Abstract: A deposit removing device disclosed herein removes a deposit that adheres to an exhaust pipe through which gas is exhausted from a chamber that manufactures a semiconductor crystal. The deposit removing device includes: a valve that opens and closes an exhaust outlet that communicates with the exhaust pipe; a sealing cover and a fixed table configured to store the valve, into which an inert gas is introduceable, and configured to isolate the exhaust outlet from the outside; and an exhaust outlet opening/closing portion that includes a cylinder for driving the valve and a cylinder for driving the sealing cover or the fixed table. The cylinder drives the valve to open and close the exhaust outlet, and the cylinder drives the sealing cover or the fixed table to introduce the atmosphere into the sealing cover.

Abstract: A cleaning method includes a first removal step of causing an inert gas to which a pulsation is applied to flow into an exhaust pipe after a silicon single crystal doped with an n-type dopant is produced, to peel and remove a deposit; and a second removal step of causing an atmospheric air to which no pulsation is applied to flow into the exhaust pipe through a chamber to burn a part of the deposit with the atmospheric air, the part being not removable in the first removal step, and peel and remove a burned substance of the deposit.

Abstract: A deposit removing device disclosed herein removes a deposit that adheres to an exhaust pipe through which gas is exhausted from a chamber that manufactures a semiconductor crystal. The deposit removing device includes: a valve that opens and closes an exhaust outlet that communicates with the exhaust pipe; a sealing cover and a fixed table configured to store the valve, into which an inert gas is introduceable, and configured to isolate the exhaust outlet from the outside; and an exhaust outlet opening/closing portion that includes a cylinder for driving the valve and a cylinder for driving the sealing cover or the fixed table. The cylinder drives the valve to open and close the exhaust outlet, and the cylinder drives the sealing cover or the fixed table to introduce the atmosphere into the sealing cover.

Abstract: A cleaning method includes a first removal step of causing an inert gas to which a pulsation is applied to flow into an exhaust pipe after a silicon single crystal doped with an n-type dopant is produced, to peel and remove a deposit; and a second removal step of causing an atmospheric air to which no pulsation is applied to flow into the exhaust pipe through a chamber to burn a part of the deposit with the atmospheric air, the part being not removable in the first removal step, and peel and remove a burned substance of the deposit.

Abstract: The present invention is provided with a support on a gripping member, the support being composed of linear springs which elastically support an engaging portion. Thus, the support can be reused, and generation of rupture and dislocation of a single crystal ingot from a gripping part of the engaging portion can be prevented.

Abstract: A single crystal pulling apparatus comprises: a chamber; a crucible disposed within the chamber for containing a melt; a water-cooling means disposed within the chamber in such a manner as surrounding a single crystal pulled up from the melt in the crucible; water piping for feeding cooling water to and discharging the same from the water-cooling means; and supporting arms connected to the chamber for supporting the water-cooling means, wherein the supporting arms are disposed between the single crystal and the water piping. According to this configuration, the supporting arms can prevent the water piping from being damaged in the event of fall and collapse of the single crystal due to failure of the seed neck portion or in the event of rupture of the single crystal due to thermal stress, for instance.

Abstract: The present invention is provided with a support on a gripping member, the support being composed of linear springs which elastically support an engaging portion. Thus, the support can be reused, and generation of rupture and dislocation of a single crystal ingot from a gripping part of the engaging portion can be prevented.

Abstract: A single-crystal growth apparatus includes: a raw-material accumulation tube housed in a pull chamber; a bottom lid attached to a lower end opening of the raw-material accumulation tube; a shaft connected to the bottom lid to lift/lower the accumulation tube and bottom lid; a forward/backward movable raw-material guide tube having a leading end to be inserted through a side wall of the pull chamber into the raw-material accumulation tube; and a raw-material supply apparatus for supplying solid raw materials through the raw-material guide tube into the raw-material accumulation tube, in which the solid raw materials are supplied from the raw-material supply apparatus, through the raw-material guide tube, to the raw-material accumulation tube with the leading end of the raw-material guide tube being inserted into the raw-material accumulation tube, so as to accumulate the solid raw materials, and the bottom lid is lowered to drop the solid raw materials into a crucible.

Abstract: A single crystal pulling apparatus comprises: a chamber; a crucible disposed within the chamber for containing a melt; a water-cooling means disposed within the chamber in such a manner as surrounding a single crystal pulled up from the melt in the crucible; water piping for feeding cooling water to and discharging the same from the water-cooling means; and supporting arms connected to the chamber for supporting the water-cooling means, wherein the supporting arms are disposed between the single crystal and the water piping. According to this configuration, the supporting arms can prevent the water piping from being damaged in the event of fall and collapse of the single crystal due to failure of the seed neck portion or in the event of rupture of the single crystal due to thermal stress, for instance.