Abstract: Examples of the present invention include a metamaterial comprising a plurality of resonators disposed on a substrate, the substrate comprising a dielectric support layer and a relatively thin semiconductor layer, having a Schottky junction between at least one conducting resonator and the semiconductor layer. The properties of the resonator may be adjusted by modifying the physical extent of a depletion region associated with the Schottky junction.

Abstract: Examples of the present invention include a metamaterial comprising a plurality of resonators disposed on a substrate, the substrate comprising a dielectric support layer and a relatively thin semiconductor layer, having a Schottky junction between at least one conducting resonator and the semiconductor layer. The properties of the resonator may be adjusted by modifying the physical extent of a depletion region associated with the Schottky junction.

Abstract: An example method of fabricating a metamaterial comprises providing a first metamaterial layer, the first metamaterial layer including a first plurality of conducting patterns, such as electrically coupled resonators. A second metamaterial layer is then formed, including a second plurality of conducting patterns, to form a multilayer metamaterial. Positional alignment of the first and second plurality of conducting patterns can be achieved relative to the same fiducial mark, which may be associated with the first metamaterial layer, for example supported by a first substrate or on an alignment layer that is attached to the first substrate.