Abstract: An LED unit includes an LED and a lens receiving the LED. The lens includes a first light-incident face confronting the LED to refract the light emitted from the LED with a small angle into the lens, a second light-incident face surrounding the LED to refract the light emitted from the LED with a large angle into the lens, a light-reflecting face to reflect the light from the second light-incident face towards a top of the LED, a first light-emergent face to refract the light from the first light-incident face out of the lens, and a second light-emergent face to refract the light from the light-reflecting face out of the lens.

Abstract: An LED unit includes an LED and a lens receiving the LED. The lens includes a pedestal, a light-guiding portion connected to the pedestal and a pair of ears extending outwardly from the pedestal. The light-guiding portion includes a light-incident face facing the LED and a light-emergent face away from the LED. The light-incident face has a constant curvature and the light-emergent has a variable curvature larger than that of the light-incident face.

Abstract: An electronic device (100) employs a viewing window (10), which includes a transparent substrate (11), an ink layer (12) and a metal layer (14). The ink layer is made of semitransparent ink or transparent matte ink. The ink layer is formed on the substrate and partially covers the substrate; and the metal layer is formed on the ink layer.

Abstract: The broadband brightfield/darkfield wafer inspection system provided receives broadband brightfield illumination information via a defect detector, which signals for initiation of darkfield illumination. The defect detector forms a two dimensional histogram of the defect data and a dual mode defect decision algorithm and post processor assess defects. Darkfield radiation is provided by two adjustable height laser beams which illuminate the surface of the wafer from approximately 6 to 39 degrees. Each laser is oriented at an azimuth angle 45 degrees from the orientation of the Manhattan geometry on the wafer, and 90 degrees in azimuth from one another. Vertical angular adjustability is provided by modifying cylindrical lens position to compensate for angular mirror change by translating an adjustable mirror, positioning the illumination spot into the sensor field of view, rotating and subsequently moving the cylindrical lens.