Abstract: A method for manufacturing a semiconductor device wherein both the threshold voltages of an N-type MISFET and a P-type MISFET are low, device can be easily manufactured at a lower cost and a higher product yield, and the reliability of the gate insulation film is higher. The gate insulation film is formed on the surface of a silicon substrate 1 in N-type MISFET forming region and the P-type MISFET forming region, and metal gates 4 and 5 are provided thereon. The metal gate 4 is made from a TiCoN film, and the work function thereof is set at 4.0 to 4.8 eV suited to the gate electrode material of the N-type MISFET. The metal gate 5 is formed from a portion of the TiCoN film by ion-implantation of oxygen into the TiCoN film configuring the gate electrode 4 at a dosage of 1013 to 1014 (ions/cm2) to raise the work function by around 0.2 to 0.8 eV.

Abstract: A method for manufacturing a semiconductor device wherein both the threshold voltages of an N-type MISFET and a P-type MISFET are low, device can be easily manufactured at a lower cost and a higher product yield, and the reliability of the gate insulation film is higher. The gate insulation film is formed on the surface of a silicon substrate 1 in N-type MISFET forming region and the P-type MISFET forming region, and metal gates 4 and 5 are provided thereon. The metal gate 4 is made from a TiCoN film, and the work function thereof is set at 4.0 to 4.8 eV suited to the gate electrode material of the N-type MISFET. The metal gate 5 is formed from a portion of the TiCoN film by ion-implantation of oxygen into the TiCoN film configuring the gate electrode 4 at a dosage of 1013 to 1014 (ions/cm2) to raise the work function by around 0.2 to 0.8 eV.

Abstract: An X-ray mask including (a) an X-ray permeable membrane and (b) an X-ray absorber formed in a pattern on the X-ray permeable membrane. The X-ray absorber is composed of an alloy having one of the following groups: (a) tantalum (Ta), ruthenium (Ru), and germanium (Ge); (b) tantalum (Ta), ruthenium (Ru), and silicon (Si); (c) rhenium (Re) and germanium (Ge); and (d) tungsten (W) and germanium (Ge). The X-ray mask provides advantageous features, such as having high ability for absorbing X-ray therein, possible reproduction of a thin film having low stress and having a densified crystal structure.

Abstract: An X-ray mask including (a) an X-ray permeable membrane and (b) an X-ray absorber formed in a pattern on the X-ray permeable membrane. The X-ray absorber is composed of an alloy having one of the following groups: (a) tantalum (Ta), ruthenium (Ru), and germanium (Ge); (b) tantalum (Ta), ruthenium (Ru), and silicon (Si); (c) rhenium (Re) and germanium (Ge); and (d) tungsten (W) and germanium (Ge). The X-ray mask provides advantageous features, such as having high ability for absorbing X-ray therein, possible reproduction of a thin film having low stress and having a densified crystal structure.

Abstract: On a support frame of Si, an X-ray transmissive layer of SiC or so forth is formed. On the X-ray transmissive film, a predetermined pattern of X-ray absorber of an oxide, such as TaO or so forth is formed.

Abstract: In an X-ray mask for X-ray lithography, a Ta--Ge alloy is employed as the X-ray absorber to form a mask pattern on a membrane, which transmits X-rays, such as a SiC membrane. Ta--Ge is sufficiently high in absorption coefficient. The mask pattern is formed by depositing a Ta--Ge film on the membrane by sputtering and patterning the deposited film. Since the sputter-deposited Ta--Ge film is amorphous, sidewalls of the mask pattern become smooth even when the pattern is finer than 0.1 .mu.m. The Ta--Ge film is high in chemical stability, and this film is relatively small in the dependence of internal stress on the pressure of the sputtering gas so that the stress can easily be controlled.

Abstract: In a fabrication method of a field-emission cold cathode, a conductive material for an emitter is first deposited on a Si substrate and then dry etched to form a conical emitter. An insulating layer and a gate electrode are deposited in such a manner as to cover over the emitters, and the surfaces of the emitters are flattened with a resist. Then, the insulating layer and the gate electrode are opened by etching back to expose the end of the conical emitter. Ta can be used as the conductive material to be deposited on the Si substrate. Meanwhile, the insulating layer to be deposited on the emitter can be formed by anodic oxidation. Further, where the height of the surface of the gate electrode from the surface of the Si substrate is set equal to the height of the emitter, detection of the end point at the later etching back step is facilitated.