Patents by Inventor Tangshiun Yeh
Tangshiun Yeh has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 10340885Abstract: A bulk acoustic wave (BAW) resonator having a first electrode, a second electrode, and a piezoelectric layer between the first electrode and the second electrode. The first electrode is of a first electrode material. The second electrode is of a second electrode material. The piezoelectric layer is of a piezoelectric material doped with at least one rare earth element. The BAW resonator has a resonant frequency dependent at least in part on respective thicknesses and materials of the first electrode, the second electrode and the piezoelectric layer. The resonant frequency has a temperature coefficient. At least one of the first electrode and the second electrode includes a niobium alloy electrode material that, relative to molybdenum as the electrode material, reduces the temperature coefficient of the resonant frequency of the BAW resonator.Type: GrantFiled: May 8, 2014Date of Patent: July 2, 2019Assignee: Avago Technologies International Sales Pte. LimitedInventors: Kevin J. Grannen, Phil Nikkel, Tangshiun Yeh, Chris Feng, Tina L. Lamers, John Choy
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Publication number: 20180115302Abstract: BAW resonators comprise a first electrode; a second electrode; and a piezoelectric layer disposed between the first and second electrodes. The piezoelectric layer comprises a piezoelectric material doped to a minimum atomic percentage with at least one rare earth element. In a representative embodiment, the BAW resonators comprise a first buffer layer disposed over the first electrode; and a second buffer layer disposed over the first piezoelectric layer. In a representative embodiment, the first buffer layer, or the second buffer layer, or both, are doped with the at least one rare earth element to an atomic percentage that is less than the minimum percentage.Type: ApplicationFiled: October 26, 2016Publication date: April 26, 2018Inventors: Tangshiun Yeh, Ryan Pooran, David Martin
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Patent number: 9590165Abstract: An acoustic resonator structure comprises a first electrode disposed on a substrate, a piezoelectric layer disposed on the first electrode and comprising aluminum scandium nitride, a second electrode disposed on the piezoelectric layer, and a temperature compensation feature having a temperature coefficient offsetting at least a portion of a temperature coefficient of the piezoelectric layer, the first electrode, and the second electrode.Type: GrantFiled: February 28, 2014Date of Patent: March 7, 2017Assignee: Avago Technologies General IP (Singapore) Pte. Ltd.Inventors: Qiang Zou, Chris Feng, Phil Nikkel, Kevin J. Grannen, Tangshiun Yeh, Dariusz Burak, John Choy, Tina L. Lamers
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Patent number: 9455681Abstract: In accordance with a representative embodiment, a bulk acoustic wave (BAW) resonator comprises: a first electrode having a first electrode thickness; a second electrode having a second electrode thickness; and a piezoelectric layer having a piezoelectric layer thickness and being disposed between the first and second electrodes, the piezoelectric layer comprising a piezoelectric material doped with at least one rare earth element. For a particular acoustic coupling coefficient (kt2) value and a series resonance frequency (Fs) of the BAW resonator, the first electrode thickness and the second electrode thickness are each greater than a thickness of a first electrode and a thickness of a second electrode of a BAW resonator comprising an undoped piezoelectric layer.Type: GrantFiled: February 27, 2014Date of Patent: September 27, 2016Assignee: Avago Technologies General IP (Singapore) Pte. Ltd.Inventors: Chris Feng, Phil Nikkel, John Choy, Kevin J. Grannen, Tangshiun Yeh
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Publication number: 20150326200Abstract: A bulk acoustic wave (BAW) resonator having a first electrode, a second electrode, and a piezoelectric layer between the first electrode and the second electrode. The first electrode is of a first electrode material. The second electrode is of a second electrode material. The piezoelectric layer is of a piezoelectric material doped with at least one rare earth element. The BAW resonator has a resonant frequency dependent at least in part on respective thicknesses and materials of the first electrode, the second electrode and the piezoelectric layer. The resonant frequency has a temperature coefficient. At least one of the first electrode and the second electrode includes a niobium alloy electrode material that, relative to molybdenum as the electrode material, reduces the temperature coefficient of the resonant frequency of the BAW resonator.Type: ApplicationFiled: May 8, 2014Publication date: November 12, 2015Applicant: Avago Technologies General IP (Singapore) Pte. Ltd.Inventors: Kevin J. Grannen, Phil Nikkel, Tangshiun Yeh, Chris Feng, Tina L. Lamers, John Choy
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Publication number: 20150311046Abstract: A plasma vapor deposition (PVD) system and method for depositing a piezoelectric layer over a substrate are disclosed. A plasma is created in a reaction chamber creates from the sputtering gas supplied to the reaction chamber. The plasma sputters atoms from the sputtering target, which are deposited on the substrate for forming the thin film of the material.Type: ApplicationFiled: April 27, 2014Publication date: October 29, 2015Applicant: Avago Technologies General IP (Singapore) Pte. Ltd.Inventors: Tangshiun Yeh, Phil Nikkel, Kevin J. Grannen, Chris Feng, John Choy
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Publication number: 20150240349Abstract: A method is provided for depositing a thin film of material on a substrate. The method includes providing the substrate on a cathode and a target on an anode in a reaction chamber of a magnetron sputtering device, generating a magnetic field using an enhanced magnetron including an upper base plate to generate an upper magnetic field having a field strength of about 205 gauss and a lower base plate to generate a lower magnetic field having a field strength of about ?215 gauss to about ?370 gauss, injecting sputtering gas at low pressure into the reaction chamber, and applying power across the anode and cathode to create plasma. Ions from the plasma sputter atoms of at least one element from the target, which are deposited on the substrate to form the thin film. Power density of the power is in a range of about 20 W/cm2 to about 60 W/cm2.Type: ApplicationFiled: February 27, 2014Publication date: August 27, 2015Applicant: Avago Technologies General IP (Singapore) Pte. Ltd.Inventors: Kevin J. Grannen, Chris Feng, Ivan Ionash, Phil Nikkel, Tangshiun Yeh, John Choy
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Publication number: 20150244347Abstract: In accordance with a representative embodiment, a bulk acoustic wave (BAW) resonator comprises: a first electrode having a first electrode thickness; a second electrode having a second electrode thickness; and a piezoelectric layer having a piezoelectric layer thickness and being disposed between the first and second electrodes, the piezoelectric layer comprising a piezoelectric material doped with at least one rare earth element. For a particular acoustic coupling coefficient (kt2) value and a series resonance frequency (Fs) of the BAW resonator, the first electrode thickness and the second electrode thickness are each greater than a thickness of a first electrode and a thickness of a second electrode of a BAW resonator comprising an undoped piezoelectric layer.Type: ApplicationFiled: February 27, 2014Publication date: August 27, 2015Applicant: Avago Technologies General IP (Singapore) Pte. LtdInventors: Chris Feng, Phil Nikkel, John Choy, Kevin J. Grannen, Tangshiun Yeh
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Publication number: 20140175950Abstract: An acoustic resonator structure comprises a first electrode disposed on a substrate, a piezoelectric layer disposed on the first electrode and comprising aluminum scandium nitride, a second electrode disposed on the piezoelectric layer, and a temperature compensation feature having a temperature coefficient offsetting at least a portion of a temperature coefficient of the piezoelectric layer, the first electrode, and the second electrode.Type: ApplicationFiled: February 28, 2014Publication date: June 26, 2014Applicant: Avago Technologies General IP (Singapore) Pte. Ltd.Inventors: Qiang Zou, Chris Feng, Phil Nikkel, Kevin J. Grannen, Tangshiun Yeh, Dariusz Burak, John Choy, Tina L. Lamers
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Publication number: 20140174908Abstract: A sputtering target comprises an alloy of scandium and aluminum, wherein the alloy has a concentration of 3-10 at % scandium and 90-97 at % aluminum. The sputtering target can be used to produce a piezoelectric layer for an apparatus such as an acoustic resonator.Type: ApplicationFiled: February 28, 2014Publication date: June 26, 2014Applicant: Avago Technologies General IP (Singapore) Pte. Ltd.Inventors: Chris Feng, Tangshiun Yeh, John Choy, Kevin J. Grannen, Phil Nikkel
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Publication number: 20100109085Abstract: Memory elements and methods for making memory elements. One method of making a memory element includes forming a first electrode, forming an electrically conductive current densifying element and a memory cell on the first electrode, the memory cell and the current densifying element adjacent to each other. A second electrode is formed over the current densifying element and the memory cell. The memory elements may be resistance random access memory elements.Type: ApplicationFiled: March 20, 2009Publication date: May 6, 2010Applicant: SEAGATE TECHNOLOGY LLCInventors: Jinyoung Kim, Yongchul Ahn, Muralikrishnan Balakrishnan, Tangshiun Yeh, Antoine Khoueir
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Patent number: 5982658Abstract: A magnetoresistive memory array which has a row of active sense lines with each sense line including magnetoresistive bits and word lines extending over the bits. Each active sense line ending in a termination bit having a configuration selected to cause an adjacent bit to experience a magnetic field similar to that experienced by the remaining bits in the sense line. An inactive sense line located at each end of the row of active sense lines.Type: GrantFiled: October 31, 1997Date of Patent: November 9, 1999Assignee: Honeywell Inc.Inventors: Lonny L. Berg, Paul W. Cravens, Allan T. Hurst, Tangshiun Yeh
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Patent number: 5820924Abstract: A method for manufacturing magnetoresistive sensors whereby a first determination of an anisotropy field of the magnetoresistive material is made and an annealing temperature is selected based on a desired final value of the anisotropy field.Type: GrantFiled: June 6, 1997Date of Patent: October 13, 1998Assignee: Honeywell Inc.Inventors: William F. Witcraft, Tangshiun Yeh, Cheisan J. Yue, Michael J. Bohlinger
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Patent number: 5756366Abstract: Magnetoresistive random access memory bit edges are magnetically hardened to prevent bit edge reversal.Type: GrantFiled: December 21, 1995Date of Patent: May 26, 1998Assignee: Honeywell Inc.Inventors: Lonny L. Berg, Allan T. Hurst, Jr., Tangshiun Yeh, Paul W. Cravens
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Patent number: 5569617Abstract: In a magnetoresistive random access memory device, a spacer material is deposited at the edges of a memory bit to maintain magnetization at the edges in a direction along the edges.Type: GrantFiled: December 21, 1995Date of Patent: October 29, 1996Assignee: Honeywell Inc.Inventors: Tangshiun Yeh, Allan T. Hurst, Huang-Joung Chen, Lonny L. Berg, William F. Witcraft
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Patent number: 5496759Abstract: A process for forming a magnetoresistive bit and an interconnection to an underlying component forms a pattern in an amorphous dielectric overlying the magnetic materials. Portions of the magnetic materials are removed to form a bit having a smooth bit edge profile by ion milling. The bit has a bit end located over the underlying component. A second amorphous dielectric layer is deposited and etched at the bit end to form a via at the underlying component. Conventional first metal is used to form the interconnection.Type: GrantFiled: December 29, 1994Date of Patent: March 5, 1996Assignee: Honeywell Inc.Inventors: Jerry Yue, Allan T. Hurst, Tangshiun Yeh, Huang-Joung Chen