Abstract: A system for transfer of a plurality of die from a die source to a receive substrate is provided. The system includes a die source including a plurality of die, the plurality of die being coupled to a carrier. The system also includes a receive substrate to receive the plurality of die from the die source. The receive substrate includes a die catch material for receiving the plurality of die from the die source, the die catch material being reusable. The system also includes a laser source for providing energy to interact with a die release material to transfer the plurality of die from the die source to the receive substrate.

Abstract: A system for transfer of a plurality of die from a die source to a receive substrate is provided. The system includes a die source including a plurality of die, the plurality of die being coupled to a carrier. The system also includes a receive substrate to receive the plurality of die from the die source. The receive substrate includes a die catch material for receiving the plurality of die from the die source, the die catch material being reusable. The system also includes a laser source for providing energy to interact with a die release material to transfer the plurality of die from the die source to the receive substrate.

Abstract: A system for transfer of a plurality of die from a die source to a receive substrate is provided. The system includes a die source including a plurality of die, the plurality of die being coupled to a carrier. The system also includes a receive substrate to receive the plurality of die from the die source. The receive substrate includes a die catch material for receiving the plurality of die from the die source, the die catch material being reusable. The system also includes a laser source for providing energy to interact with a die release material to transfer the plurality of die from the die source to the receive substrate.

Abstract: A semiconductor package may include a first substrate, a second substrate facing the first substrate, a plurality of first electrical connections disposed between the first substrate and the second substrate, and a first material disposed between the first substrate and the second substrate. The plurality of first electrical connections may electrically couple the first substrate and the second substrate to each other. The first material may surround each of the plurality of first electrical connections, and a width of the first material proximal the first substrate may be smaller than a width of the first material proximal the second substrate.

Abstract: A semiconductor package may include a first substrate, a second substrate facing the first substrate, a plurality of first electrical connections disposed between the first substrate and the second substrate, and a first material disposed between the first substrate and the second substrate. The plurality of first electrical connections may electrically couple the first substrate and the second substrate to each other. The first material may surround each of the plurality of first electrical connections, and a width of the first material proximal the first substrate may be smaller than a width of the first material proximal the second substrate.

Abstract: A package-on-package (“PoP”) structure and a method of forming are provided. The PoP structure may be formed by forming a first set of electrical connections on a first substrate. A first material may be applied to the first set of electrical connections. A second substrate may be provided having a second set of electrical connections formed thereon. The first set of electrical connections of the first substrate having the epoxy flux applied may be contacted to the second electrical connections of the second substrate. A reflow process may be performed to electrically connect the first substrate to the second substrate. The epoxy flux applied to the first electrical connections of the first substrate may prohibit electrical bridges or shorts from forming during the reflow process.

Abstract: A package-on-package (“PoP”) structure and a method of forming are provided. The PoP structure may be formed by forming a first set of electrical connections on a first substrate. A first material may be applied to the first set of electrical connections. A second substrate may be provided having a second set of electrical connections formed thereon. The first set of electrical connections of the first substrate having the epoxy flux applied may be contacted to the second electrical connections of the second substrate. A reflow process may be performed to electrically connect the first substrate to the second substrate. The epoxy flux applied to the first electrical connections of the first substrate may prohibit electrical bridges or shorts from forming during the reflow process.