Abstract: A radiation detection apparatus comprises a rectangular sensor panel having a pixel array including a plurality of photoelectric conversion elements, and a scintillator layer on which a plurality of columnar crystals configured to convert radiation into light are arranged. The scintillator layer has one side along an outer shape of the sensor panel and an opposite side of the one side and a region between the one side and the opposite side in which directions in which columnar crystals extend and a normal line of a main surface of the sensor panel form angles. The angles have a concentric angle distribution decreasing in angle from a central portion of the one side toward the opposite side, and thicknesses of the plurality of columnar crystals have a concentric thickness distribution increasing in thickness from the central portion of the one side to the opposite side.

Abstract: A radiation detection apparatus includes a first sensor panel that generates a signal in accordance with incident radiation, a second sensor panel that generates a signal in accordance with incident radiation, and an adhesive member that couples together the first sensor panel and the second sensor panel. When a stimulation is applied to the adhesive member, an adhesive force of the adhesive member is lowered to a strength at which the first sensor panel and the second sensor panel can be separated without causing damage.

Abstract: A radiation imaging apparatus in which a sensor substrate and a scintillator are bonded by a bonding member, is provided. The scintillator includes a first surface opposing the sensor substrate via the bonding member and covered by a first protective layer, a second surface disposed on an opposite side of the first surface and covered by a second protective layer, and a third surface connecting the first surface and the second surface and covered by a third protective layer. The first protective layer, the second protective layer, and the third protective layer are each configured by one or more layers, and a number of layers of the first protective layer is less than or equal to respective numbers of layers of the second protective layer and the third protective layer.

Abstract: A manufacturing method of a radiation imaging apparatus in which a sensor substrate and a scintillator are bonded by a bonding member, is provided. The method includes: forming, on a support substrate, a functional layer including a moisture preventing layer configured to suppress permeation of water; forming the scintillator on the support substrate with the functional layer arranged thereon; and separating, from the support substrate, at least a part of the scintillator together with the functional layer.

Abstract: A scintillator panel is provided. The scintillator panel comprises: a support; a scintillator configured to generate light in accordance with incident radiation; a light reflecting layer arranged between the support and the scintillator and configured to reflect the light; a semi-transmissive layer arranged between the light reflecting layer and the scintillator and configured to reflect part of the light and transmit other part of the light; and an optical adjustment layer arranged between the light reflecting layer and the semi-transmissive layer and configured to make an optical distance between the light reflecting layer and the semi-transmissive layer become a length with which the light resonates.

Abstract: A scintillator panel is provided. The scintillator panel comprises: a support; a scintillator configured to generate light in accordance with incident radiation; a light reflecting layer arranged between the support and the scintillator and configured to reflect the light; a semi-transmissive layer arranged between the light reflecting layer and the scintillator and configured to reflect part of the light and transmit other part of the light; and an optical adjustment layer arranged between the light reflecting layer and the semi-transmissive layer and configured to make an optical distance between the light reflecting layer and the semi-transmissive layer become a length with which the light resonates.

Abstract: A method of manufacturing a scintillator, includes growing a scintillator layer constituted by a plurality of column crystals on a base, forming a first protection film so as to cover the scintillator layer, planarizing the first protection film, the planarizing including a polishing process of polishing the first protection film, and forming a second protection film configured to cover the first protection film that has undergone the planarizing. The scintillator layers grown on the base include an abnormally grown portion. In the polishing process, a front end of the abnormally grown portion is polished as well as a surface of the first protection film so as to form a continuation surface by the surface of the first protection film and a surface of the abnormally grown portion.

Abstract: A method of manufacturing a scintillator, includes growing a scintillator layer constituted by a plurality of column crystals on a base, forming a first protection film so as to cover the scintillator layer, planarizing the first protection film, the planarizing including a polishing process of polishing the first protection film, and forming a second protection film configured to cover the first protection film that has undergone the planarizing. The scintillator layers grown on the base include an abnormally grown portion. In the polishing process, a front end of the abnormally grown portion is polished as well as a surface of the first protection film so as to form a continuation surface by the surface of the first protection film and a surface of the abnormally grown portion.

Abstract: Provided is a scintillator plate including a crystalline body formed of a compound having a crystal structure of a Cs3Cu2I5 crystal and a substrate, in which an orientation of the crystalline body is an a-axis group orientation with respect to a direction perpendicular to the substrate.

Abstract: Improvement in luminescence intensity is demanded from a scintillator material. The present invention provides a new scintillator material by adding a specific element selected from thallium and indium to a material having a basic composition represented by an alkali element:copper:a halogen element=3:2:5.

Abstract: Provided is a scintillator plate including a crystalline body formed of a compound having a crystal structure of a Cs3Cu2I5 crystal and a substrate, in which an orientation of the crystalline body is an a-axis group orientation with respect to a direction perpendicular to the substrate.

Abstract: Improvement in luminescence intensity is demanded from a scintillator material. The present invention provides a new scintillator material by adding a specific element selected from thallium and indium to a material having a basic composition represented by an alkali element:copper:a halogen element=3:2:5.

Abstract: A radiation detector including a scintillator structure comprising a first plane and a second plane which are not positioned on the same plane, the scintillator structure having an optical waveguiding property in a direction between the first plane and the second plane; and a two-dimensional light receiving element formed of multiple pixels which are disposed parallel to either one of the first plane and the second plane. The radiation detector includes at least one smoothness-deteriorate region which is positioned in one of the first plane and the second plane of the scintillator structure and has an area of 1/6 or more of a light receiving area of each of the multiple pixels. The region is repaired by an optically transparent material so as to be smoothed.

Abstract: A radiation detector including a scintillator structure comprising a first plane and a second plane which are not positioned on the same plane, the scintillator structure having an optical waveguiding property in a direction between the first plane and the second plane; and a two-dimensional light receiving element formed of multiple pixels which are disposed parallel to either one of the first plane and the second plane. The radiation detector includes at least one smoothness-deteriorate region which is positioned in one of the first plane and the second plane of the scintillator structure and has an area of 1/6 or more of a light receiving area of each of the multiple pixels. The region is repaired by an optically transparent material so as to be smoothed.

Abstract: A method for producing an electron-emitting device includes forming a first conductive film on a side surface of an insulation layer including the side surface and a top surface connected to the side surface; forming a second conductive film from the top surface to the side surface and on the first conductive film; and etching the second electrically conductive film.

Abstract: By applying a drive voltage Vf [V] between first and second conductive films, when electrons are emitted by the first conductive film, an equipotential line of 0.5 Vf [V] is inclined toward the first conductive film, rather than toward the second conductive film, in the vicinity of the electron emitting portion of the first conductive film, in a cross section extending across the electron emitting portion and the portion of the second conductive film located nearest the electron emitting portion. The present invention improves electron emission efficiency.

Abstract: An electron-emitting device manufacturing method includes a first step of forming a conductive film on an insulating layer having an upper surface and a side surface connected to the upper surface via a corner portion so as to extend from the side surface to the upper surface and cover at least a part of the corner portion, and a second step of etching the conductive film in a film thickness direction. At the first step, the conductive film is formed so that film density of the conductive film on the side surface of the insulating layer becomes the same as or higher than film density of the conductive film on the upper portion of the insulating film.

Abstract: An electron-emitting device has an insulating layer having a side surface, a recess portion formed on the side surface of the insulating layer, a gate electrode which is arranged above the recess portion, and a wedge-shaped emitter which is arranged on an edge of a lower side of the recess portion and has a first slope on a side of the recess portion and a second slope on a side opposite to the recess portion. A lower end of the first slope of the emitter enters the recess portion, and both the first slope and the second slope of the emitter tilt to an outside of the recess portion.

Abstract: An electron-emitting device has an insulating layer having a side surface, a recess portion formed on the side surface of the insulating layer, a gate electrode which is arranged above the recess portion, and a wedge-shaped emitter which is arranged on an edge of a lower side of the recess portion and has a first slope on a side of the recess portion and a second slope on a side opposite to the recess portion. A lower end of the first slope of the emitter enters the recess portion, and both the first slope and the second slope of the emitter tilt to an outside of the recess portion.

Abstract: A lanthanum boride film is deposited on a substrate by means of a sputtering method while moving the substrate and a target of lanthanum boride relative to each other in a state where the substrate and the target are arranged in opposition to each other. When a mean free path of sputtering gas molecules at the time of deposition is ? (mm) and a distance between the substrate and the target is L (mm), a ratio of L/? is set to a value equal to or larger than 20. A value which is obtained by dividing a discharge power value by an area of the target is set to be in a range of from 1 W/cm2 or more to 5 W/cm2 or less.