Abstract: Uniform oxynitride and nitride films can be formed by low-temperature and high-speed nitriding reaction not dependent on the nitriding time or nitriding temperature. A solid dielectric is provided on at least one of opposed surfaces of a pair of electrodes opposed to each other under a pressure of 300 (Torr) or higher, a nitrogen gas containing an oxide equal to or lower than 0.2% is introduced into a space between the pair of opposed electrodes, an electric field is applied to the nitrogen gas, and the resulting N2 (2nd p.s.) or N2 (H.I.R) active species is brought into contact with an object to be processed to form an oxynitride film/nitride film on a surface of the object to be processed.

Abstract: Uniform oxynitride and nitride films can be formed by low-temperature and high-speed nitriding reaction not dependent on the nitriding time or nitriding temperature. A solid dielectric is provided on at least one of opposed surfaces of a pair of electrodes opposed to each other under a pressure of 300 (Torr) or higher, a nitrogen gas containing an oxide equal to or lower than 0.2% is introduced into a space between the pair of opposed electrodes, an electric field is applied to the nitrogen gas, and the resulting N2 (2nd p.s.) or N2 (H.I.R) active species is brought into contact with an object to be processed to form an oxynitride film/nitride film on a surface of the object to be processed.

Abstract: Uniform oxynitride and nitride films can be formed by low-temperature and high-speed nitriding reaction not dependent on the nitriding time or nitriding temperature. A solid dielectric is provided on at least one of opposed surfaces of a pair of electrodes opposed to each other under a pressure of 300 (Torr) or higher, a nitrogen gas containing an oxide equal to or lower than 0.2% is introduced into a space between the pair of opposed electrodes, an electric field is applied to the nitrogen gas, and the resulting N2 (2nd p.s.) or N2 (H.I.R) active species is brought into contact with an object to be processed to form an oxynitride film/nitride film on a surface of the object to be processed.

Abstract: The present invention provides a method and an equipment for plasma treatment under the atmospheric pressure for treating an article to be treated comprising: providing a solid dielectric on at least one opposing face of a pair of opposing electrodes under a pressure near the atmospheric pressure; introducing a treatment gas between said a pair of opposing electrodes; generating plasma by applying an electric field between said electrodes; and contacting said plasma with said article to be treated, wherein an used gas is exhausted from the vicinity of treatment section where said plasma and said article to be treated are in contact, and said vicinity of treatment section is maintained under a specified gas atmosphere by a gas atmosphere control mechanism.

Abstract: In a glow-discharge plasma treatment, a substrate is disposed between two opposing electrodes, at least one electrode being covered by a solid dielectric at an opposing surface. An electric field is imposed between the electrodes in an atmospheric pressure. The electric field is pulse modulated such that an onset time, prefeably an offset time as well, of a pulse is less than 100 .mu.s, and field intensity is 1 to 100 kV/cm. Thus, a stable and evenly dispersed discharge-plasma is obtained, which can treat an outer to surface of the substrate.