Fumitake NAKANISHI, Takuya YANAGISAWA, Koji UEMATSU, Yuki SEKI, Yoshiyuki YAMAMOTO, Yusuke YOSHIZUMI, Hidenori MIKAMI
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Patent number: 10600676Abstract: Provided are a group III nitride composite substrate having a low sheet resistance and produced with a high yield, and a method for manufacturing the same, as well as a method for manufacturing a group III nitride semiconductor device using the group III nitride composite substrate. A group III nitride composite substrate includes a group III nitride film and a support substrate formed from a material different in chemical composition from the group III nitride film. The group III nitride film is joined to the support substrate in one of a direct manner and an indirect manner. The group III nitride film has a thickness of 10 ?m or more. A sheet resistance of a group III-nitride-film-side main surface is 200 ?/sq or less.Type: GrantFiled: January 24, 2018Date of Patent: March 24, 2020Assignee: SUMITOMO ELECTRIC INDUSTRIES, LTD.Inventors: Keiji Ishibashi, Akihiro Hachigo, Yuki Hiromura, Naoki Matsumoto, Seiji Nakahata, Fumitake Nakanishi, Takuya Yanagisawa, Koji Uematsu, Yuki Seki, Yoshiyuki Yamamoto, Yusuke Yoshizumi, Hidenori Mikami
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Publication number: 20200066850Abstract: An indium phosphide crystal substrate has a diameter of 100-205 mm and a thickness of 300-800 ?m and includes any of a flat portion and a notch portion. In any of a first flat region and a first notch region, when an atomic concentration of sulfur is from 2.0×1018 to 8.0×1018 cm?3, the indium phosphide crystal substrate has an average dislocation density of 10-500 cm?2, and when an atomic concentration of tin is from 1.0×1015 to 4.0×1018 cm?3 or an atomic concentration of iron is from 5.0×1015 to 1.0×1017 cm?3, the indium phosphide crystal substrate has an average dislocation density of 500-5000 cm?2.Type: ApplicationFiled: February 23, 2018Publication date: February 27, 2020Applicant: Sumitomo Electric Industries, Ltd.Inventors: Muneyuki NISHIOKA, Kazuaki KONOIKE, Takuya YANAGISAWA, Yasuaki HIGUCHI, Yoshiaki HAGI
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Publication number: 20200017992Abstract: An indium phosphide single-crystal body has an oxygen concentration of less than 1×1016 atoms·cm?3, and includes a straight body portion having a cylindrical shape, wherein a diameter of the straight body portion is more than or equal to 100 mm and less than or equal to 150 mm or is more than 100 mm and less than or equal to 150 mm. An indium phosphide single-crystal substrate has an oxygen concentration of less than 1×1016 atoms·cm?13, wherein a diameter of the indium phosphide single-crystal substrate is more than or equal to 100 mm and less than or equal to 150 mm or is more than 100 mm and less than or equal to 150 mm.Type: ApplicationFiled: July 3, 2018Publication date: January 16, 2020Applicant: Sumitomo Electric Industries, Ltd.Inventors: Takuya YANAGISAWA, Kazuaki KONOIKE, Katsushi HASHIO
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Publication number: 20190371620Abstract: A semi-insulating compound semiconductor substrate includes a semi-insulating compound semiconductor, the semi-insulating compound semiconductor substrate being configured such that, on a major plane having a plane orientation of (100), a standard deviation/average value of specific resistance measured at intervals of 0.1 mm along equivalent four directions in a <110> direction from a center of the major plane, and a standard deviation/average value of specific resistance measured at intervals of 0.1 mm along equivalent four directions in a <100> direction from the center of the major plane are each not more than 0.1.Type: ApplicationFiled: September 21, 2017Publication date: December 5, 2019Applicant: Sumitomo Electric Industries, Ltd.Inventors: Katsushi HASHIO, Kazuaki KONOIKE, Takuya YANAGISAWA
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Publication number: 20180166325Abstract: Provided are a group III nitride composite substrate having a low sheet resistance and produced with a high yield, and a method for manufacturing the same, as well as a method for manufacturing a group III nitride semiconductor device using the group III nitride composite substrate. A group III nitride composite substrate includes a group III nitride film and a support substrate formed from a material different in chemical composition from the group III nitride film. The group III nitride film is joined to the support substrate in one of a direct manner and an indirect manner. The group III nitride film has a thickness of 10 ?m or more. A sheet resistance of a group III-nitride-film-side main surface is 200 ?/sq or less.Type: ApplicationFiled: January 24, 2018Publication date: June 14, 2018Applicant: SUMITOMO ELECTRIC INDUSTRIES, LTD.Inventors: Keiji ISHIBASHI, Akihiro HACHIGO, Yuki HIROMURA, Naoki MATSUMOTO, Seiji NAKAHATA, Fumitake NAKANISHI, Takuya YANAGISAWA, Koji UEMATSU, Yuki SEKI, Yoshiyuki YAMAMOTO, Yusuke YOSHIZUMI, Hidenori MIKAMI
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Patent number: 9923063Abstract: A group III nitride composite substrate with a diameter of 75 mm or more includes a support substrate and a group III nitride film with a thickness of 50 nm or more and less than 10 ?m that are bonded to each other. A ratio st/mt of a standard deviation st of the thickness of the group III nitride film to a mean value mt of the thickness thereof is 0.01 or more and 0.5 or less, and a ratio so/mo of a standard deviation so of an absolute value of an off angle between a main surface of the group III nitride film and a plane of a predetermined plane orientation to a mean value mo of the absolute value of the off angle is 0.005 or more and 0.6 or less.Type: GrantFiled: November 12, 2013Date of Patent: March 20, 2018Assignee: SUMITOMO ELECTRIC INDUSTRIES, LTD.Inventors: Keiji Ishibashi, Takuya Yanagisawa, Koji Uematsu, Yuki Seki, Yoshiyuki Yamamoto
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Patent number: 9917004Abstract: Provided are a group III nitride composite substrate having a low sheet resistance and produced with a high yield, and a method for manufacturing the same, as well as a method for manufacturing a group III nitride semiconductor device using the group III nitride composite substrate. A group III nitride composite substrate includes a group III nitride film and a support substrate formed from a material different in chemical composition from the group III nitride film. The group III nitride film is joined to the support substrate in one of a direct manner and an indirect manner. The group III nitride film has a thickness of 10 ?m or more. A sheet resistance of a group III-nitride-film-side main surface is 200 ?/sq or less.Type: GrantFiled: September 4, 2013Date of Patent: March 13, 2018Assignee: SUMITOMO ELECTRIC INDUSTRIES, LTD.Inventors: Keiji Ishibashi, Akihiro Hachigo, Yuki Hiromura, Naoki Matsumoto, Seiji Nakahata, Fumitake Nakanishi, Takuya Yanagisawa, Koji Uematsu, Yuki Seki, Yoshiyuki Yamamoto, Yusuke Yoshizumi, Hidenori Mikami