Patents by Inventor Tan T. Sheng

Tan T. Sheng has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Solid state device with conductors having chain-shaped grain structure
    Patent number: 4438450
    Abstract: Aluminum electrically conducting patterns for integrated circuits are achieved with narrow lines and unexpectedly-high electromigration characteristics by making the crystal grains of the pattern into a chain-shaped structure with {111} orientation. A process for achieving the structure is also described.
    Type: Grant
    Filed: December 7, 1981
    Date of Patent: March 20, 1984
    Assignee: Bell Telephone Laboratories, Incorporated
    Inventors: Tan T. Sheng, Ashok K. Sinha, Sheila Vaidya
  • Gold-tin-gold ohmic contact to N-type group III-V semiconductors
    Patent number: 4179534
    Abstract: A semiconductor device with a low resistance ohmic contact, strongly adherent to the n-type surface of a body (11) of Group III-V compound semiconductor is obtained by a process including the sequential deposition of gold (13), tin (14) and gold (15) at a surface temperature of less than 200 degrees C followed by a heat treatment in a nonoxidizing atmosphere. This process has shown particular advantage when applied to aluminum containing compound semiconductors (e.g., gallium aluminum arsenide). For such use an initial deposition of aluminum (16) has proven particularly successful in producing consistently low resistance ohmic contacts. The invention has been used in the production of light emitting diodes.
    Type: Grant
    Filed: May 24, 1978
    Date of Patent: December 18, 1979
    Assignee: Bell Telephone Laboratories, Incorporated
    Inventors: Chuan C. Chang, Felix Ermanis, Robert J. McCoy, Shohei Nakahara, Tan T. Sheng
  • Fabrication of gallium arsenide MOS devices
    Patent number: 4144634
    Abstract: A method of fabricating gallium arsenide MOS devices with improved stoichiometric and electrical properties is disclosed. The device includes a gallium arsenide substrate overlaid with a native oxide and an aluminum oxide layer. The device is fabricated using a plasma oxidizing process.
    Type: Grant
    Filed: June 28, 1977
    Date of Patent: March 20, 1979
    Assignee: Bell Telephone Laboratories, Incorporated
    Inventors: Chuan C. Chang, Robert P. H. Chang, James J. Coleman, Tan T. Sheng