Patents by Inventor Tapas Jain

Tapas Jain has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Computer controlled electromechanical MMW frequency antenna scanning system and beam steering thereof
    Patent number: 11990685
    Abstract: This disclosure relates generally to Millimeter Wave (MMW) frequency antenna scanning system. Conventional approaches available for scanning an antenna beam over a large angular swath with high directivity are unable to address concerns of size and cost involved. The technical problem of providing an MMW frequency antenna scanning system using a single small size antenna capable of scanning as desired at a desired precision is addressed in the present disclosure. The antenna scanning system provided is an electromechanical system that makes the system cost effective. Computer control provides precision control in beam steering from remote. Use of a metasurface and configuration of a radiating patch and a shorting pin in a microstrip antenna addresses the concern with regards to the size of the antenna scanning system.
    Type: Grant
    Filed: May 13, 2022
    Date of Patent: May 21, 2024
    Assignee: Tata Consultancy Services Limited
    Inventors: Tapas Chakravarty, Aman Kumar, Arpan Pal, Achanna Anil Kumar, Roshan Khobragade, Poornima Surojia, Pranay Sahay, Manish Jain
  • Process for preparing ingot having reduced distortion at late body length
    Patent number: 11959189
    Abstract: A method for growing a single crystal silicon ingot by the Czochralski method having reduced deviation in diameter is disclosed.
    Type: Grant
    Filed: April 3, 2020
    Date of Patent: April 16, 2024
    Assignee: GlobalWafers Co., Ltd.
    Inventors: Tapas Jain, Sumeet S. Bhagavat, Zheng Lu, Feng-Chien Tsai, Hong-Huei Huang
  • PROCESS FOR PREPARING INGOT HAVING REDUCED DISTORTION AT LATE BODY LENGTH
    Publication number: 20220220631
    Abstract: A method for growing a single crystal silicon ingot by the Czochralski method having reduced deviation in diameter is disclosed.
    Type: Application
    Filed: April 3, 2020
    Publication date: July 14, 2022
    Inventors: Tapas Jain, Sumeet S. Bhagavat, Zheng Lu, Feng-Chien Tsai, Hong-Huei Huang
  • PROCESS FOR PREPARING INGOT HAVING REDUCED DISTORTION AT LATE BODY LENGTH
    Publication number: 20210269936
    Abstract: A method for growing a single crystal silicon ingot by the Czochralski method having reduced deviation in diameter is disclosed.
    Type: Application
    Filed: April 3, 2020
    Publication date: September 2, 2021
    Inventors: Tapas Jain, Sumeet S. Bhagavat, Zheng Lu, Feng-Chien Tsai, Hong-Huei Huang
  • PROCESS FOR PREPARING INGOT HAVING REDUCED DISTORTION AT LATE BODY LENGTH
    Publication number: 20200325594
    Abstract: A method for growing a single crystal silicon ingot by the Czochralski method having reduced deviation in diameter is disclosed.
    Type: Application
    Filed: April 3, 2020
    Publication date: October 15, 2020
    Inventors: Tapas Jain, Sumeet S. Bhagavat, Zheng Lu, Feng-Chien Tsai, Hong-Huei Huang